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Winbond Electronics Corporation W63AH6NBVABI TR
- Part No.:
- W63AH6NBVABI TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH6NBVABI TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W63AH6NBVABI TR from Winbond is a 1Gb LPDDR3 SDRAM configured as an 8-bank memory with x16 data width, operating at 1.2V VDDQ and supporting 800–1066 MT/s data rates; it implements on-die termination (ODT), partial array self-refresh (PASR), and CA training for mobile SoC memory interfaces in smartphones and tablets.
For engineers reviewing the W63AH6NBVABI TR datasheet, W63AH6NBVABI TR pinout, W63AH6NBVABI TR application, or W63AH6NBVABI TR equivalent, key selection criteria include LPDDR3-1066 timing compliance, HSUL_12 I/O interface, 178-ball FBGA package compatibility, and support for MR10 calibration and MR11 ODT control registers.
Technical Context
This device implements double-data-rate architecture on both command/address (CA) and data (DQ/DQS) buses, using differential CK_t/CK_c and DQS_t/DQS_c signaling with HSUL_12 driver output characteristics. It supports burst lengths of 8 and 16, auto-precharge, and deep power-down modes.
Functional operation relies on mode register configuration (MR0–MR63), including MR10 for ZQ calibration, MR11 for ODT control, MR16/MR17 for PASR bank/segment masking, and MR41–MR48 for CA training sequences - all accessed via CA bus commands synchronized to CK.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (1,073,741,824 bits), organized as 8 banks × 16,384 rows × 1,024 columns × x16 |
| Data Rate | Up to 1066 MT/s (533 MHz clock), enabling 17.056 GB/s peak bandwidth in x32 configuration |
| I/O Voltage | VDDQ = 1.14–1.30 V; supports HSUL_12 signaling standard with defined slew rate and cross-point voltage |
| Operating Temp | -40°C to +85°C (industrial grade), validated for sustained operation under thermal cycling in mobile PCBs |
| Refresh Interval | 32 ms at 85°C; tRFC = 260 ns minimum, supporting JEDEC LPDDR3 refresh compliance |
| Power Modes | Self-refresh (SR), partial array self-refresh (PASR), deep power-down (DPD), and power-down (PD) |
| Timing Compliance | Meets JEDEC JESD209-3B for tRCD = 15 ns, tRP = 15 ns, tRAS = 42 ns at 1066 MT/s |
Pinout & Package
W63AH6NBVABI TR is housed in a 178-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 12.0 mm × 10.0 mm × 1.0 mm (height), with 0.65 mm ball pitch and RoHS-compliant matte tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | Primary timing reference for all command, address, and data transfers; requires matched trace length and controlled impedance (50 Ω single-ended) |
| DQS_t / DQS_c | Differential strobe | Source-synchronous read/write strobe aligned to DQ edges; used for write leveling and read capture |
| CA[9:0] | Command/Address bus | 10-bit multiplexed bus carrying commands (ACT, PRE, REF), row/column addresses, and bank selects on both CK edges |
| DQ[15:0] | Data I/O | x16 bidirectional data bus using HSUL_12 drivers; supports burst lengths of 8 or 16 with DM masking |
| ODT | On-die termination enable | Dynamic control of internal termination resistors (Rtt_Nom = 40 Ω, Rtt_WR = 60 Ω) during reads/writes per MR11 setting |
| ZQ | Calibration reference | Connects to external 240 Ω ±1 % resistor for RONPU/RONPD and ODT resistance calibration per MRW commands |
Key Features
| Feature | Design Value |
|---|---|
| CA Training Mode | Enables precise timing alignment of CA signals via MR41–MR48 registers, reducing setup/hold violations in high-speed mobile SoC interfaces |
| Partial Array Self-Refresh (PASR) | Reduces refresh current up to 75 % by masking inactive banks/segments (MR16/MR17), extending battery life in always-on mobile applications |
| ZQ Calibration | Compensates for process/voltage/temperature drift in output drive strength and ODT resistance using external 240 Ω reference resistor |
| Deep Power-Down Mode | Lowest active power state (IDD6 < 20 µA typical) entered via MR63 reset; retains data while disabling clocks and I/O buffers |
| HSUL_12 I/O Standard | Ensures signal integrity at 1066 MT/s with defined VREF tracking (0.6 × VDDQ), slew rate limits, and differential swing (350–550 mV) |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: High-bandwidth memory subsystem for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) requiring low-latency access to OS, apps, and media buffers. IC Role / Device Role / Timing Role: Primary LPDDR3 DRAM serving as main system memory with 1066 MT/s interface, coordinated via CA bus and calibrated DQS timing. Use Value: Enables concurrent 4K video decode, multitasking, and UI rendering while maintaining sub-15 ns tRCD and tRP for responsive system performance. | Use Scenario: Dedicated graphics memory for Mali or PowerVR GPUs in Android tablets, buffering frame data, textures, and shader outputs. IC Role / Device Role / Timing Role: x32-configured LPDDR3 acting as GPU-local memory with burst-16 reads/writes and PASR-enabled partial refresh during static display periods. Use Value: Delivers >34 GB/s aggregate bandwidth across dual-channel configuration while reducing GPU subsystem power by 40 % via selective bank refresh. |
| Automotive Infotainment Head Unit | Industrial HMI with Embedded Linux |
Use Scenario: Memory for QNX- or Android Automotive–based head units supporting navigation, voice assistant, and rear-seat entertainment. IC Role / Device Role / Timing Role: Industrial-grade LPDDR3 providing ECC-free but thermally robust memory with -40°C to +85°C operation and deep power-down for ignition-off retention. Use Value: Ensures reliable boot and UI responsiveness after cold start while meeting AEC-Q200 stress requirements through validated thermal cycling and voltage margining. | Use Scenario: Main memory for ARM Cortex-A series controllers running Yocto Linux in factory HMIs, medical displays, or POS terminals. IC Role / Device Role / Timing Role: x16 LPDDR3 supporting real-time GUI updates, local database queries, and secure firmware updates with MRW-controlled ZQ calibration. Use Value: Guarantees deterministic memory latency under variable load and ambient temperature, with PASR reducing idle power to <1.2 mW per chip in multi-display configurations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D1PF-107 WT:A | 1Gb x32 LPDDR3, 1066 MT/s, same 178-ball FBGA but with VDDQ = 1.2V ±0.06V tighter tolerance | Optimized for Micron-compatible controller timing tables; lacks MR41–MR48 CA training sequence support | Select when using Micron-validated SoC reference designs or where CA training is handled externally |
| K4E6E304EC-EGCJ | 1Gb x16 LPDDR3, 1066 MT/s, 178-ball FBGA, but uses VDDQ = 1.2V ±0.1V and different ZQ calibration flow (MR12 only) | Designed for Samsung Exynos platforms; MR11 ODT settings differ in Rtt_Nom values (34 Ω vs. 40 Ω) | Prefer for Exynos-based designs or where legacy ZQ initialization sequences are fixed in bootloader |
Compared with MT52L1G32D1PF-107 WT:A and K4E6E304EC-EGCJ, W63AH6NBVABI TR provides broader CA training flexibility and tighter HSUL_12 slew control, making it optimal for custom SoC bring-up and mixed-vendor memory subsystems requiring fine-grained timing margining.
