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Winbond Electronics Corporation W634GU6QB11I TR
- Part No.:
- W634GU6QB11I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W634GU6QB11I TR.pdf
- Description:
- IC DRAM 4GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W634GU6QB11I TR from Winbond Electronics is a 4Gb (32M × 8 banks × 16-bit) DDR3L SDRAM operating at 1.35V nominal supply, supporting DDR3L-1866 speed grade (13-13-13 CL/RCD/RP), with industrial temperature range (−40°C to +95°C), and packaged in 96-ball VFBGA (7.5 × 13 mm). It delivers 1866 MT/s data rates for embedded computing, networking, and industrial control memory subsystems.
For engineers reviewing the W634GU6QB11I TR datasheet, W634GU6QB11I TR pinout, W634GU6QB11I TR application, or W634GU6QB11I TR equivalent, key selection criteria include CAS latency support (CL=5–13), programmable CWL (5–9), ZQ calibration capability, on-die termination (RTT_NOM/RTT_WR), and industrial-grade thermal reliability across DDR3L voltage compliance.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent bank activation and high-bandwidth interleaved access. Its DLL-synchronized DQS/DQ timing ensures precise source-synchronous read/write strobe alignment, while posted CAS with additive latency (AL = 0, CL−1, CL−2) optimizes command bus efficiency.
The device supports full JEDEC-compliant power management: Auto Self-Refresh (ASR), Partial Array Self-Refresh (PASR), Precharge Power-Down, and Active Power-Down modes. It features asynchronous RESET# for deterministic initialization and write leveling for system-level timing calibration-critical for robust signal integrity in high-speed PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Gb (32M words × 8 banks × 16 bits); enables 512 MB of 16-bit wide memory per chip |
| Data Rate | 1866 MT/s (DDR3L-1866); supports 933 MHz clock frequency with tCK = 1.07 ns min |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V; compatible with 1.35 V DDR3L systems and backward-compatible with 1.5 V DDR3 |
| CAS Latency | CL = 5 to 13; configurable via MR0 to match controller timing budgets and clock frequency |
| CAS Write Latency | CWL = 5 to 9; independently programmable via MR2 to align write strobe capture window |
| Operating Temperature | −40°C to +95°C (industrial grade); validated for continuous operation without derating |
| Package | VFBGA-96 (7.5 × 13 mm, 1.0 mm height); RoHS-compliant, lead-free, window-type BGA for thermal and mechanical reliability |
Pinout & Package
VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch; RoHS-compliant, lead-free construction optimized for thermal dissipation and board-level reliability in industrial environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs for bank and page access; multiplexed with BA[2:0] for bank selection |
| BA[2:0] | Bank Address | Selects one of eight internal banks; latched with A0–A14 during ACTIVATE command |
| CK, CK# | Differential Clock | Edge-triggered reference for all command/address latching; input sampled at cross-point |
| CS#, RAS#, CAS#, WE# | Command Inputs | Active-low command decode signals; define ACT, READ, WRITE, PRE, REF, MRS operations |
| RESET# | Asynchronous Reset | Hardware-initiated power-up initialization and functional reset; independent of clock state |
| DQ[15:0] | Data I/O | 16-bit bidirectional data bus; double-data-rate transfers synchronized to DQS/DQS# |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe pair; center-aligned with write data, edge-aligned with read data |
| DM[1:0] | Data Mask | Byte-level write masking for DQ[7:0] and DQ[15:8]; suppresses write data per byte lane |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR termination resistors on DQ/DQS/DM lines |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω ±1 % resistor to ground for output driver and ODT impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL = 5–9 per frequency bin; enables precise write strobe-to-clock alignment for stable DDR3L-1866 operation |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor; maintains ±10 % output driver and ODT impedance accuracy over voltage/temperature |
| Dynamic On-Die Termination (Rtt_WR) | Configurable termination during writes only; improves signal integrity on shared DQ buses without affecting read receiver sensitivity |
| Write Leveling Support | Hardware-assisted timing calibration mode; allows controller to adjust DQS launch delay relative to CK to compensate for board skew |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern accessible via MRS; used for system-level timing margin verification and calibration validation |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic execution with burst-intensive data logging and firmware updates in programmable logic controllers. IC Role / Device Role / Timing Role: Primary working memory providing low-latency, high-throughput access to instruction and data caches under −40°C to +95°C ambient conditions. Use Value: DDR3L-1866 speed grade and industrial temperature rating ensure consistent 1866 MT/s throughput and reliable refresh behavior without throttling in uncontrolled cabinet environments. |
Use Scenario: High-port-count Layer 2/3 Ethernet switches requiring fast packet buffering, header parsing, and forwarding table lookups. IC Role / Device Role / Timing Role: Shared packet buffer memory interfaced to multi-lane SerDes PHYs and traffic manager ASICs via 16-bit DDR3L bus. Use Value: Programmable CWL and write leveling reduce setup/hold violations across 10+ inch trace lengths, enabling stable 933 MHz clock operation in dense switch PCBs. |
| Medical Imaging Data Acquisition | Automotive ADAS Domain Controller |
Use Scenario: Ultrasound and MRI front-end systems capturing raw sensor data at multi-Gbps rates before compression and display rendering. IC Role / Device Role / Timing Role: High-bandwidth frame buffer storing real-time ADC samples prior to GPU-accelerated processing pipelines. Use Value: 8-bank concurrency and 2K-byte page size maximize sequential burst efficiency during large-block sensor data transfers, reducing average access latency by >30% vs. 4-bank alternatives. |
