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Winbond Electronics Corporation W634GU8QB-11 TR
- Part No.:
- W634GU8QB-11 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W634GU8QB-11 TR.pdf
- Description:
- IC DRAM 4GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W634GU8QB-11 TR from Winbond is a 4Gb (64M × 8) DDR3L SDRAM with 8 internal banks, 1.35V nominal supply, and DDR3L-1866 speed grade (13-13-13 CL/RCD/RP). It supports programmable CAS latency (CL=5–11), CWL=5–9, ZQ calibration, on-die termination (ODT), and asynchronous RESET# for power-up initialization. It is used in embedded computing, industrial controllers, and networking equipment requiring low-voltage memory with JEDEC-compliant timing.
For engineers reviewing the W634GU8QB-11 TR datasheet, W634GU8QB-11 TR pinout, W634GU8QB-11 TR application, or W634GU8QB-11 TR equivalent, key selection criteria include DDR3L-1866 timing compliance (tRCD/tRP = 13 ns), VDD/VDDQ = 1.283–1.45 V operation, industrial temperature support (0°C to 95°C), and VFBGA78 package compatibility with standard DDR3L layout rules.
Technical Context
This DDR3L SDRAM implements an 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to CK, enabling stable 1866 MT/s data rates under 1.35 V supply.
It supports programmable features including posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, partial array self-refresh (PASR), dynamic ODT (Rtt_WR), and write leveling for system-level timing calibration. Mode registers MR0–MR3 configure burst length, CL/CWL, ODT settings, PASR, ASR, and MPR access.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacity | 4 Gb (64M words × 8 banks × 8 bits); enables 512 MB of byte-addressable memory per device |
| Data Rate | DDR3L-1866 (1866 MT/s, fCK = 933 MHz); supports high-bandwidth interfaces in resource-constrained systems |
| Supply Voltage | VDD/VDDQ = 1.283 V to 1.45 V; compatible with 1.35 V nominal low-power rails and backward-compatible with 1.5 V DDR3 |
| CAS Latency | CL = 5–11 (JEDEC-compliant); determines minimum read access delay in clock cycles for timing closure |
| CAS Write Latency | CWL = 5–9; sets write-to-strobe alignment offset, critical for write timing margin at 1866 MT/s |
| Refresh Interval | tREFI = 7.8 μs (0–85°C); defines mandatory refresh scheduling granularity for data retention |
| Package | VFBGA78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free); matches standard DDR3L footprint and reflow profiles |
Pinout & Package
VFBGA78 package with 8×10.5 mm² body, 1.0 mm thickness, and ball pitch of 0.8 mm. Compliant with JEDEC MO-270AC standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column bank address during ACT/READ/WRITE; A10 controls auto-precharge |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation and interleaving |
| CK, CK# | Differential Clock | Edge-triggered command latch point; all commands sampled at CK rising / CK# falling crossing |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; double-data-rate transfers synchronized to DQS/DQS# |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe pair; edge-aligned with read data, center-aligned with write data |
| RESET# | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and mode register reset |
| ODT | On-Die Termination Control | Dynamic enable/disable of internal termination resistors (RTT_NOM/RTT_WR) on DQ/DQS/DM lines |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command encoding (e.g., WE# + RAS# + CAS# = PRECHARGE) |
| VDD, VDDQ | Power Supplies | Separate 1.35 V core (VDD) and I/O (VDDQ) rails; allows independent voltage scaling and noise isolation |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL | Supports CWL = 5–9 per frequency bin; ensures optimal write strobe-to-data alignment across DDR3L-1866 operating conditions |
| ZQ Calibration | Uses external 240 Ω ±1 % resistor to calibrate output driver strength and ODT impedance; maintains signal integrity over voltage/temperature drift |
| Dynamic ODT (Rtt_WR) | Enables on-the-fly ODT activation during WRITE bursts only; reduces stub reflections without impacting read timing or power |
| Write Leveling | Allows system controller to adjust DQS launch delay relative to CK; compensates for board skew and improves write setup/hold margins |
| Multi-Purpose Register (MPR) | Provides predefined read pattern for system-level timing calibration; eliminates need for test patterns stored in memory array |
Applications
| Industrial PLC Controllers | Network Edge Routers |
|---|---|
Use Scenario: Real-time deterministic control logic execution with local data buffering and firmware storage. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7/M4-based controllers running RTOS; provides low-latency random access and burst streaming for I/O mapping and protocol stacks. Use Value: DDR3L-1866 bandwidth (14.9 GB/s peak) and 1.35 V operation reduce thermal load in sealed enclosures while maintaining cycle-accurate response for motion control loops. | Use Scenario: Packet buffering and forwarding table storage in Layer 3 switching ASIC subsystems. IC Role / Device Role / Timing Role: High-throughput packet buffer memory interfaced to multi-gigabit Ethernet MACs; operates in bank-interleaved mode to sustain line-rate traffic under bursty loads. Use Value: 8-bank architecture and tRC = 47.9 ns enable >95% bus utilization during sustained 10 Gbps ingress/egress; VFBGA78 footprint supports dense PCB layouts. |
| Medical Imaging Front-End | Automotive ADAS Domain Controller |
