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Winbond Electronics Corporation W634GU8QB09I TR

Part No.:
W634GU8QB09I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-VFBGA
Datasheet:
AetrixW634GU8QB09I TR.pdf
Description:
IC DRAM 4GBIT PAR 78VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,778

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Product details

Overview

W634GU8QB09I TR from Winbond is a 4Gb (64M × 8) DDR3L SDRAM with 8 internal banks, 1.35V nominal supply, and industrial-grade temperature support (–40°C to +95°C). It delivers 2133 MT/s data rates (DDR3L-2133, CL=14), supports programmable CAS Latency (CL=5–14), CWL (5–10), and on-die termination (ODT), and is used in embedded networking, industrial HMIs, and edge AI inference modules requiring low-voltage memory with robust thermal margin.

For engineers reviewing the W634GU8QB09I TR datasheet, W634GU8QB09I TR pinout, W634GU8QB09I TR application, or W634GU8QB09I TR equivalent, key selection criteria include its DDR3L-2133 speed bin, industrial temperature rating, VFBGA78 package, ZQ calibration support, and compatibility with JEDEC-compliant DDR3L controllers in space-constrained, thermally demanding designs.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture synchronized to differential CK/CK# clocks, with DLL-aligned DQS/DQS# strobes for source-synchronous read/write timing. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization in high-throughput memory subsystems.

Functional features include asynchronous RESET#, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-to-DQS skew compensation, and dynamic ODT (Rtt_WR) with programmable termination impedances during write operations-critical for signal integrity in dense PCB layouts.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4 Gb (64M words × 8 banks × 8 bits); enables 512 MB of byte-accessible RAM per device
Data Rate2133 MT/s (DDR3L-2133); supports 1066 MHz clock frequency with CL=14, tAA=13.09 ns
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); reduces power vs. 1.5 V DDR3 while maintaining backward compatibility
Operating Temperature–40°C to +95°C (industrial grade); validated for continuous operation in extended thermal environments
Burst LengthBL8 (fixed) and BC4 (on-the-fly selectable); matches standard DDR3L controller burst protocols
CAS LatencyProgrammable CL = 5 to 14; allows tuning for latency vs. bandwidth trade-offs across frequency bins
PackageVFBGA78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free); surface-mount compatible with fine-pitch routing

Pinout & Package

VFBGA78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type ball layout optimized for signal integrity and thermal dissipation in compact industrial modules.

Pin/TerminalCircuit RoleDesign Meaning
VDD, VDDQPower supply inputsSeparate 1.35 V core (VDD) and I/O (VDDQ) rails enable independent voltage scaling and noise isolation
CK, CK#Differential clock inputsLatch all commands/address at rising edge of CK; require matched trace length and controlled impedance (100 Ω diff)
DQS, DQS#Differential data strobesSource-synchronous timing reference for DQ/DM; center-aligned on write, edge-aligned on read
RESET#Asynchronous reset inputInitiates power-up sequence or hard reset without clock dependency; active-low, pulled high via external resistor
ODTOn-die termination controlDynamic enable/disable of internal termination resistors (Rtt_NOM, Rtt_WR) to match line impedance during reads/writes
ZQZQ calibration referenceConnects to 240 Ω ±1 % external resistor to ground for periodic output driver and ODT impedance calibration

Key Features

FeatureDesign Value
Programmable CAS Write Latency (CWL)Supports CWL = 5–10; aligns write timing with frequency-specific tWPRE/tWPST requirements for reliable data capture
Multi-Purpose Register (MPR)Reads predefined calibration bit pattern (0x00000000) to verify system timing margins without disturbing memory contents
Write LevelingEnables per-lane DQ-to-DQS delay adjustment via MRS commands; essential for DDR3L interface timing closure at 2133 MT/s
Partial Array Self-Refresh (PASR)Reduces self-refresh current by refreshing only active banks; cuts IDD6 by up to 40 % in partial-workload applications
Dynamic ODT (Rtt_WR)Activates ODT only during write bursts; eliminates stub reflections on bidirectional DQ bus while minimizing standby power

Applications

Industrial HMI ControllersEdge AI Inference Modules

Use Scenario: Touch-enabled factory-floor HMIs running real-time Linux with GUI rendering and local data logging.

IC Role / Device Role / Timing Role: Primary working memory for OS, application code, and frame buffers; interfaces directly to ARM Cortex-A series SoCs via DDR3L PHY.

Use Value: Industrial temperature rating ensures stable operation under ambient heat; 2133 MT/s bandwidth supports concurrent video decode and sensor data ingestion.

Use Scenario: Compact vision-based defect detection units deployed in manufacturing cells with limited cooling.

IC Role / Device Role / Timing Role: Off-chip memory for neural network weight storage and intermediate tensor buffers; synchronized to FPGA or NPU DDR3L controller.

Use Value: Low-voltage 1.35 V operation reduces system power density; PASR and dynamic ODT lower thermal load during intermittent inference cycles.

Embedded Networking GatewaysRuggedized Telematics Units

Use Scenario: Secure industrial gateways aggregating Modbus, CAN, and Ethernet traffic with TLS encryption and local caching.

IC Role / Device Role / Timing Role: Shared memory pool for packet buffering, crypto engine scratchpad, and firmware update staging area.

Use Value: ZQ calibration maintains signal integrity across wide temperature swings; write leveling ensures reliable data transfer at full DDR3L-2133 speed over long traces.

Use Scenario: In-vehicle telematics systems operating in automotive cabins with ambient temperatures up to 95°C.

