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Winbond Electronics Corporation W634GU8QB09I
- Part No.:
- W634GU8QB09I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W634GU8QB09I.pdf
- Description:
- IC DRAM 4GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,336
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Product details
Overview
W634GU8QB09I from Winbond Electronics is a 4Gb (64M × 8) DDR3L SDRAM with 8 internal banks, 1.35V nominal supply, and industrial-grade temperature support (–40°C to +95°C). It delivers 2133 MT/s data rates (DDR3L-2133, CL=14), supports programmable CAS Latency (CL=5–14), CWL (5–10), and on-die termination (ODT) for high-speed memory subsystems in embedded controllers and networking equipment.
For engineers reviewing the W634GU8QB09I datasheet, W634GU8QB09I pinout, W634GU8QB09I application, or W634GU8QB09I equivalent, this page provides verified timing parameters, ball configuration, ODT configuration modes, ZQ calibration behavior, and industrial-temperature operational boundaries critical for DDR3L interface validation and PCB layout signoff.
Technical Context
This DDR3L SDRAM implements a double-data-rate architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ transitions to clock edges, enabling stable 1066 MHz clock operation (tCK = 0.938 ns min).
The device supports full JEDEC DDR3L command set including ACTIVE, PRECHARGE, READ/WRITE with auto-precharge, REFRESH, SELF-REFRESH with PASR and ASR, and power-down modes (precharged/active). Mode registers MR0–MR3 configure CAS latency, additive latency, CWL, ODT RTT values, dynamic ODT, and MPR readout for system-level timing calibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Gb (64M words × 8 banks × 8 bits) |
| Data Rate | 2133 MT/s (DDR3L-2133, 1066 MHz clock) |
| CAS Latency | Configurable CL = 5–14; CL=14 at 1066 MHz (tAA = 13.09 ns) |
| CAS Write Latency | Configurable CWL = 5–10; CWL=10 at 1066 MHz (WL = AL + CWL) |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible to 1.5 V ±0.075 V |
| Operating Temperature | –40°C ≤ TCASE ≤ +95°C (industrial grade) |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
| Refresh Interval | tREFI = 7.8 μs at 0–85°C; 3.9 μs at 85–95°C (supports extended temp refresh) |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height) with 78 solder balls arranged in 8×10 array plus 2 dummy balls (A1/B1), compliant with JEDEC MO-270AB. Ball pitch is 0.8 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1, B1 | Dummy | No electrical connection; mechanical support only |
| A2–A9, B2–B9 | Address/Command (A0–A15, BA0–BA2, CKE, CS#, RAS#, CAS#, WE#) | Latched on rising edge of CK; synchronous to differential clock pair |
| C1–C9, D1–D9 | Data I/O (DQ0–DQ7), Data Mask (DM0–DM7), Strobe (DQS0, DQS0#) | Bi-directional; DQS/DQS# source-synchronous, edge-aligned on read, center-aligned on write |
| E1–E9, F1–F9 | Power (VDD, VDDQ), Ground (VSS, VSSQ), ODT control (ODT) | VDD/VDDQ = 1.35 V; VSSQ isolated for I/O noise reduction; ODT enables on-die termination during reads/writes |
| G1–G9, H1–H9 | Clock (CK, CK#), Reset (RESET#), ZQ | RESET# is asynchronous active-low initialization signal; ZQ connects to external 240 Ω ±1% resistor for output driver/ODT calibration |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Additive Latency (AL) | AL = 0, CL−1, or CL−2 enables flexible command bus scheduling without sacrificing tRCD/tRP timing margins |
| ZQ Calibration | Single external 240 Ω resistor calibrates both output driver impedance and ODT resistance across voltage/temperature |
| Dynamic ODT (Rtt_WR) | Termination enabled only during write bursts via MR2 bit, reducing standby power and improving write signal integrity |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern readout supports system-level timing margin verification and write leveling calibration |
| Partial Array Self-Refresh (PASR) | Selectively refreshes ¼, ½, or full array to reduce self-refresh current by up to 50% in low-power states |
| Asynchronous RESET# | Guarantees deterministic power-up initialization sequence independent of clock stability, required for cold-start reliability |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time I/O processing in programmable logic controllers requiring deterministic memory access under wide ambient temperature swings. IC Role / Device Role / Timing Role: Primary working memory with guaranteed –40°C to +95°C operation, supporting burst reads/writes and auto-precharge for cyclic scan execution. Use Value: Eliminates thermal derating and enables single-memory-design reuse across industrial enclosures without heatsink dependency. | Use Scenario: High-throughput packet buffering in Layer 2/3 Ethernet switches handling 10 GbE line-rate traffic. IC Role / Device Role / Timing Role: Low-latency, high-bandwidth buffer interfacing directly to MAC controllers via DDR3L PHY with 2133 MT/s throughput. Use Value: Delivers 17.06 GB/s peak bandwidth (2133 MT/s × 8 bytes) while maintaining signal integrity via dynamic ODT and write leveling. |
| Medical Imaging Frame Store | Automotive ADAS Video Preprocessor |
