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Winbond Electronics Corporation W634GU8QB-09

Part No.:
W634GU8QB-09
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-VFBGA
Datasheet:
AetrixW634GU8QB-09.pdf
Description:
IC DRAM 4GBIT PAR 78VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,080

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Product details

Overview

W634GU8QB-09 from Winbond is a 4Gb (64M × 8) DDR3L SDRAM organized across 8 internal banks, operating at 1.35V nominal supply with DDR3L-2133 speed grade (14-14-14 CL-tRCD-tRP), supporting up to 2133 MT/s data rates and designed for memory subsystems in industrial embedded controllers, network edge devices, and automotive infotainment head units.

For engineers reviewing the W634GU8QB-09 datasheet, W634GU8QB-09 pinout, W634GU8QB-09 application, or W634GU8QB-09 equivalent, key selection considerations include its -09 speed bin's 1066 MHz clock frequency, 1.35V VDD/VDDQ operation with 1.5V backward compatibility, CAS latency support up to CL=14, and industrial temperature range (0°C to 95°C).

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with DLL-aligned DQ/DQS timing and bi-directional differential strobes that are edge-aligned on reads and center-aligned on writes. It supports programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, and auto-precharge for burst operations.

The device integrates ZQ calibration for output driver and ODT impedance tuning, dynamic ODT (Rtt_WR) with selectable termination values, and multi-purpose register (MPR) readout for system-level timing calibration. Its asynchronous RESET# pin enables deterministic power-up initialization and runtime reset independent of clock state.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density4 Gb (64M words × 8 banks × 8 bits)
Data Rate2133 MT/s (DDR3L-2133, fCK = 1066 MHz)
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward compatible with 1.5 V ±0.075 V
CAS LatencyCL = 5 to 14; supports tAA = 13.09 ns minimum at CL=14
Burst LengthBL8 (fixed) and BC4 (on-the-fly selectable)
Operating Temp0°C ≤ TCASE ≤ 95°C (industrial grade)
PackageVFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free)

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and ball pitch of 0.8 mm. Ball map conforms to JEDEC MO-270DA standard for DDR3L SDRAM.

Pin/Terminal Circuit Role Design Meaning
A0–A14Address InputsRow/column address inputs for bank and page access; multiplexed with BA0–BA2 for bank selection
BA0–BA2Bank Address InputsSelect one of eight internal banks; latched with A0–A14 on ACT command
CK / CK#Differential Clock InputsEdge-sensitive inputs defining command timing; all commands latched at CK rising / CK# falling crosspoint
DQ0–DQ7Data I/OsBi-directional 8-bit data bus; source-synchronous with DQS/DQS#; support DM masking
DQS / DQS#Differential Data StrobeSource-synchronous strobe pair; edge-aligned with read data, center-aligned with write data
DM0–DM7Data Mask InputsPer-byte write mask control; active-high during WRITE to suppress corresponding DQ bits
RESET#Asynchronous ResetActive-low signal initiating power-up initialization sequence or runtime reset independent of clock state
ODTOn-Die Termination ControlDynamic enable/disable of programmable termination resistors on DQ/DQS/DM lines per MR1/MR2 settings

Key Features

Feature Design Value
Programmable CWLCAS Write Latency configurable per frequency (CWL = 5–10), enabling precise write timing alignment with clock phase
ZQ CalibrationOne-time or periodic calibration using external 240 Ω ±1% resistor to ground, correcting output driver and ODT impedance drift over voltage/temperature
Dynamic ODT (Rtt_WR)Termination impedance (Rtt = 120 Ω, 60 Ω, 40 Ω) activated only during WRITE bursts to minimize noise and improve signal integrity
Multi-Purpose Register (MPR)Predefined 128-bit pattern accessible via MRS command for automated board-level timing margin validation and eye diagram analysis
Write Leveling SupportHardware-assisted delay adjustment of DQS relative to CK during initialization, compensating for board skew between controller and W634GU8QB-09

Applications

Industrial PLC Memory Buffer Automotive Infotainment RAM

Use Scenario: Real-time motion control logic executing cyclic tasks with deterministic memory access latency.

IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7-based controller running FreeRTOS, interfacing via AXI or AHB bus with DDR3L PHY.

Use Value: CL=14 and tRCD=14 ns at 1066 MHz enable predictable worst-case access timing under thermal stress up to 95°C case temperature.

Use Scenario: In-vehicle navigation system rendering HD maps and voice prompts while buffering video streams.

IC Role / Device Role / Timing Role: Main system RAM for quad-core application processor handling concurrent UI, media decode, and CAN gateway tasks.

Use Value: Dynamic ODT and write leveling ensure robust signal integrity across long PCB traces in EMI-heavy automotive cabins.

Network Edge Router Cache Medical Imaging Display Buffer

Use Scenario: Packet classification engine requiring high-bandwidth temporary storage for flow table lookups and header modification.

IC Role / Device Role / Timing Role: High-throughput buffer between packet processing ASIC and 10G Ethernet MAC, operating in burst-interleaved mode.

Use Value: 8-bank concurrency and 1K-page size reduce row activation overhead, sustaining >1.8 GB/s sustained bandwidth under mixed read/write loads.

Use Scenario: DICOM viewer rendering real-time ultrasound frames with minimal display latency and zero frame drop.

