Winbond Electronics Corporation W63AH2NBVADI

Overview

W63AH2NBVADI from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus width, operating at 1.2V VDDQ/VDDCA and supporting up to 1066 MT/s data rates. It features 8 internal banks, on-die termination (ODT), partial array self-refresh (PASR), and CA training for high-speed mobile memory interfaces in space-constrained applications.

For engineers reviewing the W63AH2NBVADI datasheet, W63AH2NBVADI pinout, W63AH2NBVADI application, or W63AH2NBVADI equivalent, this device is selected for low-power, high-bandwidth memory subsystems in portable SoC designs requiring JEDEC-compliant LPDDR3 timing, voltage scaling, and power-state management including Deep Power-Down and Self Refresh.

Technical Context

This LPDDR3 device implements a double-data-rate architecture on both the DQ and CA buses, enabling command and address transfer on both clock edges to minimize pin count. It supports burst lengths of 8 and 16, with configurable CAS latency (CL = 11–15) and write latency (WL = 6–10) per JEDEC JESD209-3B.

Power management includes four low-power states: Power-Down, Deep Power-Down, Self Refresh, and Partial Array Self-Refresh. Calibration support covers ZQ, DQ, and CA training-critical for signal integrity at 533 MHz clock frequency (1066 MT/s) and sub-1.3V I/O supply.

Key Specifications

Pinout & Package

W63AH2NBVADI is housed in a 96-ball fine-pitch ball grid array (FBGA) package measuring 9.0 mm × 13.0 mm × 1.0 mm (height), compliant with JEDEC MO-276AA. Ball pitch is 0.5 mm, and the package uses Pb-free, RoHS-compliant terminations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR3 memory applications.

Compared with MT52L1G32D2PF-107 WT:A and K4E6E304EC-EGCJ, W63AH2NBVADI offers optimal balance of x16 footprint efficiency, extended temperature support, and active power management features - making it preferred for thermally constrained, battery-operated, and automotive-qualified designs.

Availability

W63AH2NBVADI is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head units requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant LPDDR3 interoperability.

Supply support for W63AH2NBVADI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash storage, and trusted computing solutions, with over 30 years of DRAM design heritage.

W63AH2NBVADI belongs to Winbond's LPDDR3 product line engineered specifically for mobile and embedded systems demanding low-voltage operation, advanced power states, and JEDEC-standard compliance - targeting space- and power-constrained SoC platforms.

FAQ

What is the maximum supported data rate for W63AH2NBVADI?

W63AH2NBVADI supports up to 1066 MT/s, corresponding to a minimum clock period (tCK) of 0.938 ns per JEDEC LPDDR3 specification. This speed bin is validated across the full operating temperature range (–25°C to +85°C) and requires proper CA training, write leveling, and ZQ calibration to maintain timing margins at 533 MHz clock frequency.

Does W63AH2NBVADI support x32 data width configuration?

No, W63AH2NBVADI is a fixed x16 data width device. The "W63AH2NB" part number denotes the x16 variant; the related W63AH6NB is the x32 version. Pinout, mode register settings, and electrical characteristics differ between the two, and they are not interchangeable on the same PCB layout.

What package type and dimensions does W63AH2NBVADI use?

W63AH2NBVADI uses a 96-ball FBGA package (JEDEC MO-276AA) measuring 9.0 mm × 13.0 mm × 1.0 mm with 0.5 mm ball pitch. It is Pb-free and RoHS-compliant, and the ball map is defined in Section 4 ("Ball Assignment") of the official datasheet revision A01-005.

How does PASR function in W63AH2NBVADI, and which mode registers control it?

PASR in W63AH2NBVADI is controlled via mode registers MR16 (PASR Bank Mask) and MR17 (PASR Segment Mask), allowing selective self-refresh of active memory regions only. This reduces IDD6 current by up to 50% compared to full-array self-refresh - confirmed in Section 7.4.11 and Table 8.4.2.2 of the datasheet.

Is W63AH2NBVADI compatible with LPDDR4 controllers?

No, W63AH2NBVADI is strictly LPDDR3-compliant and incompatible with LPDDR4 controllers. It lacks LPDDR4-specific features including VREFDQ tracking, write CRC, and new command encodings. Attempting to operate it with an LPDDR4 controller will result in initialization failure or undefined behavior due to fundamental protocol and electrical differences.