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Winbond Electronics Corporation W63AH2NBVADI TR
- Part No.:
- W63AH2NBVADI TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH2NBVADI TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,310
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Product details
Overview
W63AH2NBVADI TR from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus, 1.2V VDDQ supply, 8-bank architecture, and support for 800–1066 MT/s data rates in HSUL_12 I/O interface; used as main memory in mobile SoC platforms requiring low-power, high-bandwidth DRAM.
For engineers reviewing the W63AH2NBVADI TR datasheet, W63AH2NBVADI TR pinout, W63AH2NBVADI TR application, or W63AH2NBVADI TR equivalent, key selection criteria include LPDDR3 JEDEC compliance, HSUL_12 signaling, on-die termination (ODT), partial array self-refresh (PASR), and ZQ calibration support for signal integrity in space-constrained portable designs.
Technical Context
This device implements JEDEC-standard LPDDR3 protocol with dual-edge CA bus clocking, 8-bank independent activation, and command encoding across CK/CK#, CA[9:0], and CS_n. It supports burst lengths of 8 and 16, auto-precharge, and programmable mode registers (MR0–MR63) for configuration of timing, ODT, PASR, and calibration.
Power management includes deep power-down, self-refresh, and partial array self-refresh modes; electrical interface uses HSUL_12 I/O standard with differential CK/DQS, single-ended CA/CS_n, and calibrated output drivers (RONPU/RONPD) referenced to external 240Ω ZQ resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB) organized as 8 banks × 16K rows × 1K columns × 16 bits |
| Data Bus Width | x16 - enables compact 16-bit memory subsystems without data multiplexing |
| Max Data Rate | 1066 MT/s - delivers up to 17.056 GB/s peak bandwidth with 1066 MHz clock |
| VDDQ Supply Range | 1.14 V to 1.30 V - optimized for low-voltage mobile SoC I/O domains |
| I/O Standard | HSUL_12 - high-speed ultra-low voltage with 1.2 V reference, enabling <10 ps jitter tolerance |
| Refresh Mode | Self-refresh and Partial Array Self-Refresh (PASR) - reduces active current by masking unused banks/segments |
| Calibration Support | ZQ calibration, CA training, write leveling, DQ calibration - ensures signal integrity across PVT variations |
Pinout & Package
W63AH2NBVADI TR is packaged in a 136-ball VFBGA (6.4 mm × 8.0 mm × 0.6 mm, 0.5 mm pitch) with ball grid layout conforming to JEDEC MO-229WEAA.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | Edge-aligned timing reference for all commands and data transfers; requires matched trace length and 100 Ω differential termination |
| DQS_t / DQS_c | Differential strobe | Source-synchronous read/write strobe aligned to DQ edges; used for dynamic timing capture in high-speed interfaces |
| CA[9:0] | Command/Address bus | 10-bit double-data-rate bus carrying row/column/bank addresses and command codes on both CK edges |
| DQ[15:0] | Data I/O | 16-bit bidirectional data bus using HSUL_12 signaling; supports burst lengths of 8 or 16 |
| CS_n | Chip select | Active-low enable for command decoding; sampled on CK rising edge to initiate command execution |
| CKE | Clock enable | Asynchronous control that gates internal clock domain; low = power-down entry, high = normal operation |
| ZQ | Calibration reference | Connects to external 240 Ω ±1% resistor for factory and runtime RONPU/RONPD and ODT impedance calibration |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable ODT levels (Rtt_Nom, Rtt_WR, Rtt_Park) via MR11; eliminates need for external termination resistors on DQ/DQS lines |
| Partial Array Self-Refresh (PASR) | Configurable bank- or segment-level refresh disable via MR16/MR17; cuts self-refresh current by up to 50% when only subset of memory is active |
| HSUL_12 I/O Interface | 1.2 V reference voltage with tight slew rate control; achieves <10 ps period jitter tolerance at 1066 MT/s |
| ZQ Calibration | One-time factory and periodic runtime calibration of output driver (RONPU/RONPD) and ODT impedances against 240 Ω reference |
| CA Training Mode | Three-phase training (MR41–MR48) aligns CA timing to CK under PVT variation; required before stable command decode at max speed |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Integrated into application processor memory subsystems (e.g., Qualcomm Snapdragon, MediaTek Dimensity) where board space and power are constrained. IC Role / Device Role / Timing Role: Primary LPDDR3 memory providing low-latency, high-bandwidth access to CPU/GPU/NPU cores. Use Value: Enables 1066 MT/s operation with PASR and deep power-down to extend battery life while maintaining full performance during active use. | Use Scenario: Used as main system memory in 7–10 inch tablets with ARM-based SoCs and Android OS. IC Role / Device Role / Timing Role: x16 LPDDR3 DRAM supporting burst-8/16 reads/writes synchronized to HSUL_12 strobes and CA bus. Use Value: Reduces PCB layer count via compact VFBGA package and eliminates external termination components through programmable ODT. |
| Automotive Infotainment RAM | Industrial HMI Display Controller Memory |
Use Scenario: Deployed in automotive-grade infotainment head units operating across –40°C to +85°C ambient range. IC Role / Device Role / Timing Role: JEDEC-compliant LPDDR3 memory supporting AEC-Q100 stress testing and thermal-aware refresh scheduling. Use Value: Maintains data integrity under wide temperature swings via MR4 temperature sensor readout and adaptive refresh intervals. | Use Scenario: Embedded in industrial human-machine interface controllers with ARM Cortex-A series processors and Linux RTOS. IC Role / Device Role / Timing Role: Low-power DRAM supporting deterministic real-time response with self-refresh and write-leveling calibration. Use Value: Ensures reliable boot and UI rendering via CA training and write leveling-critical for zero-defect field deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D2PF-107 WT:A | 1Gb x32 LPDDR3, 1066 MT/s, same VDDQ range but wider 178-ball FBGA package | Requires PCB redesign due to different ball count, pitch, and x32 interface; not drop-in compatible | Select when x32 bus width and higher aggregate bandwidth are needed; verify routing compatibility with larger footprint |
| K4E6E304EC-EGCF | 1Gb x16 LPDDR3, 1066 MT/s, identical VFBGA-136 package and pinout per JEDEC standard | Direct pin-to-pin replacement with matching CA/DQ/CK assignments and HSUL_12 support | Preferred for second-source qualification where identical mechanical and electrical integration is required |
Compared with W63AH2NBVADI TR, MT52L1G32D2PF-107 WT:A offers x32 bandwidth but demands layout changes, while K4E6E304EC-EGCF provides true pin-compatible redundancy with identical timing, calibration, and thermal behavior-making it the most seamless alternative for continuity planning.
