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Winbond Electronics Corporation W632GU8NB-15 TR
- Part No.:
- W632GU8NB-15 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W632GU8NB-15 TR.pdf
- Description:
- IC DRAM 2GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,271
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Product details
Overview
W632GU8NB-15 TR from Winbond is a 2Gb (256M × 8) DDR3L SDRAM in VFBGA-78 package, operating at 1.35V nominal supply with DDR3L-1333 speed grade (9-9-9 CL-tRCD-tRP), supporting industrial temperature range (0°C to 95°C), and delivering 1333 MT/s data rates for embedded computing and networking memory subsystems.
For engineers reviewing the W632GU8NB-15 TR datasheet, W632GU8NB-15 TR pinout, W632GU8NB-15 TR application, or W632GU8NB-15 TR equivalent, this page provides verified timing parameters, ball mapping, ODT configuration options, ZQ calibration support, and JEDEC-compliant power-down modes essential for DDR3L interface validation and layout design.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent bank activation and interleaved burst access. It supports programmable CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), and additive latency (AL = 0, CL−1, CL−2) to optimize command bus efficiency under varying clock frequencies.
The device features synchronous differential clocking (CK/CK#), source-synchronous DQS/DQS# strobes with DLL alignment, on-die termination (ODT) with dynamic Rtt_WR control, and system-level calibration via write leveling and Multi-Purpose Register (MPR) read patterns-all compliant with JEDEC JESD79-3F DDR3L specifications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M words × 8 bits), organized as 32M × 8 banks × 8 bits |
| Data Rate | 1333 MT/s (DDR3L-1333), tCK = 1.5 ns min, 1.875 ns max |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V nominal); backward compatible to 1.5 V ± 0.075 V |
| CAS Latency | CL = 5, 6, 7, 8, 9, or 10 (supported at DDR3L-1333 speed bin) |
| CAS Write Latency | CWL = 5, 6, or 7 (programmable per frequency; CWL = 7 at CL = 9) |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C (industrial grade, per -15 suffix) |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
| Refresh Interval | tREFI = 7.8 µs at 0°C–85°C; 3.9 µs at 85°C–95°C (doubled refresh rate) |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type BGA construction. Ball pitch is 0.8 mm; balls arranged in 9 rows (A–J) × 9 columns (1–9) with missing corner balls (A1, A9, J1, J9) per JEDEC MO-245 standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A2 | VDD | Core power supply (1.35 V); must be decoupled locally |
| A3 | CK | Differential clock input (rising edge active); referenced to CK# |
| A4 | CK# | Differential clock complement (falling edge active); referenced to CK |
| A5 | VSS | Digital ground reference for core logic |
| B1 | DQS0 | Differential data strobe for DQ[7:0]; center-aligned on write, edge-aligned on read |
| B2 | DQS0# | Complement of DQS0; used for source-synchronous timing recovery |
| C1 | RESET# | Asynchronous active-low reset; initiates power-up initialization sequence |
| E1 | ODT | On-die termination enable control; selects Rtt_Nom value during reads/writes |
| G1 | ZQ | External reference pin for ZQ calibration of output drivers and ODT impedances |
| H1 | VDDQ | I/O power supply (1.35 V); independent from VDD for noise isolation |
| J2 | DM0 | Data mask for DQ[7:0]; masks write data on corresponding byte lane |
| J3 | DQ0 | Bit 0 of primary data bus; bidirectional, DDR I/O with programmable drive strength |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | CWL = 5–7 selectable per operating frequency; enables precise write timing alignment at DDR3L-1333 |
| Dynamic On-Die Termination (Rtt_WR) | Configurable ODT impedance during write bursts only; improves signal integrity without affecting read paths |
| ZQ Calibration Support | Single external 240 Ω ±1% resistor to ground enables factory-trimmed output driver and ODT impedance matching |
| Write Leveling Calibration | Hardware-assisted delay adjustment for DQS-to-CK skew compensation; required for reliable high-speed writes |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via MRS; used for system-level timing margin verification and eye-diagram analysis |
| Partial Array Self-Refresh (PASR) | Selective bank refresh reduces IDD6 current by up to 50% when full-array refresh is unnecessary |
Applications
| Industrial HMI Controllers | Network Switch Buffers |
|---|---|
Use Scenario: Real-time display rendering and touch response in factory-floor HMIs requiring deterministic memory access latency. IC Role / Device Role / Timing Role: Primary system memory buffer interfacing with ARM Cortex-A series processors via 16-bit DDR3L bus. Use Value: DDR3L-1333 speed with CL=9 ensures sub-14 ns tAA and stable operation across 0°C–95°C ambient, eliminating thermal throttling in uncooled enclosures. |
Use Scenario: Packet buffering in Layer 2/L3 managed switches handling 1 Gbps+ line-rate traffic. IC Role / Device Role / Timing Role: Shared packet memory accessed concurrently by multiple MAC controllers and CPU cores. Use Value: Eight-bank architecture enables interleaved read/write bursts, sustaining >90% bus utilization under sustained 1333 MT/s traffic with minimal tRC penalty. |
| Medical Imaging Edge Devices | Automotive ADAS Video Preprocessing |
Use Scenario: Local frame buffering in portable ultrasound or X-ray edge devices where low-voltage operation extends battery life. IC Role / Device Role / Timing Role: Low-power working memory for FPGA-accelerated image reconstruction pipelines. Use Value: 1.35 V operation cuts IDD0 by ~25% vs. 1.5 V DDR3, while PASR and deep power-down modes reduce standby current to <15 mA. |
