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Winbond Electronics Corporation W632GU8NB15I TR
- Part No.:
- W632GU8NB15I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GU8NB15I TR.pdf
- Description:
- IC DRAM 2GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,043
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Product details
Overview
W632GU8NB15I TR from Winbond is a 2Gb (256M × 8) DDR3L SDRAM in VFBGA-78 package, operating at 1.35V nominal supply with DDR3L-1333 speed grade (9-9-9 CL/tRCD/tRP), supporting -40°C to +95°C industrial temperature range and featuring programmable CAS Write Latency (CWL=5–7), on-die termination (ODT), ZQ calibration, and asynchronous RESET#. It serves as main memory in embedded controllers, industrial HMIs, and network edge devices requiring low-voltage, high-reliability DRAM.
For engineers reviewing the W632GU8NB15I TR datasheet, W632GU8NB15I TR pinout, W632GU8NB15I TR application, or W632GU8NB15I TR equivalent, key selection criteria include its DDR3L-1333 timing compliance, industrial temperature support, VFBGA-78 mechanical compatibility, ODT configuration flexibility, and backward compatibility with 1.5V DDR3 systems.
Technical Context
This DDR3L SDRAM implements an 8-bank, 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with all commands latched on CK rising edge and data referenced to bidirectional DQS/DQS# strobes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.
Functional features include dynamic ODT for write signal integrity, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-to-DQS skew compensation, and partial array self-refresh (PASR) to reduce power during idle bank subsets. The device uses asynchronous RESET# for deterministic power-up initialization and supports both synchronous and asynchronous ODT modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M words × 8 bits), organized as 32M × 8 banks × 8 bits |
| Data Rate | DDR3L-1333: 1333 MT/s (667 MHz clock, tCK = 1.5 ns min) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V nominal); backward compatible to 1.5 V ± 0.075 V |
| Operating Temperature | -40°C ≤ TCASE ≤ 95°C (industrial grade, verified per JEDEC JESD22-A104) |
| CAS Latency (CL) | Programmable CL = 5, 6, 7, 8, 9, 10 (JEDEC-compliant 9-9-9 timing at CL=9) |
| CAS Write Latency (CWL) | Programmable CWL = 5, 6, 7 (CWL = 7 required for CL = 9 at DDR3L-1333) |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free) |
| Refresh Interval | tREFI = 7.8 µs at 0–85°C; 3.9 µs at 85–95°C (doubled refresh rate required) |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm profile, and ball pitch of 0.8 mm. Ball layout conforms to JEDEC MO-270DA standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address bits; A10 controls auto-precharge; A12/A13 select bank |
| BA0–BA2 | Bank Address | Select one of eight internal banks for concurrent operation |
| CK / CK# | Differential Clock | Edge-aligned command latch reference; all inputs sampled at CK rising / CK# falling crossing |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; source-synchronous with DQS/DQS# |
| DQS / DQS# | Differential Data Strobe | Center-aligned with write data, edge-aligned with read data; used for write leveling |
| DM | Data Mask | Per-byte write mask active high; masks corresponding DQ[7:0] during write bursts |
| RESET# | Asynchronous Reset | Active-low input for power-up initialization and functional reset; no clock dependency |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR termination resistors on DQ/DQS/DM |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command signals; decoded with A0–A14/BA0–BA2 to generate ACT, READ, WRITE, PRE, REF |
| VDD / VDDQ | Power Supplies | VDD = core voltage; VDDQ = I/O voltage; both 1.35 V nominal, decoupled separately |
| VSS | Ground | Signal and power ground planes; multiple balls ensure low-inductance return path |
Key Features
| Feature | Design Value |
|---|---|
| DDR3L Low-Voltage Operation | 1.35 V supply reduces system power by ~20% vs. 1.5 V DDR3 while maintaining full timing compliance |
| Programmable CWL & AL | Enables precise write timing alignment across frequency bins; AL = 0, CL−1, CL−2 optimizes command bus efficiency |
| ZQ Calibration | Uses external 240 Ω ±1% resistor to calibrate output driver strength and ODT impedance for consistent signal integrity |
| Dynamic ODT (Rtt_WR) | Activates ODT only during write operations to minimize standby current and improve write eye margin |
| Write Leveling Support | Allows controller to adjust DQS launch delay relative to CK to compensate for board trace skew |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by refreshing only active banks, critical for battery-backed applications |
Applications
| Industrial HMI Memory | Network Edge Router Buffer |
|---|---|
Use Scenario: Touch-enabled human-machine interface in factory automation panels requiring reliable memory under thermal cycling and EMI stress. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A series SoCs, interfacing via 8-bit DDR3L bus with strict tRCD/tRP timing enforcement. Use Value: Industrial temperature rating (-40°C to +95°C) and DDR3L-1333 timing stability ensure uninterrupted operation during ambient fluctuations and extended duty cycles. |
Use Scenario: Packet buffering in compact 5G small cell gateways where space-constrained PCBs demand low-profile VFBGA packaging. IC Role / Device Role / Timing Role: High-throughput buffer for packet reassembly and QoS queue management, leveraging BL8 burst efficiency and dynamic ODT for clean write transitions. Use Value: VFBGA-78 footprint (8 × 10.5 mm) enables dense memory placement; 1.35 V operation lowers thermal load in sealed enclosures. |
| Medical Imaging Subsystem | Automotive ADAS Camera Module |