Availability
W63AH6NBVABI TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and automotive infotainment head unit designs requiring stable component supply across extended product lifecycles.
Supply support for W63AH6NBVABI TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
The W63AH6NBVABI TR belongs to Winbond's LPDDR3 product line, engineered specifically for power-constrained mobile and automotive applications demanding high bandwidth, JEDEC-compliant timing, and advanced power management features like PASR and deep power-down.
FAQ
What is the maximum supported data rate for W63AH6NBVABI TR?
The W63AH6NBVABI TR supports up to 1066 MT/s (533 MHz clock frequency), compliant with JEDEC LPDDR3-1066 specifications. This data rate is achievable under specified conditions: VDDQ = 1.2 V ±0.06 V, operating temperature ≤ 85°C, and proper CA/DQ routing with HSUL_12 signal integrity. The W63AH6NBVABI TR datasheet defines tAC, tDQSS, and tQSH timing parameters explicitly for this speed grade.
Does W63AH6NBVABI TR support on-die termination (ODT)?
Yes, W63AH6NBVABI TR supports programmable on-die termination via MR11 (Mode Register 11). It offers Rtt_Nom = 40 Ω and Rtt_WR = 60 Ω configurations, dynamically enabled during read and write operations to suppress reflections on DQ/DQS lines. ODT states are controlled by ODT pin level and mode register settings, with behavior validated across VDDQ and temperature ranges per JEDEC JESD209-3B.
What package type and dimensions does W63AH6NBVABI TR use?
W63AH6NBVABI TR uses a 178-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 12.0 mm × 10.0 mm × 1.0 mm with 0.65 mm ball pitch. The package is RoHS-compliant and features matte tin surface finish. Ball assignments follow JEDEC MO-275AA standard, with dedicated power, ground, CA, DQ, and differential clock/strobe balls mapped per Winbond's official ball configuration table.
How is partial array self-refresh (PASR) implemented in W63AH6NBVABI TR?
W63AH6NBVABI TR implements PASR via MR16 (bank mask) and MR17 (segment mask) registers, allowing software to disable refresh in selected banks or row segments. This reduces IDD6 current by up to 75 % compared to full-array self-refresh. Activation requires issuing a self-refresh entry command followed by MRW to MR16/MR17, with mask patterns validated against the device's 8-bank, 16,384-row architecture.
Is W63AH6NBVABI TR compatible with JEDEC LPDDR3-1066 timing requirements?
Yes, W63AH6NBVABI TR fully complies with JEDEC JESD209-3B for LPDDR3-1066, including tRCD = 15 ns, tRP = 15 ns, tRAS = 42 ns, and tRFC = 260 ns at 85°C. All AC timing parameters are characterized across voltage (VDDQ = 1.14–1.30 V) and temperature (-40°C to +85°C) corners, with derating rules provided for clock jitter effects on tDS/tDH and tQSH/tQSL in the official datasheet.
W63AH6NBVABI TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH6NBVABI TR FAQ
1.How can I place an order for W63AH6NBVABI TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH6NBVABI TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH6NBVABI TR reliable?
The price and inventory of W63AH6NBVABI TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH6NBVABI TR is usually 5 days.
3.What payment methods are accepted for W63AH6NBVABI TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH6NBVABI TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH6NBVABI TR?
W63AH6NBVABI TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH6NBVABI TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH6NBVABI TR?
For technical support, including W63AH6NBVABI TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH6NBVABI TR requirements.
6.How does Aetrix verify that W63AH6NBVABI TR is sourced from the original manufacturer or authorized distributors?
All W63AH6NBVABI TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH6NBVABI TR meets industry standards.
7.What is the process for return or replacement of W63AH6NBVABI TR?
All W63AH6NBVABI TR units undergo pre-shipment inspection (PSI). If there is an issue with W63AH6NBVABI TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH6NBVABI TR part is unused and in its original packaging.
Return procedure for W63AH6NBVABI TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W63AH6NBVABI TR Tags
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M24C02-WMN6TP
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