Use Scenario: Centralized ADAS domain controllers fusing camera, radar, and ultrasonic inputs for real-time path planning and actuator control. IC Role / Device Role / Timing Role: Safety-critical working memory for autonomous driving software stacks, operating under AEC-Q200-referenced thermal stress. Use Value: Asynchronous RESET# and PASR support rapid cold-boot recovery and selective self-refresh of safety-critical memory regions during low-power states. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M16HA-125:A | Same density (4Gb), 96-ball VFBGA, DDR3L-1600 (11-11-11), CL=11 max, operates at 1.28–1.45 V | Limited to 1600 MT/s; lacks support for DDR3L-1866 timing and CWL=9; lower peak bandwidth | Choose when system clock is capped at 800 MHz and cost sensitivity outweighs performance headroom |
| IS43TR16256B-125KBL | 4Gb DDR3L, 96-ball VFBGA, DDR3L-1866 (13-13-13), CL=5–13, but rated only to +85°C (not industrial +95°C) | No extended temperature validation above 85°C; requires derating or additional thermal margining for industrial use | Acceptable for commercial-extended applications where ambient stays ≤85°C; avoid in sealed enclosures or high-power chassis |
Compared with MT41K256M16HA-125:A and IS43TR16256B-125KBL, the W634GU6QB11I TR uniquely combines DDR3L-1866 performance, full industrial −40°C to +95°C qualification, and hardware write leveling-making it optimal for thermally demanding, high-throughput embedded systems where timing margin and reliability are non-negotiable.
Availability
W634GU6QB11I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.
Supply support for W634GU6QB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W634GU6QB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for high-reliability embedded applications demanding extended temperature operation, JEDEC compliance, and robust power management features.
FAQ
What is the maximum supported CAS latency for W634GU6QB11I TR at DDR3L-1866 speed?
The W634GU6QB11I TR supports CAS Latency (CL) values from 5 to 13 when operating at DDR3L-1866 speed (13-13-13 timing bin). CL=13 is fully validated per JEDEC specification for this speed grade and enables relaxed timing margins in electrically challenging layouts-critical for stable operation in industrial backplanes and multi-layer PCBs where signal integrity is constrained.
Does W634GU6QB11I TR support both DDR3L and standard DDR3 voltage levels?
Yes, the W634GU6QB11I TR is backward compatible with 1.5 V DDR3 systems while natively optimized for 1.35 V DDR3L operation. Its VDD/VDDQ supply range is specified from 1.283 V to 1.45 V for DDR3L mode and extends to 1.5 V ± 0.075 V for DDR3 compatibility-enabling seamless migration from legacy DDR3 designs without hardware changes to the memory interface.
How does the ZQ calibration function work on W634GU6QB11I TR?
The W634GU6QB11I TR uses its dedicated ZQ pin to connect to an external 240 Ω ±1 % precision resistor to ground. During ZQ calibration commands, the device measures this reference to tune internal output driver strength and on-die termination (ODT) impedances-ensuring ±10 % accuracy across voltage and temperature. This calibration must be performed after power-up and periodically during operation to maintain signal integrity at 1866 MT/s.
Is write leveling supported on W634GU6QB11I TR, and how is it implemented?
Yes, write leveling is fully supported on the W634GU6QB11I TR. It operates by placing the DRAM into a special mode where the controller adjusts DQS launch timing relative to CK while monitoring DQ feedback. The W634GU6QB11I TR responds with a fixed MPR pattern, allowing the controller to determine optimal DQS delay-essential for mitigating board-level skew in high-speed, multi-drop DDR3L interfaces.
What power-down modes are available on W634GU6QB11I TR, and when should each be used?
The W634GU6QB11I TR supports Precharge Power-Down (PPD), Active Power-Down (APD), Auto Self-Refresh (ASR), and Partial Array Self-Refresh (PASR). PPD is ideal for short idle periods with fast wake-up (<10 ns); APD reduces power during active bank idleness; ASR automatically doubles refresh rate above 85°C; PASR selectively refreshes only active memory regions-extending battery life in portable industrial devices without sacrificing data retention.
W634GU6QB11I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 4Gbit
- Memory Organization:
- 256M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W634GU6QB11I TR FAQ
1.How can I place an order for W634GU6QB11I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W634GU6QB11I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W634GU6QB11I TR reliable?
The price and inventory of W634GU6QB11I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W634GU6QB11I TR is usually 5 days.
3.What payment methods are accepted for W634GU6QB11I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W634GU6QB11I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W634GU6QB11I TR?
W634GU6QB11I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W634GU6QB11I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W634GU6QB11I TR?
For technical support, including W634GU6QB11I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W634GU6QB11I TR requirements.
6.How does Aetrix verify that W634GU6QB11I TR is sourced from the original manufacturer or authorized distributors?
All W634GU6QB11I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W634GU6QB11I TR meets industry standards.
7.What is the process for return or replacement of W634GU6QB11I TR?
All W634GU6QB11I TR units undergo pre-shipment inspection (PSI). If there is an issue with W634GU6QB11I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W634GU6QB11I TR part is unused and in its original packaging.
Return procedure for W634GU6QB11I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W634GU6QB11I TR Tags
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