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Winbond Electronics Corporation W634GU6QB-11 TR
- Part No.:
- W634GU6QB-11 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W634GU6QB-11 TR.pdf
- Description:
- IC DRAM 4GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W634GU6QB-11 TR from Winbond is a 4Gb (32M × 8 banks × 16-bit) DDR3L SDRAM operating at 1866 MT/s with CL=13, tRCD=tRP=13 ns, and 1.35V nominal VDD/VDDQ supply. It supports eight internal banks, 8-bit prefetch, programmable CAS Write Latency (CWL=7), and on-die termination for high-speed memory subsystems in industrial embedded controllers and networking edge devices.
For engineers reviewing the W634GU6QB-11 TR datasheet, W634GU6QB-11 TR pinout, W634GU6QB-11 TR application, or W634GU6QB-11 TR equivalent, key selection considerations include its DDR3L-1866 speed bin (-11 grade), industrial temperature range (0°C to 95°C), VFBGA-96 package, and support for ZQ calibration, write leveling, and dynamic ODT-critical for signal integrity in dense PCB layouts.
Technical Context
This DDR3L SDRAM implements a double-data-rate architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes center-aligned on writes and edge-aligned on reads. Its DLL aligns DQ transitions to clock edges, enabling stable 933 MHz clock operation (1866 MT/s).
The device supports full JEDEC-compliant command decoding-including ACTIVE, READ, WRITE, PRECHARGE, REFRESH, and SELF-REFRESH-with programmable mode registers (MR0–MR3) controlling CAS latency, additive latency, CWL, PASR, ASR, and dynamic ODT activation. Reset is asynchronous via dedicated RESET# pin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Gb (32M words × 8 banks × 16 bits); enables 512 MB of 16-bit wide memory per chip |
| Data Rate | 1866 MT/s (DDR3L-1866, -11 speed grade); supports 933 MHz differential clock input |
| CAS Latency | CL = 13 (tAA = 13.91 ns min); determines minimum read access delay after column address |
| tRCD / tRP | 13 ns each; defines minimum row-to-column and precharge delays critical for bank switching timing |
| VDD / VDDQ | 1.35 V nominal (1.283–1.45 V range); lower voltage than standard DDR3 reduces power by ~20% |
| Operating Temp | 0°C ≤ TCASE ≤ 95°C; validated for industrial ambient without derating |
| Package | VFBGA-96 (7.5 × 13 mm, 1.0 mm height); RoHS-compliant, lead-free window BGA for fine-pitch routing |
| Refresh Interval | 7.8 μs at ≤85°C; doubles to 3.9 μs above 85°C per JEDEC for thermal reliability |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball layout follows JEDEC MO-275AC standard for DDR3L SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column/bank address during ACT/READ/WRITE; multiplexed with BA0–BA2 for bank select |
| BA0–BA2 | Bank Address | Selects one of eight internal banks; latched with A0–A14 on ACT command |
| CK / CK# | Differential Clock | Edge-triggered command/address sampling; rising CK + falling CK# defines latch point |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; source-synchronous with DQS/DQS#; supports DM masking |
| DQS / DQS# | Differential Strobe | Center-aligned with write data, edge-aligned with read data; used for timing capture at receiver |
| DM0–DM1 | Data Mask | Byte-level write masking for DQ0–7 (DM0) and DQ8–15 (DM1); active-high per JEDEC |
| RESET# | Asynchronous Reset | Active-low initialization trigger; initiates power-up sequence and clears internal state |
| ODT | On-Die Termination Control | Dynamic impedance enable/disable; selects RTT_NOM/RTT_WR values per MR1/MR2 settings |
| ZQ | Calibration Reference | Connects to 240 Ω ±1% external resistor to ground; calibrates output driver and ODT impedances |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL | CWL = 7 at DDR3L-1866; sets write latency (WL = AL + CWL) for precise timing closure in high-speed PHYs |
| Dynamic ODT (Rtt_WR) | Enables on-the-fly ODT activation during WRITE bursts only; improves signal integrity without affecting read paths |
| Write Leveling Support | Hardware-assisted DQS-to-CK skew calibration; compensates for board trace mismatch in multi-drop DDR topologies |
| Multi-Purpose Register (MPR) | Predefined pattern readout (0x0000_0000) for system-level timing margin validation and eye diagram analysis |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor; maintains ±10% output impedance accuracy across voltage/temperature |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by refreshing only active banks; extends battery life in low-power modes |
Applications
| Industrial PLC Memory Buffer | Network Edge Router Frame Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic execution with burst data logging to local storage. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7-based controller; provides 16-bit wide interface with sub-14 ns tRCD for fast register-to-memory transfers. Use Value: DDR3L-1866 bandwidth (≈3.0 GB/s) sustains concurrent EtherCAT I/O processing and firmware update staging without CPU stalling. | Use Scenario: Packet buffering and header inspection in 1Gbps Ethernet aggregation nodes. IC Role / Device Role / Timing Role: Dual-rank frame buffer interfaced to FPGA-based MAC layer; uses dynamic ODT and write leveling to maintain signal integrity across 8-layer PCB traces. Use Value: 13 ns tRP/tRCD enables <100 ns average packet enqueue/dequeue latency under 70% line-rate traffic load. |
| Medical Imaging Display Controller | Automotive ADAS Camera Preprocessor |
