My Inquiry
My Account
Winbond Electronics Corporation W632GU8NB12I
- Part No.:
- W632GU8NB12I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GU8NB12I.pdf
- Description:
- IC DRAM 2GBIT 78-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,662
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W632GU8NB12I from Winbond Electronics is a 2 Gb (256 MB) DDR3L SDRAM organized as 32M × 8 banks × 8 bits, operating at 1.35 V nominal supply with industrial temperature support (−40°C to +95°C), compliant with DDR3L-1600 (11-11-11) timing, and packaged in a 78-ball VFBGA (8 mm × 10.5 mm). It delivers high-bandwidth memory for embedded controllers, networking processors, and industrial SoC platforms requiring low-voltage, high-reliability DRAM.
For engineers reviewing the W632GU8NB12I datasheet, W632GU8NB12I pinout, W632GU8NB12I application, or W632GU8NB12I equivalent, key selection considerations include its DDR3L-1600 speed bin, industrial-grade thermal range, programmable CAS Write Latency (CWL = 5–8), on-die termination (ODT) configuration, and ZQ calibration support for signal integrity in dense PCB layouts.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-synchronized DQ/DQS alignment, and source-synchronous double-data-rate I/O referenced to differential CK/CK# and DQS/DQS#. Its command interface supports posted CAS, additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst chop (BC4) or full burst (BL8) modes.
It features asynchronous RESET# for power-up initialization, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQS-to-clock skew compensation, and dynamic ODT (Rtt_WR) with programmable termination values (RTT_NOM = 60 Ω, 120 Ω, 40 Ω; RTT_WR = 60 Ω, 120 Ω). The device supports PASR, ASR, and extended-temperature self-refresh via MR2 configuration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 MB), organized as 32M words × 8 banks × 8 bits - defines usable capacity and bank-level parallelism |
| Data Rate | DDR3L-1600 (1600 MT/s), tCK(AVG) = 1.875–<2.5 ns - sets maximum sustained transfer bandwidth |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical) - enables lower power vs. standard DDR3 while maintaining backward compatibility to 1.5 V |
| CAS Latency (CL) | Programmable CL = 5–11, 13, 14 - determines read access delay in clock cycles; CL=11 required for DDR3L-1600 compliance |
| CAS Write Latency (CWL) | Programmable CWL = 5–8 - sets minimum write command-to-data valid delay; CWL=6 used at DDR3L-1600 |
| Operating Temperature | −40°C ≤ TCASE ≤ +95°C - qualifies for industrial environments without derating |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free) - surface-mount compatible with fine-pitch routing |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C) - mandates doubled refresh rate above 85°C for data retention |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm thickness, ball pitch 0.8 mm), RoHS-compliant, lead-free construction. Ball layout follows JEDEC MO-275AC standard with defined power, ground, address/control, and I/O ball assignments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column/bank address during ACT, READ, WRITE, PRE commands; multiplexed with MRS inputs |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for command targeting |
| CK, CK# | Differential Clock | Edge-triggered command/address latching reference; CK rising / CK# falling defines sampling point |
| CS#, RAS#, CAS#, WE# | Command Signals | Active-low chip select and command decode lines; define ACT, READ, WRITE, PRE, REF, MRS operations |
| DM0–DM7 | Data Masks | Per-byte write masking for DQ0–DQ63; suppresses write data without affecting bus timing |
| DQ0–DQ63 | Data I/O | 8-bit × 8-bank bidirectional data bus; operates at double data rate synchronized to DQS/DQS# |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe pair; center-aligned with write data, edge-aligned with read data |
| RESET# | Asynchronous Reset | Hardware-initiated initialization sequence; required before first operation after power-up |
| VDD, VDDQ | Power Supplies | VDD = core logic voltage; VDDQ = I/O voltage; both operate at 1.35 V nominal with shared regulation |
| VSS | Ground | Signal and power return; multiple balls ensure low-impedance reference for noise-sensitive DDR signaling |
| ZQ | Calibration Reference | Connects to external 240 Ω ±1 % resistor to ground; enables output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Programmable On-Die Termination (ODT) | Configurable RTT_NOM (60/120/40 Ω) and RTT_WR (60/120 Ω) per MR1/MR2 - eliminates external termination resistors and improves signal integrity |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor - compensates for process/voltage/temperature drift in output drivers and ODT |
| Write Leveling | Hardware-assisted DQS-to-CK skew adjustment via MRS entry - enables reliable capture of write data across wide temperature ranges |
| Multi-Purpose Register (MPR) | Predefined pattern readout (0x00000000) for system-level timing margin verification - supports automated calibration without host memory controller firmware changes |
| Partial Array Self-Refresh (PASR) | MR2-controlled refresh of selected banks only - reduces self-refresh current by up to 50 % when full-array refresh is unnecessary |
| Dynamic ODT (Rtt_WR) | ODT enabled only during write bursts - minimizes bus contention and crosstalk on bidirectional DQ lines during read operations |
Applications
| Industrial HMI Controllers | Network Edge Routers |
|---|---|
Use Scenario: Human-machine interface units in factory automation panels requiring real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Primary system memory interfaced to ARM Cortex-A series SoCs, providing 1600 MT/s bandwidth for frame buffer and application code execution. Use Value: DDR3L-1600 speed and −40°C to +95°C rating ensure deterministic response under thermal cycling; low-voltage operation extends fanless enclosure lifetime. |
Use Scenario: Layer 3 packet forwarding engines in compact enterprise switches handling 10/100/1000BASE-T traffic. IC Role / Device Role / Timing Role: Buffer memory for packet classification tables and flow state tracking, accessed concurrently by multiple hardware accelerators. Use Value: Eight-bank architecture enables interleaved accesses across lookup engines; programmable CWL/CL accommodates varying PHY latency paths. |
