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Winbond Electronics Corporation W63AH2NBVADE
- Part No.:
- W63AH2NBVADE
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH2NBVADE.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,828
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Product details
Overview
W63AH2NBVADE from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus, 1.2V VDDQ supply, 8-bank architecture, and support for 800–1066 MT/s data rates in mobile and embedded applications requiring low-power, high-bandwidth memory.
For engineers reviewing the W63AH2NBVADE datasheet, W63AH2NBVADE pinout, W63AH2NBVADE application, or W63AH2NBVADE equivalent, key selection criteria include LPDDR3 JEDEC compliance, on-die termination (ODT), partial array self-refresh (PASR), CA training capability, and HSUL_12 I/O interface timing.
Technical Context
This device implements JEDEC-standard LPDDR3 protocol with dual-edge command/address transfer on a 10-bit CA bus, enabling reduced pin count versus DDR3. It supports burst lengths of 8 and 16, auto-precharge, and programmable mode registers for configuration of ODT, PASR, calibration, and temperature sensing.
Power management includes deep power-down, self-refresh, and power-down modes with controlled entry/exit sequences. Timing control relies on CK/CK# differential clocks and DQS/DQS# strobes, with ZQ calibration for output driver and ODT resistance tuning across voltage and temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB) organized as 8 banks × 16K rows × 1K columns × x16 |
| Data Rate | Up to 1066 MT/s (533 MHz clock, double-data-rate) |
| Supply Voltages | VDD1 = 1.7–1.95 V; VDD2/VDDCA/VDDQ = 1.14–1.30 V |
| I/O Interface | HSUL_12 standard with differential CK/CK#, DQS/DQS#, and single-ended CA bus |
| Refresh Support | Auto-refresh (tREFI = 3.9 µs at 85°C), self-refresh, and partial array self-refresh (PASR) |
| Timing Compliance | JEDEC JESD209-3B LPDDR3 specification, including CA training and write leveling |
| Operating Temp | -25°C to +85°C (commercial grade) |
Pinout & Package
W63AH2NBVADE uses a 134-ball VFBGA package (9 mm × 12 mm × 0.8 mm height, 0.5 mm ball pitch) with ball assignment defined per JEDEC MO-245AC. Pin functions follow LPDDR3 standard layout for x16 configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD1, VDD2, VDDQ, VSS | Power/Ground | Dedicated supplies for core, CA, and I/O domains; separate ground planes minimize noise coupling |
| CK_t / CK_c | Differential Clock Input | Primary timing reference for all commands and data transfers; requires matched trace length and controlled impedance |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous read/write strobe aligned to DQ edges; enables precise timing capture at receiver |
| CA[0:9] | Command/Address Bus | 10-bit multiplexed bus carrying commands, row/column addresses, and bank selects on both CK edges |
| DQ[0:15] | Data I/O | x16 bidirectional data bus using HSUL_12 signaling; supports burst lengths of 8 or 16 |
| DM[0:1] | Data Mask | Per-byte mask signals for write operations; suppresses selected byte lanes during burst writes |
| ODT | On-Die Termination Control | Dynamic enable/disable of internal termination resistors on DQ/DQS lines to match line impedance |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces refresh current up to 75% by selectively refreshing only active memory segments, extending battery life in mobile standby |
| CA Training Mode | Enables automatic compensation for CA bus skew via MR41–MR43, improving setup/hold margin at high speeds |
| ZQ Calibration | Adjusts output driver strength (RONPU/RONPD) and ODT values dynamically using external 240 Ω ±1% resistor |
| HSUL_12 I/O Standard | Provides 1.2 V low-voltage swing with fast edge rates and low EMI-optimized for high-speed mobile PCB routing |
| Temperature Sensor (MR4) | Reports die temperature via MRR command (MA[7:0] = 04H), enabling thermal-aware system power management |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) in smartphones. IC Role / Device Role / Timing Role: LPDDR3 SDRAM providing low-latency, burst-access memory for CPU/GPU instruction and data caching. Use Value: 1066 MT/s bandwidth and PASR reduce SoC power consumption during background tasks without sacrificing performance. | Use Scenario: Dedicated frame buffer and texture memory for Mali or PowerVR GPUs in Android tablets. IC Role / Device Role / Timing Role: High-throughput x16 memory interface synchronized to GPU memory controller with CA training for signal integrity. Use Value: HSUL_12 I/O and tight tDQSS/tDQSCK timing enable reliable 533 MHz operation under thermally constrained tablet chassis. |
| Automotive Infotainment RAM | Industrial HMI Display Controller Memory |