Use Scenario: High-resolution DICOM image rendering with real-time gamma correction and window-level adjustment. IC Role / Device Role / Timing Role: Graphics memory for display pipeline; operates in interleaved burst mode with CL=13 to feed 1920×1080@60Hz RGB data streams. Use Value: 8-bank concurrency allows simultaneous fetch of pixel tiles and metadata, eliminating display tearing during rapid contrast transitions. | Use Scenario: Raw sensor data buffering prior to ISP pipeline in 8MP automotive camera modules. IC Role / Device Role / Timing Role: Low-latency frame store for MIPI CSI-2 to AXI bridge; leverages PASR to reduce idle power during scene static periods. Use Value: 1.35V operation cuts memory subsystem power by 18% vs. DDR3, meeting ASIL-B thermal envelope limits at 95°C case temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M16HA-125:E | Same density (4Gb), 96-ball VFBGA, but DDR3L-1600 (-125 speed grade); CL=11, tRCD=tRP=11 ns | Lower bandwidth (2.56 GB/s vs. 3.0 GB/s); suitable where 1866 MT/s timing margin is not required | Select if system clock is limited to 800 MHz or thermal budget restricts higher-speed operation |
| IS43TR16256B-125KBL | 4Gb DDR3L, 96-ball VFBGA, DDR3L-1600 (-125); supports extended temp (-40°C to 105°C) but no PASR or MPR | Lacks write leveling and MPR; requires external calibration; wider temp range suits harsher environments | Choose when industrial-plus temperature range is mandatory and system-level timing calibration is handled externally |
Compared with MT41K256M16HA-125:E and IS43TR16256B-125KBL, the W634GU6QB-11 TR delivers higher bandwidth and integrated calibration features (write leveling, MPR, ZQ), making it optimal for timing-critical, high-throughput embedded systems where board-level signal integrity optimization is constrained.
Availability
W634GU6QB-11 TR is available at Aetrix Electronics and suitable for industrial PLCs, network edge routers, medical imaging displays, and automotive ADAS camera preprocessors requiring stable component supply across extended lifecycle programs.
Supply support for W634GU6QB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W634GU6QB-11 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for power-constrained, thermally demanding embedded applications requiring JEDEC-compliant high-speed memory with advanced calibration and low-voltage operation.
FAQ
What is the maximum operating frequency supported by the W634GU6QB-11 TR?
The W634GU6QB-11 TR supports a maximum data rate of 1866 MT/s, corresponding to a 933 MHz differential clock frequency (fCK). This is defined by its -11 speed grade and validated under JEDEC DDR3L-1866 timing specifications (13-13-13 CL-tRCD-tRP). Operation beyond this rate is not guaranteed and violates the device's AC characterization.
Does the W634GU6QB-11 TR support both DDR3 and DDR3L voltage levels?
Yes, the W634GU6QB-11 TR is backward compatible with 1.5V DDR3 operation while fully compliant with DDR3L 1.35V requirements. It accepts VDD/VDDQ between 1.283 V and 1.45 V for DDR3L mode and 1.425 V to 1.575 V for DDR3 mode, with appropriate mode register configuration and voltage sequencing per JEDEC JESD79-3F.
How does the W634GU6QB-11 TR implement on-die termination (ODT)?
The W634GU6QB-11 TR supports synchronous, dynamic, and asynchronous ODT modes controlled via MR1 and MR2. Dynamic ODT (Rtt_WR) activates termination only during WRITE operations on DQ/DQS lines, improving signal integrity without impacting READ timing. Nominal ODT values include 120 Ω, 60 Ω, and 40 Ω, calibrated against the external ZQ resistor.
What is the purpose of the Multi-Purpose Register (MPR) in the W634GU6QB-11 TR?
The MPR in the W634GU6QB-11 TR outputs a fixed 0x00000000 pattern on DQ pins during MPR read commands. This known pattern enables system-level timing margin testing-such as eye diagram measurement and setup/hold validation-without requiring functional memory access or data-dependent patterns.
Can the W634GU6QB-11 TR operate in Partial Array Self-Refresh (PASR) mode?
Yes, the W634GU6QB-11 TR supports PASR via MR2 programming to refresh only selected banks (¼, ½, or full array). This reduces IDD6 current by up to 50% during idle periods, extending battery life in portable or energy-sensitive applications while maintaining data retention in active banks.
W634GU6QB-11 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 4Gbit
- Memory Organization:
- 256M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W634GU6QB-11 TR FAQ
1.How can I place an order for W634GU6QB-11 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W634GU6QB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W634GU6QB-11 TR reliable?
The price and inventory of W634GU6QB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W634GU6QB-11 TR is usually 5 days.
3.What payment methods are accepted for W634GU6QB-11 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W634GU6QB-11 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W634GU6QB-11 TR?
W634GU6QB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W634GU6QB-11 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W634GU6QB-11 TR?
For technical support, including W634GU6QB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W634GU6QB-11 TR requirements.
6.How does Aetrix verify that W634GU6QB-11 TR is sourced from the original manufacturer or authorized distributors?
All W634GU6QB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W634GU6QB-11 TR meets industry standards.
7.What is the process for return or replacement of W634GU6QB-11 TR?
All W634GU6QB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W634GU6QB-11 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W634GU6QB-11 TR part is unused and in its original packaging.
Return procedure for W634GU6QB-11 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W634GU6QB-11 TR Tags
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M24C02-WMN6TP
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