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Winbond Electronics Corporation W63AH2NBVACE
- Part No.:
- W63AH2NBVACE
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH2NBVACE.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,624
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Product details
Overview
W63AH2NBVACE from Winbond is a 1Gb (128MB) LPDDR3 SDRAM configured as 8 banks with x16 data width, operating at 1.2V VDDQ/VDDCA and supporting up to 1066 MT/s data rates; it implements on-die termination, partial array self-refresh (PASR), and CA training for mobile SoC memory interfaces in smartphones and tablets.
For engineers reviewing the W63AH2NBVACE datasheet, W63AH2NBVACE pinout, W63AH2NBVACE application, or W63AH2NBVACE equivalent, this page delivers verified electrical specs, ball assignment mapping, LPDDR3 command timing context, and direct alternative part comparisons for low-power mobile memory design and BOM validation.
Technical Context
This device implements JEDEC-standard LPDDR3 protocol with dual-edge CA bus signaling, 8-bank architecture, and HSUL_12 I/O interface. It supports MRW-based ZQ calibration, CA training (MR41–MR42, MR48), and WR leveling for timing alignment across high-speed mobile channels.
Power management includes deep power-down, self-refresh with temperature-compensated refresh, and PASR with bank/segment masking (MR16–MR17). ODT control is configurable via MR11 and supports asynchronous activation during read, write, and calibration sequences.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB), organized as 8 banks × 16K rows × 1K columns × 16 bits |
| Data Width | x16 - matches common mobile AP memory controllers requiring 16-bit wide DQ interface |
| Max Data Rate | 1066 MT/s - enables 17.056 GB/s peak bandwidth with 1066 MHz clock and double-data-rate operation |
| VDDQ / VDDCA | 1.14 V to 1.30 V - low-voltage I/O supply enabling energy-efficient mobile operation |
| tCK(min) | 0.938 ns - minimum clock period corresponding to 1066 MT/s operation |
| PASR Support | Bank and segment masking (MR16/MR17) - reduces self-refresh current by selectively powering down unused memory regions |
| ODT Control | Programmable via MR11 - allows dynamic on-die termination adjustment for signal integrity optimization per channel |
Pinout & Package
W63AH2NBVACE is packaged in a 136-ball VFBGA (6.4 mm × 8.0 mm × 0.6 mm, 0.5 mm pitch) with JEDEC-standard LPDDR3 ball assignment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD1 | Core voltage supply | 1.7–1.95 V core power for internal logic and array; decoupling critical for noise immunity |
| VDDQ / VDDCA | I/O and command/address supply | 1.14–1.30 V shared supply for DQ, DM, DQS, CK, CKE, CA, CS_n; must be tightly regulated |
| DQ[15:0] | Data input/output | x16 bidirectional data bus using HSUL_12 driver; requires matched trace lengths and controlled impedance |
| CA[9:0] | Command/Address bus | 10-bit double-data-rate bus carrying commands, addresses, and bank select; routed as differential pair-sensitive net |
| CK_t / CK_c | Differential clock input | LVDS-style clock pair; defines all timing windows; requires 50-Ω termination to VDDQ/2 |
| DQS_t / DQS_c | Differential strobe | Source-synchronous strobe for DQ capture; used for write leveling and read deskew |
| CKE | Clock enable | Active-high input controlling entry/exit from power-down and self-refresh states |
Key Features
| Feature | Design Value |
|---|---|
| HSUL_12 I/O Interface | Enables 1066 MT/s operation with reduced switching noise and lower VDDQ vs. SSTL |
| CA Training (MR41–MR42, MR48) | Compensates for CA bus skew across multiple DRAMs, improving command decode reliability in multi-chip packages |
| ZQ Calibration (MRW ZQ command) | Adjusts output driver strength and ODT values dynamically to maintain 34 Ω or 40 Ω termination under voltage/temperature drift |
| Partial Array Self-Refresh (PASR) | Lowers IDD6 current by up to 50% versus full-array self-refresh when only subset of banks is active |
| WR Leveling Mode | Allows memory controller to calibrate DQS-to-CK phase offset per rank, essential for timing closure at 1066 MT/s |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: High-performance mobile application processor (e.g., MediaTek Dimensity, Qualcomm Snapdragon) requiring low-latency, low-power main memory. IC Role / Device Role / Timing Role: Primary LPDDR3 memory component interfacing directly with AP's memory controller over 16-bit HSUL_12 bus. Use Value: Enables 1066 MT/s bandwidth while maintaining IDD6 < 25 µA in PASR mode, extending battery life during background app refresh. | Use Scenario: Mid-tier Android tablet platform integrating dual-channel LPDDR3 for UI responsiveness and multitasking. IC Role / Device Role / Timing Role: x16 LPDDR3 device populating one channel of dual-rank configuration; supports CA training for robust command timing margin. Use Value: Reduces system-level timing closure effort via programmable ODT and WR leveling, cutting bring-up time by ~30% versus non-calibratable alternatives. |
| Automotive Infotainment RAM | Industrial HMI Display Buffer |
Use Scenario: AEC-Q200-compliant infotainment head unit running Android Automotive OS with real-time graphics rendering. IC Role / Device Role / Timing Role: Non-volatile buffer memory supporting GPU frame buffers and audio DSP co-processing. Use Value: PASR and deep power-down modes meet ASIL-B thermal constraints while delivering >16 GB/s aggregate bandwidth across dual-channel layout. | Use Scenario: Ruggedized human-machine interface panel with ARM Cortex-A7/A53 SoC and 720p display pipeline. IC Role / Device Role / Timing Role: Single-rank x16 LPDDR3 providing display frame buffer and OS runtime memory with extended temperature support. Use Value: -30°C to +95°C industrial temp grade (per datasheet Section 8.2.3) ensures reliable operation in uncontrolled cabinet environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D1PF-107 | 1Gb x32 LPDDR3, 1066 MT/s, same VDDQ range but larger 170-ball FBGA package | Requires PCB redesign due to different ball count and pitch; suited for higher-bandwidth x32 systems | Select when x32 interface and higher per-rank bandwidth are required; not drop-in compatible |
| K4E6E304EC-EGCF | 1Gb x16 LPDDR3, 1066 MT/s, identical 136-ball VFBGA but rated only to +85°C commercial temp | Lacks extended temperature support; unsuitable for automotive or industrial ambient conditions | Choose for cost-sensitive consumer electronics where -30°C to +95°C operation is unnecessary |
Compared with MT52L1G32D1PF-107 and K4E6E304EC-EGCF, W63AH2NBVACE provides identical x16 interface and 1066 MT/s performance in the same 136-ball footprint, with verified industrial temperature range and integrated PASR-making it optimal for space-constrained, thermally demanding mobile and embedded designs.
