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Winbond Electronics Corporation W634GU6QB11I
- Part No.:
- W634GU6QB11I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W634GU6QB11I.pdf
- Description:
- IC DRAM 4GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,360
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Product details
Overview
W634GU6QB11I from Winbond Electronics is a 4Gb (32M × 8 banks × 16-bit) DDR3L SDRAM operating at DDR3L-1866 speed (13-13-13 CL-tRCD-tRP), with 1.35V nominal supply, industrial temperature range (–40°C to +95°C), and VFBGA-96 package. It serves as main memory in embedded computing, network edge devices, and industrial controllers requiring low-voltage, high-bandwidth synchronous DRAM.
For engineers reviewing the W634GU6QB11I datasheet, W634GU6QB11I pinout, W634GU6QB11I application, or W634GU6QB11I equivalent, key selection factors include its DDR3L-1866 timing compliance, programmable CAS Write Latency (CWL = 5–9), on-die termination (RTT_NOM/RTT_WR), ZQ calibration support, and industrial-grade thermal reliability.
Technical Context
This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, differential CK/CK# clocking, and bi-directional DQS/DQS# strobes aligned to data edges during reads and centers during writes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization in burst-intensive systems.
The device integrates asynchronous RESET#, dynamic ODT for write termination, multi-purpose register (MPR) for system-level timing calibration, and write leveling for per-lane skew compensation. Its internal refresh engine supports Auto Self-Refresh (ASR), Partial Array Self-Refresh (PASR), and temperature-compensated tREFI intervals up to 3.9 µs at extended case temperatures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Gb (32M words × 8 banks × 16 bits) |
| Data Rate | 1866 MT/s (DDR3L-1866, 933 MHz clock) |
| CAS Latency | CL = 5–13 (supports 13-13-13 timing bin) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V nominal); backward compatible to 1.5 V ± 0.075 V |
| Operating Temperature | –40°C ≤ TCASE ≤ +95°C (industrial grade) |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant lead-free) |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C) with doubled auto-refresh rate |
| Power Consumption | IDD0 ≤ 53 mA (active one bank), IDD6 ≤ 15 mA (self-refresh) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and window-type substrate construction optimized for signal integrity and thermal dissipation in space-constrained industrial PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs for bank and page access; multiplexed with BA0–BA2 for bank select |
| BA0–BA2 | Bank Address | Selects one of eight internal banks; latched with A0–A14 on ACT command |
| CK, CK# | Differential Clock | Edge-triggered reference for all command, address, and data transfers; inputs sampled at crosspoint |
| CS#, RAS#, CAS#, WE# | Command Signals | Active-low chip select and row/column/write enable; define command type on each CK rising edge |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; double-data-rate transfers synchronized to DQS/DQS# |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe pair; edge-aligned with read data, center-aligned with write data |
| DM0–DM1 | Data Mask | Per-byte write mask for DQ0–7 and DQ8–15; active-high to inhibit corresponding byte writes |
| RESET# | Asynchronous Reset | Hardware-initiated power-up initialization and functional reset; does not require stable clocks |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR termination resistors on DQ/DQS/DM lines |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω ±1 % resistor to ground for output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL | CAS Write Latency configurable per frequency (CWL = 5–9), enabling precise write timing alignment across speed bins |
| Write Leveling | Per-lane DQS-to-clock skew calibration via MPR-read pattern and controller-adjusted delay taps |
| Dynamic ODT (Rtt_WR) | On-the-fly ODT activation during WRITE bursts only, reducing standby power and improving signal integrity |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor to maintain ±10 % output driver and ODT impedance accuracy over voltage/temperature |
| Partial Array Self-Refresh (PASR) | Configurable self-refresh of 1/2, 1/4, or 1/8 of memory array, cutting IDD6 current by up to 75 % in partial-usage modes |
| Multi-Purpose Register (MPR) | Predefined 128-bit calibration pattern accessible via MRS command, used for read-leveling and system timing validation |
Applications
| Industrial PLC Memory | Network Edge Router Buffer |
|---|---|
Use Scenario: Real-time logic execution and I/O mapping in programmable logic controllers with deterministic response requirements. IC Role / Device Role / Timing Role: Primary working memory storing program code, tag tables, and process data buffers; accessed via DDR3L-1866 interface with strict tRCD/tRP timing. Use Value: Industrial temperature rating (–40°C to +95°C) ensures uninterrupted operation in uncontrolled cabinet environments; low IDD6 enables fanless designs. | Use Scenario: Packet buffering and forwarding table storage in Layer 3 edge routers handling 1–10 Gbps traffic. IC Role / Device Role / Timing Role: High-bandwidth packet buffer supporting concurrent read/write bursts at 1866 MT/s; interfaces with MAC/switch fabric via 16-bit DDR3L bus. Use Value: Dynamic ODT and write leveling maintain signal integrity across 10+ inch PCB traces; PASR reduces power during low-traffic periods. |
| Medical Imaging Controller | Automated Test Equipment (ATE) |
