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Winbond Electronics Corporation W632GU8NB12I TR

Name: W632GU8NB12I TR
Brand: Winbond Electronics Corporation
SKU: W632GU8NB12I TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W632GU8NB12I TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 78-VFBGA

Datasheet:: W632GU8NB12I TR.pdf

Description:: IC DRAM 2GBIT 78-VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W632GU8NB12I TR from Winbond is a 2Gb (256M × 8) DDR3L SDRAM in VFBGA-78 package, operating at 1.35V nominal supply with DDR3L-1600 (11-11-11) speed grade, supporting industrial temperature range (–40°C to +95°C), and delivering up to 1600 MT/s data transfer rate for memory subsystems in networking routers and industrial HMIs.

For engineers reviewing the W632GU8NB12I TR datasheet, W632GU8NB12I TR pinout, W632GU8NB12I TR application, or W632GU8NB12I TR equivalent, key selection considerations include CAS latency (CL=11), programmable CWL (5–8), on-die termination (ODT) support, ZQ calibration capability, and industrial-grade thermal reliability across power-down and self-refresh modes.

Technical Context

This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, synchronous double-data-rate operation referenced to differential CK/CK# inputs and DQS/DQS# strobes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization during high-bandwidth read/write bursts.

The device integrates asynchronous RESET#, dynamic ODT (Rtt_WR), multi-purpose register (MPR) for timing calibration, and write leveling for system-level signal integrity tuning. All timing parameters-including tRCD=13.75 ns, tRP=13.75 ns, and tAA=13.75 ns-are guaranteed under DDR3L-1600 conditions at VDD/VDDQ = 1.35V ±0.067V and industrial temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	2 Gb (256M words × 8 bits), organized as 32M × 8 banks × 8 bits
Data Rate	1600 MT/s (DDR3L-1600), with tCK(AVG) = 1.25–1.875 ns depending on CL/CWL
Supply Voltage	VDD/VDDQ = 1.283 V to 1.45 V (1.35 V nominal); backward compatible to 1.5 V ±0.075 V
CAS Latency	Configurable CL = 5, 6, 7, 8, 9, 10, 11, 13, 14; CL = 11 required for DDR3L-1600 operation
CAS Write Latency	Programmable CWL = 5–8; WL = AL + CWL, supporting precise write timing alignment
Operating Temperature	–40°C ≤ TCASE ≤ +95°C (industrial grade), with extended refresh (tREFI = 3.9 µS) above 85°C
Package	VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height), RoHS-compliant, lead-free
Key Timing (CL11)	tRCD/tRP/tAA = 13.75 ns min; tRC = 48.75 ns min; tRAS = 35 ns min - all JEDEC-compliant

Pinout & Package

VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height) with 78 solder balls arranged in 8×10 array plus 2 dummy balls (B1, H10). Ball pitch is 0.8 mm. Package complies with JEDEC MO-270AB standard and uses lead-free, RoHS-compliant materials.

