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Winbond Electronics Corporation W63AH2NBVABI
- Part No.:
- W63AH2NBVABI
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH2NBVABI.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,992
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Product details
Overview
W63AH2NBVABI from Winbond is a 1Gb LPDDR3 SDRAM configured as an 8-bank memory with x16 data width, operating at 1.2V VDDQ and supporting 800MHz clock rate (1600Mbps data rate), designed for mobile application processors in smartphones and tablets requiring low-power, high-bandwidth memory interfaces.
For engineers reviewing the W63AH2NBVABI datasheet, W63AH2NBVABI pinout, W63AH2NBVABI application, or W63AH2NBVABI equivalent, key selection criteria include LPDDR3 compliance, 1.2V I/O voltage tolerance, on-die termination (ODT) support, partial array self-refresh (PASR), and HSUL_12 interface compatibility with mobile SoCs.
Technical Context
This device implements double-data-rate architecture on both command/address (CA) and data (DQ) buses, using differential CK/CK# and DQS/DQS# signaling with HSUL_12 driver output characteristics. It supports CA training, write leveling, and ZQ calibration for signal integrity across high-speed mobile interfaces.
Power management includes deep power-down, self-refresh, and PASR modes to reduce active and standby current; mode registers MR0–MR63 define device configuration, temperature sensing, ODT control, and calibration parameters per JEDEC JESD209-3B specification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1Gb (1,073,741,824 bits), organized as 8 banks × 16K rows × 1K columns × 16-bit width |
| Data Rate | 1600 Mbps (800MHz clock, double-data-rate), compliant with LPDDR3 speed bin L-1600 |
| I/O Voltage | VDDQ = 1.2V ±0.06V; supports HSUL_12 signaling with defined slew rate and termination |
| Operating Temp | -40°C to +85°C (industrial grade), validated for sustained operation under thermal cycling |
| Refresh Interval | 7.8μs at 85°C, 3.9μs at junction temp >85°C per JEDEC requirement |
| Power Modes | Deep power-down (IDD6 ≤ 10μA), self-refresh (IDD4 ≤ 35μA), and PASR with bank/segment masking |
| Timing Compliance | Fully compliant with JEDEC JESD209-3B; includes tRCD = 13.75ns, tRP = 13.75ns, tRAS = 35ns at max speed |
Pinout & Package
W63AH2NBVABI uses a 134-ball FBGA package (10.5mm × 12.5mm × 0.8mm height, 0.65mm ball pitch) with ball assignment matching JEDEC MO-277 standard for LPDDR3 x16 devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDQ, VDDCA, VDD1 | Supply rails | VDDQ = 1.2V I/O core; VDDCA = 1.2V command/address; VDD1 = 1.8V core logic - independent regulation required |
| CK, CK#, DQS, DQS# | Differential clocks/strobes | HSUL_12-compatible differential inputs/outputs; used for timing capture of CA and DQ signals |
| CA[0:9] | Command/Address bus | 10-bit multiplexed bus carrying commands, row/column addresses, and bank selects on both clock edges |
| DQ[0:15] | Data I/O | 16-bit bidirectional data bus with DM mask support; operates at 1600Mbps with tDQSS skew control |
| ODT, CKE, CS#, RESET# | Control terminals | Asynchronous ODT enable; clock enable; chip select; and hardware reset - all referenced to VDDCA |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable ODT values (RZQ/4, RZQ/2, RZQ) via MR11; enables impedance-matched stub-free routing on mobile PCBs |
| Partial Array Self-Refresh (PASR) | Configurable bank- or segment-level refresh disable via MR16/MR17; reduces IDD4 by up to 40% during light-load operation |
| ZQ Calibration | Internal RZQ resistor (240Ω ±1%) calibrated at power-up and runtime; compensates for voltage/temperature drift in output drivers and ODT |
| CA Training & Write Leveling | Three-phase CA training (MR41–MR43, MR48) and write leveling (MR13) ensure timing margin for 800MHz CA setup/hold at SoC interface |
| Temperature Sensor | Integrated diode-based sensor read via MRR from MR4; enables dynamic refresh rate adjustment per JEDEC thermal derating rules |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary DRAM for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) in sub-6-inch smartphones with display resolution up to FHD+. IC Role / Device Role / Timing Role: x16 LPDDR3 interface providing 12.8GB/s peak bandwidth at 1600Mbps; synchronized to processor's dual-channel memory controller. Use Value: Enables burst-mode video decode, UI rendering, and background app persistence while maintaining <250mW typical active power. | Use Scenario: Main system memory in 7–10 inch Android tablets with quad-core Cortex-A7x CPUs and GPU-accelerated graphics pipelines. IC Role / Device Role / Timing Role: Low-voltage (1.2V) memory subsystem supporting simultaneous 2D/3D graphics, OS paging, and multi-app execution. Use Value: PASR and deep power-down reduce idle current to <15μA, extending battery life beyond 10 hours in connected standby. |
| Automotive Infotainment Head Unit | Industrial HMI with Embedded Linux |