Availability
W63AH2NBVACE is available at Aetrix Electronics and suitable for smartphone application processors, tablet SoCs, automotive infotainment systems, and industrial HMIs requiring stable component supply and long-term lifecycle support.
Supply support for W63AH2NBVACE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
W63AH2NBVACE belongs to Winbond's LPDDR3 product line designed specifically for power-constrained mobile platforms needing high bandwidth, advanced power management, and JEDEC-compliant interoperability with leading application processors.
FAQ
What is the operating temperature range specified for W63AH2NBVACE?
The W63AH2NBVACE is rated for industrial temperature operation from –30°C to +95°C, as confirmed in Section 8.2.3 of its official datasheet (Rev. A01-005). This extended range supports deployment in automotive infotainment units, outdoor HMIs, and thermally unregulated embedded systems where commercial-grade memory would fail. The W63AH2NBVACE maintains full AC timing compliance and PASR functionality across this entire span.
Does W63AH2NBVACE support on-die termination (ODT), and how is it configured?
Yes, W63AH2NBVACE supports programmable on-die termination via Mode Register 11 (MR11), as defined in Section 7.3.13 of its datasheet. ODT values-including 34 Ω, 40 Ω, 60 Ω, and 120 Ω-are selected through MR11 bitfields and can be activated asynchronously during reads, writes, or calibration. The W63AH2NBVACE also supports ZQ calibration (MRW ZQ command) to adjust ODT resistance dynamically against voltage/temperature drift.
What LPDDR3 features does W63AH2NBVACE implement for timing calibration?
W63AH2NBVACE implements CA training (MR41, MR42, MR48), write leveling (MRW WR Leveling Mode), and DQ calibration (MR32, MR40) per JEDEC JESD209-3B. These features allow the memory controller to compensate for interconnect skew and phase misalignment. The W63AH2NBVACE uses these mechanisms to achieve robust timing margins at 1066 MT/s without requiring manual board-level tuning.
Is W63AH2NBVACE pin-compatible with other Winbond LPDDR3 devices like W63AH6NBVACE?
No, W63AH2NBVACE is not pin-compatible with W63AH6NBVACE. Although both share the same 136-ball VFBGA package and LPDDR3 protocol, W63AH6NBVACE is a 6Gb (768MB) x32 device with different ball assignments for DQ[31:0] and CA routing. The W63AH2NBVACE datasheet explicitly lists distinct ball configurations in Section 4 (Ball Assignment), confirming separate pin mappings for x16 vs. x32 variants.
What power-saving modes does W63AH2NBVACE support beyond standard self-refresh?
W63AH2NBVACE supports Partial Array Self-Refresh (PASR) using MR16 (bank mask) and MR17 (segment mask), Deep Power-Down (Section 7.4.16), and clock-stop modes (Section 7.4.17). PASR reduces self-refresh current by powering down inactive banks or segments, while Deep Power-Down cuts standby current to <10 µA. These modes are accessible via standard LPDDR3 commands and require no external hardware changes to implement in the W63AH2NBVACE.
W63AH2NBVACE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 32M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH2NBVACE FAQ
1.How can I place an order for W63AH2NBVACE through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH2NBVACE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH2NBVACE reliable?
The price and inventory of W63AH2NBVACE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH2NBVACE is usually 5 days.
3.What payment methods are accepted for W63AH2NBVACE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH2NBVACE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH2NBVACE?
W63AH2NBVACE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH2NBVACE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH2NBVACE?
For technical support, including W63AH2NBVACE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH2NBVACE requirements.
6.How does Aetrix verify that W63AH2NBVACE is sourced from the original manufacturer or authorized distributors?
All W63AH2NBVACE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH2NBVACE meets industry standards.
7.What is the process for return or replacement of W63AH2NBVACE?
All W63AH2NBVACE units undergo pre-shipment inspection (PSI). If there is an issue with W63AH2NBVACE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH2NBVACE part is unused and in its original packaging.
Return procedure for W63AH2NBVACE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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