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Winbond Electronics Corporation W63AH6NBVACE
- Part No.:
- W63AH6NBVACE
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH6NBVACE.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,812
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Product details
Overview
W63AH6NBVACE from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus, 1.2V VDDQ supply, 8-bank architecture, and support for 800–1066 MT/s data rates in HSUL_12 I/O interface mode; used as main memory in mobile SoC platforms requiring low-power, high-bandwidth DRAM.
For engineers reviewing the W63AH6NBVACE datasheet, W63AH6NBVACE pinout, W63AH6NBVACE application, or W63AH6NBVACE equivalent, key selection criteria include LPDDR3 JEDEC compliance, HSUL_12 signaling, on-die termination (ODT), partial array self-refresh (PASR), and CA training support for system-level timing calibration.
Technical Context
This device implements JEDEC-standard LPDDR3 protocol with dual-edge command/address transfer on a 10-bit CA bus, enabling reduced pin count versus DDR3. It supports burst lengths of 8 and 16, auto-precharge, and deep power-down modes.
Internal operation includes programmable mode registers (MR0–MR63) for configuration of ODT states, PASR masking, temperature-sensing, DQ/CA calibration, and ZQ calibration; all controlled via MRW/MRR commands synchronized to CK.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB) organized as 8 banks × 16K rows × 1K columns × x16 |
| Data Rate | Up to 1066 MT/s (533 MHz clock, double-data-rate) |
| I/O Voltage | VDDQ = 1.14–1.30 V; supports HSUL_12 driver standard |
| Operating Temp | –25°C to +85°C (commercial grade) |
| Power Modes | Active, Power-Down, Deep Power-Down, Self-Refresh, Partial Array Self-Refresh (PASR) |
| Interface Standard | JEDEC JESD209-3B LPDDR3 compliant; 10-bit CA bus with differential CK/DQS |
| Timing Calibration | Supports CA training (MR41–MR42, MR48), WR leveling, and ZQ calibration (MR10, MR13) |
Pinout & Package
W63AH6NBVACE is packaged in a 136-ball FBGA (9 mm × 11.5 mm × 0.8 mm, 0.5 mm pitch) with ball grid layout defined per JEDEC MO-271AA. Pin functions follow LPDDR3 standard assignment for CA[9:0], DQ[15:0], DQS_t/c, CK_t/c, CKE, CS_n, RESET_n, VDD/VSS rails, and VREF.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | Reference timing for all command, address, and data transfers; enables precise edge alignment in HSUL_12 mode |
| CA[9:0] | Command/Address bus | 10-bit multiplexed bus carrying commands, row/column addresses, and bank select; sampled on both CK edges |
| DQ[15:0] | Data I/O | x16 bidirectional data interface with programmable drive strength and on-die termination control |
| DQS_t / DQS_c | Differential strobe | Source-synchronous read/write strobe aligned to DQ edges; used for timing capture and write leveling |
| CS_n | Chip select | Active-low signal enabling command decoding; supports multi-chip addressing in stacked or discrete configurations |
| RESET_n | Asynchronous reset | Hardware-initiated initialization sequence; required before first access after power-up |
Key Features
| Feature | Design Value |
|---|---|
| HSUL_12 I/O Interface | Enables 1.2V signaling with reduced swing and improved noise margin vs. SSTL; compatible with mobile SoC PHYs |
| On-Die Termination (ODT) | Configurable ODT states (Rtt_Nom, Rtt_WR, Rtt_Park) reduce external termination components and improve signal integrity |
| Partial Array Self-Refresh (PASR) | Reduces refresh current up to 75% by selectively refreshing only active memory segments-critical for battery life in always-on devices |
| CA Training Mode | Compensates for CA bus skew across high-speed mobile PCB layouts via MR41/MR42/MR48 register writes |
| ZQ Calibration | Adjusts output driver impedance (RONPU/RONPD) and ODT values using external 240 Ω ±1% resistor to maintain signal fidelity over voltage/temperature |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary working memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) in smartphones with display, camera, and 5G modem subsystems. IC Role / Device Role / Timing Role: LPDDR3 SDRAM providing burst-accessed, low-latency storage for CPU/GPU instruction/data caches and multimedia buffers. Use Value: Enables 1066 MT/s bandwidth at 1.2V to sustain concurrent 4K video decode, AI inference, and UI rendering without thermal throttling. | Use Scenario: System memory in Android/iOS tablets where sustained bandwidth and extended battery life are critical during web browsing, streaming, and productivity apps. IC Role / Device Role / Timing Role: High-efficiency DRAM supporting dynamic voltage/frequency scaling (DVFS) and deep power-down entry between usage bursts. Use Value: PASR and deep power-down modes cut idle current to <10 µA, extending usable battery life by >2 hours versus non-LPDDR3 alternatives. |
| Automotive Infotainment Head Unit | Industrial HMI with Embedded Linux |
