Winbond Electronics Corporation W63AH6NBVABI
- Part No.:
- W63AH6NBVABI
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH6NBVABI.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:157
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Product details
Overview
W63AH6NBVABI from Winbond is a 1Gb (128MB) LPDDR3 SDRAM configured as 8 banks × 16M × 16-bit, operating at 1.2V VDDQ/VDDCA with 800MHz data rate (1600MT/s), supporting burst lengths of 8/16 and on-die termination for mobile SoC memory interfaces in smartphones and tablets.
For engineers reviewing the W63AH6NBVABI datasheet, W63AH6NBVABI pinout, W63AH6NBVABI application, or W63AH6NBVABI equivalent, key selection criteria include LPDDR3-1600 timing compliance, x16 data width, PASR support, ZQ calibration capability, and -40°C to +85°C industrial temperature grade.
Technical Context
This device implements JEDEC-standard LPDDR3 protocol with dual-edge CA bus signaling, 8-bank architecture, and programmable mode registers (MR0–MR63) for configuration of burst length, ODT states, PASR masking, CA training, and write leveling. It supports self-refresh, deep power-down, and partial array self-refresh to reduce dynamic and standby power.
Timing control includes tCK(avg) = 1.25ns (800MHz), tRP = 18ns, tRCD = 18ns, tRAS = 42ns, and tRFC = 160ns (8Gb density scaling). Electrical interface uses HSUL_12 I/O standard with differential CK/DQS and single-ended CA/CS_n, requiring external 240Ω ±1% ZQ resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1Gb (128MB), organized as 8 banks × 16M words × 16 bits |
| Data Rate | 1600 MT/s (800MHz clock, double-data-rate) |
| Supply Voltages | VDD1 = 1.7–1.95V; VDD2/VDDCA/VDDQ = 1.14–1.30V (nominal 1.2V) |
| Operating Temperature | -40°C to +85°C (industrial grade) |
| Burst Length | Configurable 8 or 16 (BL8/BL16), fixed for read/write operations |
| Refresh Interval | 7.8µs average refresh cycle (tREFI), with extended tRFC up to 350ns for low-power modes |
| I/O Standard | HSUL_12 compliant, differential CK/DQS, single-ended CA/CS_n, VREF-dependent inputs |
Pinout & Package
W63AH6NBVABI is housed in a 136-ball FBGA package (10.5mm × 12.5mm × 0.8mm, 0.65mm ball pitch), RoHS-compliant and lead-free. Ball assignment follows JEDEC MO-229WEAA standard for LPDDR3 x16 devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD1, VDD2, VDDQ, VDDCA | Power supplies | Separate analog/digital rails: VDD1 powers core logic; VDD2/VDDQ/VDDCA power I/O and CA interface at 1.2V |
| CK_t / CK_c, DQS_t / DQS_c | Differential clocks/strobes | Source-synchronous timing references for command/address and data; require matched trace lengths and AC coupling |
| CA[9:0], CS_n | Command/Address bus | 10-bit single-ended bus transferring commands, addresses, and bank selects on both CK edges (double-data-rate) |
| DQ[15:0], DM_n[1:0] | Data I/O and mask | x16 bidirectional data bus with per-byte write mask; DM_n enables byte-level write disable during burst writes |
| ZQ | Calibration reference | Connects to external 240Ω ±1% precision resistor for RONPU/RONPD and ODT impedance tuning |
| CKE, RESET_n | Control inputs | CKE gates clock enable for power-down entry/exit; RESET_n performs synchronous reset of internal state machines |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by masking inactive banks or segments via MR16/MR17, lowering IDD6 by up to 50% in partial retention |
| ZQ Calibration | Enables dynamic output driver and ODT impedance adjustment using external 240Ω resistor, maintaining signal integrity across voltage/temperature |
| CA Training Mode | Compensates for CA bus skew via MR41–MR48 register writes, improving setup/hold margin for high-speed command decoding |
| Write Leveling | Aligns DQS strobe to DQ eye center using MRW commands, critical for reliable capture at 1600MT/s |
| On-Die Termination (ODT) | Programmable ODT values (40Ω, 60Ω, 120Ω, off) on DQ/DQS lines eliminate need for external termination resistors |
Applications
| Smartphone Application | Tablet Platform |
|---|---|
Use Scenario: Main system memory interfacing with application processor in compact handheld design with strict thermal and power constraints. IC Role / Device Role / Timing Role: LPDDR3 x16 memory channel providing 12.8GB/s peak bandwidth to ARM-based SoC with AXI bus interface. Use Value: PASR and deep power-down modes cut standby current to <10µA, extending battery life without sacrificing boot-time latency. | Use Scenario: Dual-channel memory subsystem in 10-inch Android tablet requiring high-density, low-voltage DRAM with robust signal integrity. IC Role / Device Role / Timing Role: Primary memory component supporting GPU texture caching and video decode buffers with 1600MT/s throughput. Use Value: CA training and write leveling ensure timing closure at 800MHz clock despite 8-layer PCB routing complexity and board-level noise. |
| Industrial HMI Display | Automotive Infotainment |
Use Scenario: Embedded human-machine interface with Linux OS running on Cortex-A series MCU, requiring extended temperature operation. IC Role / Device Role / Timing Role: System RAM for GUI rendering engine and real-time control firmware execution at -40°C to +85°C ambient. Use Value: Industrial-grade temperature rating and validated tREFI/tRFC margins guarantee reliable refresh behavior under thermal cycling stress. | Use Scenario: Head-unit memory for infotainment SoC handling navigation, audio DSP, and rear-seat entertainment concurrently. IC Role / Device Role / Timing Role: Shared memory resource accessed by multiple IP blocks including display controller, audio codec, and CAN gateway processor. Use Value: On-die termination and HSUL_12 I/O minimize EMI and crosstalk in noisy automotive harness environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D2PF-107 WT:A | Same 1Gb x32 density, 107-ball FBGA, but wider x32 interface and higher 1.07ns tCK (1866MT/s); requires different layout and controller support. | Targets higher-bandwidth applications like premium tablets; not drop-in compatible due to x32 vs x16 bus width and pinout mismatch. | Select only if SoC supports x32 LPDDR3 and board layout accommodates 107-ball footprint. |
| K4E6E304EC-EGCJ | 1Gb x16 LPDDR3 in 136-ball FBGA, same pinout and voltage, but rated for -25°C to +85°C (commercial-temp), lacks PASR segment masking (MR17). | Suitable for consumer electronics with relaxed thermal requirements; no support for fine-grained PASR segment control. | Prefer W63AH6NBVABI when industrial temperature range or MR17-configurable PASR is required. |
Compared with MT52L1G32D2PF-107 WT:A and K4E6E304EC-EGCJ, W63AH6NBVABI uniquely delivers industrial temperature support, full PASR bank-and-segment masking, and validated ZQ calibration stability across 1.14–1.30V VDDQ-making it optimal for thermally constrained embedded designs requiring long-term reliability.
