Winbond Electronics Corporation W634GU8QB-09 TR

Overview

W634GU8QB-09 TR from Winbond is a 4Gb (64M × 8) DDR3L SDRAM with 8 internal banks, 1.35V nominal supply, and DDR3L-2133 speed grade (14-14-14 CL-tRCD-tRP), supporting CAS Latency up to 14 and programmable CWL up to 10. It operates across 0°C to 95°C case temperature and delivers 2133 MT/s data rates in systems requiring low-voltage memory for embedded computing, industrial HMIs, and network edge devices.

For engineers reviewing the W634GU8QB-09 TR datasheet, W634GU8QB-09 TR pinout, W634GU8QB-09 TR application, or W634GU8QB-09 TR equivalent, key selection factors include its VFBGA-78 package, DDR3L-2133 timing compliance, ZQ calibration support, asynchronous RESET# pin, and dual-mode ODT (synchronous/dynamic) for signal integrity optimization in high-speed PCB layouts.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture synchronized to differential CK/CK# clocks, with DLL-aligned DQ/DQS timing and bi-directional differential strobes center-aligned on write and edge-aligned on read. It supports posted CAS with AL = 0, CL−1, or CL−2, enabling RL = AL + CL for flexible command bus efficiency.

The device integrates programmable mode registers (MR0–MR3) for CAS Latency, CWL, ODT RTT values, PASR, ASR, and write leveling, plus MPR-based system-level timing calibration. Its VDD/VDDQ range (1.283V–1.45V) ensures backward compatibility with 1.5V DDR3 while reducing power consumption in thermally constrained applications.

Key Specifications

Pinout & Package

VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm thickness) with ball pitch of 0.8 mm, arranged in 9×9 array excluding corner balls; RoHS-compliant, lead-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, the W634GU8QB-09 TR provides higher DDR3L-2133 performance, broader CAS/CWL flexibility, and advanced calibration features (write leveling, MPR, PASR), making it optimal for next-generation industrial and medical platforms where timing margin and power control are critical.

Availability

W634GU8QB-09 TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging terminals, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W634GU8QB-09 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W634GU8QB-09 TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for low-power, high-reliability embedded systems operating in extended temperature environments with stringent signal integrity requirements.

FAQ

What is the maximum data rate supported by the W634GU8QB-09 TR?

The W634GU8QB-09 TR supports DDR3L-2133 operation with a maximum data rate of 2133 MT/s, achieved at tCK = 0.938 ns minimum clock period and CL = 14 / CWL = 10 timing configuration. This is validated under 0°C to 95°C case temperature with VDD/VDDQ = 1.283 V to 1.45 V.

Does the W634GU8QB-09 TR support backward compatibility with standard 1.5V DDR3 systems?

Yes, the W634GU8QB-09 TR is fully backward compatible with 1.5V DDR3 systems. It accepts VDD/VDDQ = 1.5V ± 0.075V per JEDEC specification and maintains functional timing compliance, allowing seamless integration into legacy DDR3 designs without hardware modification.

What package type and dimensions does the W634GU8QB-09 TR use?

The W634GU8QB-09 TR uses a VFBGA-78 package measuring 8 mm × 10.5 mm with 0.8 mm ball pitch and 1.0 mm maximum height. It employs lead-free, RoHS-compliant materials and follows Winbond's Window BGA construction for improved thermal dissipation and solder joint reliability.

How does the W634GU8QB-09 TR handle power management during idle periods?

The W634GU8QB-09 TR supports Precharged Power Down, Active Power Down, Self-Refresh, Auto Self-Refresh (ASR), and Partial Array Self-Refresh (PASR). PASR allows selective bank refresh to reduce IDD6 current by up to 40% compared to full-array self-refresh, extending battery life in portable applications.

What calibration features are built into the W634GU8QB-09 TR for high-speed signal integrity?

The W634GU8QB-09 TR integrates ZQ calibration (using external 240 Ω resistor), write leveling (via DQS delay adjustment), and Multi-Purpose Register (MPR) readout for system-level timing validation. These features enable precise output driver tuning, DQS-to-CK skew compensation, and non-intrusive signal margin testing without disrupting normal operation.