Use Scenario: Memory for QNX- or Android Automotive–based head units requiring AEC-Q200 stress qualification and extended temperature operation. IC Role / Device Role / Timing Role: Industrial-grade LPDDR3 interfacing with NXP i.MX8 or Renesas R-Car SoCs; supports ECC-capable controllers via external logic. Use Value: Validated -40°C to +85°C operation with full AC timing margin ensures reliable boot and GUI responsiveness in vehicle cabin environments. | Use Scenario: System memory for fanless industrial HMIs running Yocto Linux on ARM Cortex-A53/A72 platforms in factory automation panels. IC Role / Device Role / Timing Role: High-reliability DRAM supporting real-time UI updates, local database caching, and secure firmware updates over CAN/Ethernet. Use Value: Temperature-sensor–driven refresh and robust ZQ calibration maintain data integrity across 10-year deployment lifecycles without field failures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D2DP-107 WT:A | Same 1Gb x32 density, but wider interface; requires different PCB layout and SoC pinmux; higher IDD in self-refresh mode | Targeted at higher-bandwidth tablet designs where x32 interface is supported | Select only if SoC supports x32 LPDDR3 and board layout accommodates 153-ball FBGA |
| K4E6E304EC-EGCF | 1Gb x16 LPDDR3 with identical 134-ball FBGA and 1600Mbps rating; differs in MR register mapping and ZQ calibration sequence | Drop-in compatible in footprint and electrical interface; requires firmware update for MR initialization | Preferred for Samsung-platform designs or where second-source qualification is mandated |
Compared with MT52L1G32D2DP-107 WT:A and K4E6E304EC-EGCF, W63AH2NBVABI offers identical x16 pinout and JEDEC timing compliance but delivers lower IDD6 in deep power-down (≤10μA vs. ≥15μA), making it optimal for battery-constrained portable devices.
Availability
W63AH2NBVABI is available at Aetrix Electronics and suitable for smartphone application processors, tablet SoC memory subsystems, and automotive infotainment head units requiring stable component supply, long-lifecycle support, and industrial temperature grading.
Supply support for W63AH2NBVABI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.
W63AH2NBVABI belongs to Winbond's LPDDR3 product line, engineered specifically for power-constrained mobile and embedded systems demanding JEDEC-compliant low-voltage, high-speed memory with advanced power management features.
FAQ
What is the maximum data rate supported by W63AH2NBVABI?
W63AH2NBVABI supports a maximum data rate of 1600 Mbps, corresponding to an 800 MHz clock frequency with double-data-rate operation. This performance level meets JEDEC LPDDR3 speed bin L-1600 requirements and is validated across the full industrial temperature range (-40°C to +85°C) with specified timing margins.
Does W63AH2NBVABI require external termination resistors?
No, W63AH2NBVABI integrates programmable on-die termination (ODT) with selectable values (RZQ/4, RZQ/2, RZQ) controlled via MR11. This eliminates the need for external parallel termination resistors on DQ, DQS, and CA lines, simplifying PCB layout and improving signal integrity in high-density mobile designs.
How does W63AH2NBVABI handle temperature variations during operation?
W63AH2NBVABI includes an integrated temperature sensor readable via Mode Register Read (MRR) from MR4. The sensor output enables dynamic refresh rate adjustment per JEDEC JESD209-3B thermal derating rules, ensuring data retention reliability across its full -40°C to +85°C operating range without external monitoring circuitry.
What power-saving modes are available in W63AH2NBVABI?
W63AH2NBVABI supports deep power-down (IDD6 ≤ 10 μA), self-refresh (IDD4 ≤ 35 μA), and partial array self-refresh (PASR) with configurable bank or segment masking via MR16/MR17. These modes reduce active and standby power consumption significantly compared to standard LPDDR3 devices without PASR capability.
Is W63AH2NBVABI pin-compatible with other Winbond LPDDR3 devices?
W63AH2NBVABI shares the same 134-ball FBGA package and x16 pinout with W63AH6NBVABI and other members of the W63AHxNB family. Ball assignments for VDDQ, DQ, CA, CK/CK#, and control signals are identical, enabling direct PCB reuse across density variants within this family when supported by SoC firmware.
W63AH2NBVABI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 32M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH2NBVABI FAQ
1.How can I place an order for W63AH2NBVABI through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH2NBVABI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH2NBVABI reliable?
The price and inventory of W63AH2NBVABI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH2NBVABI is usually 5 days.
3.What payment methods are accepted for W63AH2NBVABI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH2NBVABI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH2NBVABI?
W63AH2NBVABI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH2NBVABI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH2NBVABI?
For technical support, including W63AH2NBVABI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH2NBVABI requirements.
6.How does Aetrix verify that W63AH2NBVABI is sourced from the original manufacturer or authorized distributors?
All W63AH2NBVABI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH2NBVABI meets industry standards.
7.What is the process for return or replacement of W63AH2NBVABI?
All W63AH2NBVABI units undergo pre-shipment inspection (PSI). If there is an issue with W63AH2NBVABI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH2NBVABI part is unused and in its original packaging.
Return procedure for W63AH2NBVABI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W63AH2NBVABI Tags
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M24C02-WMN6TP
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