Use Scenario: Temporary frame storage and real-time image processing pipeline in ultrasound or digital X-ray acquisition modules. IC Role / Device Role / Timing Role: Frame buffer memory for FPGA-accelerated image reconstruction; supports burst reads/writes aligned to pixel clock domains via programmable AL/CL. Use Value: CL=13 and tAA=13.91 ns guarantee sub-15 ns read latency for time-critical beamforming calculations; industrial temp rating ensures reliability in non-air-conditioned cabinets. | Use Scenario: Sensor fusion memory for camera/radar preprocessing in centralized vehicle compute units. IC Role / Device Role / Timing Role: Shared memory pool for heterogeneous SoC (e.g., NPU + CPU) executing perception algorithms; configured with PASR to minimize self-refresh current during idle sensor channels. Use Value: Partial Array Self-Refresh cuts IDD6 by up to 40% vs full-array mode; 0°C to 95°C operation meets automotive extended temperature requirements without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3L memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K256M8DA-125:A | Same 2Gb × 8 density and DDR3L-1866 speed; differs in VFBGA78 pinout (different ball assignment for VSS/VDDQ), no support for 105°C operation | Valid for commercial-temp designs where JEDEC-compliant layout reuse is prioritized over extended temperature range | Select when migrating from Micron reference designs or requiring identical AC timing tables and JEDEC validation reports |
| IS43TR16256B-125KBL | 16-bit bus width (vs 8-bit), same 4Gb capacity via x16 organization; requires PCB redesign for data bus width and different ODT configuration logic | Suitable for higher-bandwidth SoC interfaces needing 32-bit or 64-bit native word access without multiplexing | Choose only if host controller supports x16 mode and board layout accommodates doubled DQ count and revised termination scheme |
Compared with MT41K256M8DA-125:A and IS43TR16256B-125KBL, W634GU8QB-11 TR offers native 8-bit bus simplicity, guaranteed 0–95°C operation without derating, and Winbond-specific ZQ/ODT calibration sequences optimized for cost-sensitive industrial BOMs.
Availability
W634GU8QB-11 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for W634GU8QB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, PSRAM, and DDR SDRAM for industrial, automotive, and consumer applications.
The W634GU8QB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-optimized, low-power embedded systems requiring JEDEC-compliant performance with extended temperature support and simplified power delivery.
FAQ
What is the maximum supported CAS latency for W634GU8QB-11 TR at DDR3L-1866 speed?
W634GU8QB-11 TR supports CAS Latency (CL) values of 5, 6, 7, 8, 9, 10, and 11 at DDR3L-1866 speed. CL = 11 corresponds to a tAA of 13.91 ns, meeting JEDEC timing requirements for this speed grade. Higher CL values (13, 14) are reserved for slower bins and not valid for -11 suffix devices.
Does W634GU8QB-11 TR support both 1.35 V and 1.5 V operation?
Yes, W634GU8QB-11 TR is backward compatible with 1.5 V DDR3 systems. It operates within VDD/VDDQ = 1.283–1.45 V for DDR3L mode and supports VDD/VDDQ = 1.425–1.575 V for legacy DDR3 mode. Voltage switching between modes must follow the sequence defined in section 11.4 of the datasheet to avoid functional disruption.
What package type and dimensions does W634GU8QB-11 TR use?
W634GU8QB-11 TR uses a VFBGA78 package measuring 8 mm × 10.5 mm with 1.0 mm height and 0.8 mm ball pitch. It conforms to JEDEC MO-270AC and is RoHS-compliant with lead-free terminations. The ball map is documented in section 5 of the datasheet.
How is on-die termination (ODT) configured on W634GU8QB-11 TR?
ODT on W634GU8QB-11 TR is controlled via MR1 and MR2 registers. Static ODT (RTT_NOM) is set using MR1[9:7], supporting 120 Ω, 60 Ω, and 40 Ω values. Dynamic ODT (Rtt_WR) is enabled via MR2[8], activating termination only during WRITE operations. Both modes require ZQ calibration for accuracy.
Is W634GU8QB-11 TR suitable for automotive applications?
W634GU8QB-11 TR is rated for 0°C to 95°C case temperature and is not AEC-Q200 qualified. For automotive applications requiring −40°C to 105°C operation, Winbond offers the W634GU8QB11J variant (suffix J), which shares identical electrical specs but adds extended temperature validation and enhanced reliability screening.
W634GU8QB-11 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3L
- Memory Size:
- 4Gbit
- Memory Organization:
- 512M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.283V ~ 1.45V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W634GU8QB-11 TR FAQ
1.How can I place an order for W634GU8QB-11 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W634GU8QB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W634GU8QB-11 TR reliable?
The price and inventory of W634GU8QB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W634GU8QB-11 TR is usually 5 days.
3.What payment methods are accepted for W634GU8QB-11 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W634GU8QB-11 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W634GU8QB-11 TR?
W634GU8QB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W634GU8QB-11 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W634GU8QB-11 TR?
For technical support, including W634GU8QB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W634GU8QB-11 TR requirements.
6.How does Aetrix verify that W634GU8QB-11 TR is sourced from the original manufacturer or authorized distributors?
All W634GU8QB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W634GU8QB-11 TR meets industry standards.
7.What is the process for return or replacement of W634GU8QB-11 TR?
All W634GU8QB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W634GU8QB-11 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W634GU8QB-11 TR part is unused and in its original packaging.
Return procedure for W634GU8QB-11 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W634GU8QB-11 TR Tags
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M24C02-WMN6TP
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