Use Scenario: Frame buffering and real-time image processing in portable ultrasound and digital X-ray systems. IC Role / Device Role / Timing Role: Dual-role memory: stores raw sensor frames (write-heavy) and processed display buffers (read-heavy); uses interleaved burst ordering. Use Value: 1.35 V operation lowers thermal load near sensitive analog front-ends; MPR-based read-leveling ensures reliable high-speed data capture. | Use Scenario: Pattern generation and result capture in high-speed semiconductor test platforms requiring deterministic memory access. IC Role / Device Role / Timing Role: Timing-critical waveform memory synchronized to tester clock; supports burst reads/writes with <13.91 ns tRCD at DDR3L-1866. Use Value: Programmable CL/CWL and AL settings allow fine-grained timing adjustment to match tester channel skew; RESET# enables fast reinitialization between test sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M16HA-125:E | Same density (4Gb), 16-bit bus, VFBGA-96; DDR3L-1600 (125 MHz max), CL=11, tRCD=13.75 ns; lower speed grade, no 105°C option | Targeted at cost-sensitive consumer and compute applications; lacks industrial +95°C rating and PASR | Select when DDR3L-1600 bandwidth suffices and full DDR3L-1866 timing is not required. |
| IS43TR16256B-125KBL | 4Gb, 16-bit, VFBGA-96; DDR3L-1600 (125 MHz), CL=11, tRCD=13.75 ns; industrial –40°C to +95°C; includes ASR but no PASR or write leveling | Designed for automotive infotainment and ADAS; qualified to AEC-Q200, no MPR or ZQ calibration | Choose for automotive-qualified memory where AEC-Q200 compliance is mandatory and DDR3L-1866 speed is unnecessary. |
Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W634GU6QB11I delivers higher bandwidth (1866 MT/s vs. 1600 MT/s), finer timing control (CWL programmability, write leveling), and advanced power management (PASR, dynamic ODT), making it optimal for thermally constrained industrial systems demanding both performance and reliability.
Availability
W634GU6QB11I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.
Supply support for W634GU6QB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W634GU6QB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems requiring extended temperature operation, low-voltage efficiency, and JEDEC-compliant reliability under continuous duty cycles.
FAQ
What is the maximum supported data rate for W634GU6QB11I?
The W634GU6QB11I supports DDR3L-1866 operation at 1866 MT/s (933 MHz clock frequency), compliant with the 13-13-13 timing bin (tCL/tRCD/tRP). This is confirmed in the order information table and electrical characteristics section of the official datasheet revision A01. The W634GU6QB11I achieves this rate with CL = 13, CWL = 9, and AL = 0 under industrial temperature conditions.
Does W634GU6QB11I support backward compatibility with standard 1.5V DDR3 systems?
Yes, the W634GU6QB11I supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L mode) and is fully backward compatible with 1.5 V ± 0.075 V DDR3 systems. Section 11 of the datasheet explicitly states VDD/VDDQ voltage switching capability and confirms functional equivalence in command, timing, and electrical behavior at both voltages.
What package type and ball count does W634GU6QB11I use?
The W634GU6QB11I uses a VFBGA-96 package - a 7.5 mm × 13 mm, 1.0 mm thick window-type ball grid array with 96 solder balls arranged in a 9 × 12 configuration. This is documented in Section 12 (Package Specification) and the ball configuration diagram (Section 5) of the datasheet.
How does write leveling work on W634GU6QB11I?
Write leveling on the W634GU6QB11I uses the Multi-Purpose Register (MPR) to output a predefined 128-bit pattern. The memory controller adjusts DQS delay until the pattern is correctly captured, calibrating per-lane DQS-to-CK skew. This procedure is defined in Section 8.9 and requires MPR read commands followed by controller-side phase adjustment - a feature confirmed for the W634GU6QB11I in the functional description.
Is W634GU6QB11I qualified for industrial temperature operation?
Yes, the W634GU6QB11I is rated for industrial temperature operation from –40°C to +95°C (TCASE), as specified in the Order Information table (Section 3) and confirmed in Section 10.2 (Operating Temperature Condition). This qualification includes full AC/DC parameter compliance across the entire range, not just derated operation.
W634GU6QB11I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 4Gbit
- Memory Organization:
- 256M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W634GU6QB11I FAQ
1.How can I place an order for W634GU6QB11I through Aetrix?
Please submit a Request for Quotation (RFQ) for W634GU6QB11I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W634GU6QB11I reliable?
The price and inventory of W634GU6QB11I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W634GU6QB11I is usually 5 days.
3.What payment methods are accepted for W634GU6QB11I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W634GU6QB11I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W634GU6QB11I?
W634GU6QB11I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W634GU6QB11I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W634GU6QB11I?
For technical support, including W634GU6QB11I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W634GU6QB11I requirements.
6.How does Aetrix verify that W634GU6QB11I is sourced from the original manufacturer or authorized distributors?
All W634GU6QB11I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W634GU6QB11I meets industry standards.
7.What is the process for return or replacement of W634GU6QB11I?
All W634GU6QB11I units undergo pre-shipment inspection (PSI). If there is an issue with W634GU6QB11I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W634GU6QB11I part is unused and in its original packaging.
Return procedure for W634GU6QB11I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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