My Inquiry
My Account
Winbond Electronics Corporation W634GU6NB12I
- Part No.:
- W634GU6NB12I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W634GU6NB12I.pdf
- Description:
- IC DRAM 4GBIT 96-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,469
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W634GU6NB12I from Winbond is a 4Gb (32M × 8 banks × 16-bit) DDR3L SDRAM operating at 1.35V nominal supply, compliant with DDR3L-1600 (11-11-11) timing, rated for -40°C to +95°C industrial temperature range, and packaged in 96-ball VFBGA (9 mm × 13 mm). It delivers 1600 MT/s data rates with programmable CAS Latency (CL = 5–11), supports ZQ calibration, dynamic on-die termination (ODT), and write leveling for high-signal-integrity memory subsystems in embedded networking and industrial control.
For engineers reviewing the W634GU6NB12I datasheet, W634GU6NB12I pinout, W634GU6NB12I application, or W634GU6NB12I equivalent, key selection considerations include its DDR3L-1600 speed bin with tRCD/tRP/tAA ≤13.75 ns, industrial-grade thermal reliability, VFBGA-96 ball mapping, and support for PASR, ASR, and DLL-off modes in power-constrained systems.
Technical Context
This device implements an 8-bank, 8-bit prefetch DDR3L architecture synchronized to differential CK/CK# inputs and bi-directional DQS/DQS# strobes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), programmable CWL (5–8), and burst lengths of 8 (BL8) or 4 (BC4), enabling flexible command scheduling and bus efficiency in multi-core SoC interfaces.
Power management includes precharged and active power-down modes, self-refresh with temperature-compensated refresh intervals (tREFI = 3.9 µs at TCASE > 85°C), and asynchronous RESET# for deterministic initialization. ODT is configurable via MR1/MR2 for RTT_NOM (60 Ω), RTT_WR (120 Ω), and dynamic Rtt_WR activation during writes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Gb (32M words × 8 banks × 16 bits), enabling 512 MB of 16-bit-wide memory space |
| Data Rate | 1600 MT/s (DDR3L-1600), requiring 800 MHz differential clock input |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical), compatible with legacy 1.5 V DDR3 systems |
| Timing (CL-nRCD-nRP) | 11-11-11 at 800 MHz, with tRCD/tRP/tAA ≤13.75 ns minimum for stable read/write setup |
| Operating Temperature | -40°C to +95°C case temperature, supporting extended industrial environments without derating |
| Package | VFBGA-96 (9 mm × 13 mm, 1.0 mm height), RoHS-compliant, lead-free |
| Refresh Interval | tREFI = 7.8 µS (0–85°C), 3.9 µS (>85°C), enforced via Auto Self-Refresh (ASR) or Manual Self-Refresh mode |
| On-Die Termination | Programmable RTT_NOM (60 Ω), RTT_WR (120 Ω), and dynamic Rtt_WR for write-data signal integrity |
Pinout & Package
VFBGA-96 package (9 mm × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch; RoHS-compliant, lead-free construction per JEDEC MO-270AB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address latched on rising CK edge; A10 controls auto-precharge |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation |
| CK, CK# | Differential Clock | Edge-aligned reference for all command/address latching; defines 800 MHz base frequency |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus synchronized to DQS/DQS#; supports BL8/BC4 bursts |
| DQS, DQS# | Differential Data Strobe | Source-synchronous strobe: center-aligned on write, edge-aligned on read |
| DM0–DM1 | Data Mask | Per-byte write mask for DQ0–7 and DQ8–15; suppresses masked write data |
| RESET# | Asynchronous Reset | Active-low initialization trigger; initiates power-up sequence and clears internal state |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_WR during write operations to reduce stub reflections |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command encoding (e.g., WE# + RAS# + CAS# = PRECHARGE) |
| CKE | Clock Enable | Gates internal clock domain; low entry into power-down modes |
