Winbond Electronics Corporation W63AH6NBVABE TR

Overview

W63AH6NBVABE TR from Winbond is a 1Gb (128MB) LPDDR3 SDRAM configured as 8 banks with x16 data width, operating at 1.2V VDDQ and supporting 800–1066 MT/s data rates. It implements on-die termination (ODT), partial array self-refresh (PASR), and CA training for high-speed mobile memory interfaces in smartphones and tablets.

For engineers reviewing the W63AH6NBVABE TR datasheet, W63AH6NBVABE TR pinout, W63AH6NBVABE TR application, or W63AH6NBVABE TR equivalent, key selection criteria include LPDDR3 JEDEC compliance, 1.2V I/O voltage tolerance, 178-ball BGA package with HSUL_12 signaling, and support for burst lengths of 8/16 with write-leveling and ZQ calibration.

Technical Context

This device implements JEDEC-standard LPDDR3 protocol with dual-edge command/address bus, 8-bank architecture, and programmable mode registers (MR0–MR63) for configuration of timing, ODT, PASR, temperature sensing, and calibration. It supports both synchronous and asynchronous ODT control across read/write, power-down, and self-refresh states.

Electrical operation requires separate VDD1 (1.7–1.95V core), VDD2/VDDCA/VDDQ (1.14–1.30V I/O), and VSSQ reference planes. Timing compliance includes tCK(avg) = 1.875 ns (533 MHz), tRCD = 13.5 ns, tRP = 13.5 ns, and tRFC = 160 ns at 85°C, with jitter specifications defined per JEDEC JESD209-3B.

Key Specifications

Pinout & Package

W63AH6NBVABE TR uses a 178-ball fine-pitch FBGA package (12 mm × 12 mm, 0.65 mm ball pitch) with HSUL_12 I/O interface and dedicated VDDQ/VSSQ planes for signal integrity. Ball assignment follows JEDEC MO-229WAA standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR3 memory applications.

Compared with MT52L1G32D1PF-107 WT:A and K4E6E304EC-EGCG, W63AH6NBVABE TR delivers superior power efficiency via PASR and more robust high-speed signaling via CA training and programmable ODT-critical for thermally constrained, battery-powered systems.

Availability

W63AH6NBVABE TR is available at Aetrix Electronics and suitable for smartphone main memory, tablet system memory, and automotive infotainment applications requiring stable component supply and long-term manufacturability.

Supply support for W63AH6NBVABE TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

The W63AH series targets JEDEC LPDDR3-compliant mobile platforms, emphasizing power efficiency, signal integrity, and thermal adaptability for space-constrained portable electronics.

FAQ

What is the ball count and package type of W63AH6NBVABE TR?

W63AH6NBVABE TR uses a 178-ball fine-pitch FBGA package (12 mm × 12 mm, 0.65 mm pitch) compliant with JEDEC MO-229WAA. This package supports high-density routing and thermal dissipation required for LPDDR3 in compact mobile PCBs. The W63AH6NBVABE TR ball map includes dedicated VDDQ/VSSQ planes and differential CK/DQS pairs to maintain signal integrity at 1066 MT/s.

Does W63AH6NBVABE TR support on-die termination (ODT)?

Yes, W63AH6NBVABE TR supports programmable on-die termination via MR11, allowing dynamic configuration of RONPU and RONPD values. This eliminates the need for external termination resistors on DQ and DQS lines, reducing BOM cost and PCB area. The W63AH6NBVABE TR ODT remains active during read operations, power-down, self-refresh, and CA training sequences per JEDEC LPDDR3 specification.

What is the maximum supported data rate for W63AH6NBVABE TR?

W63AH6NBVABE TR supports up to 1066 MT/s (megatransfers per second), corresponding to a clock period (tCK) of 1.875 ns at 533 MHz. This data rate is validated across the full operating temperature range (-25°C to +85°C) and VDDQ range (1.14 V to 1.30 V). The W63AH6NBVABE TR achieves this using HSUL_12 I/O drivers and CA training to compensate for interconnect skew.

How does W63AH6NBVABE TR implement partial array self-refresh (PASR)?

W63AH6NBVABE TR implements PASR through mode registers MR16 (bank mask) and MR17 (segment mask), enabling selective refresh of active memory regions only. This reduces self-refresh current (IDD6) by up to 50% compared to full-array refresh. The W63AH6NBVABE TR PASR function is software-configurable and maintains JEDEC timing compliance without requiring changes to host controller logic.

Is W63AH6NBVABE TR compatible with JEDEC LPDDR3 standard JESD209-3B?

Yes, W63AH6NBVABE TR fully complies with JEDEC JESD209-3B, including command encoding, timing parameters (tRCD, tRP, tRFC), electrical characteristics (HSUL_12 signaling, VREF tolerances), and functional features like CA training, ZQ calibration, and temperature-sensor MRR. All W63AH6NBVABE TR test conditions and AC timings are specified per JESD209-3B Annex A and B requirements.