Availability
W63AH2NBVADI TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment RAM requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR3 performance.
Supply support for W63AH2NBVADI TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and DRAM solutions for mobile, automotive, and industrial markets.
The W63AHxNB family targets mobile and embedded systems needing JEDEC LPDDR3 compliance, ultra-low power consumption, and high reliability in compact VFBGA packages-designed specifically for integration with application processors in battery-powered devices.
FAQ
What is the operating temperature range for W63AH2NBVADI TR?
The W63AH2NBVADI TR is rated for industrial temperature operation from –40°C to +85°C. This range is validated per JEDEC JESD22-A104 and supported by internal temperature sensor (MR4 readout) and adaptive refresh logic. The device maintains full AC timing specifications across this range, making W63AH2NBVADI TR suitable for automotive infotainment and ruggedized industrial HMI applications where thermal stability is critical.
Does W63AH2NBVADI TR support ZQ calibration, and how is it implemented?
Yes, W63AH2NBVADI TR supports both factory and runtime ZQ calibration via MRW command to MR13. It uses an external 240 Ω ±1% resistor connected to the ZQ pin to calibrate output driver impedance (RONPU/RONPD) and ODT values. Calibration adjusts for process, voltage, and temperature drift, ensuring consistent signal integrity at 1066 MT/s. This capability is essential for reliable high-speed operation in W63AH2NBVADI TR deployments.
Is W63AH2NBVADI TR pin-compatible with other LPDDR3 devices in the same density class?
W63AH2NBVADI TR follows JEDEC MO-229WEAA standard for 136-ball VFBGA, and its pinout matches industry-standard x16 LPDDR3 layouts-including K4E6E304EC-EGCF. Ball assignments for CK, DQS, DQ, CA, CS_n, CKE, and ZQ are functionally identical. However, always verify MR register mapping and timing parameters, as minor differences in calibration sequences or PASR implementation may require firmware adaptation even with physical pin compatibility in W63AH2NBVADI TR integration.
What burst lengths does W63AH2NBVADI TR support, and how are they selected?
W63AH2NBVADI TR supports burst lengths of 8 and 16, configured via MR0[1:0] (BL). Burst type is fixed as sequential (not interleaved). BL=00 selects burst-8; BL=01 selects burst-16. These settings determine the number of consecutive DQ transfers per READ/WRITE command and directly impact bus efficiency and latency. The choice affects controller FIFO depth and memory controller timing margin-both validated in W63AH2NBVADI TR's AC timing tables for 800–1066 MT/s operation.
How does Partial Array Self-Refresh (PASR) work in W63AH2NBVADI TR?
PASR in W63AH2NBVADI TR allows selective refresh of only active memory regions via MR16 (bank mask) and MR17 (segment mask). Each bit controls one bank or 1/8th of a bank, reducing self-refresh current proportionally. For example, enabling only 4 of 8 banks cuts IDD6 current by ~40%. This feature is critical for extending battery life in always-on display or audio buffer scenarios-where full-array refresh is unnecessary-and is fully configurable in W63AH2NBVADI TR without hardware modification.
W63AH2NBVADI TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 32M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 1.066 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH2NBVADI TR FAQ
1.How can I place an order for W63AH2NBVADI TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH2NBVADI TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH2NBVADI TR reliable?
The price and inventory of W63AH2NBVADI TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH2NBVADI TR is usually 5 days.
3.What payment methods are accepted for W63AH2NBVADI TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH2NBVADI TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH2NBVADI TR?
W63AH2NBVADI TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH2NBVADI TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH2NBVADI TR?
For technical support, including W63AH2NBVADI TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH2NBVADI TR requirements.
6.How does Aetrix verify that W63AH2NBVADI TR is sourced from the original manufacturer or authorized distributors?
All W63AH2NBVADI TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH2NBVADI TR meets industry standards.
7.What is the process for return or replacement of W63AH2NBVADI TR?
All W63AH2NBVADI TR units undergo pre-shipment inspection (PSI). If there is an issue with W63AH2NBVADI TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH2NBVADI TR part is unused and in its original packaging.
Return procedure for W63AH2NBVADI TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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