Winbond Electronics Corporation W634GU6QB-11

Overview

W634GU6QB-11 from Winbond Electronics is a 4 Gb DDR3L SDRAM organized as 32M × 8 banks × 16-bit, operating at 1866 MT/s (DDR3L-1866, CL=13), with 1.35 V nominal supply, 8 internal banks, and support for programmable CAS Write Latency (CWL=7) in embedded computing and industrial control memory subsystems.

For engineers reviewing the W634GU6QB-11 datasheet, W634GU6QB-11 pinout, W634GU6QB-11 application, or W634GU6QB-11 equivalent, key selection criteria include its DDR3L-1866 speed bin (13-13-13), industrial-grade temperature range (0°C to 95°C), VFBGA-96 package, ZQ calibration capability, and dynamic on-die termination (Rtt_WR) for high-signal-integrity memory channel design.

Technical Context

This DDR3L SDRAM implements a double-data-rate architecture with 8-bit prefetch, differential CK/CK# clock inputs synchronized at the cross-point, and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and DLL-based DQ–DQS alignment for timing closure.

The device features asynchronous RESET# for power-up initialization, programmable mode registers (MR0–MR3) for CAS latency, CWL, ODT settings, PASR, and ASR, plus system-level calibration via write leveling and Multi-Purpose Register (MPR) readout of predefined timing bit patterns.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and window-type substrate optimized for signal integrity and thermal dissipation in dense PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W634GU6QB-11 delivers superior thermal efficiency via 1.35 V operation and advanced calibration features (write leveling, MPR), making it optimal for thermally constrained, high-reliability applications requiring minimal timing margin risk.

Availability

W634GU6QB-11 is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging workstations, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W634GU6QB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W634GU6QB-11 belongs to Winbond's DDR3L SDRAM product line, engineered for low-voltage, high-reliability embedded systems demanding extended temperature operation, robust signal integrity, and system-level timing calibration capabilities.

FAQ

What is the maximum data rate supported by the W634GU6QB-11?

The W634GU6QB-11 supports a maximum data rate of 1866 MT/s, corresponding to the DDR3L-1866 speed bin with tCK = 1.07 ns minimum clock period. This is validated under 0°C to 95°C case temperature and 1.283 V to 1.45 V VDD/VDDQ supply conditions, per JEDEC JESD79-3F specification.

Does the W634GU6QB-11 support backward compatibility with standard DDR3 (1.5 V) systems?

Yes, the W634GU6QB-11 is backward compatible with 1.5 V DDR3 systems. It operates within VDD/VDDQ = 1.5 V ± 0.075 V and maintains full JEDEC AC/DC specifications at 0°C to 85°C, allowing drop-in replacement in existing DDR3 designs without redesigning power delivery networks.

How does the W634GU6QB-11 implement dynamic on-die termination (ODT)?

The W634GU6QB-11 implements dynamic ODT (Rtt_WR) through MR2 bit[5:4], enabling on-the-fly activation of termination resistors only during write operations. This reduces noise on read paths and lowers standby power versus static ODT, with selectable impedances (40 Ω, 60 Ω, 120 Ω) configured via MR1.

What calibration features are available on the W634GU6QB-11 for high-speed memory interface tuning?

The W634GU6QB-11 provides three hardware calibration features: ZQ calibration (for output driver and ODT impedance correction), write leveling (for DQS–CK phase alignment), and Multi-Purpose Register (MPR) readout (for predefined timing bit pattern verification). These collectively reduce system-level timing margin uncertainty below 100 ps.

Is the W634GU6QB-11 suitable for applications requiring partial array self-refresh (PASR)?

Yes, the W634GU6QB-11 supports Partial Array Self Refresh (PASR) via MR2 bits[2:0], allowing selective refresh of ¼, ½, or full memory array. This feature reduces IDD6 current by up to 50% in applications like medical imaging or ATE where only subsets of memory remain active during idle periods.