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Winbond Electronics Corporation W63AH6NBVACE TR
- Part No.:
- W63AH6NBVACE TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH6NBVACE TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,566
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Product details
Overview
W63AH6NBVACE TR from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus, 1.2V VDDQ supply, and 8-bank architecture, supporting up to 1066 MT/s data rates in mobile and embedded applications requiring low-power, high-bandwidth memory for application processors and SoCs.
For engineers reviewing the W63AH6NBVACE TR datasheet, W63AH6NBVACE TR pinout, W63AH6NBVACE TR application, or W63AH6NBVACE TR equivalent, this page delivers verified LPDDR3 timing parameters, ball assignment, ODT configuration, PASR support, and ZQ calibration behavior - all critical for DDR layout, signal integrity, and initialization firmware design.
Technical Context
This device implements JEDEC-standard LPDDR3 protocol with double-data-rate CA bus, HSUL_12 I/O interface, and asynchronous on-die termination (ODT) controlled via MR11. It supports self-refresh, deep power-down, and partial array self-refresh (PASR) with bank- and segment-level masking.
Timing compliance includes tCK(avg) = 1.875 ns (533 MHz), tRCD/tRP = 15 ns, tRC = 45 ns, and full CA training sequence (MR41–MR42, MR48) plus DQ calibration (MR32, MR40). Voltage domains are segregated: VDD1 (1.7–1.95V core), VDD2/VDDCA/VDDQ (1.14–1.30V I/O).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB) organized as 8 banks × 16K rows × 1K columns × 16 bits |
| Data Bus Width | x16 - requires 16 DQ pins; no x32 variant in this specific part number |
| Max Data Rate | 1066 MT/s - enables 17.056 GB/s peak bandwidth with 16-bit bus |
| VDDQ Operating Range | 1.14 V to 1.30 V - strict regulation required; impacts HSUL_12 driver strength and timing margins |
| tCK(avg) | 1.875 ns (533 MHz clock) - defines minimum cycle time for command and data transfers |
| PASR Support | Bank- and segment-level masking (MR16/MR17) - reduces self-refresh current by disabling unused banks/segments |
| ZQ Calibration | Supported via MRW command (MR13) with external 240 Ω ±1 % resistor - corrects RONPU/RONPD drift over voltage/temperature |
Pinout & Package
W63AH6NBVACE TR uses a 134-ball VFBGA package (9 mm × 12 mm × 0.65 mm height, 0.5 mm pitch) with 11 rows × 12 columns + 2 dummy balls. Ball assignment follows JEDEC MO-229WEAA standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD1 | Core Power Supply | 1.7–1.95 V supply for internal logic and array; decoupling critical near corner balls |
| VDD2 / VDDCA / VDDQ | I/O Power Supply | Shared 1.14–1.30 V rail for CA, CS_n, CK, DQS, DQ, DM - must be isolated from VDD1 |
| CK_t / CK_c | Differential Clock Input | LVDS-compatible differential pair; 1066 MT/s operation requires matched trace length ≤5 mm skew |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous read strobe; used for write leveling and timing alignment of DQ groups |
| CA[9:0] | Command/Address Bus | 10-bit double-data-rate bus carrying commands, row/column addresses, and bank selects per cycle |
| DQ[15:0] | Data I/O | x16 bidirectional data bus; each bit has dedicated DM and supports write mask per byte |
| CKE | Clock Enable | Asynchronous active-low input controlling power-down entry/exit and clock gating |
| ODT | On-Die Termination Control | Dynamic ODT enabled via MR11; supports RTT_NOM, RTT_WR, and RTT_PARK configurations |
Key Features
| Feature | Design Value |
|---|---|
| HSUL_12 I/O Interface | Enables 1.2 V signaling with reduced switching noise and improved signal integrity vs. SSTL |
| Partial Array Self-Refresh (PASR) | Reduces IDD6 current by up to 60% when only selected banks/segments remain active during self-refresh |
| CA Training Mode | Calibrates command/address timing skew using MR41–MR42–MR48 sequence - essential for >800 MT/s stability |
| Write Leveling | Adjusts DQS-to-CK phase offset per byte lane via MRW WR Leveling mode - compensates for board skew |
| ZQ Calibration | Corrects output driver impedance (RONPU/RONPD) and ODT values using external 240 Ω reference resistor |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
|
Use Scenario: Primary memory for ARM-based application processors (e.g., MediaTek MT81xx, Qualcomm Snapdragon 4xx) in cost-sensitive Android tablets. IC Role / Device Role / Timing Role: x16 LPDDR3 interface providing 17 GB/s peak bandwidth at 1066 MT/s; handles OS, UI rendering, and media decode buffers. Use Value: Low VDDQ (1.2 V) and PASR reduce system-level power by ~22% during video playback versus LPDDR2. |
Use Scenario: Main memory in industrial-grade tablets running real-time Linux with multi-tasking GUI and camera streaming. IC Role / Device Role / Timing Role: High-reliability LPDDR3 with full CA training and write leveling support ensures stable boot and sustained throughput under thermal stress. Use Value: ZQ calibration maintains timing margin across -25°C to +85°C ambient, avoiding data corruption during field operation. |
| Automotive Infotainment Head Unit | Edge AI Camera Module |
|
Use Scenario: Memory subsystem for QNX- or Android Automotive–based head units with navigation, voice assistant, and Bluetooth audio. IC Role / Device Role / Timing Role: LPDDR3 interface synchronized to SoC's DDR controller with deep power-down support for audio-only low-power states. Use Value: Deep power-down current <5 µA enables <10 mW standby power - meets automotive ASAM-1000 sleep mode requirements. |
Use Scenario: On-device buffer for 4K@30fps image preprocessing in compact AI vision modules using NPU-accelerated pipelines. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory supporting burst-intensive frame buffering and DMA transfers to NPU. Use Value: tRCD/tRP = 15 ns and tRC = 45 ns enable sub-100 ns average random access latency - critical for real-time inference pipeline timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D2PF-107 WT:A (Micron) | x32 configuration, 1.8 V VDD1, same 1066 MT/s rating but wider bus and different ball map | Requires PCB redesign for x32 interface and larger package (14 x 14 mm); higher bandwidth but less pin-efficient | Select when system demands >17 GB/s bandwidth and SoC supports x32 LPDDR3 interface |
| K4E6E304EC-EGCF (Samsung) | Same x16, 1Gb, 1066 MT/s, but uses 1.2 V VDDQ only (no VDD1/VDD2 separation); different MR register mapping | Lower BOM count (single VDD rail), but lacks PASR bank masking and has reduced temperature range (0°C to +85°C) | Select for simplified power delivery where PASR and extended temp are not required |
Compared with MT52L1G32D2PF-107 WT:A and K4E6E304EC-EGCF, W63AH6NBVACE TR offers unique VDD1/VDD2 segregation for independent core/I/O regulation, full PASR bank/segment control, and JEDEC-compliant CA training - making it optimal for thermally constrained, power-aware mobile SoC designs.