Use Scenario: Memory subsystem in AEC-Q200 qualified infotainment units running Android Automotive OS with navigation, voice assistant, and OTA update capability. IC Role / Device Role / Timing Role: JEDEC-compliant LPDDR3 buffer for real-time audio/video pipelines and persistent application state storage. Use Value: CA training and WR leveling ensure robust command timing across automotive-grade PCBs with variable trace lengths and EMI exposure. | Use Scenario: Main memory in fanless industrial HMIs based on NXP i.MX or TI Sitara processors deployed in factory automation panels with 24/7 operation. IC Role / Device Role / Timing Role: Temperature-stable DRAM supporting extended commercial range (–25°C to +85°C) and reliable boot-to-UI latency under thermal cycling. Use Value: Built-in temperature sensor (MR4) and MR4–MR7 configuration registers allow runtime thermal adaptation without external monitoring circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D1PF-107 | 1Gb x32 LPDDR3, 1066 MT/s, same VDDQ range, but uses 168-ball FBGA (10.5×13 mm) | Requires PCB redesign due to larger package and different ball map; supports identical JEDEC commands and timing | Select when x32 interface and higher aggregate bandwidth are needed; verify CA/DQ routing compatibility |
| K4E6E304EC-EGCJ | 1Gb x16 LPDDR3, 1066 MT/s, 1.2V VDDQ, but rated for –40°C to +85°C industrial temp range | Valid for extended temperature deployments; otherwise functionally identical in timing, commands, and register set | Select for harsh-environment applications where ambient exceeds +85°C or drops below –25°C |
Compared with W63AH6NBVACE, MT52L1G32D1PF-107 offers wider data bus but demands layout revision, while K4E6E304EC-EGCJ provides broader temperature tolerance without changing footprint or firmware-making it ideal for industrial edge devices needing drop-in reliability uplift.
Availability
W63AH6NBVACE is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, automotive infotainment head units, and industrial HMI with embedded Linux requiring stable component supply and full LPDDR3 protocol compliance.
Supply support for W63AH6NBVACE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR/NAND Flash, RAM, and DRAM for consumer, industrial, and automotive markets.
The W63AH6NBVACE belongs to Winbond's LPDDR3 product line designed specifically for mobile and portable electronics demanding low-voltage operation, high-density packaging, and JEDEC-standard interoperability with leading SoC vendors.
FAQ
What is the maximum data rate supported by W63AH6NBVACE?
W63AH6NBVACE supports up to 1066 MT/s (megatransfers per second), corresponding to a 533 MHz clock frequency with double-data-rate operation. This performance level meets JEDEC LPDDR3 specification requirements for high-end mobile processors and is validated under VDDQ = 1.2V, tCK = 1.875 ns, and commercial temperature conditions.
Does W63AH6NBVACE support partial array self-refresh (PASR)?
Yes, W63AH6NBVACE supports PASR via MR16 (bank mask) and MR17 (segment mask) registers, allowing selective refresh of active memory regions. This feature reduces self-refresh current significantly-down to IDD6 levels-extending battery life in always-on mobile and IoT applications without compromising data retention integrity.
What package type and dimensions does W63AH6NBVACE use?
W63AH6NBVACE uses a 136-ball Fine-Pitch Ball Grid Array (FBGA) package per JEDEC MO-271AA, measuring 9.0 mm × 11.5 mm × 0.8 mm with 0.5 mm ball pitch. The ball map follows standard LPDDR3 pinout including dedicated CA, DQ, DQS, CK, and control signals, ensuring compatibility with common mobile PCB stackups.
How is on-die termination (ODT) configured on W63AH6NBVACE?
ODT on W63AH6NBVACE is configured through MR11 (ODT Control) and MR2 (Device Feature 2) registers, supporting Rtt_Nom (60 Ω), Rtt_WR (30 Ω), and Rtt_Park (120 Ω) states. These settings are dynamically selectable per command cycle to optimize signal integrity during reads, writes, and idle periods without external resistors.
Is CA training supported by W63AH6NBVACE, and how is it implemented?
Yes, W63AH6NBVACE supports CA training via MR41, MR42, and MR48 registers to calibrate command/address timing skew. The process uses internal pattern generation and sampling logic to adjust delay taps on CA lines, ensuring setup/hold compliance across temperature, voltage, and PCB trace length variations-critical for reliable boot and high-speed initialization.
W63AH6NBVACE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH6NBVACE FAQ
1.How can I place an order for W63AH6NBVACE through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH6NBVACE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH6NBVACE reliable?
The price and inventory of W63AH6NBVACE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH6NBVACE is usually 5 days.
3.What payment methods are accepted for W63AH6NBVACE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH6NBVACE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH6NBVACE?
W63AH6NBVACE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH6NBVACE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH6NBVACE?
For technical support, including W63AH6NBVACE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH6NBVACE requirements.
6.How does Aetrix verify that W63AH6NBVACE is sourced from the original manufacturer or authorized distributors?
All W63AH6NBVACE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH6NBVACE meets industry standards.
7.What is the process for return or replacement of W63AH6NBVACE?
All W63AH6NBVACE units undergo pre-shipment inspection (PSI). If there is an issue with W63AH6NBVACE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH6NBVACE part is unused and in its original packaging.
Return procedure for W63AH6NBVACE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W63AH6NBVACE Tags
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