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Winbond Electronics Corporation W63AH6NBVABE
- Part No.:
- W63AH6NBVABE
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH6NBVABE.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,045
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Product details
Overview
W63AH6NBVABE from Winbond is a 1Gb (128MB) LPDDR3 SDRAM configured as 8 banks with x16 data bus width, operating at 1.2V VDDQ and supporting 800MHz data rate (1600MT/s), designed for mobile and portable applications requiring low-power memory with high bandwidth.
For engineers reviewing the W63AH6NBVABE datasheet, W63AH6NBVABE pinout, W63AH6NBVABE application, or W63AH6NBVABE equivalent, this page delivers verified LPDDR3 timing parameters, ball assignment, ODT configuration, PASR support, and ZQ calibration behavior specific to the W63AH6NBVABE variant in FBGA-134 package.
Technical Context
This device implements JEDEC-standard LPDDR3 protocol with dual-edge CA bus signaling, on-die termination (ODT) controlled via MR11, and partial array self-refresh (PASR) configurable through MR16/MR17. It supports CA training (MR41–MR42, MR48), write leveling (MRW WR Leveling Mode), and DQ calibration (MR32, MR40).
Power management includes Deep Power-Down (tDPD ≥ 100ns), Self Refresh (tRFC = 210ns min), and programmable refresh intervals. Voltage domains are segregated: VDD1 (1.7–1.95V core), VDD2/VDDCA/VDDQ (1.14–1.30V I/O), with VREF = 0.6 × VDDQ and HSUL_12 driver output standard.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1Gb (128MB), organized as 8 banks × 16K rows × 1K columns × 16-bit |
| Data Rate | 1600 MT/s (800MHz clock), enabling 3.2GB/s peak bandwidth on x16 interface |
| VDDQ Operating Range | 1.14V to 1.30V - defines I/O voltage tolerance and must be stable within ±3% during operation |
| tCK(min) | 1.25ns - minimum clock period limiting maximum sustained transfer rate |
| tRFC | 210ns (at 85°C) - refresh cycle time determining minimum refresh interval and power overhead |
| PASR Support | Configurable bank/segment masking (MR16/MR17) - reduces self-refresh current by disabling unused memory arrays |
| ZQ Calibration | Supported via MRW command (MR43) - adjusts RONPU/RONPD output impedance to match 240Ω external ZQ resistor |
Pinout & Package
W63AH6NBVABE is packaged in a 134-ball FBGA (Fine-Pitch Ball Grid Array) with 0.5mm pitch, 8.0mm × 11.5mm body size, and standard LPDDR3 ball assignment per JEDEC JESD209-3. Ball layout follows 10-bit CA bus + 16-bit DQ + DQS/DQSN + control signals (CK/CK#, CKE, CS#, CA[9:0], DM[1:0]).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | LVDS-compatible differential pair; tCK(avg) = 1.25ns min defines system timing budget |
| CA[9:0] | Command/Address Bus | 10-bit multiplexed bus transferring commands/addresses on both CK edges; requires CA training (MR41–MR42) |
| DQ[15:0] | Data I/O | x16 bidirectional data bus using HSUL_12 drivers; supports burst lengths of 8 or 16 |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous strobe for DQ read/write capture; tDQSS = ±0.25UI alignment critical for setup/hold |
| DM[1:0] | Data Mask | Per-byte mask for write operations; active-high, sampled on DQS rising edge |
| VDDQ / VDD2 / VDDCA | I/O Power Supply | Shared 1.14–1.30V domain powering DQ, DQS, CA, and DM; requires local decoupling |
| VDD1 | Core Power Supply | 1.7–1.95V domain powering internal logic and banks; independent from I/O supply |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable via MR11; supports RTT_NOM = 40/60/120Ω and RTT_WR = 60/120Ω for signal integrity optimization |
| Partial Array Self-Refresh (PASR) | Reduces IDD6 current up to 50% by masking inactive banks/segments (MR16/MR17), extending battery life in mobile standby |
| CA Training & Write Leveling | Enables robust high-speed interface tuning: CA training aligns command timing; write leveling calibrates DQS-to-CK skew |
| ZQ Calibration | One-time or periodic impedance calibration against external 240Ω resistor to maintain RONPU/RONPD accuracy across voltage/temperature |
| Deep Power-Down Mode | Enters ultra-low-current state (IDD7 ≤ 10µA) after tDPD ≥ 100ns; exits in tXPD ≤ 500ns |
Applications
| Smartphone Application | Tablet System Memory |
|---|---|
Use Scenario: Main application memory in mid-tier Android smartphones with ARM Cortex-A53/A55 SoCs. IC Role / Device Role / Timing Role: LPDDR3 SDRAM providing 3.2GB/s bandwidth to SoC memory controller via 16-bit bus. Use Value: Enables smooth UI rendering and multitasking while maintaining sub-40mA IDD0 (active) and <5µA IDD6 (PASR-enabled standby). | Use Scenario: Primary memory in 7–10 inch tablets running lightweight Linux or Chrome OS. IC Role / Device Role / Timing Role: x16 LPDDR3 interface synchronized to 800MHz clock with CA training for reliable boot and firmware execution. Use Value: Supports fast resume-from-sleep (<10ms wake latency) using Deep Power-Down mode and calibrated ODT for noise immunity. |
| Automotive Infotainment | Portable Medical Monitor |
Use Scenario: Display buffer and application cache in automotive head units compliant with AEC-Q100 Grade 3. IC Role / Device Role / Timing Role: High-reliability LPDDR3 memory operating across –40°C to +85°C with validated tRFC margin and thermal-aware refresh. Use Value: Ensures deterministic frame buffering under temperature cycling via MR4_DevTemp readback and PASR segment masking during low-activity states. | Use Scenario: Real-time waveform storage and processing buffer in handheld ECG or pulse oximetry devices. IC Role / Device Role / Timing Role: Low-power memory storing 10+ seconds of sampled sensor data before wireless upload. Use Value: Achieves >12-hour battery life using Deep Power-Down between acquisitions and ZQ-calibrated DQ drive strength for clean analog-domain interfacing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D2PF-107 WT:A | 1Gb x32 LPDDR3, 107-ball FBGA, 1.2V VDDQ, supports 1866MT/s; no PASR segment masking (MR17 not implemented) | Requires wider PCB trace routing due to x32 interface; higher bandwidth but less flexible power gating | Select when system demands >3.2GB/s bandwidth and SoC supports x32 interface |
| K4E6E304EC-EGCJ | 1Gb x16 LPDDR3, 134-ball FBGA, 1.2V VDDQ, 1600MT/s; supports same PASR and ZQ features but uses different CA training sequence (MR41 only) | Compatible pinout and timing, but requires SoC-specific CA training firmware adaptation | Select when migrating from Samsung platform designs with existing CA training infrastructure |
Compared with MT52L1G32D2PF-107 WT:A and K4E6E304EC-EGCJ, W63AH6NBVABE offers identical x16 FBGA-134 footprint and PASR granularity, but uniquely supports dual-phase CA training (MR41/MR42/MR48) and extended MR63 reset functionality - advantageous for SoCs requiring fine-grained initialization control.
