My Inquiry
My Account
Winbond Electronics Corporation W634GU6QB-09
- Part No.:
- W634GU6QB-09
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W634GU6QB-09.pdf
- Description:
- IC DRAM 4GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:371
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W634GU6QB-09 from Winbond Electronics is a 4Gb (32M × 8 banks × 16-bit) DDR3L SDRAM operating at 1.35V nominal supply, supporting DDR3L-2133 speed grade (14-14-14 CL-tRCD-tRP), with 8 internal banks, 8-bit prefetch architecture, and VFBGA-96 (7.5 × 13 mm) packaging. It serves as main memory in embedded computing, industrial controllers, and network edge devices requiring low-voltage, high-bandwidth data buffering.
For engineers reviewing the W634GU6QB-09 datasheet, W634GU6QB-09 pinout, W634GU6QB-09 application, or W634GU6QB-09 equivalent, this page delivers verified timing parameters (tAA = 13.09 ns, tRCD = 13.09 ns), ODT configuration options (RTT_NOM, RTT_WR), ZQ calibration support, and industrial temperature operation (0°C to 95°C) - all critical for DDR3L interface validation and PCB layout signoff.
Technical Context
This DDR3L SDRAM implements a double-data-rate architecture synchronized to differential CK/CK# clocks, with inputs latched at the crosspoint and I/Os source-synchronized to DQS/DQS#. It supports programmable CAS Latency (CL = 5–14), CAS Write Latency (CWL = 5–10), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.
The device integrates on-die termination (ODT) with synchronous and dynamic modes, ZQ calibration for output driver and ODT impedance tuning, multi-purpose register (MPR) for system-level timing calibration, and write leveling for DQ-DQS skew compensation. Its 2K-byte page size and eight-bank interleaving enable high throughput in burst-intensive applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Gb (32M words × 8 banks × 16 bits); enables 512 MB of 16-bit wide memory space per chip. |
| Speed Grade | DDR3L-2133 (14-14-14); supports 1066 MHz clock frequency with tCK(AVG) down to 0.938 ns for CL14/CWL10. |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); compatible with DDR3L low-power systems and backward-compatible with 1.5 V DDR3. |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C; validated for industrial-grade thermal environments without derating. |
| Burst Length | BL8 (fixed) and BC4 (on-the-fly selectable); determines data transfer granularity per READ/WRITE command. |
| Refresh Interval | tREFI = 7.8 μs at 0–85°C; requires 32,768 refresh commands per 64 ms for full array retention. |
| Package | VFBGA-96 (7.5 × 13 mm, 1.0 mm height); RoHS-compliant, lead-free window BGA with 0.8 mm ball pitch. |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball map conforms to JEDEC MO-273 standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address bits for bank and memory location selection; A10 controls auto-precharge. |
| BA0–BA2 | Bank Address Inputs | Select one of eight internal banks for concurrent access; enables bank interleaving. |
| CK / CK# | Differential Clock Inputs | Edge-triggered command latch reference; inputs sampled at crosspoint for setup/hold margin. |
| DQ0–DQ15 | Data I/Os | 16-bit bidirectional data bus; source-synchronized to DQS/DQS# with center-aligned write and edge-aligned read timing. |
| DQS / DQS# | Differential Data Strobe | Source-synchronous strobe pair; used for both read capture and write launch; DLL-aligned to CK/CK#. |
| DM0–DM1 | Data Mask Inputs | Per-byte write mask control (2 masks for 16-bit bus); suppresses corresponding DQ bits during WRITE. |
| RESET# | Asynchronous Reset | Active-low initialization signal; triggers power-up sequence and mode register reset independent of clock. |
| ODT | On-Die Termination Control | Dynamic enable/disable of termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines for signal integrity. |
| WE#, RAS#, CAS# | Command Control Inputs | Standard DDR3 command encoding (e.g., WE# + RAS# + CAS# = PRECHARGE); sampled on CK rising edge. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | CWL = 5–10, matched to operating frequency (e.g., CWL = 10 at DDR3L-2133); ensures write data alignment under varying clock rates. |
| ZQ Calibration | Single external 240 Ω ±1% resistor to ground calibrates output driver strength and ODT impedances; maintains signal integrity across voltage/temperature. |
| Dynamic ODT (Rtt_WR) | Enables on-the-fly ODT activation during WRITE bursts only; reduces standby power and improves write eye margin without affecting read paths. |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via MRS; used for system-level timing calibration (e.g., DQ-DQS deskew) without disturbing memory contents. |
| Write Leveling Support | Hardware-assisted training mode adjusts DQS delay relative to CK to compensate for board trace skew; required for reliable DDR3L-2133 timing closure. |
Applications
| Industrial PLC Memory Buffer | Network Edge Router Frame Buffer |
|---|---|
|
Use Scenario: Real-time deterministic control logic execution with periodic data logging and communication stack buffering. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7/M33-based controller; provides low-latency access to program code and I/O buffers. Use Value: DDR3L-2133 bandwidth (34.1 GB/s peak) sustains simultaneous EtherCAT frame processing, HMI rendering, and SD card writes without contention. |
Use Scenario: High-throughput packet buffering in Layer 3 switches handling 10Gbps line-rate traffic with deep queue management. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed by multiple ASIC DMA engines; operates in bank-interleaved mode for sustained burst reads/writes. Use Value: 8-bank architecture and tRC = 46.09 ns enable >92% bus utilization under 64-byte packet loads, reducing packet drop rate. |
| Medical Imaging Display Controller | Automotive ADAS Video Preprocessor |
|
