Winbond Electronics Corporation W63AH2NBVABE

Overview

W63AH2NBVABE from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus width, 1.2V VDDQ supply, and 8-bank architecture supporting up to 1066 MT/s data rates. It implements on-die termination (ODT), partial array self-refresh (PASR), CA training, and ZQ calibration for mobile SoC memory interfaces in smartphones and tablets.

For engineers reviewing the W63AH2NBVABE datasheet, W63AH2NBVABE pinout, W63AH2NBVABE application, or W63AH2NBVABE equivalent, this page delivers verified electrical specs, ball assignment, LPDDR3 command timing context, and validated alternatives for low-power mobile memory design and BOM optimization.

Technical Context

This device operates as an 8-bank synchronous DRAM with double-data-rate transfers on both CK edges for command/address and DQ/DQS buses. It supports all LPDDR3 mandatory features: burst lengths of 8/16, auto-precharge, refresh scheduling per JEDEC JESD209-3B, and deep power-down mode with retention.

Power management includes three low-power states - power-down, self-refresh, and deep power-down - each with distinct entry/exit sequences and current profiles. Calibration support covers ZQ (RONPU/RONPD), CA training (MR41–MR42, MR48), and write leveling, all configurable via mode registers MR10–MR12 and MR43–MR48.

Key Specifications

Pinout & Package

W63AH2NBVABE uses a 136-ball FBGA package (10 mm × 12 mm × 0.8 mm height) with 0.5 mm pitch and RoHS-compliant matte tin finish. Ball assignment follows JEDEC MO-261AC standard for LPDDR3 x16 devices.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR3 memory applications.

Compared with MT52L1G32D2PF-107 WT:A and K4E6E304EC-EGCF, W63AH2NBVABE offers identical x16 FBGA footprint and LPDDR3-1066 performance but with Winbond-specific ZQ calibration behavior and CA training flow - critical for designs where initialization firmware is tightly coupled to vendor IP.

Availability

W63AH2NBVABE is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and mobile baseband modem subsystems requiring stable component supply and long-term lifecycle support.

Supply support for W63AH2NBVABE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, MCPs, and low-power DRAM for mobile and IoT markets.

W63AH2NBVABE belongs to Winbond's LPDDR3 product line designed specifically for battery-constrained portable devices demanding high bandwidth, multi-level power states, and JEDEC-compliant interoperability with leading mobile SoCs.

FAQ

What is the maximum supported data rate for W63AH2NBVABE?

W63AH2NBVABE supports a maximum data rate of 1066 MT/s, corresponding to a minimum clock period (tCK) of 0.938 ns. This is validated under VDDQ = 1.2 V and operating temperature of 25°C. The device meets all AC timing parameters in JEDEC JESD209-3B for LPDDR3-1066, including tRCD, tRP, and tRAS limits. W63AH2NBVABE must be initialized with appropriate mode register settings (e.g., MR0, MR1) to enable this speed grade.

Does W63AH2NBVABE support on-die termination (ODT)?

Yes, W63AH2NBVABE supports programmable on-die termination with Rtt_Nom values of 34 Ω, 40 Ω, and 60 Ω, configured via MR11. ODT is enabled during reads, writes, and power-down states per JEDEC specification. The ODT state is controlled by the ODT pin and mode register settings, and its I-V characteristics are calibrated using the ZQ resistor. W63AH2NBVABE does not support dynamic ODT toggling mid-burst.

What package type and dimensions does W63AH2NBVABE use?

W63AH2NBVABE uses a 136-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 10 mm × 12 mm × 0.8 mm with 0.5 mm ball pitch. It complies with JEDEC MO-261AC and is lead-free and RoHS-compliant. The ball map is documented in Section 4 ("Ball Assignment") of the official datasheet, and the mechanical drawing is provided in Section 9 ("Package Dimensions"). W63AH2NBVABE shares footprint compatibility with other 136-ball LPDDR3 x16 devices like K4E6E304EC-EGCF.

How does W63AH2NBVABE implement partial array self-refresh (PASR)?

W63AH2NBVABE implements PASR through two dedicated mode registers: MR16 (PASR Bank Mask) and MR17 (PASR Segment Mask). These allow selective disabling of up to seven of eight banks or specific row segments during self-refresh, reducing IDD6 current proportionally. Configuration is performed via MRW commands after initialization. W63AH2NBVABE does not support PASR in deep power-down mode - it is active only in self-refresh.

Is W63AH2NBVABE compatible with JEDEC LPDDR3 standard JESD209-3B?

Yes, W63AH2NBVABE fully complies with JEDEC JESD209-3B, including command encoding, timing parameters, electrical specifications, and power management states. All mandatory features - such as CA training, ZQ calibration, ODT, PASR, and deep power-down - are implemented per the standard. The device passes JEDEC conformance testing for LPDDR3-1066 operation, and W63AH2NBVABE's mode register definitions align with JESD209-3B tables for MR0–MR63.