Winbond Electronics Corporation W634GU8QB11I TR

Overview

W634GU8QB11I TR from Winbond is a 4Gb (64M × 8) DDR3L SDRAM with 8 internal banks, 1.35V nominal supply, and industrial temperature support (−40°C to +95°C). It operates at DDR3L-1866 speed (13-13-13 CL-tRCD-tRP), delivers up to 1866 MT/s data rates, and implements ZQ calibration, programmable CWL/AL, dynamic ODT, and asynchronous RESET# for embedded memory subsystems in networking and industrial controllers.

For engineers reviewing the W634GU8QB11I TR datasheet, W634GU8QB11I TR pinout, W634GU8QB11I TR application, or W634GU8QB11I TR equivalent, key selection criteria include its DDR3L-1866 timing compliance, −40°C to +95°C industrial rating, VFBGA78 package, on-die termination configurability, and backward compatibility with 1.5V DDR3 systems.

Technical Context

This DDR3L SDRAM uses an 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to clock edges, enabling stable high-speed operation across temperature and voltage variation.

It supports programmable CAS Latency (CL = 5–13), additive latency (AL = 0, CL−1, CL−2), and CAS Write Latency (CWL = 5–9), with tAA of 13.91 ns at DDR3L-1866. Power management includes active/precharge power-down, self-refresh, partial array self-refresh (PASR), and auto self-refresh (ASR).

Key Specifications

Pinout & Package

VFBGA78 package (8 mm × 10.5 mm, 1.0 mm thickness) with ball pitch of 0.8 mm, RoHS-compliant, lead-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with IS43TR16256BL-125KBL and MT41K256M16HA-125:E, the W634GU8QB11I TR uniquely delivers DDR3L-1866 performance in an 8-bit, VFBGA78 form factor with full industrial temperature support-enabling higher bandwidth per pin and simplified routing in space-constrained embedded designs.

Availability

W634GU8QB11I TR is available at Aetrix Electronics and suitable for industrial PLC controllers, network edge routers, medical imaging front-ends, and automotive ADAS domain controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W634GU8QB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W634GU8QB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems demanding high reliability, extended temperature operation, and JEDEC-compliant low-voltage memory performance.

FAQ

What is the maximum data rate supported by the W634GU8QB11I TR?

The W634GU8QB11I TR supports DDR3L-1866 operation with a maximum data rate of 1866 MT/s. This is validated at its specified speed bin (13-13-13 CL-tRCD-tRP) and guaranteed across the full industrial temperature range of −40°C to +95°C. The part achieves this using a 933 MHz clock frequency with double-data-rate transfers on both clock edges.

Does the W634GU8QB11I TR support backward compatibility with standard 1.5V DDR3 systems?

Yes, the W634GU8QB11I TR supports backward compatibility with 1.5V DDR3 systems. Its VDD/VDDQ supply range extends to 1.5V ± 0.075V, and it maintains full functional and timing compliance with JEDEC DDR3 standards when operated at 1.5V. This allows seamless integration into legacy DDR3 designs without hardware modification.

What package type and dimensions does the W634GU8QB11I TR use?

The W634GU8QB11I TR uses a VFBGA78 package measuring 8 mm × 10.5 mm with a 1.0 mm body height and 0.8 mm ball pitch. It features RoHS-compliant, lead-free construction and is optimized for automated surface-mount assembly in high-density PCB layouts common in industrial and networking equipment.

How does the W634GU8QB11I TR implement power management for low-power applications?

The W634GU8QB11I TR implements multiple power-saving mechanisms including precharge and active power-down modes, self-refresh (IDD6 ≤ 15 mA), auto self-refresh (ASR), and partial array self-refresh (PASR). PASR reduces refresh current by up to 50 % when only selected banks are active-critical for battery-powered or thermally constrained embedded systems.

Is ZQ calibration required for reliable operation of the W634GU8QB11I TR?

Yes, ZQ calibration is required for reliable operation of the W634GU8QB11I TR. It must be performed at power-up and optionally during operation using the ZQCL command. The device requires connection of a 240 Ω ±1 % external resistor between the ZQ pin and VSS to calibrate output driver strength and on-die termination impedances across process, voltage, and temperature variations.