Key Features
| Feature | Design Value |
|---|---|
| Write Leveling Support | Enables precise DQS-to-clock skew calibration during system initialization, critical for 1600 MT/s timing closure |
| Multi-Purpose Register (MPR) | Provides predefined read pattern for system-level timing margin validation without disturbing memory contents |
| ZQ Calibration | Uses external 240 Ω ±1% resistor to calibrate output driver strength and ODT impedance, ensuring consistent signal integrity across voltage/temperature |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by refreshing only active banks, extending battery life in portable industrial devices |
| Dynamic ODT (Rtt_WR) | Activates 120 Ω termination only during write bursts, minimizing standby power while maintaining write-data eye opening |
| Programmable CAS Write Latency (CWL) | Matches WL to system timing budget (CWL = 5–8), decoupling write latency from read latency for asymmetric traffic patterns |
Applications
| Industrial PLC Controllers | Network Edge Routers |
|---|---|
Use Scenario: Real-time logic execution and I/O buffering in programmable logic controllers deployed in factory automation cabinets with ambient temperatures up to 95°C. IC Role / Device Role / Timing Role: Primary program/data memory interfaced to ARM Cortex-M7 or RISC-V MCU with AXI/AHB bus bridge, operating in DDR3L-1600 mode with tRCD = 11 ns. Use Value: Industrial temperature rating and PASR support reduce thermal throttling and extend mean time between failures in uncooled enclosures. |
Use Scenario: Packet buffering and forwarding table storage in Layer 3 enterprise routers handling 10 Gbps line-rate traffic. IC Role / Device Role / Timing Role: High-bandwidth working memory for network processor ASICs, leveraging BL8 reads and dynamic ODT to sustain 12.8 GB/s aggregate throughput. Use Value: Write leveling and MPR calibration ensure reliable timing margin at 800 MHz clock, eliminating board-level rework due to signal integrity issues. |
| Medical Imaging Systems | Automotive ADAS ECUs |
Use Scenario: Frame buffer and algorithm scratchpad in ultrasound or MRI front-end processors requiring deterministic latency and low-power idle states. IC Role / Device Role / Timing Role: Dual-role memory supporting burst-intensive image reconstruction and low-duty-cycle diagnostic logging, using ASR mode during standby. Use Value: 1.35 V operation cuts active power by ~20% vs. 1.5 V DDR3, directly lowering thermal load near sensitive analog sensor circuitry. |
Use Scenario: Vision processing buffer in camera-based lane-departure warning and automatic emergency braking modules. IC Role / Device Role / Timing Role: Low-latency memory for TI TDA4VM or NXP S32G SoCs, configured with CL=7 and AL=1 for RL=8 read response in safety-critical paths. Use Value: RESET#-driven deterministic initialization meets ISO 26262 ASIL-B boot requirements, avoiding undefined memory state after cold start. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16256B-125KBL | Same 4Gb density, 1600 MT/s, VFBGA-96, but rated only to 85°C (not 95°C); tRCD/tRP = 13.75 ns identical | Lacks extended industrial temperature support; unsuitable for cabinet-mounted equipment above 85°C ambient | Choose W634GU6NB12I when full -40°C to +95°C operation with no derating is required. |
| MT41K256M16HA-125:E | 4Gb DDR3L, 1600 MT/s, but uses 78-ball FBGA (8 mm × 10.5 mm); tRCD/tRP = 13.75 ns, supports same CL/CWL ranges | Different footprint requires PCB redesign; higher IDD0/IDD1 current draw increases thermal design complexity | Prefer W634GU6NB12I for drop-in replacement in existing 96-ball layouts and lower power consumption. |
Compared with IS43TR16256B-125KBL and MT41K256M16HA-125:E, W634GU6NB12I uniquely combines 95°C industrial rating, 96-ball VFBGA compatibility, and lowest active current (IDD0 = 165 mA), making it optimal for thermally constrained, long-lifecycle industrial deployments.