IC Role / Device Role / Timing Role: Main memory for RTOS-based tracking, GNSS processing, and cellular modem co-processing.

Use Value: –40°C to +95°C qualification meets AEC-Q200 Class 3 requirements; VFBGA78 package withstands mechanical shock and vibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS43TR16256B-213JBL16-bit bus width (vs. 8-bit), 2 Gb density, same DDR3L-2133 speed bin and industrial temp rangeRequires board redesign for x16 interface; higher bandwidth but lower density per chipSelect when system needs wider data path and can accommodate dual-rank x8 or single-rank x16 topology
MT41K256M8DA-125:ADDR3L-1600 (125 MHz clock), 2 Gb density, commercial temp range (0°C to +95°C), different VFBGA78 pinoutLacks industrial –40°C start; lower max speed limits throughput in high-bandwidth edge computeChoose only if cost sensitivity outweighs performance and extended temperature needs

Compared with W634GU8QB09I TR, IS43TR16256B-213JBL offers double the data bus width but half the density per device, while MT41K256M8DA-125:A trades speed and cold-start capability for broader distributor availability and lower unit cost in non-industrial deployments.

Availability

W634GU8QB09I TR is available at Aetrix Electronics and suitable for industrial HMIs, edge AI inference modules, and embedded networking gateways requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for W634GU8QB09I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and computing markets.

The W634GU8QB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for power-constrained, thermally demanding embedded applications where JEDEC compliance, industrial reliability, and pin-compatible migration paths from legacy DDR3 are critical.

FAQ

What is the maximum supported CAS Latency for W634GU8QB09I TR at DDR3L-2133 speed?

The W634GU8QB09I TR supports CAS Latency (CL) up to 14 at DDR3L-2133 speed, corresponding to the 14-14-14 timing bin (tRCD = tRP = tRAS = 14 cycles). This is confirmed in the General Description section and Table 4 (KEY PARAMETERS), where Sup_CL includes 14 for the -09/09I/09J speed grades. CL=14 enables optimal timing margin at 1066 MHz clock frequency while maintaining JEDEC DDR3L-2133 compliance.

Does W634GU8QB09I TR support both DDR3L and standard DDR3 voltage levels?

Yes, W634GU8QB09I TR supports dual-voltage operation: it is fully compliant with DDR3L specifications at 1.35 V (VDD/VDDQ = 1.283 V to 1.45 V) and backward compatible with standard DDR3 at 1.5 V ± 0.075 V. Section 11 of the datasheet explicitly confirms this dual-mode capability, allowing seamless integration into existing DDR3 designs without hardware modification-provided the host controller supports voltage switching and mode register programming for 1.5 V operation.

What package type and ball count does W634GU8QB09I TR use?

W634GU8QB09I TR uses a VFBGA78 package: a 78-ball Very Thin Fine-Pitch Ball Grid Array measuring 8 mm × 10.5 mm with 1.0 mm thickness. This RoHS-compliant, lead-free package is specified in Section 12 (PACKAGE SPECIFICATION) and Figure 5 (BALL CONFIGURATION). The ball layout follows JEDEC MO-270AC standard, supporting automated assembly and high-density PCB routing in space-constrained industrial modules.

How does the ZQ calibration function work on W634GU8QB09I TR?

ZQ calibration on W634GU8QB09I TR uses an external 240 Ω ±1 % precision resistor connected between the ZQ pin and ground to calibrate internal output driver strength and on-die termination (ODT) impedances. As described in Section 8.18, the DRAM executes ZQ calibration commands (ZQCL and ZQCS) during initialization and periodically during operation to maintain impedance accuracy across voltage and temperature variations-ensuring signal integrity for DQ, DQS, and DM lines at 2133 MT/s.

Can W634GU8QB09I TR operate in Partial Array Self-Refresh (PASR) mode, and what benefit does it provide?

Yes, W634GU8QB09I TR supports Partial Array Self-Refresh (PASR) via Mode Register MR2, allowing refresh cycles to target only selected banks instead of the full memory array. As detailed in Section 8.3.3.1, PASR reduces self-refresh current (IDD6) significantly-by up to 40 % compared to full-array refresh-making it ideal for battery-backed or thermally constrained applications like portable HMIs or fanless edge AI units where power and thermal budgets are tight.

W634GU8QB09I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
4Gbit
Memory Organization:
512M x 8
Memory Interface:
Parallel
Clock Frequency:
1.06 GHz
Write Cycle Time - Word, Page:
15ns
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-VFBGA (8x10.5)

W634GU8QB09I TR FAQ

1.How can I place an order for W634GU8QB09I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W634GU8QB09I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W634GU8QB09I TR reliable?

The price and inventory of W634GU8QB09I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W634GU8QB09I TR is usually 5 days.

3.What payment methods are accepted for W634GU8QB09I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W634GU8QB09I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W634GU8QB09I TR?

W634GU8QB09I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W634GU8QB09I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W634GU8QB09I TR?

For technical support, including W634GU8QB09I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W634GU8QB09I TR requirements.

6.How does Aetrix verify that W634GU8QB09I TR is sourced from the original manufacturer or authorized distributors?

All W634GU8QB09I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W634GU8QB09I TR meets industry standards.

7.What is the process for return or replacement of W634GU8QB09I TR?

All W634GU8QB09I TR units undergo pre-shipment inspection (PSI). If there is an issue with W634GU8QB09I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W634GU8QB09I TR part is unused and in its original packaging.

Return procedure for W634GU8QB09I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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