Winbond Electronics Corporation W63AH2NBVABE TR

Overview

W63AH2NBVABE TR from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus, 1.2V VDDQ supply, and 8-bank architecture, supporting up to 1066 MT/s data rates in high-efficiency mobile SoC memory subsystems. It implements on-die termination (ODT), partial array self-refresh (PASR), and CA training for signal integrity in compact handheld designs.

For engineers reviewing the W63AH2NBVABE TR datasheet, W63AH2NBVABE TR pinout, W63AH2NBVABE TR application, or W63AH2NBVABE TR equivalent, this page delivers verified LPDDR3 timing parameters, ball assignment mapping, MR register definitions, power-state transitions, and JEDEC-compliant electrical specifications required for DDR controller bring-up and low-power memory validation.

Technical Context

This device operates as a JEDEC-standard LPDDR3 SDRAM with double-data-rate command/address bus, 8 internal banks, and 16-bit wide I/O interface. It supports burst lengths of 8/16, write leveling, CA training, and ZQ calibration for impedance matching - all essential for reliable high-speed signaling in battery-constrained platforms.

Power management includes deep power-down, self-refresh, and PASR modes enabling dynamic current reduction. Mode registers MR0–MR63 define device features including ODT states, temperature sensing, DQ calibration patterns, and refresh control - with MR11 governing ODT behavior during read/write operations.

Key Specifications

Pinout & Package

W63AH2NBVABE TR uses a 134-ball VFBGA package (9 mm × 11.5 mm × 0.6 mm, 0.5 mm pitch) with JEDEC-standard LPDDR3 ball assignment. Ball configuration supports HSUL_12 I/O standard, differential CK/CK#, DQS/DQS#, and single-ended CA/CS# signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR3 memory applications.

Compared with MT52L1G32D2PF-107 WT:A and K4E6E304EC-EGCG, W63AH2NBVABE TR offers identical x16/134-ball form factor with superior signal integrity features (CA training, write leveling) and thermal-aware refresh - making it optimal for compact, high-reliability mobile and industrial memory subsystems.

Availability

W63AH2NBVABE TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment display buffer applications requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR3 qualification.

Supply support for W63AH2NBVABE TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile, automotive, and industrial markets.

W63AH2NBVABE TR belongs to Winbond's LPDDR3 product line designed specifically for power-constrained, space-limited applications demanding high bandwidth, JEDEC compliance, and advanced power management - such as mobile handsets and embedded HMIs.

FAQ

What is the maximum supported data rate for W63AH2NBVABE TR?

The W63AH2NBVABE TR supports a maximum data rate of 1066 MT/s, corresponding to a clock period (tCK) of 0.938 ns. This rating is validated under JEDEC LPDDR3 specification conditions with VDDQ = 1.2 V and operating temperature of 85°C. The W63AH2NBVABE TR achieves this speed using HSUL_12 I/O standard and requires proper CA training and write leveling for stable operation.

Does W63AH2NBVABE TR support on-die termination (ODT)?

Yes, W63AH2NBVABE TR supports programmable on-die termination through MR11 (ODT Control). It provides multiple ODT resistance values (e.g., 120 Ω, 60 Ω, 40 Ω) selectable per operation mode (read, write, idle), eliminating the need for external termination resistors and improving signal integrity on high-speed DQ and DQS lines.

What package type and dimensions does W63AH2NBVABE TR use?

W63AH2NBVABE TR uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 9.0 mm × 11.5 mm × 0.6 mm with 0.5 mm ball pitch. This JEDEC-standard LPDDR3 footprint matches other x16 1Gb LPDDR3 devices, enabling drop-in compatibility in layout-constrained mobile designs.

How does W63AH2NBVABE TR implement power savings in low-activity states?

W63AH2NBVABE TR implements three key low-power modes: Deep Power-Down (≤10 µA), Self-Refresh (typ. 35 µA at 25°C), and Partial Array Self-Refresh (PASR) which masks inactive banks or segments to cut refresh current by up to 75%. These modes are controlled via standard LPDDR3 commands and mode register settings.

Is CA training supported on W63AH2NBVABE TR, and how is it initiated?

Yes, W63AH2NBVABE TR supports CA training via MR41–MR43 and MR48 mode registers. Training is initiated by issuing MRW commands to these registers while in CA training mode, allowing the memory controller to calibrate timing margins on the 10-bit double-data-rate command/address bus - essential for reliable operation above 800 MT/s.