Use Scenario: Real-time image frame storage in portable ultrasound devices needing deterministic latency and low-power self-refresh. IC Role / Device Role / Timing Role: Frame buffer for FPGA-based image processing pipeline, using PASR to minimize IDD6 current during idle scan intervals. Use Value: PASR support reduces self-refresh current to ≤15 mA, extending battery life without compromising frame capture readiness. |
Use Scenario: Vision processing buffer in rear-view camera modules subject to automotive-grade thermal and vibration requirements. IC Role / Device Role / Timing Role: Temporary storage for raw Bayer sensor data before ISP processing, relying on asynchronous RESET# for robust cold-start recovery. Use Value: Asynchronous RESET# ensures deterministic initialization after vehicle ignition, eliminating boot-time timing uncertainty in safety-critical paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16128B-15KLI | 16-bit bus width, 2Gb density, same DDR3L-1333 speed bin and -40°C to +95°C rating; requires PCB redesign for 96-ball FBGA vs. 78-ball | Targeted at higher-bandwidth SoCs needing 16-bit interface; not pin-compatible | Select when wider data bus and higher throughput are required; verify layout change impact on signal integrity |
| MT41K128M8RH-125:E | Same 8-bit, 2Gb, DDR3L-1333 spec; 78-ball VFBGA but different ball map (JEDEC-standardized vs. Winbond-specific); no PASR support | Suitable for cost-sensitive consumer designs where PASR is unused; lacks partial-array refresh capability | Choose for drop-in replacement where PASR is unnecessary; confirm RESET# timing and ZQ resistor value match |
Compared with W632GU8NB15I TR, IS43TR16128B-15KLI offers double the data width but demands board redesign, while MT41K128M8RH-125:E provides identical density and speed in JEDEC-standard VFBGA-78 but omits PASR-making W632GU8NB15I TR preferable for thermally constrained or battery-aware industrial systems.
Availability
W632GU8NB15I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging subsystems, and automotive ADAS camera modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W632GU8NB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GU8NB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for industrial and embedded applications demanding extended temperature operation, low-voltage efficiency, and JEDEC-compliant reliability under thermal and electrical stress.
FAQ
What is the maximum operating frequency supported by W632GU8NB15I TR?
W632GU8NB15I TR supports DDR3L-1333 operation at 667 MHz clock frequency (1333 MT/s data rate), with minimum tCK = 1.5 ns. Its speed bin is defined by 9-9-9 timing (CL/tRCD/tRP), and it is rated for full JEDEC AC/DC specifications across -40°C to +95°C. Higher-speed variants like W632GU8NB09I exist but require different part numbers and are not interchangeable with W632GU8NB15I TR.
Does W632GU8NB15I TR support backward compatibility with standard 1.5V DDR3 systems?
Yes, W632GU8NB15I TR is fully backward compatible with 1.5V DDR3 systems. It accepts VDD/VDDQ = 1.5V ± 0.075V and maintains functional compatibility with DDR3 command sets and timing parameters. However, when operated at 1.5V, it still complies with DDR3L-1333 timing and retains all features-including ODT, ZQ calibration, and PASR-without performance degradation.
How does the RESET# pin function in W632GU8NB15I TR?
The RESET# pin in W632GU8NB15I TR is asynchronous and active-low. It initiates power-up initialization sequence when asserted during stable power conditions and forces the device into a known state independent of clock or command activity. This ensures deterministic startup behavior in industrial systems where power sequencing may vary, and is essential for meeting JEDEC JESD22-A102 reliability requirements.
What termination options are available on W632GU8NB15I TR?
W632GU8NB15I TR supports programmable on-die termination (ODT) with three configurable resistances: RTT_NOM (60 Ω, 120 Ω, or off), RTT_WR (60 Ω or off), and dynamic ODT activation during writes. Termination is applied to DQ, DQS/DQS#, and DM lines. Configuration is done via MR1 and MR2 mode registers, and calibrated using the external 240 Ω ZQ reference resistor.
Can W632GU8NB15I TR operate in Partial Array Self-Refresh (PASR) mode?
Yes, W632GU8NB15I TR supports PASR via MR2 register settings (A6/A7 bits), allowing selective self-refresh of 1/2, 1/4, or 1/8 of total memory array. This reduces self-refresh current from typical 15 mA to as low as 7.5 mA depending on configuration, making it ideal for battery-powered or thermally constrained applications where full-array refresh is unnecessary.
W632GU8NB15I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GU8NB15I TR FAQ
1.How can I place an order for W632GU8NB15I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8NB15I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8NB15I TR reliable?
The price and inventory of W632GU8NB15I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8NB15I TR is usually 5 days.
3.What payment methods are accepted for W632GU8NB15I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8NB15I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8NB15I TR?
W632GU8NB15I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8NB15I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8NB15I TR?
For technical support, including W632GU8NB15I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8NB15I TR requirements.
6.How does Aetrix verify that W632GU8NB15I TR is sourced from the original manufacturer or authorized distributors?
All W632GU8NB15I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8NB15I TR meets industry standards.
7.What is the process for return or replacement of W632GU8NB15I TR?
All W632GU8NB15I TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8NB15I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8NB15I TR part is unused and in its original packaging.
Return procedure for W632GU8NB15I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8NB15I TR Tags
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