Availability
W63AH6NBVABE is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet SoC reference designs, and automotive infotainment modules requiring stable component supply and long-term LPDDR3 compatibility.
Supply support for W63AH6NBVABE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, RAM, and trusted computing ICs.
The W63AH series is Winbond's LPDDR3 product line targeting mobile, portable, and automotive applications where low-voltage operation, power-aware refresh, and JEDEC-compliant interoperability are essential.
FAQ
What is the operating voltage range for W63AH6NBVABE VDDQ?
W63AH6NBVABE operates with VDDQ between 1.14V and 1.30V, as specified in the DC operating conditions table. This range applies to all I/O circuits including DQ, DQS, CA, and DM. Operation outside this window may cause timing violations or data corruption. The device requires tight regulation (±3%) and proper decoupling per JEDEC LPDDR3 layout guidelines. W63AH6NBVABE does not support 1.8V or 3.3V I/O interfaces.
Does W63AH6NBVABE support partial array self-refresh (PASR)?
Yes, W63AH6NBVABE supports PASR via Mode Registers MR16 (bank mask) and MR17 (segment mask). This feature allows selective disabling of memory banks or segments during self-refresh to reduce IDD6 current by up to 50%. Configuration is performed using MRW commands after initialization. W63AH6NBVABE implements full PASR functionality as defined in JEDEC JESD209-3, unlike some LPDDR3 variants that omit MR17 support.
What package type and ball count does W63AH6NBVABE use?
W63AH6NBVABE uses a 134-ball Fine-Pitch Ball Grid Array (FBGA) package with 0.5mm pitch and 8.0mm × 11.5mm body dimensions. The ball assignment matches JEDEC-standard LPDDR3 layout for x16 configuration, including dedicated CK/CK#, CA[9:0], DQ[15:0], DQS/DQSN, DM[1:0], and control signals. This package is compatible with standard LPDDR3 reflow profiles and automated optical inspection.
How is on-die termination (ODT) configured on W63AH6NBVABE?
ODT on W63AH6NBVABE is configured through Mode Register MR11. Valid settings include RTT_NOM = 40Ω, 60Ω, or 120Ω for read termination, and RTT_WR = 60Ω or 120Ω for write termination. ODT states are controlled synchronously with command decode and can be enabled/disabled per access. Asynchronous ODT is not supported. W63AH6NBVABE requires external 240Ω ZQ resistor for RONPU/RONPD calibration to ensure ODT accuracy across voltage and temperature.
Is W63AH6NBVABE pin-compatible with W63AH2NBVABE?
Yes, W63AH6NBVABE and W63AH2NBVABE share identical FBGA-134 package, ball assignment, and pin functions. Both devices implement the same LPDDR3 protocol stack and register map. The primary difference is density: W63AH6NBVABE is 1Gb x16, while W63AH2NBVABE is 512Mb x16. They are interchangeable at the PCB level, though firmware must configure appropriate row/column/bank addressing and refresh timing based on actual density.
W63AH6NBVABE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH6NBVABE FAQ
1.How can I place an order for W63AH6NBVABE through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH6NBVABE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH6NBVABE reliable?
The price and inventory of W63AH6NBVABE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH6NBVABE is usually 5 days.
3.What payment methods are accepted for W63AH6NBVABE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH6NBVABE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH6NBVABE?
W63AH6NBVABE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH6NBVABE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH6NBVABE?
For technical support, including W63AH6NBVABE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH6NBVABE requirements.
6.How does Aetrix verify that W63AH6NBVABE is sourced from the original manufacturer or authorized distributors?
All W63AH6NBVABE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH6NBVABE meets industry standards.
7.What is the process for return or replacement of W63AH6NBVABE?
All W63AH6NBVABE units undergo pre-shipment inspection (PSI). If there is an issue with W63AH6NBVABE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH6NBVABE part is unused and in its original packaging.
Return procedure for W63AH6NBVABE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W63AH6NBVABE Tags
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