| Medical Imaging Gateways | Automated Test Equipment (ATE) |
Use Scenario: DICOM image preprocessing modules aggregating ultrasound or MRI streams prior to cloud upload. IC Role / Device Role / Timing Role: High-throughput frame store for FPGA-based image pipelines, supporting burst reads/writes aligned to pixel clock domains. Use Value: Write leveling and MPR calibration ensure robust data capture at 1600 MT/s despite board-level skew; industrial temp grade avoids cooling complexity. |
Use Scenario: Pin electronics cards in semiconductor ATE systems performing high-speed digital pattern generation and capture. IC Role / Device Role / Timing Role: Pattern memory for stimulus/response vectors, operated in burst mode with precise tAA and tRCD control. Use Value: Programmable tRCD (11 ns min) and tRP (11 ns min) enable tight timing closure; dynamic ODT prevents signal degradation during mixed-direction DQ traffic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16256B-125KBL | 16-bit bus width (vs. 8-bit), same DDR3L-1600 speed, 2 Gb density, 96-ball FBGA - requires PCB redesign for wider data path | Targeted at x16 memory channels in server DIMMs and high-end SoMs; not drop-in for x8 designs | Select only if system architecture supports 16-bit interface and higher bandwidth per channel is prioritized over footprint and cost |
| MT41K256M8DA-125:A | Micron part; identical 2 Gb × 8 organization, DDR3L-1600, −40°C to +95°C, 78-ball VFBGA - pinout and timing match JEDEC standard but differs in ZQ and ODT register mapping | Validated in automotive infotainment platforms; requires validation of MR1/MR2 bit definitions and ZQ startup sequence | Preferred for designs already using Micron DDR3L ecosystem; verify MR programming sequence and tZQinit timing against W632GU8NB12I |
Compared with IS43TR16256B-125KBL and MT41K256M8DA-125:A, W632GU8NB12I offers native x8 interface compatibility, Winbond's optimized industrial qualification, and simplified ZQ calibration flow - making it ideal for space-constrained, thermally demanding embedded systems where pin-for-pin replacement is required.
Availability
W632GU8NB12I is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU8NB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W632GU8NB12I belongs to Winbond's DDR3L SDRAM product line, designed specifically for industrial and embedded applications demanding low-voltage operation, extended temperature reliability, and JEDEC-compliant interoperability with mainstream memory controllers.
FAQ
What is the maximum supported CAS Latency for W632GU8NB12I at DDR3L-1600 speed?
W632GU8NB12I supports CAS Latency (CL) settings of 5 through 11, 13, and 14. At DDR3L-1600 (11-11-11), CL = 11 is the required setting per JEDEC specification. Lower CL values (e.g., CL = 9 or 10) are permitted only at reduced frequencies and must be validated against tRCD and tRP timing constraints specified in the datasheet.
Does W632GU8NB12I support both 1.35 V and 1.5 V operation?
Yes, W632GU8NB12I is backward compatible with 1.5 V DDR3 systems. It operates at 1.35 V nominal (VDD/VDDQ = 1.283–1.45 V) for DDR3L mode and supports 1.5 V ± 0.075 V for legacy DDR3 compatibility. Voltage switching between modes requires proper sequencing and MR reprogramming; the device does not auto-detect supply voltage.
How is ZQ calibration performed on W632GU8NB12I?
ZQ calibration on W632GU8NB12I is initiated via MRS command (MRS with A10 = HIGH) and requires connection of a 240 Ω ±1 % resistor from the ZQ pin to VSS. The calibration adjusts output driver strength and ODT impedance to compensate for PVT variations. One-time calibration at power-up is mandatory; periodic recalibration is recommended after large temperature shifts (>40°C).
What is the function of the RESET# pin on W632GU8NB12I?
The RESET# pin on W632GU8NB12I provides asynchronous hardware reset for power-up initialization and recovery from error states. A low pulse ≥ 200 ns initiates the internal reset sequence, which includes DLL initialization, internal register clearing, and preparation for mode register setup. RESET# must be asserted before issuing any command after power stabilization.
Can W632GU8NB12I operate in Partial Array Self-Refresh (PASR) mode?
Yes, W632GU8NB12I supports PASR via MR2 programming (bits A0–A2). PASR allows refresh of only selected banks (1/2/4/8 banks), reducing self-refresh current (IDD6) proportionally. This feature is especially valuable in battery-powered or thermally constrained applications where full-array refresh is unnecessary and power savings are critical.
W632GU8NB12I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GU8NB12I FAQ
1.How can I place an order for W632GU8NB12I through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8NB12I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8NB12I reliable?
The price and inventory of W632GU8NB12I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8NB12I is usually 5 days.
3.What payment methods are accepted for W632GU8NB12I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8NB12I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8NB12I?
W632GU8NB12I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8NB12I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8NB12I?
For technical support, including W632GU8NB12I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8NB12I requirements.
6.How does Aetrix verify that W632GU8NB12I is sourced from the original manufacturer or authorized distributors?
All W632GU8NB12I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8NB12I meets industry standards.
7.What is the process for return or replacement of W632GU8NB12I?
All W632GU8NB12I units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8NB12I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8NB12I part is unused and in its original packaging.
Return procedure for W632GU8NB12I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8NB12I Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