Use Scenario: Real-time camera feed preprocessing in front-facing ADAS modules before sensor fusion. IC Role / Device Role / Timing Role: High-reliability video frame store synchronized to MIPI CSI-2 receiver and GPU pipeline. Use Value: Asynchronous RESET# and robust tREFI scaling ensure deterministic initialization and refresh behavior across automotive temperature transients (−40°C to +95°C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8DA-125:A (Micron) | Same density (2Gb × 8), VFBGA-78, DDR3L-1600 (11-11-11); higher speed grade, tighter tCK = 1.25 ns | Requires PCB redesign for faster timing closure; not drop-in for W632GU8NB-15 TR's DDR3L-1333 layout | Select if system clock exceeds 667 MHz and board supports tighter setup/hold margins. |
| IS43TR16256B-15HBL (ISSI) | 16-bit bus (x16), same DDR3L-1333 speed, but different package (VFBGA-96) and ballout; no ZQ pin | Not pin-compatible; requires new layout and firmware adaptation for x16 vs. x8 interface | Choose only when wider data bus bandwidth is needed and ZQ calibration is handled externally. |
Compared with MT41K256M8DA-125:A and IS43TR16256B-15HBL, the W632GU8NB-15 TR offers direct JEDEC DDR3L-1333 compliance with integrated ZQ and write leveling-reducing external calibration complexity-while maintaining industrial temperature support and VFBGA-78 footprint compatibility with legacy DDR3L designs.
Availability
W632GU8NB-15 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network switch buffers, medical imaging edge devices, and automotive ADAS video preprocessing requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for W632GU8NB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W632GU8NB-15 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems requiring JEDEC-compliant low-voltage memory with extended temperature reliability and simplified calibration.
FAQ
What is the maximum operating frequency supported by W632GU8NB-15 TR?
The W632GU8NB-15 TR is rated for DDR3L-1333 operation, meaning its maximum data transfer rate is 1333 MT/s with a clock frequency (fCK) of 667 MHz. The minimum average clock period tCK(AVG) is 1.5 ns, and it supports CL settings up to 10 at this speed bin. This rating is validated across the full industrial temperature range (0°C to 95°C).
Does W632GU8NB-15 TR support both 1.35 V and 1.5 V operation?
Yes, W632GU8NB-15 TR supports dual-voltage operation: it is fully compliant with DDR3L specifications at 1.35 V (VDD/VDDQ = 1.283 V to 1.45 V), and also backward compatible with standard DDR3 at 1.5 V ± 0.075 V. Voltage switching between modes is supported per JEDEC JESD79-3F, but mode selection must be fixed prior to initialization and cannot be dynamically changed during operation.
How does the ZQ calibration function work on W632GU8NB-15 TR?
The W632GU8NB-15 TR uses the ZQ pin to connect to a single 240 Ω ±1% external resistor to ground. During ZQ calibration commands (ZQCL or ZQCS), the device measures this reference and trims internal output driver and ODT impedances to match JEDEC-specified targets (e.g., Rtt_Nom = 60 Ω, 120 Ω). Calibration must be performed after power-up, after significant temperature shifts (>5°C), and periodically during operation per datasheet recommendations.
What is the purpose of the RESET# pin on W632GU8NB-15 TR?
The RESET# pin on W632GU8NB-15 TR is an asynchronous, active-low signal that triggers the power-up initialization sequence and allows runtime reset of the SDRAM state machine. When asserted, it forces all banks to idle, clears mode registers, and resets DLL and ODT states. It must be held low for ≥200 ns after stable VDD/VDDQ and clocks are established, per JEDEC initialization requirements.
Can W632GU8NB-15 TR operate in Partial Array Self-Refresh (PASR) mode?
Yes, W632GU8NB-15 TR supports Partial Array Self-Refresh (PASR) via MR2 programming (bits A6–A4). PASR allows selective refresh of only active memory banks, reducing self-refresh current (IDD6) by up to 50% compared to full-array refresh. This feature is especially valuable in battery-powered or thermally constrained applications where minimizing standby power is critical.
W632GU8NB-15 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W632GU8NB-15 TR FAQ
1.How can I place an order for W632GU8NB-15 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W632GU8NB-15 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W632GU8NB-15 TR reliable?
The price and inventory of W632GU8NB-15 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W632GU8NB-15 TR is usually 5 days.
3.What payment methods are accepted for W632GU8NB-15 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W632GU8NB-15 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W632GU8NB-15 TR?
W632GU8NB-15 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W632GU8NB-15 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W632GU8NB-15 TR?
For technical support, including W632GU8NB-15 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W632GU8NB-15 TR requirements.
6.How does Aetrix verify that W632GU8NB-15 TR is sourced from the original manufacturer or authorized distributors?
All W632GU8NB-15 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W632GU8NB-15 TR meets industry standards.
7.What is the process for return or replacement of W632GU8NB-15 TR?
All W632GU8NB-15 TR units undergo pre-shipment inspection (PSI). If there is an issue with W632GU8NB-15 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W632GU8NB-15 TR part is unused and in its original packaging.
Return procedure for W632GU8NB-15 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W632GU8NB-15 TR Tags
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M24C02-WMN6TP
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