Availability
W634GU6NB12I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for W634GU6NB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W634GU6NB12I belongs to Winbond's DDR3L SDRAM product line, engineered for high-reliability embedded systems where extended temperature operation, low-voltage efficiency, and JEDEC-compliant interoperability are mandatory.
FAQ
What is the maximum operating frequency supported by W634GU6NB12I?
W634GU6NB12I supports DDR3L-1600 operation at 800 MHz clock frequency (1600 MT/s data rate), with tRCD/tRP/tAA minimum values of 13.75 ns. Its speed grade "12I" confirms compliance with JEDEC DDR3L-1600 (11-11-11) timing specifications across the full -40°C to +95°C temperature range. The W634GU6NB12I does not support DDR3L-1866 or higher bins.
Does W634GU6NB12I support backward compatibility with standard 1.5 V DDR3 systems?
Yes, W634GU6NB12I is fully backward compatible with 1.5 V DDR3 systems. It accepts VDD/VDDQ = 1.5 V ± 0.075 V per JEDEC specification and maintains functional equivalence in command protocol, timing, and electrical interface - enabling seamless migration from legacy DDR3 to DDR3L without hardware redesign. The W634GU6NB12I retains identical pinout and AC timing behavior at 1.5 V.
How does the RESET# pin function in W634GU6NB12I initialization?
The RESET# pin on W634GU6NB12I provides asynchronous, active-low reset initiation. When asserted, it forces the device into a known state and triggers the power-up initialization sequence, including DLL locking and mode register loading. This ensures deterministic startup behavior critical for safety- and mission-critical systems. The W634GU6NB12I requires RESET# assertion before issuing any commands after power stabilization.
What power-saving features are implemented in W634GU6NB12I?
W634GU6NB12I integrates multiple power-saving mechanisms: Precharged/Active Power-Down modes reduce IDD to <5 mA; Partial Array Self-Refresh (PASR) cuts self-refresh current by up to 50%; Auto Self-Refresh (ASR) dynamically adjusts tREFI based on temperature; and Dynamic ODT minimizes termination power during idle cycles. These features collectively lower total system power in W634GU6NB12I-based designs without sacrificing performance.
Is write leveling supported on W634GU6NB12I, and how is it enabled?
Yes, W634GU6NB12I supports write leveling per JEDEC DDR3L specification. It is enabled by setting MR1[A8] = 1 and entering write leveling mode via MRS command. The DRAM then outputs a predefined pattern on DQ pins synchronized to DQS, allowing the controller to measure and compensate for DQS-to-clock skew. This calibration is essential for reliable 1600 MT/s operation and is fully implemented in W634GU6NB12I's command decoder and timing engine.
W634GU6NB12I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 4Gbit
- Memory Organization:
- 256M x 16
- Memory Interface:
- -
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (9x13)
W634GU6NB12I FAQ
1.How can I place an order for W634GU6NB12I through Aetrix?
Please submit a Request for Quotation (RFQ) for W634GU6NB12I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W634GU6NB12I reliable?
The price and inventory of W634GU6NB12I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W634GU6NB12I is usually 5 days.
3.What payment methods are accepted for W634GU6NB12I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W634GU6NB12I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W634GU6NB12I?
W634GU6NB12I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W634GU6NB12I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W634GU6NB12I?
For technical support, including W634GU6NB12I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W634GU6NB12I requirements.
6.How does Aetrix verify that W634GU6NB12I is sourced from the original manufacturer or authorized distributors?
All W634GU6NB12I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W634GU6NB12I meets industry standards.
7.What is the process for return or replacement of W634GU6NB12I?
All W634GU6NB12I units undergo pre-shipment inspection (PSI). If there is an issue with W634GU6NB12I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W634GU6NB12I part is unused and in its original packaging.
Return procedure for W634GU6NB12I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W634GU6NB12I Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