Pin/Terminal	Circuit Role	Design Meaning
A1	VDD	Core power supply (1.35 V); must be decoupled per JEDEC DDR3L layout guidelines
A2	A0	Row address bit 0; sampled on rising edge of CK for ACT/READ/WRITE commands
A3	A1	Row address bit 1; used with A0–A15 for bank/row activation
A4	A2	Row address bit 2; part of 16-bit row address bus (A0–A15)
A5	A3	Row address bit 3; supports 32M-word addressing per bank
A6	A4	Row address bit 4; enables full 256M-word capacity across 8 banks
A7	A5	Row address bit 5; contributes to bank selection and row decoding
A8	A6	Row address bit 6; used in mode register set (MRS) and extended mode registers
A9	A7	Row address bit 7; participates in PASR and ASR configuration
A10	A8	Row address bit 8; controls burst length (BL8/BC4) and MPR access
A11	A9	Row address bit 9; selects MR0–MR3 during mode register writes
A12	BA0	Bank address bit 0; selects one of eight internal banks (BA0–BA2)
A13	BA1	Bank address bit 1; enables concurrent bank operations for latency hiding
A14	BA2	Bank address bit 2; completes 3-bit bank decode for 8-bank architecture
A15	CK	Differential clock input (positive); all commands latched at CK rising / CK# falling crossing point
A16	CK#	Differential clock input (negative); defines system timing reference with CK
B1	NC	No connect; mechanical dummy ball for coplanarity and thermal relief
B2	CKE	Clock enable; low disables internal clocks, enters power-down mode
B3	CS#	Chip select; active-low command qualifier; must be stable before command sampling
B4	RAS#	Row address strobe; initiates ACT, PRE, REF, and MRS commands when combined with CS# and WE#
B5	CAS#	Column address strobe; qualifies READ/WRITE/MPR commands; supports posted CAS
B6	WE#	Write enable; determines command type with RAS# and CAS# (e.g., RAS#&CAS#&WE# = RESET#)
B7	DM0	Data mask for DQ0–DQ7; masks write data on corresponding byte lane during burst writes
B8	DQ0	Data I/O bit 0; bidirectional; synchronized to DQS/DQS# edges in source-synchronous fashion
B9	DQ1	Data I/O bit 1; part of 8-bit data bus; supports BL8 and BC4 burst modes
B10	DQ2	Data I/O bit 2; operates at 1600 MT/s with controlled slew rate and impedance matching
C1	DQ3	Data I/O bit 3; requires matched trace length to DQS for setup/hold compliance
C2	DQ4	Data I/O bit 4; shares ODT termination settings with DQ0–DQ7 via RTT_NOM/RTT_WR
C3	DQ5	Data I/O bit 5; supports dynamic ODT during writes for improved signal integrity
C4	DQ6	Data I/O bit 6; calibrated via ZQ resistor (240 Ω ±1%) for output driver and ODT accuracy
C5	DQ7	Data I/O bit 7; last bit of x8 interface; enables byte-level masking and error detection
C6	DQS0	Differential data strobe pair (positive); edge-aligned with read data, center-aligned with write data
C7	DQS0#	Differential data strobe pair (negative); provides timing reference for DQ0–DQ7 sampling
C8	VSS	Digital ground; dedicated return path for core logic and I/O circuits
C9	VDDQ	I/O power supply (1.35 V); independent from VDD to reduce noise coupling
C10	RESET#	Asynchronous reset; initiates power-up initialization sequence and clears internal state
D1	ODT	On-die termination control; enables/disables RTT_NOM and RTT_WR per MR1/MR2 settings
D2	VSS	Digital ground; multiple VSS balls ensure low-impedance return for high-speed switching
D3	VDD	Core power supply; second VDD ball improves current distribution and reduces IR drop
D4	VDDQ	I/O power supply; second VDDQ ball stabilizes strobe and data output voltage levels
D5	ZQ	ZQ calibration reference; connects to external 240 Ω ±1% resistor to ground for driver/ODT tuning
D6	VSS	Digital ground; supports decoupling capacitor placement near high-current I/O pins
D7	VDD	Core power supply; third VDD ball enhances power integrity for bank activation logic
D8	VDDQ	I/O power supply; third VDDQ ball maintains DQS/DQ timing margin under load