Use Scenario: System memory for QNX- or Android Automotive–based head units with real-time UI responsiveness requirements. IC Role / Device Role / Timing Role: JEDEC-compliant LPDDR3 supporting automotive-grade thermal range (−25°C to +85°C) and robust CA bus timing. Use Value: Deep power-down mode and self-refresh retention allow infotainment systems to maintain state during ignition-off periods. | Use Scenario: Memory for ARM Cortex-A series display controllers in factory HMIs with fanless enclosures. IC Role / Device Role / Timing Role: Low-power x16 SDRAM interfaced to FPGA or ASIC memory controller with ZQ calibration for long-term stability. Use Value: On-die termination and programmable ODT settings simplify PCB design and eliminate external termination components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D2PF-107 | 1Gb x32 LPDDR3, 1066 MT/s, same VDDQ range, but larger 144-ball VFBGA package | Requires board redesign due to different ball count, pitch, and x32 interface; higher bandwidth but lower density efficiency | Select when system memory controller supports x32 and board layout allows larger footprint |
| K4E6E304EC-EGCF | 1Gb x16 LPDDR3, 1066 MT/s, identical 134-ball VFBGA, but Samsung-specific CA training implementation | Same mechanical fit and electrical interface; minor MR register mapping differences require firmware adaptation | Choose for drop-in replacement where existing Samsung ecosystem tooling and initialization code are already validated |
Compared with MT52L1G32D2PF-107 and K4E6E304EC-EGCF, W63AH2NBVADE offers identical x16 134-ball form factor and JEDEC LPDDR3 compliance, but with Winbond's optimized PASR granularity and simplified MR10/MR11 ODT control-making it ideal for space-constrained, thermally sensitive mobile designs.
Availability
W63AH2NBVADE is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, and automotive infotainment systems requiring stable component supply and long-lifecycle support.
Supply support for W63AH2NBVADE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with global manufacturing and quality certifications including ISO 9001 and IATF 16949.
The W63AHxNB family targets mobile and embedded platforms needing JEDEC-compliant LPDDR3 with enhanced power efficiency, thermal resilience, and signal integrity features for next-generation portable devices.
FAQ
What is the operating voltage range for W63AH2NBVADE?
W63AH2NBVADE operates with VDD1 at 1.7–1.95 V for core logic and VDD2/VDDCA/VDDQ at 1.14–1.30 V for I/O and command/address circuits. This dual-voltage architecture enables power optimization across functional domains while maintaining JEDEC LPDDR3 compatibility. The specified ranges are validated across temperature and process corners per the Dec. 2019 datasheet revision A01-003.
Does W63AH2NBVADE support on-die termination (ODT)?
Yes, W63AH2NBVADE supports programmable on-die termination through MR11 (MA[7:0] = 0BH), allowing dynamic configuration of ODT resistance values for DQ and DQS lines during reads, writes, and power states. This eliminates the need for external termination resistors and improves signal integrity on high-speed memory interfaces.
What package type and dimensions does W63AH2NBVADE use?
W63AH2NBVADE uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 9 mm × 12 mm × 0.8 mm with 0.5 mm ball pitch. The ball assignment follows JEDEC MO-245AC and is documented in Section 4 ("Ball Assignment") of the official datasheet.
How does W63AH2NBVADE implement partial array self-refresh (PASR)?
W63AH2NBVADE implements PASR via MR16 (bank masking) and MR17 (segment masking), allowing selective refresh of only active memory regions. This reduces IDD6 current by up to 75% compared to full-array self-refresh, directly extending battery runtime in mobile standby modes without compromising data retention.
Is CA training supported on W63AH2NBVADE?
Yes, W63AH2NBVADE supports CA training through MR41–MR43 (MA[7:0] = 29H–2BH), enabling automatic delay calibration of the 10-bit command/address bus to compensate for inter-symbol skew and PCB trace mismatch at 1066 MT/s operation.
W63AH2NBVADE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 32M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 1.066 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH2NBVADE FAQ
1.How can I place an order for W63AH2NBVADE through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH2NBVADE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH2NBVADE reliable?
The price and inventory of W63AH2NBVADE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH2NBVADE is usually 5 days.
3.What payment methods are accepted for W63AH2NBVADE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH2NBVADE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH2NBVADE?
W63AH2NBVADE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH2NBVADE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH2NBVADE?
For technical support, including W63AH2NBVADE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH2NBVADE requirements.
6.How does Aetrix verify that W63AH2NBVADE is sourced from the original manufacturer or authorized distributors?
All W63AH2NBVADE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH2NBVADE meets industry standards.
7.What is the process for return or replacement of W63AH2NBVADE?
All W63AH2NBVADE units undergo pre-shipment inspection (PSI). If there is an issue with W63AH2NBVADE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH2NBVADE part is unused and in its original packaging.
Return procedure for W63AH2NBVADE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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