Winbond Electronics Corporation W634GU6QB09I TR

Overview

W634GU6QB09I TR from Winbond is a 4Gb (32M × 8 banks × 16-bit) DDR3L SDRAM operating at 1.35V nominal supply, supporting DDR3L-2133 speed grade (14-14-14 CL-tRCD-tRP), with industrial temperature range (–40°C to +95°C), and packaged in 96-ball VFBGA (7.5 × 13 mm). It delivers 2133 MT/s data rates for memory subsystems in networking edge devices, industrial HMIs, and embedded controllers requiring low-voltage, high-bandwidth DRAM.

For engineers reviewing the W634GU6QB09I TR datasheet, W634GU6QB09I TR pinout, W634GU6QB09I TR application, or W634GU6QB09I TR equivalent, key selection considerations include its DDR3L-2133 timing compliance, industrial-grade thermal specification, VFBGA-96 ball mapping, ZQ calibration support, and programmable CAS Write Latency (CWL = 10 at 1066 MHz).

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent bank activation and interleaved burst access. It uses differential CK/CK# inputs for command/address latching and differential DQS/DQS# for source-synchronous data capture, with DLL alignment of DQ and DQS edges to CK.

It supports full JEDEC DDR3L features including programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, dynamic ODT (Rtt_WR), ZQ calibration, multi-purpose register (MPR) for system-level timing calibration, and asynchronous RESET# for power-up initialization and runtime reset.

Key Specifications

Pinout & Package

W634GU6QB09I TR is housed in a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.65 mm ball pitch, 7.5 mm × 13 mm footprint, and 1.0 mm maximum thickness. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD, VDDQ, VSS, VSSQ, CK/CK#, DQS/DQS#, DM, and address/control groups.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with IS43TR16256B-213JBL and MT41K256M16HA-125:E, W634GU6QB09I TR uniquely combines DDR3L-2133 timing, industrial −40°C to +95°C operation with doubled refresh, and identical 7.5 × 13 mm VFBGA-96 footprint-enabling drop-in replacement where both speed and thermal robustness are required.

Availability

W634GU6QB09I TR is available at Aetrix Electronics and suitable for industrial HMI, network edge buffering, medical imaging front-ends, and ruggedized IoT gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W634GU6QB09I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W634GU6QB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for embedded systems demanding low-voltage operation, extended temperature reliability, and JEDEC-compliant interoperability with mainstream SoC DDR controllers.

FAQ

What is the maximum data rate supported by W634GU6QB09I TR?

W634GU6QB09I TR supports DDR3L-2133 operation at 1066 MHz clock frequency, delivering 2133 MT/s transfer rate. This is confirmed by its -09I speed grade designation, CL-tRCD-tRP = 14-14-14 timing, and validated AC parameters in the official datasheet revision A01. The device achieves this rate under VDD/VDDQ = 1.283–1.45 V and industrial temperature conditions (–40°C to +95°C).

Does W634GU6QB09I TR support backward compatibility with standard 1.5 V DDR3 systems?

Yes, W634GU6QB09I TR is fully backward compatible with 1.5 V DDR3 systems. Its VDD/VDDQ operating range extends to 1.5 V ± 0.075 V (1.425–1.575 V), and it meets all JEDEC DDR3 timing and signaling requirements at that voltage. However, when operated at 1.5 V, it retains DDR3L-2133 timing specs but does not enter DDR3-only modes - all features (e.g., CWL, PASR, ZQ) remain functional.

What package type and dimensions does W634GU6QB09I TR use?

W634GU6QB09I TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 1.0 mm maximum height and 0.65 mm ball pitch. This matches JEDEC MO-270AC standard and is identical to the footprint used by Winbond's W632GU6SB and compatible with common DDR3L layout guidelines for signal integrity and thermal dissipation.

How does the ZQ calibration function work on W634GU6QB09I TR?

W634GU6QB09I TR performs ZQ calibration by referencing an external 240 Ω ±1% resistor connected between the ZQ pin and VSS. During calibration, internal current sources adjust output driver strength and ODT impedances (RTT_NOM, RTT_WR) to match the reference, ensuring ±10% accuracy across voltage and temperature. Calibration is initiated via ZQCL command and recommended at power-up and after significant temperature shifts.

Is W634GU6QB09I TR pin-compatible with other Winbond DDR3L SDRAMs like W632GU6SB?

No, W634GU6QB09I TR is not pin-compatible with W632GU6SB. Although both use 96-ball VFBGA packages, W632GU6SB is a 2Gb (16M × 8 × 16) device with different ball assignments - notably distinct placement of VDDQ, VSSQ, and DQ groupings. Pin compatibility must be verified per JEDEC ball map; W634GU6QB09I TR's pinout is defined in Section 5 ("Ball Configuration") of its datasheet revision A01.