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Winbond Electronics Corporation W63AH2NBVACI TR
- Part No.:
- W63AH2NBVACI TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH2NBVACI TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,282
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Product details
Overview
W63AH2NBVACI TR from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus, 1.2V VDDQ supply, and 8-bank architecture, supporting up to 1066 MT/s data rates in high-efficiency mobile SoC memory subsystems for smartphones and tablets.
For engineers reviewing the W63AH2NBVACI TR datasheet, W63AH2NBVACI TR pinout, W63AH2NBVACI TR application, or W63AH2NBVACI TR equivalent, key selection criteria include LPDDR3-1066 timing compliance, HSUL_12 I/O interface, on-die termination (ODT), partial array self-refresh (PASR), and ZQ calibration support for signal integrity in space-constrained portable designs.
Technical Context
This device implements JEDEC-standard LPDDR3 protocol with dual-edge CA bus signaling, 10-bit command/address multiplexing, and synchronous burst access. It supports all mandatory LPDDR3 commands including ACTIVATE, READ/WRITE with auto-precharge, REFRESH, SELF REFRESH, DEEP POWER-DOWN, and mode register operations (MR0–MR63).
It features programmable ODT states (Rtt_Nom, Rtt_WR), CA training and write leveling sequences, temperature-sensing MR4, and PASR bank/segment masking (MR16/MR17) - enabling dynamic power optimization during low-activity display or background processing phases in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 M × 16-bit organization) |
| Data Bus Width | x16 - matches common mobile AP memory controller interfaces without lane doubling |
| Supply Voltages | VDD1 = 1.7–1.95 V; VDD2/VDDCA/VDDQ = 1.14–1.30 V - enables low-power operation with separate core/I/O rails |
| Max Data Rate | 1066 MT/s - supports LPDDR3-1066 timing bin with tCK = 0.938 ns minimum clock period |
| Operating Temperature | -40°C to +85°C - qualified for industrial-grade mobile and embedded applications |
| I/O Standard | HSUL_12 - provides 1.2 V pseudo-differential signaling with controlled slew and impedance matching |
| Refresh Interval | 7.8 µs at 85°C - meets JEDEC LPDDR3 thermal refresh requirements for reliable data retention |
Pinout & Package
W63AH2NBVACI TR uses a 134-ball FBGA package (10 mm × 12 mm × 0.8 mm height, 0.65 mm ball pitch) compliant with JEDEC MO-229WAYA. Ball assignment follows standard LPDDR3 layout with dedicated VDD/VSS groups, HSUL_12 DQ/DM/DQS pairs, differential CK_t/CK_c and DQS_t/DQS_c, and multiplexed 10-bit CA bus.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O (x16) | Bidirectional HSUL_12 data lines; support burst lengths of 8 or 16 with read/write masking |
| DM0–DM1 | Data Mask | Byte-level write mask for DQ[7:0] and DQ[15:8]; active-high during WRITE commands |
| DQS0_t / DQS0_c | Differential Strobe | Source-synchronous read/write strobe pair referenced to DQ; used for timing capture and leveling |
| CK_t / CK_c | Differential Clock | System reference clock input; both edges sample CA bus; defines tCK timing base |
| CA0–CA9 | Multiplexed Command/Address | 10-bit bus carrying row/column/bank commands and address bits on CK rising/falling edges |
| CS_n | Chip Select | Active-low command enable; sampled on CK rising edge to initiate command decoding |
| CKE | Clock Enable | Asynchronous gate for internal clock domain; controls power-down entry/exit and self-refresh activation |
| ZQ | Calibration Reference | External 240 Ω ±1% resistor connection point for RONPU/RONPD and ODT impedance calibration |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable Rtt_Nom (60/120/240 Ω) and Rtt_WR (60/120 Ω) via MR11 - eliminates external termination resistors and reduces PCB routing complexity |
| Partial Array Self-Refresh (PASR) | Configurable bank/segment masking (MR16/MR17) - cuts self-refresh current by >50% when only subset of memory is active |
| ZQ Calibration | One-time or periodic calibration of output driver (RONPU/RONPD) and ODT impedances using external ZQ resistor - maintains signal integrity across voltage/temperature drift |
| CA Training & Write Leveling | MR41–MR48-supported training sequences - compensates for CA bus skew and DQS-to-clock alignment errors in high-speed layouts |
| Deep Power-Down Mode | Reduces IDD6 to ≤10 µA - extends battery life during extended idle periods while preserving memory state |
Applications
| Smartphone Application | Tablet System Memory |
|---|---|
Use Scenario: Main system memory for application processor in mid-tier Android smartphones with 2–4 GB total RAM configuration. IC Role / Device Role / Timing Role: LPDDR3-1066 x16 channel memory device providing burst-accessed code/data storage with sub-10ns tRCD/tRP timing. Use Value: Enables 1066 MT/s bandwidth within 1.2V I/O constraints, reducing SoC memory controller power while maintaining UI responsiveness and app launch speed. |
Use Scenario: Primary memory in 7–10 inch tablets requiring low standby power and thermal efficiency. IC Role / Device Role / Timing Role: Dual-rank-capable LPDDR3 component supporting multi-threaded OS workloads and GPU frame buffering. Use Value: PASR and Deep Power-Down modes reduce average system current by ~35% during video playback or sleep, extending battery runtime beyond 10 hours. |
| Automotive Infotainment | Industrial HMI Display |
Use Scenario: Memory subsystem for automotive-grade infotainment head units operating across -40°C to +85°C ambient. IC Role / Device Role / Timing Role: Industrial-temperature LPDDR3 SDRAM interfacing directly with NXP i.MX8 or Renesas R-Car SoCs. Use Value: Full JEDEC LPDDR3 compliance and extended temp rating ensure functional safety during cold cranking and hot soak conditions without refresh failure. |
Use Scenario: Embedded HMI in factory automation panels with fanless cooling and long-life design targets. IC Role / Device Role / Timing Role: High-reliability memory supporting deterministic real-time response for PLC-linked GUI updates. Use Value: ZQ calibration and CA training maintain timing margin over 10+ year field life despite voltage droop and board aging effects. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D1PF-107 WT:A | 1Gb x32 LPDDR3, 1066 MT/s, same VDDQ range but larger 146-ball FBGA (12×14 mm) | Requires PCB redesign for wider bus and different footprint; suited for higher-bandwidth SoCs needing x32 interface | Select when system demands full 32-bit data path and has layout margin for larger package |
| K4E6E304EC-EGCJ | 1Gb x16 LPDDR3, 1066 MT/s, identical 134-ball FBGA but rated only to +70°C commercial temp | Lacks industrial temperature qualification; unsuitable for automotive or extended-temp industrial use | Choose only for cost-sensitive consumer electronics where -40°C to +85°C is not required |
Compared with MT52L1G32D1PF-107 WT:A and K4E6E304EC-EGCJ, W63AH2NBVACI TR uniquely delivers x16 LPDDR3-1066 performance in an industrial-qualified 134-ball FBGA with full PASR, ZQ, and CA training support - making it optimal for space-constrained, thermally demanding mobile and embedded platforms where reliability and signal integrity are non-negotiable.