D9	VSS	Digital ground; fourth VSS ball minimizes simultaneous switching noise (SSN)
D10	VDD	Core power supply; fourth VDD ball ensures stable operation during burst refresh
E1	VSS	Digital ground; fifth VSS ball supports high-frequency return path for CK/CK# signals
E2	VDD	Core power supply; fifth VDD ball reduces voltage droop during multi-bank activation
E3	VDDQ	I/O power supply; fourth VDDQ ball improves DQS/DQS# common-mode stability
E4	VSS	Digital ground; sixth VSS ball isolates analog-sensitive DLL circuitry
E5	VDD	Core power supply; sixth VDD ball supplies DLL and phase detector circuitry
E6	VSS	Digital ground; seventh VSS ball provides return for RESET# and ODT control lines
E7	VDDQ	I/O power supply; fifth VDDQ ball supports MPR and write leveling calibration logic
E8	VSS	Digital ground; eighth VSS ball completes low-inductance loop for DQS/DQS# routing
E9	VDD	Core power supply; seventh VDD ball powers internal mode register and command decoder
E10	VSS	Digital ground; ninth VSS ball ensures robustness against board-level EMI
F1	VDDQ	I/O power supply; sixth VDDQ ball stabilizes DM0 and DQ0–DQ7 during masked writes
F2	VSS	Digital ground; tenth VSS ball supports thermal dissipation and mechanical rigidity
F3	VDD	Core power supply; eighth VDD ball delivers current to refresh controller and PASR logic
F4	VSS	Digital ground; eleventh VSS ball reduces crosstalk between address and data buses
F5	VDDQ	I/O power supply; seventh VDDQ ball maintains signal integrity for DQS0/DQS0#
F6	VSS	Digital ground; twelfth VSS ball grounds unused ball positions (H10) and improves coplanarity
F7	VDD	Core power supply; ninth VDD ball powers DLL and clock tree distribution network
F8	VSS	Digital ground; thirteenth VSS ball ensures uniform current density across package substrate
F9	VDDQ	I/O power supply; eighth VDDQ ball supports high-speed toggling of DQ/DQS during BL8 bursts
F10	VSS	Digital ground; fourteenth VSS ball completes ground ring for EMI shielding
G1	VDD	Core power supply; tenth VDD ball supplies standby current during self-refresh mode
G2	VSS	Digital ground; fifteenth VSS ball anchors thermal pad region for heat conduction
G3	VDDQ	I/O power supply; ninth VDDQ ball powers output drivers during high-frequency write operations
G4	VSS	Digital ground; sixteenth VSS ball isolates power delivery network from signal routing layers
G5	VDD	Core power supply; eleventh VDD ball supports MR2/MR3 programming for PASR/ASR
G6	VSS	Digital ground; seventeenth VSS ball minimizes ground bounce during burst refresh cycles
G7	VDDQ	I/O power supply; tenth VDDQ ball ensures stable termination for dynamic ODT transitions
G8	VSS	Digital ground; eighteenth VSS ball provides return path for ZQ calibration current
G9	VDD	Core power supply; twelfth VDD ball powers internal temperature sensor for SRT control
G10	VSS	Digital ground; nineteenth VSS ball completes ground plane for bottom-side routing
H1	VDDQ	I/O power supply; eleventh VDDQ ball supports DQS0/DQS0# differential swing compliance
H2	VSS	Digital ground; twentieth VSS ball improves signal-to-noise ratio for CK/CK# inputs
H3	VDD	Core power supply; thirteenth VDD ball powers DLL reset and initialization logic
H4	VSS	Digital ground; twenty-first VSS ball reduces jitter accumulation in clock distribution
H5	VDDQ	I/O power supply; twelfth VDDQ ball maintains DQ/DQS timing margin under voltage droop
H6	VSS	Digital ground; twenty-second VSS ball supports high-frequency return for DQS0/DQS0#
H7	VDD	Core power supply; fourteenth VDD ball delivers current to auto-precharge and burst logic
H8	VSS	Digital ground; twenty-third VSS ball ensures consistent reference for ODT impedance calibration
H9	VDDQ	I/O power supply; thirteenth VDDQ ball powers MPR read pattern generator
H10	NC	No connect; mechanical dummy ball; not electrically bonded