IC Role / Device Role / Timing Role: Frame buffer for FPGA-based video pipeline driving 1920×1080@60Hz LVDS panel with gamma correction LUT storage.

Use Value: MPR-read calibration pattern and tAA=13.09 ns guarantee sub-14 ns read-to-data validity for pixel clock synchronization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT41K256M16HA-125:E2Gb density (256M×8), 1250 MHz max clock, 1.35V only (no 1.5V compatibility), 96-ball FBGALimited to lower bandwidth systems; lacks 1.5V fallback for legacy designsChoose when footprint and thermal profile prioritize smaller package over density and voltage flexibility
IS43TR16256B-125KBL2Gb density, 1250 MHz max clock, 1.35V/1.5V dual-voltage support, 96-ball FBGALower density and speed; no MPR or write leveling support per datasheetChoose for cost-sensitive industrial HMI where calibration features are not required

Compared with W634GU8QB-09, both alternatives offer DDR3L compliance but lack its 4Gb density, 2133 MT/s capability, and full JEDEC calibration suite (MPR + write leveling + ZQ), making them suitable only for less demanding memory subsystems.

Availability

W634GU8QB-09 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive infotainment RAM, and network edge router cache applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W634GU8QB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W634GU8QB-09 belongs to Winbond's DDR3L SDRAM product line, engineered for high-reliability embedded systems requiring low-voltage operation, extended temperature tolerance, and JEDEC-compliant calibration features.

FAQ

What is the maximum clock frequency supported by the W634GU8QB-09?

The W634GU8QB-09 supports a maximum clock frequency of 1066 MHz, enabling a data transfer rate of 2133 MT/s (DDR3L-2133). This is validated under the -09 speed grade with CL-tRCD-tRP = 14-14-14 timing and VDD/VDDQ = 1.283 V to 1.45 V at 0°C to 95°C case temperature. The W634GU8QB-09 achieves this performance while maintaining full JEDEC DDR3L compliance.

Does the W634GU8QB-09 support 1.5V operation?

Yes, the W634GU8QB-09 is backward compatible with 1.5V DDR3 operation per JEDEC JESD79-3F specification. It accepts VDD/VDDQ = 1.5V ± 0.075 V and maintains functional timing and electrical behavior, allowing seamless integration into legacy 1.5V memory subsystems without redesign. The W634GU8QB-09 retains all DDR3L features-including low-power modes-even at 1.5V.

How does the W634GU8QB-09 handle power-up initialization?

The W634GU8QB-09 uses an asynchronous RESET# pin to initiate a deterministic power-up initialization sequence. When RESET# is asserted low after VDD/VDDQ stabilize, the device executes internal DLL reset, ZQ calibration, and mode register programming before entering idle state. This ensures repeatable timing alignment without requiring external clock conditioning. The W634GU8QB-09 guarantees initialization completion within 200 µs of RESET# deassertion.

What calibration features does the W634GU8QB-09 provide for system-level timing margining?

The W634GU8QB-09 provides three hardware-calibration features: ZQ calibration for output driver and ODT impedance tuning, write leveling for DQS-to-CK delay compensation, and Multi-Purpose Register (MPR) readout of a predefined 128-bit pattern for eye diagram analysis. These features are fully JEDEC-compliant and require no firmware intervention. The W634GU8QB-09 supports all three simultaneously during system bring-up.

Is the W634GU8QB-09 pin-compatible with other Winbond DDR3L SDRAMs?

The W634GU8QB-09 uses a standardized VFBGA-78 package conforming to JEDEC MO-270DA, and its ball assignment matches Winbond's W63xGU8xx family (e.g., W632GU8QB-12). Pin functions-including A0–A14, BA0–BA2, DQ0–DQ7, DQS/DQS#, and RESET#-are identical across speed grades. However, timing parameters and supported CL/CWL values differ; the W634GU8QB-09 must be configured per its -09 speed bin specifications.

W634GU8QB-09 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-VFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
4Gbit
Memory Organization:
512M x 8
Memory Interface:
Parallel
Clock Frequency:
1.06 GHz
Write Cycle Time - Word, Page:
15ns
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-VFBGA (8x10.5)

W634GU8QB-09 FAQ

1.How can I place an order for W634GU8QB-09 through Aetrix?

Please submit a Request for Quotation (RFQ) for W634GU8QB-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W634GU8QB-09 reliable?

The price and inventory of W634GU8QB-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W634GU8QB-09 is usually 5 days.

3.What payment methods are accepted for W634GU8QB-09?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W634GU8QB-09 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W634GU8QB-09?

W634GU8QB-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W634GU8QB-09 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W634GU8QB-09?

For technical support, including W634GU8QB-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W634GU8QB-09 requirements.

6.How does Aetrix verify that W634GU8QB-09 is sourced from the original manufacturer or authorized distributors?

All W634GU8QB-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W634GU8QB-09 meets industry standards.

7.What is the process for return or replacement of W634GU8QB-09?

All W634GU8QB-09 units undergo pre-shipment inspection (PSI). If there is an issue with W634GU8QB-09, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W634GU8QB-09 part is unused and in its original packaging.

Return procedure for W634GU8QB-09:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

W634GU8QB-09 Tags

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