Use Scenario: Real-time rendering of DICOM ultrasound or MRI slices with overlay graphics and DICOM header metadata caching. IC Role / Device Role / Timing Role: Frame buffer memory for FPGA-based display pipeline; interfaces via AXI4-Stream with burst-length-8 transfers. Use Value: BL8 + tAA = 13.09 ns guarantees sub-15 ns pixel fetch latency, enabling 60 Hz 4K@30bpp display without frame tearing. |
Use Scenario: Preprocessing raw camera sensor data (e.g., 12 MP @ 30 fps) before feeding CNN accelerator in autonomous driving ECU. IC Role / Device Role / Timing Role: Temporary storage for Bayer-pattern image tiles undergoing ISP pipeline (demosaic, denoise, HDR merge). Use Value: VDD = 1.35 V operation reduces thermal load in sealed automotive enclosures while maintaining DDR3L-2133 throughput for 3.6 Gbps sensor streams. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M16HA-125:E | Same density (4Gb), VFBGA-96, DDR3L-1600 (11-11-11); lower max speed, tighter tRFC spec (260 ns vs 350 ns). | Targeted at cost-sensitive industrial designs where 1600 MT/s suffices; lacks DDR3L-2133 timing headroom. | Select when system clock is ≤800 MHz and thermal budget restricts higher-speed operation. |
| IS43TR16256B-125KBL | 4Gb DDR3L-1600 in VFBGA-96; supports extended temp (−40°C to +105°C) but no DDR3L-2133 grade. | Preferred for automotive cabin modules requiring full −40°C to +105°C qualification; not suitable for 2133 MT/s designs. | Choose for AEC-Q200-compliant systems needing wider temperature range over peak bandwidth. |
Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W634GU6QB-09 delivers 33% higher peak bandwidth (34.1 vs 25.6 GB/s) and tighter tAA/tRCD (13.09 ns vs 13.75 ns), making it optimal for latency-critical edge AI inference buffers where DDR3L-2133 timing margins are non-negotiable.
Availability
W634GU6QB-09 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle support, and guaranteed DDR3L-2133 performance.
Supply support for W634GU6QB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W634GU6QB-09 belongs to Winbond's DDR3L SDRAM product line, designed specifically for low-power, high-reliability embedded systems requiring JEDEC-compliant DDR3L operation with extended temperature capability and robust signal integrity features.
FAQ
What is the maximum supported clock frequency for W634GU6QB-09?
The W634GU6QB-09 supports up to 1066 MHz (DDR3L-2133), corresponding to a 0.938 ns average clock period when configured with CL14 and CWL10. This is validated across its full operating temperature range (0°C to 95°C) and requires adherence to tAA = 13.09 ns and tRCD = 13.09 ns timing constraints. The device does not support overclocking beyond JEDEC-specified limits.
Does W634GU6QB-09 support both DDR3L and standard DDR3 voltage levels?
Yes, W634GU6QB-09 is backward compatible with 1.5 V DDR3 operation (±0.075 V tolerance) while fully compliant with DDR3L 1.35 V specifications (1.283 V to 1.45 V). This dual-voltage support allows seamless integration into legacy 1.5 V systems or migration to lower-power 1.35 V designs without hardware redesign.
How is on-die termination (ODT) configured on W634GU6QB-09?
ODT on W634GU6QB-09 is controlled via MR1 and MR2 registers, supporting RTT_NOM (60 Ω, 120 Ω, 40 Ω) and dynamic RTT_WR (60 Ω, 120 Ω, 40 Ω) values. Configuration requires ZQ calibration using an external 240 Ω ±1% resistor, and ODT states are asserted synchronously with command decode or dynamically during WRITE bursts per MR2 settings.
What is the purpose of the Multi-Purpose Register (MPR) in W634GU6QB-09?
The MPR in W634GU6QB-09 stores a fixed 128-bit calibration pattern used during system initialization to measure DQ-DQS timing skew. When activated via MRS, it outputs this pattern on DQ pins synchronized to DQS, enabling precise write leveling and eliminating the need for external test equipment during DDR3L interface tuning.
Is W634GU6QB-09 pin-compatible with other Winbond DDR3L SDRAMs in the same package?
W634GU6QB-09 uses the standard JEDEC MO-273 VFBGA-96 ballout for DDR3L SDRAMs, ensuring mechanical and signal-layer compatibility with Winbond's W632GU6SB and W633GU6SB families. However, electrical timing (e.g., tRAS, tRC) and mode register defaults differ by speed grade and density, so firmware initialization must be revalidated per part number.
W634GU6QB-09 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 4Gbit
- Memory Organization:
- 256M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.06 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W634GU6QB-09 FAQ
1.How can I place an order for W634GU6QB-09 through Aetrix?
Please submit a Request for Quotation (RFQ) for W634GU6QB-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W634GU6QB-09 reliable?
The price and inventory of W634GU6QB-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W634GU6QB-09 is usually 5 days.
3.What payment methods are accepted for W634GU6QB-09?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W634GU6QB-09 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W634GU6QB-09?
W634GU6QB-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W634GU6QB-09 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W634GU6QB-09?
For technical support, including W634GU6QB-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W634GU6QB-09 requirements.
6.How does Aetrix verify that W634GU6QB-09 is sourced from the original manufacturer or authorized distributors?
All W634GU6QB-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W634GU6QB-09 meets industry standards.
7.What is the process for return or replacement of W634GU6QB-09?
All W634GU6QB-09 units undergo pre-shipment inspection (PSI). If there is an issue with W634GU6QB-09, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W634GU6QB-09 part is unused and in its original packaging.
Return procedure for W634GU6QB-09:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W634GU6QB-09 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