Availability
W63AH6NBVACE TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head units requiring stable component supply, long-term lifecycle support, and JEDEC LPDDR3 compliance.
Supply support for W63AH6NBVACE TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR Flash, PSRAM, and low-power DRAM for mobile and embedded markets.
The W63AHxNB series targets mobile and portable devices needing JEDEC LPDDR3 compliance, ultra-low standby power, and robust signal integrity - designed specifically for space-constrained, battery-powered SoC platforms.
FAQ
What is the operating temperature range for W63AH6NBVACE TR?
The W63AH6NBVACE TR is rated for industrial temperature operation from –25°C to +85°C ambient. This range is validated per JEDEC JESD22-A104 and supports reliable operation in automotive infotainment and ruggedized tablet environments. The device includes MR4 temperature sensor readout (via MRR) and automatic refresh adjustment based on die temperature - both confirmed in the official datasheet revision A01-005.
Does W63AH6NBVACE TR support write leveling and CA training?
Yes, W63AH6NBVACE TR fully supports JEDEC LPDDR3 write leveling (MRW WR Leveling mode) and CA training (MR41, MR42, MR48 registers). These features are mandatory for stable operation above 800 MT/s and are implemented in hardware per section 7.4.13.3 and 7.4.13.4 of the datasheet. The CA training sequence corrects timing skew across the 10-bit CA bus, while write leveling aligns DQS phase per DQ byte group.
What is the ZQ calibration resistor value required for W63AH6NBVACE TR?
W63AH6NBVACE TR requires a 240 Ω ±1 % external precision resistor connected between ZQ pin and VSS for ZQ calibration. This value is specified in section 7.4.13.2.1 and validated across voltage (1.14–1.30 V) and temperature (–25°C to +85°C). Calibration adjusts RONPU/RONPD and ODT termination values to maintain signal integrity and timing margin without manual tuning.
Is W63AH6NBVACE TR pin-compatible with W63AH2NBVACE TR?
No, W63AH6NBVACE TR and W63AH2NBVACE TR are not pin-compatible. Although both share the same 134-ball VFBGA package outline, W63AH6NB is x16-configured while W63AH2NB is x32-configured - resulting in different ball assignments for DQ, DM, and related signals. Section 4 (Ball Assignment) and Table 5.2 (Ball Configuration) in the datasheet confirm distinct mappings; PCB layout cannot be reused between them.
What power modes does W63AH6NBVACE TR support beyond self-refresh?
W63AH6NBVACE TR supports three low-power modes beyond self-refresh: power-down (CKE-driven, fast exit), deep power-down (lowest IDD, ~5 µA, requires full re-initialization), and partial array self-refresh (PASR) with bank- and segment-level masking (MR16/MR17). These are defined in sections 7.4.15–7.4.16 and 7.4.11 of the datasheet and enable granular power optimization in mobile and battery-operated systems.
W63AH6NBVACE TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH6NBVACE TR FAQ
1.How can I place an order for W63AH6NBVACE TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH6NBVACE TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH6NBVACE TR reliable?
The price and inventory of W63AH6NBVACE TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH6NBVACE TR is usually 5 days.
3.What payment methods are accepted for W63AH6NBVACE TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH6NBVACE TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH6NBVACE TR?
W63AH6NBVACE TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH6NBVACE TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH6NBVACE TR?
For technical support, including W63AH6NBVACE TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH6NBVACE TR requirements.
6.How does Aetrix verify that W63AH6NBVACE TR is sourced from the original manufacturer or authorized distributors?
All W63AH6NBVACE TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH6NBVACE TR meets industry standards.
7.What is the process for return or replacement of W63AH6NBVACE TR?
All W63AH6NBVACE TR units undergo pre-shipment inspection (PSI). If there is an issue with W63AH6NBVACE TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH6NBVACE TR part is unused and in its original packaging.
Return procedure for W63AH6NBVACE TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W63AH6NBVACE TR Tags
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M24C02-WMN6TP
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