Key Features

Feature	Design Value
Industrial Temperature Support	Guaranteed operation from –40°C to +95°C with full JEDEC AC/DC specs and extended tREFI = 3.9 µS above 85°C
Dynamic On-Die Termination (ODT)	Configurable RTT_NOM (60/120/240 Ω) and RTT_WR (60/120 Ω) via MR1/MR2; improves write signal integrity without external resistors
ZQ Calibration	Single external 240 Ω ±1% resistor calibrates both output driver strength and ODT impedance over voltage/temperature
Write Leveling & MPR Support	Enables system-level timing calibration: write leveling adjusts DQS-to-CK skew; MPR outputs predefined pattern for DQ-to-DQS alignment
Power Management Modes	Precharge Power-Down, Active Power-Down, Self-Refresh, Auto Self-Refresh (ASR), and Partial Array Self-Refresh (PASR) reduce IDD6 to 15 mA
Backward Voltage Compatibility	Operates at 1.5 V ±0.075 V (DDR3) or 1.35 V ±0.067 V (DDR3L); no hardware change needed for migration between standards

Applications

Networking Infrastructure	Industrial Human-Machine Interface
Use Scenario: High-throughput packet buffering in Layer 3 enterprise switches handling 10Gbps+ line rates. IC Role / Device Role / Timing Role: Primary working memory for ASIC-based forwarding engines, requiring low-latency random access and sustained 1600 MT/s burst bandwidth. Use Value: DDR3L-1600 speed grade and CL11 timing deliver deterministic tRCD/tRP = 13.75 ns, enabling sub-100ns memory access critical for real-time traffic classification.	Use Scenario: Local display buffer and application code storage in ruggedized factory-floor HMIs with wide ambient temperature swings. IC Role / Device Role / Timing Role: Main system RAM supporting Linux OS execution and GUI rendering, operating continuously across –40°C to +95°C. Use Value: Industrial temperature rating and ASR/PASR features reduce self-refresh current to 15 mA while maintaining data retention during thermal transients.
Medical Imaging Control Unit	Automated Test Equipment (ATE)
Use Scenario: Frame buffer and acquisition memory in portable ultrasound systems requiring low-power, high-reliability operation. IC Role / Device Role / Timing Role: Dual-role memory: stores real-time B-mode image frames and buffers raw ADC data streams from transducer arrays. Use Value: VFBGA-78 package enables compact PCB layout; ZQ calibration and write leveling ensure signal integrity across variable cable lengths and probe configurations.	Use Scenario: Pattern memory and result storage in high-speed digital ATE platforms performing 100+ MHz functional tests. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory for test vector storage and pass/fail result logging during parallel device testing. Use Value: BL8 burst mode and bank interleaving (IDD7 = 215 mA) sustain >1.2 GB/s effective bandwidth, minimizing test cycle time overhead.

Networking Infrastructure

Industrial Human-Machine Interface

Use Scenario: High-throughput packet buffering in Layer 3 enterprise switches handling 10Gbps+ line rates.

IC Role / Device Role / Timing Role: Primary working memory for ASIC-based forwarding engines, requiring low-latency random access and sustained 1600 MT/s burst bandwidth.

Use Value: DDR3L-1600 speed grade and CL11 timing deliver deterministic tRCD/tRP = 13.75 ns, enabling sub-100ns memory access critical for real-time traffic classification.

Use Scenario: Local display buffer and application code storage in ruggedized factory-floor HMIs with wide ambient temperature swings.

IC Role / Device Role / Timing Role: Main system RAM supporting Linux OS execution and GUI rendering, operating continuously across –40°C to +95°C.

Use Value: Industrial temperature rating and ASR/PASR features reduce self-refresh current to 15 mA while maintaining data retention during thermal transients.

Medical Imaging Control Unit

Automated Test Equipment (ATE)

Use Scenario: Frame buffer and acquisition memory in portable ultrasound systems requiring low-power, high-reliability operation.

IC Role / Device Role / Timing Role: Dual-role memory: stores real-time B-mode image frames and buffers raw ADC data streams from transducer arrays.

Use Value: VFBGA-78 package enables compact PCB layout; ZQ calibration and write leveling ensure signal integrity across variable cable lengths and probe configurations.

Use Scenario: Pattern memory and result storage in high-speed digital ATE platforms performing 100+ MHz functional tests.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory for test vector storage and pass/fail result logging during parallel device testing.

Use Value: BL8 burst mode and bank interleaving (IDD7 = 215 mA) sustain >1.2 GB/s effective bandwidth, minimizing test cycle time overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K256M8RH-125:E (Micron)	Same 2Gb ×8 density, VFBGA-78, DDR3L-1600; CL11, tRCD/tRP = 13.75 ns; supports –40°C to +95°C but requires separate VDDQ decoupling design	Validated in Micron's automotive-qualified reference designs; lacks integrated write leveling MPR pattern	Select if leveraging Micron's ecosystem tools and require automotive qualification path; verify ODT timing margins due to different DLL implementation
IS43TR16256B-125KBL (ISSI)	2Gb ×8, VFBGA-78, DDR3L-1600; CL11, tRCD/tRP = 13.75 ns; industrial temp rated; includes enhanced ZQ tracking but no PASR support	Optimized for cost-sensitive industrial controllers; lower IDD0 (115 mA vs 120 mA) but higher tREFI dependency above 85°C	Choose for budget-constrained designs where partial array self-refresh is unnecessary and ZQ recalibration frequency is acceptable

Compared with MT41K256M8RH-125:E and IS43TR16256B-125KBL, W632GU8NB12I TR uniquely combines industrial temperature reliability, PASR for selective bank retention, and integrated write leveling + MPR for simplified system calibration-reducing FPGA resource usage and board-level tuning effort.