Use Scenario: Temporary storage of uncompressed DICOM image frames during real-time ultrasound or MRI reconstruction pipelines. IC Role / Device Role / Timing Role: Burst-capable frame buffer supporting interleaved read/write with CAS latency tuning for variable pipeline depth. Use Value: Enables CL=14 operation at 1066 MHz for maximum throughput while meeting medical-grade reliability via industrial-temp qualification. | Use Scenario: On-camera video preprocessing unit capturing and buffering raw sensor streams before AI inference in autonomous driving ECUs. IC Role / Device Role / Timing Role: Low-power DDR3L memory with PASR and self-refresh modes to minimize idle current during sensor sleep cycles. Use Value: Reduces IDD6 to 15 mA in self-refresh and supports 3.9 μs refresh intervals at 95°C junction, meeting automotive thermal constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16256BL-107MBLI | 16-bit x 256M density (4Gb), same VDD/VDDQ range and –40°C to +95°C rating, but 96-ball FBGA package and different ballout | Requires PCB redesign due to non-pin-compatible footprint and different address/command mapping | Select when wider data bus (x16) and higher burst efficiency are needed; verify MR register compatibility for ODT and CWL settings |
| MT41K256M16HA-125:E | Same 4Gb density, x16 organization, 125-ball FBGA, supports DDR3L-1600 (800 MHz) only - not DDR3L-2133 | Limited to 1600 MT/s; lacks CL=14/CWL=10 support and industrial-temp DDR3L-2133 compliance | Choose for cost-sensitive designs where 1600 MT/s suffices and x16 interface simplifies controller routing |
Compared with IS43TR16256BL-107MBLI and MT41K256M16HA-125:E, the W634GU8QB09I uniquely delivers DDR3L-2133 performance in an 8-bit x 64M configuration with industrial-temperature validation, making it optimal for space-constrained, high-throughput embedded systems requiring minimal board area and maximum speed per pin.
Availability
W634GU8QB09I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W634GU8QB09I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W634GU8QB09I belongs to Winbond's DDR3L SDRAM product line, designed specifically for high-reliability embedded systems demanding industrial-temperature operation, low-voltage efficiency, and JEDEC-compliant timing robustness in space-constrained layouts.
FAQ
What is the maximum supported data rate for W634GU8QB09I?
The W634GU8QB09I supports DDR3L-2133 operation at 2133 MT/s (1066 MHz clock frequency), validated across its full industrial temperature range (–40°C to +95°C). This requires CL=14 and CWL=10 settings, with tCK(AVG) minimum of 0.938 ns. The device maintains full JEDEC AC/DC specifications at this speed grade without derating.
Does W634GU8QB09I support backward compatibility with standard 1.5V DDR3 systems?
Yes, W634GU8QB09I supports dual-voltage operation: it functions at 1.35 V nominal (DDR3L mode) and is fully backward compatible with 1.5 V ±0.075 V DDR3 systems. VDD/VDDQ may be switched between 1.35 V and 1.5 V without hardware modification, though mode register settings (e.g., CWL, CL) must be reconfigured per JEDEC spec for each voltage.
How does the ZQ calibration function work on W634GU8QB09I?
W634GU8QB09I uses a single external 240 Ω ±1% resistor connected to the ZQ pin to calibrate both output driver strength and on-die termination (ODT) resistance. Calibration occurs automatically at power-up and can be triggered manually via ZQCL or ZQCS commands. The process adjusts internal current sources to maintain impedance accuracy across voltage and temperature variations.
What power-saving features are implemented in W634GU8QB09I?
W634GU8QB09I includes multiple power-saving features: Precharged/Active Power-Down modes, Self-Refresh with Partial Array Self-Refresh (PASR) to reduce current by up to 50%, Auto Self-Refresh (ASR) for temperature-adaptive refresh, and Dynamic ODT (Rtt_WR) that activates termination only during write bursts. IDD6 in self-refresh is specified at ≤15 mA across the full temperature range.
Is W634GU8QB09I pin-compatible with other Winbond DDR3L SDRAMs like W632GU8KB?
No, W634GU8QB09I is not pin-compatible with W632GU8KB. While both use VFBGA-78 packages, W632GU8KB is a 2Gb (32M × 8) part with different ball assignments for address, bank select, and control signals. Pinout validation must be performed using the respective ball configuration tables in each device's datasheet; direct substitution requires PCB redesign.
W634GU8QB09I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 4Gbit
- Memory Organization:
- 512M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 1.06 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W634GU8QB09I FAQ
1.How can I place an order for W634GU8QB09I through Aetrix?
Please submit a Request for Quotation (RFQ) for W634GU8QB09I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W634GU8QB09I reliable?
The price and inventory of W634GU8QB09I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W634GU8QB09I is usually 5 days.
3.What payment methods are accepted for W634GU8QB09I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W634GU8QB09I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W634GU8QB09I?
W634GU8QB09I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W634GU8QB09I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W634GU8QB09I?
For technical support, including W634GU8QB09I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W634GU8QB09I requirements.
6.How does Aetrix verify that W634GU8QB09I is sourced from the original manufacturer or authorized distributors?
All W634GU8QB09I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W634GU8QB09I meets industry standards.
7.What is the process for return or replacement of W634GU8QB09I?
All W634GU8QB09I units undergo pre-shipment inspection (PSI). If there is an issue with W634GU8QB09I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W634GU8QB09I part is unused and in its original packaging.
Return procedure for W634GU8QB09I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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