Winbond Electronics Corporation W634GU6QB09I

Overview

W634GU6QB09I from Winbond Electronics is a 4Gb (32M × 8 banks × 16-bit) DDR3L SDRAM supporting DDR3L-2133 speed grade (14-14-14 CL-RCD-RP), 1.35V nominal VDD/VDDQ operation, and industrial temperature range (–40°C to +95°C). It delivers 2133 MT/s data transfer rates with 8-bank concurrency, programmable CAS latency (CL = 5–14), and on-die termination for high-speed memory subsystems in networking and embedded computing.

For engineers reviewing the W634GU6QB09I datasheet, W634GU6QB09I pinout, W634GU6QB09I application, or W634GU6QB09I equivalent, this device requires attention to its VFBGA-96 package layout, DDR3L-2133 timing compliance, industrial-grade thermal validation, ZQ calibration support, and asynchronous RESET# initialization sequence.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture synchronized to differential CK/CK# clocks, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ-DQS-clock timing across process, voltage, and temperature variations.

It supports full JEDEC DDR3L command set including ACTIVE, READ/WRITE with auto-precharge, PRECHARGE, REFRESH, SELF-REFRESH, and power-down modes. Mode registers MR0–MR3 configure CAS latency, additive latency, CWL, ODT settings, PASR, ASR, and MPR functionality - all accessible via standard address/command bus.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and window-type construction optimized for signal integrity and thermal dissipation in high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K256M16HA-125:A and IS43TR16256B-125KBL, W634GU6QB09I delivers 33% higher peak bandwidth and JEDEC-compliant DDR3L-2133 timing, enabling tighter system-level timing closure in next-generation embedded processors - without increasing package size or thermal envelope.

Availability

W634GU6QB09I is available at Aetrix Electronics and suitable for networking equipment, industrial control systems, and medical imaging devices requiring stable component supply, long-term lifecycle assurance, and industrial-temperature qualified memory.

Supply support for W634GU6QB09I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W634GU6QB09I belongs to Winbond's DDR3L SDRAM product line, designed specifically for high-reliability embedded applications demanding industrial temperature operation, low-voltage efficiency, and JEDEC-compliant interoperability with mainstream memory controllers.

FAQ

What is the maximum data rate supported by W634GU6QB09I?

W634GU6QB09I supports DDR3L-2133 operation at 2133 MT/s, corresponding to a minimum clock period (tCK) of 0.938 ns and CL-RCD-RP timing of 14-14-14. This speed grade is validated across the full industrial temperature range (–40°C to +95°C) and requires compliant DDR3L controller support and proper board-level signal integrity design.

Does W634GU6QB09I support backward compatibility with standard 1.5 V DDR3 systems?

Yes, W634GU6QB09I supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L mode) and is fully backward compatible with 1.5 V ±75 mV DDR3 systems. VDD and VDDQ may be supplied at 1.5 V without configuration changes, maintaining JEDEC timing compliance and functional equivalence.

How does the RESET# pin function in W634GU6QB09I?

The RESET# pin in W634GU6QB09I is an asynchronous, active-low signal that initiates power-up initialization and full internal state reset independent of clock presence. When asserted, it clears mode registers, terminates all pending operations, and prepares the device for subsequent MRS programming and normal command execution.

What package type is used for W634GU6QB09I and what are its key mechanical attributes?

W634GU6QB09I uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm thickness and 0.8 mm ball pitch. It employs window-type construction and RoHS-compliant lead-free solder balls, optimized for thermal dissipation and high-density routing in space-constrained embedded PCBs.

Can W634GU6QB09I operate in Partial Array Self-Refresh (PASR) mode, and what benefit does it provide?

Yes, W634GU6QB09I supports PASR via MR2 configuration, allowing selective self-refresh of only active memory banks. This reduces IDD6 current by up to 50% compared to full-array self-refresh, significantly lowering standby power in battery-backed or thermally constrained industrial applications.