Availability
W63AH6NBVABI is available at Aetrix Electronics and suitable for smartphone main memory, tablet platform memory, and industrial HMI display applications requiring stable component supply, long-lifecycle availability, and JEDEC-compliant LPDDR3 interoperability.
Supply support for W63AH6NBVABI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
The W63AHxNB series targets power-sensitive portable and industrial systems needing JEDEC LPDDR3 compliance, extended temperature operation, and advanced power management features like PASR and deep power-down.
FAQ
What is the maximum data rate supported by W63AH6NBVABI?
W63AH6NBVABI supports a maximum data rate of 1600 MT/s, corresponding to an 800MHz clock frequency with double-data-rate transfers. This is confirmed in the AC timing section (tCK(avg) = 1.25ns) and electrical characteristics table of the official Winbond datasheet revision A01-005. The W63AH6NBVABI achieves this rate while maintaining JEDEC LPDDR3-1600 compliance under nominal 1.2V VDDQ and industrial temperature conditions.
Does W63AH6NBVABI support on-die termination (ODT)?
Yes, W63AH6NBVABI supports programmable on-die termination with selectable values of 40Ω, 60Ω, 120Ω, and disabled state, controlled via MR11 (ODT Control register). This eliminates the need for external termination resistors on DQ and DQS lines, reducing PCB area and improving signal integrity-especially critical for high-speed 1600MT/s operation. The ODT states are fully specified in the functional description section of the W63AH6NBVABI datasheet.
What package type and ball count does W63AH6NBVABI use?
W63AH6NBVABI uses a 136-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 10.5mm × 12.5mm × 0.8mm with 0.65mm ball pitch, compliant with JEDEC MO-229WEAA. This matches the pinout and mechanical dimensions of standard LPDDR3 x16 devices. The ball assignment-including dedicated VDDQ, VDDCA, ZQ, and differential CK/DQS pairs-is documented in Section 4 ("Ball Assignment") of the W63AH6NBVABI datasheet.
Is W63AH6NBVABI suitable for industrial temperature applications?
Yes, W63AH6NBVABI is rated for operation from -40°C to +85°C, explicitly defined as the industrial temperature grade in Section 8.2.3 ("Operating Temperature Range") of its datasheet. This makes it suitable for applications such as industrial HMIs, automotive infotainment head units, and ruggedized portable equipment where ambient thermal extremes are expected. The W63AH6NBVABI's refresh timing parameters (tREFI, tRFC) are validated across this full range.
How does W63AH6NBVABI implement partial array self-refresh (PASR)?
W63AH6NBVABI implements PASR through two dedicated mode registers: MR16 (PASR Bank Mask) and MR17 (PASR Segment Mask). These allow selective disabling of idle banks or sub-array segments during self-refresh, reducing IDD6 current by up to 50%. Configuration is performed via MRW commands, and the feature is detailed in Sections 7.4.11.1 and 7.4.11.2 of the W63AH6NBVABI datasheet, with timing and power impact quantified in Table 8.4.2.2.
W63AH6NBVABI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH6NBVABI FAQ
1.How can I place an order for W63AH6NBVABI through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH6NBVABI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH6NBVABI reliable?
The price and inventory of W63AH6NBVABI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH6NBVABI is usually 5 days.
3.What payment methods are accepted for W63AH6NBVABI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH6NBVABI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH6NBVABI?
W63AH6NBVABI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH6NBVABI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH6NBVABI?
For technical support, including W63AH6NBVABI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH6NBVABI requirements.
6.How does Aetrix verify that W63AH6NBVABI is sourced from the original manufacturer or authorized distributors?
All W63AH6NBVABI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH6NBVABI meets industry standards.
7.What is the process for return or replacement of W63AH6NBVABI?
All W63AH6NBVABI units undergo pre-shipment inspection (PSI). If there is an issue with W63AH6NBVABI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH6NBVABI part is unused and in its original packaging.
Return procedure for W63AH6NBVABI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W63AH6NBVABI Tags

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M24C02-WMN6TP
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