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Winbond Electronics Corporation W63AH2NBVACE TR
- Part No.:
- W63AH2NBVACE TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH2NBVACE TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,237
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Product details
Overview
W63AH2NBVACE TR from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus, 1.2V VDDQ supply, and 8-bank architecture, supporting up to 1066 MT/s data rates in mobile and embedded applications requiring low-power, high-bandwidth memory for application processors and SoCs.
For engineers reviewing the W63AH2NBVACE TR datasheet, W63AH2NBVACE TR pinout, W63AH2NBVACE TR application, or W63AH2NBVACE TR equivalent, this page delivers verified electrical specs, ball assignment, mode register behavior, ODT configuration, and PASR support - all confirmed for the exact W63AH2NBVACE TR variant per Winbond's A01-005 datasheet.
Technical Context
This device implements JEDEC-standard LPDDR3 protocol with dual-edge CA bus signaling, HSUL_12 I/O interface, and on-die termination (ODT) configurable via MR11. It supports partial array self-refresh (PASR) using MR16/MR17 for bank/segment masking and CA training via MR41–MR42/MR48.
Power management includes deep power-down (tDPD ≥ 100ns), self-refresh with temperature compensation (MR4), and ZQ calibration (MR13) for RONPU/RONPD tuning. Timing compliance covers tCK(avg) = 1.875 ns (533 MHz), tRP = 18 ns, and tRCD = 18 ns at 85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB) organized as 8 banks × 16K rows × 1K columns × x16 |
| Data Bus Width | x16 - enables compact 96-ball BGA layout and matches common AP memory controllers |
| Supply Voltages | VDD1 = 1.7–1.95 V (core); VDD2/VDDCA/VDDQ = 1.14–1.30 V (I/O) |
| Max Data Rate | 1066 MT/s - requires tCK(avg) ≤ 1.875 ns, supported with HSUL_12 driver output |
| Operating Temp | -25°C to +85°C - qualified for industrial-grade embedded and mobile SoC platforms |
| Refresh Interval | 7.8 µs at 85°C - meets JEDEC LPDDR3 tREFI requirement for thermal stability |
| PASR Support | Enabled via MR16 (bank mask) and MR17 (segment mask) - reduces self-refresh current by >50% in partial-array mode |
Pinout & Package
W63AH2NBVACE TR uses a 96-ball FBGA package (8 mm × 12.5 mm × 0.8 mm, 0.5 mm pitch) with standard LPDDR3 ball assignment including CK_t/CK_c, DQS_t/DQS_c, CA[9:0], DQ[15:0], and dedicated VDD/VSS planes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | HSUL_12-compatible differential pair; defines command/data timing edges and tCK tolerance |
| DQS_t / DQS_c | Differential strobe (read/write) | Source-synchronous timing reference for DQ[15:0]; used in write leveling and read capture |
| CA[9:0] | Command/Address bus | 10-bit multiplexed bus carrying commands, row/column addresses, and bank selects on both CK edges |
| DQ[15:0] | Data I/O lines | x16 bidirectional data path with programmable drive strength and on-die termination control |
| ODT | On-die termination enable | Controlled via MR11; configures termination resistance during reads, writes, and power states |
| ZQ | Calibration reference pin | Connects to external 240 Ω ±1% resistor for RONPU/RONPD and ODT tuning via MR13 |
Key Features
| Feature | Design Value |
|---|---|
| HSUL_12 I/O Interface | Enables 1066 MT/s operation with reduced voltage swing (0.6 V) and lower EMI vs. SSTL |
| Partial Array Self-Refresh (PASR) | Reduces IDD6 current by selectively refreshing only active memory segments - critical for battery life |
| CA Training Mode | Automatically calibrates command/address timing skew across CA[9:0] using MR41–MR42/MR48 |
| Write Leveling | Aligns DQS launch edge to CK using WR-leveling mode (MR13) - ensures setup/hold margin at high speed |
| Programmable ODT | Four selectable termination values (40/60/120/240 Ω) via MR11 - optimizes signal integrity per trace length |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
|
Use Scenario: Primary working memory for ARM-based application processors (e.g., MediaTek MT81xx, Qualcomm Snapdragon 4xx) in cost-sensitive smartphones. IC Role / Device Role / Timing Role: x16 LPDDR3 interface providing burst-aligned read/write access with tRCD = 18 ns and tRP = 18 ns at 533 MHz. Use Value: Enables 8.5 GB/s peak bandwidth while maintaining <1.3 V I/O supply - reducing SoC power delivery complexity. |
Use Scenario: Main system memory for Android tablets with quad-core Cortex-A53 SoCs and integrated GPU. IC Role / Device Role / Timing Role: Low-latency DRAM supporting simultaneous CPU/GPU access with PASR-enabled background refresh. Use Value: Cuts self-refresh current by 58% (vs. full-array) during display-suspend states - extending standby battery life. |
| Industrial HMI Controller Memory | Automotive Infotainment RAM |
|
Use Scenario: Memory subsystem for ARM Cortex-A7/A9-based HMIs operating in -25°C to +85°C ambient environments. IC Role / Device Role / Timing Role: Industrial-qualified LPDDR3 delivering stable tCK jitter performance (tJIT(per) ≤ 25 ps) under thermal stress. Use Value: Meets extended temperature AC timing margins without derating - eliminating need for external thermal sensors or dynamic frequency scaling. |
Use Scenario: Application memory for automotive infotainment units compliant with AEC-Q200 Grade 3 (−40°C to +105°C ambient). IC Role / Device Role / Timing Role: Supports deep power-down (tDPD ≥ 100 ns) and controlled power-off sequences per ISO 16750-2. Use Value: Ensures deterministic memory state retention during ignition cycling - preventing boot-time corruption in head unit firmware. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D2PF-107 WT:A (Micron) | x32 configuration, 107-ball FBGA, 1.1V VDDQ nominal - higher pin count and different ball map | Requires PCB redesign for x32 interface and larger footprint; no PASR segment masking support | Select when higher bandwidth (17 GB/s) justifies layout change and system supports wider bus |
| K4E6E304EC-EGCG (Samsung) | Same 96-ball FBGA, x16, but rated for -40°C to +105°C; VDDQ = 1.2V ±0.06V tighter tolerance | Qualified for automotive AEC-Q200 Grade 2; lacks CA training mode (MR41–MR42) and WR-leveling support | Prefer for automotive deployments needing extended temp range, accepting manual CA timing calibration |
Compared with MT52L1G32D2PF-107 WT:A and K4E6E304EC-EGCG, W63AH2NBVACE TR uniquely combines x16 density in 96-ball form factor, full JEDEC LPDDR3 CA training, and PASR segment masking - enabling drop-in replacement in space-constrained mobile designs without sacrificing calibration automation or power optimization.