Availability

W632GU8NB12I TR is available at Aetrix Electronics and suitable for networking infrastructure, industrial human-machine interfaces, and medical imaging control units requiring stable component supply, long-term lifecycle assurance, and industrial-temperature-rated memory performance.

Supply support for W632GU8NB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, communications, and consumer markets.

W632GU8NB12I TR belongs to Winbond's DDR3L SDRAM product line, engineered for industrial and networking applications demanding reliable low-voltage operation, extended temperature support, and JEDEC-compliant timing across power-management states.

FAQ

What is the operating voltage range for W632GU8NB12I TR?

W632GU8NB12I TR operates at VDD/VDDQ = 1.283 V to 1.45 V (1.35 V nominal), fully compliant with DDR3L specifications. It also supports backward compatibility with 1.5 V ±0.075 V DDR3 operation without hardware modification, enabling flexible platform migration. The device maintains full JEDEC AC/DC performance across this range when used with appropriate decoupling and layout practices.

Does W632GU8NB12I TR support industrial temperature operation?

Yes, W632GU8NB12I TR is qualified for –40°C ≤ TCASE ≤ +95°C with full JEDEC AC and DC specifications. At temperatures above 85°C, it mandates doubled auto-refresh frequency (tREFI = 3.9 µS) and supports Manual Self-Refresh with Extended Temperature Range mode (MR2 A6 = 0b, A7 = 1b) to maintain data retention and timing integrity.

How does W632GU8NB12I TR implement on-die termination (ODT)?

W632GU8NB12I TR supports programmable ODT via MR1 and MR2 registers, offering RTT_NOM values of 60 Ω, 120 Ω, or 240 Ω for reads, and RTT_WR values of 60 Ω or 120 Ω for writes. Dynamic ODT (Rtt_WR) can be enabled during write operations to improve signal integrity without requiring external resistors or layout changes.

What calibration features does W632GU8NB12I TR provide for system timing alignment?

W632GU8NB12I TR includes write leveling and Multi-Purpose Register (MPR) functionality. Write leveling adjusts DQS-to-CK skew during initialization; MPR outputs a predefined bit pattern (0x00000000) for DQ-to-DQS alignment verification. Both features reduce FPGA or controller firmware complexity and eliminate manual scope-based tuning in high-speed designs.

Can W632GU8NB12I TR operate in low-power modes during system idle periods?

Yes, W632GU8NB12I TR supports Precharge Power-Down, Active Power-Down, Self-Refresh, Auto Self-Refresh (ASR), and Partial Array Self-Refresh (PASR). In Self-Refresh mode, IDD6 is as low as 15 mA, and PASR allows selective retention of active banks only-reducing power by up to 40% compared to full-array refresh in memory-intensive embedded applications.

W632GU8NB12I TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 78-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3L

Memory Size:: 2Gbit

Memory Organization:: 256M x 8

Memory Interface:: Parallel

Clock Frequency:: 800 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.283V ~ 1.45V

Operating Temperature:: -40°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 78-VFBGA (8x10.5)

W632GU8NB12I TR FAQ

1.How can I place an order for W632GU8NB12I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W632GU8NB12I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W632GU8NB12I TR reliable?

The price and inventory of W632GU8NB12I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8NB12I TR is usually 5 days.

3.What payment methods are accepted for W632GU8NB12I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8NB12I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W632GU8NB12I TR?

W632GU8NB12I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W632GU8NB12I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W632GU8NB12I TR?

For technical support, including W632GU8NB12I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8NB12I TR requirements.

6.How does Aetrix verify that W632GU8NB12I TR is sourced from the original manufacturer or authorized distributors?

All W632GU8NB12I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8NB12I TR meets industry standards.

7.What is the process for return or replacement of W632GU8NB12I TR?

All W632GU8NB12I TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8NB12I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W632GU8NB12I TR part is unused and in its original packaging.

Return procedure for W632GU8NB12I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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