Availability
W63AH2NBVACI TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet platform designs, and automotive infotainment systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant LPDDR3 interoperability.
Supply support for W63AH2NBVACI TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile, automotive, and industrial markets.
W63AH2NBVACI TR belongs to Winbond's LPDDR3 product line engineered specifically for energy-efficient, high-density mobile memory applications where thermal management, signal integrity, and JEDEC compliance are critical design constraints.
FAQ
What is the maximum supported data rate for W63AH2NBVACI TR?
W63AH2NBVACI TR supports up to 1066 MT/s, corresponding to a minimum clock period (tCK) of 0.938 ns per JEDEC LPDDR3 specification. This data rate is achievable under specified VDDQ = 1.2V ±3%, temperature ≤85°C, and proper CA/DQ timing alignment verified via MR41–MR48 training sequences. The W63AH2NBVACI TR datasheet defines all AC timing parameters-including tRCD, tRP, and tRAS-at this speed grade.
Does W63AH2NBVACI TR support on-die termination (ODT)?
Yes, W63AH2NBVACI TR supports programmable ODT via MR11, offering Rtt_Nom values of 60 Ω, 120 Ω, or 240 Ω and Rtt_WR values of 60 Ω or 120 Ω. These settings apply to DQ, DQS, and DM pins during reads/writes and are essential for impedance matching in high-speed layouts. ODT states are configurable independently for nominal and write operations to optimize signal integrity across varying load conditions.
What package type and dimensions does W63AH2NBVACI TR use?
W63AH2NBVACI TR uses a 134-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 10 mm × 12 mm × 0.8 mm with 0.65 mm ball pitch, per JEDEC MO-229WAYA. This compact industrial-grade package supports automated SMT assembly and thermal dissipation up to 85°C ambient. Pinout follows standard LPDDR3 layout with dedicated VDD/VSS banks, HSUL_12 DQ/DQS groups, and multiplexed CA bus.
How does W63AH2NBVACI TR implement partial array self-refresh (PASR)?
W63AH2NBVACI TR implements PASR through mode registers MR16 (PASR Bank Mask) and MR17 (PASR Segment Mask), allowing software to selectively disable refresh for unused banks or segments. When enabled, PASR reduces self-refresh current (IDD6) by up to 60% compared to full-array refresh-critical for extending battery life in always-on display or background service scenarios. Configuration requires host-initiated MRW commands after initialization.
Is ZQ calibration required for W63AH2NBVACI TR operation?
Yes, ZQ calibration is required for W63AH2NBVACI TR to maintain output driver (RONPU/RONPD) and ODT impedance accuracy across voltage and temperature variations. The device supports one-time calibration at power-up and optional periodic recalibration via MRW command to ZQ register (MA[7:0] = 2AH). A 240 Ω ±1% external resistor must be connected to the ZQ pin; deviation beyond tolerance invalidates calibrated impedance values.
W63AH2NBVACI TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 32M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH2NBVACI TR FAQ
1.How can I place an order for W63AH2NBVACI TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH2NBVACI TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH2NBVACI TR reliable?
The price and inventory of W63AH2NBVACI TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH2NBVACI TR is usually 5 days.
3.What payment methods are accepted for W63AH2NBVACI TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH2NBVACI TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH2NBVACI TR?
W63AH2NBVACI TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH2NBVACI TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH2NBVACI TR?
For technical support, including W63AH2NBVACI TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH2NBVACI TR requirements.
6.How does Aetrix verify that W63AH2NBVACI TR is sourced from the original manufacturer or authorized distributors?
All W63AH2NBVACI TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH2NBVACI TR meets industry standards.
7.What is the process for return or replacement of W63AH2NBVACI TR?
All W63AH2NBVACI TR units undergo pre-shipment inspection (PSI). If there is an issue with W63AH2NBVACI TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH2NBVACI TR part is unused and in its original packaging.
Return procedure for W63AH2NBVACI TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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