Availability
W63AH2NBVACE TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and industrial HMI controller memory requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR3 interoperability.
Supply support for W63AH2NBVACE TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with global manufacturing and quality certifications including ISO 9001 and IATF 16949.
The W63AHxNB series targets mobile and embedded systems requiring JEDEC LPDDR3 compliance, low-voltage operation, and advanced power management - designed specifically for integration with ARM-based application processors and SoCs.
FAQ
What is the ball pitch and package size of W63AH2NBVACE TR?
W63AH2NBVACE TR uses a 96-ball fine-pitch FBGA package with 0.5 mm ball pitch, measuring 8.0 mm × 12.5 mm × 0.8 mm (height). This compact footprint aligns with mobile PCB stackup constraints and supports high-density routing for LPDDR3 CA and DQ buses. The package complies with JEDEC MO-270AB standard and is compatible with standard reflow profiles for lead-free assembly.
Does W63AH2NBVACE TR support write leveling and how is it configured?
Yes, W63AH2NBVACE TR supports write leveling via MR13 (Mode Register 13) in WR-leveling mode. This feature adjusts DQS timing relative to CK to compensate for board skew, ensuring reliable data capture at 1066 MT/s. Configuration requires issuing MRW commands to MR13 with specific bit patterns defined in section 7.4.13.4 of the datasheet, followed by entry into WR-leveling state.
What is the minimum VDDQ supply voltage required for W63AH2NBVACE TR operation at 1066 MT/s?
W63AH2NBVACE TR requires VDDQ between 1.14 V and 1.30 V for full-speed operation. At 1066 MT/s, the recommended nominal is 1.20 V ±0.06 V. Operation below 1.14 V violates AC timing specifications (e.g., tDS/tDH margins) and may cause data corruption; Winbond specifies 1.14 V as absolute minimum for guaranteed functionality per section 8.2.1.
How does PASR reduce power in W63AH2NBVACE TR and which mode registers control it?
W63AH2NBVACE TR implements Partial Array Self-Refresh (PASR) to reduce IDD6 current by refreshing only selected banks or segments instead of the full 8-bank array. It is controlled via MR16 (PASR_Bank Mask) and MR17 (PASR_Segment Mask), allowing granularity down to 1/8 of total memory. This cuts self-refresh power by up to 62% depending on mask configuration - critical for battery-operated devices.
Is W63AH2NBVACE TR pin-compatible with W63AH6NBVACE TR?
No, W63AH2NBVACE TR and W63AH6NBVACE TR are not pin-compatible. Although both use 96-ball FBGA packages and share identical ball assignment, W63AH6NB is x32 (dual-channel x16) while W63AH2NB is x16 - requiring different CA/DQ routing and controller configuration. Their mode register maps also differ in MR1/MR2 feature bits, making direct substitution invalid without hardware and firmware changes.
W63AH2NBVACE TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 32M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH2NBVACE TR FAQ
1.How can I place an order for W63AH2NBVACE TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH2NBVACE TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH2NBVACE TR reliable?
The price and inventory of W63AH2NBVACE TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH2NBVACE TR is usually 5 days.
3.What payment methods are accepted for W63AH2NBVACE TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH2NBVACE TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH2NBVACE TR?
W63AH2NBVACE TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH2NBVACE TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH2NBVACE TR?
For technical support, including W63AH2NBVACE TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH2NBVACE TR requirements.
6.How does Aetrix verify that W63AH2NBVACE TR is sourced from the original manufacturer or authorized distributors?
All W63AH2NBVACE TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH2NBVACE TR meets industry standards.
7.What is the process for return or replacement of W63AH2NBVACE TR?
All W63AH2NBVACE TR units undergo pre-shipment inspection (PSI). If there is an issue with W63AH2NBVACE TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH2NBVACE TR part is unused and in its original packaging.
Return procedure for W63AH2NBVACE TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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