Winbond Electronics Corporation W63AH2NBVABI TR

Overview

W63AH2NBVABI TR from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus, 1.2V VDDQ supply, 8-bank architecture, and support for 800–1066 MHz data rates (1600–2133 MT/s). It serves as main system memory in space-constrained mobile SoC platforms requiring low-voltage, high-bandwidth operation.

For engineers reviewing the W63AH2NBVABI TR datasheet, W63AH2NBVABI TR pinout, W63AH2NBVABI TR application, or W63AH2NBVABI TR equivalent, key selection criteria include LPDDR3-1066 timing compliance, HSUL_12 I/O interface, on-die termination (ODT), partial array self-refresh (PASR), and ZQ calibration support for signal integrity in battery-powered designs.

Technical Context

This device implements JEDEC-standard LPDDR3 protocol with dual-edge CA bus signaling, 8-bank independent activation, and programmable mode registers (MR0–MR63) for configuration of burst length, ODT states, PASR masking, temperature sensing, and CA/DQ training. It supports all mandatory LPDDR3 commands including ACTIVATE, READ/WRITE with auto-precharge, REFRESH, SELF REFRESH, DEEP POWER-DOWN, and MODE REGISTER READ/WRITE.

Electrical interface uses HSUL_12 (High-Speed Ultra-Low Voltage) for CA/CS_n/CK/CK_n and differential DQS/DQS_n, with single-ended DQ/DM signals referenced to VREF. Timing compliance covers tRCD=13.5ns, tRP=13.5ns, tRAS=35ns, and tRC=48.5ns at 1066 MT/s, with full AC parameter validation across industrial temperature range (–25°C to +85°C).

Key Specifications

Pinout & Package

W63AH2NBVABI TR is housed in a 134-ball fine-pitch FBGA (9 mm × 11.5 mm × 0.8 mm, ball pitch 0.5 mm), compliant with JEDEC MO-229VAA. Ball assignment follows standard LPDDR3 layout with dedicated HSUL_12 CA/CK/CS_n banks, differential DQS/DQS_n pairs, and single-ended DQ/DM groups.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR3 memory applications.

Compared with MT52L1G32D2PF-107 WT:A and K4E6E304EC-EGCF, W63AH2NBVABI TR offers identical x16 pinout and JEDEC LPDDR3-1066 compliance, but differs in ZQ calibration resistor tolerance (240 Ω ±1% vs. ±0.5%) and PASR segment granularity-making it optimal for cost-sensitive mobile designs where Samsung's tighter tolerance isn't required.

Availability

W63AH2NBVABI TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, wearable OS platforms, and automotive infotainment displays requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR3 performance.

Supply support for W63AH2NBVABI TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

The W63AHxNB series targets mobile SoC memory integration, delivering JEDEC LPDDR3 compliance with enhanced power efficiency, thermal robustness, and manufacturability for high-volume consumer electronics.

FAQ

What is the maximum supported data rate for W63AH2NBVABI TR?

W63AH2NBVABI TR supports up to 2133 MT/s (1066 MHz clock frequency), compliant with JEDEC LPDDR3-1066 specifications. This is validated across the full industrial temperature range (–25°C to +85°C) and requires proper CA/DQ training and ZQ calibration to maintain timing margins at speed.

Does W63AH2NBVABI TR support on-die termination (ODT)?

Yes, W63AH2NBVABI TR supports programmable on-die termination via MR11, enabling dynamic ODT enable/disable for DQ, DQS, and CA lines. This eliminates the need for external termination resistors and improves signal integrity during high-speed reads and writes without altering PCB layout.

What package type and dimensions does W63AH2NBVABI TR use?

W63AH2NBVABI TR uses a 134-ball fine-pitch FBGA package measuring 9.0 mm × 11.5 mm × 0.8 mm with 0.5 mm ball pitch. The ball map conforms to JEDEC MO-229VAA and is mechanically and electrically compatible with standard LPDDR3 x16 socket footprints.

How does W63AH2NBVABI TR implement power savings in standby mode?

W63AH2NBVABI TR provides three low-power states: Self Refresh (IDD6), Deep Power-Down (IDD8), and Partial Array Self-Refresh (PASR). PASR reduces self-refresh current by up to 75% by masking inactive banks or segments-configurable via MR16/MR17-making it ideal for battery-constrained wearables.

Is W63AH2NBVABI TR compatible with standard LPDDR3 controllers?

Yes, W63AH2NBVABI TR implements full JEDEC JESD209-3B LPDDR3 compliance, including command encoding, timing parameters, mode register definitions (MR0–MR63), CA/DQ training sequences, and ZQ calibration flow. It has been validated with major mobile SoC controllers including MediaTek MT67xx and Qualcomm Snapdragon 4xx series.