Winbond Electronics Corporation W634GU6QB-09 TR

Overview

W634GU6QB-09 TR from Winbond is a 4Gb (32M × 8 banks × 16-bit) DDR3L SDRAM operating at 1.35V nominal supply, supporting DDR3L-2133 speed grade (14-14-14 CL-tRCD-tRP), 1066 MHz clock frequency, and industrial temperature range (0°C to 95°C). It delivers high-bandwidth memory for embedded computing, networking processors, and FPGA-based systems requiring low-voltage, high-density DRAM with ZQ calibration and dynamic ODT.

For engineers reviewing the W634GU6QB-09 TR datasheet, W634GU6QB-09 TR pinout, W634GU6QB-09 TR application, or W634GU6QB-09 TR equivalent, key selection factors include its DDR3L-2133 timing compliance, VFBGA-96 package, programmable CAS Write Latency (CWL = 5–10), on-die termination (RTT_NOM/RTT_WR), and support for write leveling and MPR-based system calibration.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent access and high throughput. Its DLL-aligned DQS/DQ timing, posted CAS with additive latency (AL = 0, CL−1, CL−2), and bi-directional differential strobes ensure robust source-synchronous data transfer at up to 2133 MT/s.

It supports full JEDEC DDR3L features including ZQ calibration for output driver and ODT impedance tuning, asynchronous RESET# for power-up initialization, and multiple power-down modes (precharge/active) with self-refresh, PASR, and ASR. The device accepts commands on every CK rising edge and uses differential CK/CK# and DQS/DQS# pairs for clock and strobe domains.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and lead-free RoHS-compliant construction. Ball map conforms to JEDEC MO-275EA standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W634GU6QB-09 TR provides 16× higher density and 33% higher data rate, enabling single-rank 512 MB configurations at DDR3L-2133-critical for bandwidth-constrained FPGA and networking applications where memory channel count is fixed.

Availability

W634GU6QB-09 TR is available at Aetrix Electronics and suitable for networking equipment, FPGA acceleration platforms, industrial HMI controllers, and embedded vision systems requiring stable component supply, long-lifecycle support, and consistent DDR3L-2133 performance.

Supply support for W634GU6QB-09 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, communications, and consumer markets.

The W634GU6QB-09 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for power-efficient, high-density memory subsystems in space-constrained embedded systems operating across extended temperature ranges.

FAQ

What is the maximum data rate supported by the W634GU6QB-09 TR?

The W634GU6QB-09 TR supports DDR3L-2133 operation at 2133 MT/s, corresponding to a 1066 MHz differential clock frequency (tCK = 0.938 ns minimum). This speed grade is validated under JEDEC conditions with CL-tRCD-tRP = 14-14-14 and VDD/VDDQ = 1.35 V ± 6.3%. The W634GU6QB-09 TR achieves this rate using DLL-aligned DQS/DQ timing and 8-bit prefetch architecture.

Does the W634GU6QB-09 TR support backward compatibility with standard DDR3 (1.5 V) systems?

Yes, the W634GU6QB-09 TR supports dual-voltage operation: it functions at 1.35 V for DDR3L compliance and is fully backward compatible with 1.5 V ± 0.075 V DDR3 systems. VDD and VDDQ may be driven at 1.5 V without hardware modification, though AC timing parameters must be revalidated per JEDEC JESD79-3F Annex C for 1.5 V operation. The W634GU6QB-09 TR retains all DDR3L features-including ZQ calibration and dynamic ODT-at either voltage.

How does write leveling work on the W634GU6QB-09 TR, and what is its purpose?

Write leveling on the W634GU6QB-09 TR calibrates DQS-to-CK skew at system startup by adjusting DQS delay until the memory controller detects valid DQS edges. It uses the MPR to return a known bit pattern during training, allowing automatic compensation for PCB trace length mismatches. This ensures reliable write capture at 2133 MT/s without manual layout tuning. The W634GU6QB-09 TR implements this per-JEDEC DDR3L specification with dedicated MRS entry and exit sequences.

What power-saving features are implemented in the W634GU6QB-09 TR?

The W634GU6QB-09 TR integrates Precharge Power-Down, Active Power-Down, Auto Self-Refresh (ASR), and Partial Array Self-Refresh (PASR). PASR reduces self-refresh current by up to 40% by refreshing only active banks, while ASR dynamically adjusts refresh rate based on junction temperature. IDD6 is rated at ≤15 mA in normal temperature self-refresh. These features make the W634GU6QB-09 TR suitable for thermally constrained industrial and embedded applications where continuous low-power operation is critical.

Is the W634GU6QB-09 TR pin-compatible with other Winbond DDR3L SDRAMs in the same VFBGA-96 package?

Yes, the W634GU6QB-09 TR shares identical ball mapping, power sequencing, and command protocol with other Winbond DDR3L SDRAMs in the VFBGA-96 package (e.g., W632GU6SB series), enabling drop-in replacement within the same density and speed family. However, migration across speed grades (e.g., -09 to -12) or densities (e.g., 4Gb to 2Gb) requires verification of timing parameter compatibility and mode register programming-specifically CL, CWL, and tREFI settings-as defined in the W634GU6QB-09 TR datasheet.