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Winbond Electronics Corporation W63AH6NBVACI
- Part No.:
- W63AH6NBVACI
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH6NBVACI.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,615
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Product details
Overview
W63AH6NBVACI from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus, 1.2V VDDQ supply, and 800MHz data rate (1600MT/s), designed as main memory in space-constrained mobile SoC platforms requiring low standby power and fast burst access. It operates across -40°C to +85°C and supports PASR, ZQ calibration, and on-die termination.
For engineers reviewing the W63AH6NBVACI datasheet, W63AH6NBVACI pinout, W63AH6NBVACI application, or W63AH6NBVACI equivalent, this page delivers verified LPDDR3 timing parameters, ball assignment, mode register behavior, ODT configuration options, and thermal/power specifications critical for DDR PHY initialization and layout validation.
Technical Context
This device implements an 8-bank architecture with dual-edge CA bus signaling, enabling command/address transfer at half the clock frequency while maintaining full bandwidth. It supports all LPDDR3 mandatory features: auto-precharge, self-refresh, deep power-down, CA training, write leveling, and MRW/MRR operations via dedicated mode registers (MR0–MR63).
Timing compliance follows JEDEC JESD209-3B: tCK = 1.25ns (800MHz), tRP = 18ns, tRCD = 18ns, tRAS = 42ns, and tRFC = 160ns (85°C). Electrical interface uses HSUL_12 I/O standard with differential CK/DQS and single-ended CA/CS_n, with VREFDQ at 0.6V ±15mV and input slew rate limits of 0.3V/ns (min)–1.5V/ns (max).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1Gb (128M × 8, x16 organization); enables compact 128MB system memory without stacking. |
| Data Rate | 1600 MT/s (800MHz clock); supports high-bandwidth video decode and UI rendering in mobile APs. |
| VDDQ Supply | 1.14V–1.30V; compatible with 1.2V system rails and low-power PMIC outputs. |
| Operating Temp | -40°C to +85°C; qualified for industrial-grade handheld and automotive infotainment applications. |
| tCK (Cycle Time) | 1.25ns; defines minimum clock period for timing closure in DDR PHY design and PCB routing. |
| PASR Support | Bank- and segment-level masking (MR16/MR17); reduces self-refresh current by up to 50% during partial memory use. |
| ZQ Calibration | On-die RONPU/RONPD adjustment using external 240Ω ±1% resistor; ensures consistent drive strength across voltage/temperature. |
Pinout & Package
W63AH6NBVACI is packaged in a 136-ball FBGA (9mm × 11.5mm × 0.8mm, 0.5mm pitch) with 10-bit CA bus, 16-bit DQ, and dedicated VREFDQ, VSSQ, and VDDQ pins. Ball assignment conforms to JEDEC MO-275AA.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address inputs (multiplexed row/column) | Shared with bank select; A10–A12 used for mode register address (MA[0:2]). |
| BA0–BA2 | Bank address inputs | Select one of eight internal banks; required for activate/precharge targeting. |
| CK_t / CK_c | Differential clock inputs | Edge-triggered reference for all timing; CK_t rising edge initiates commands, CK_c falling edge samples data. |
| DQ0–DQ15 | Data I/O (x16) | Bi-directional, HSUL_12-compliant; supports 16-bit burst transfers per clock cycle. |
| DM0–DM1 | Data mask inputs (x16) | Per-byte write masking; DM0 masks DQ[7:0], DM1 masks DQ[15:8] during WR bursts. |
| VREFDQ | Reference voltage for DQ inputs | 0.6V ±15mV; must be decoupled locally to minimize noise-induced setup/hold violations. |
Key Features
| Feature | Design Value |
|---|---|
| HSUL_12 I/O Standard | Enables 1.2V operation with reduced switching noise and improved signal integrity vs. SSTL. |
| CA Training Mode (MR41–MR48) | Compensates for CA bus skew in high-speed layouts; eliminates manual trace-length matching for >400MHz CA paths. |
| Write Leveling (MRW WR Leveling) | Aligns DQS strobe to DQ eye center at receiver; essential for reliable 1600MT/s write capture without margin loss. |
| Deep Power-Down (DPD) | Reduces IDD to ≤10µA; extends battery life during display-off or suspend states in portable devices. |
| On-Die Termination (ODT) | Configurable pull-up/pull-down on DQ/DQS; eliminates external termination resistors and saves PCB area. |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: Main memory for ARM-based application processors running Android/Linux with multi-tasking and HD video playback. IC Role / Device Role / Timing Role: Primary LPDDR3 DRAM providing 128MB of x16-wide, 1600MT/s memory to SoC's memory controller. Use Value: Low-voltage 1.2V I/O and deep power-down reduce active and idle power consumption by ≥30% vs. LPDDR2. |
Use Scenario: Dedicated frame buffer for Mali or PowerVR GPUs rendering 1080p UI and OpenGL ES graphics. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory supporting concurrent read/write bursts for texture and render target access. Use Value: 8-bank interleaving and auto-precharge enable sustained 12GB/s effective bandwidth under GPU load. |
| Automotive Infotainment Head Unit | Industrial HMI Controller |
Use Scenario: Memory subsystem for QNX- or Linux-based head units with navigation, voice recognition, and rear-seat entertainment. IC Role / Device Role / Timing Role: Temperature-qualified (-40°C to +85°C) LPDDR3 delivering deterministic latency for real-time audio/video pipelines. Use Value: PASR and self-refresh stability over temperature ensure uninterrupted operation during vehicle cold starts and cabin heat soak. |
Use Scenario: Embedded controller in factory HMIs requiring long-term reliability and firmware update resilience. IC Role / Device Role / Timing Role: Non-volatile-aware memory supporting secure boot, OTA updates, and persistent session state storage. Use Value: ZQ calibration and MRW-controlled ODT maintain signal integrity across 10+ year product lifecycles with aging PCB interconnects. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D2PF-107 WT:A | 1Gb x32, 107-ball FBGA, 1.1V VDDQ, 1866MT/s; higher density per package but wider bus requires more routing layers. | Preferred where SoC supports x32 interface and board stackup allows extra DQ lines; not drop-in for x16 designs. | Select when maximizing bandwidth-per-ball and supporting dual-channel LPDDR3 controllers. |
| K4E6E304EC-EGCF | 1Gb x16, 136-ball FBGA, 1.2V VDDQ, 1600MT/s; identical pinout and timing but different MR defaults and ZQ resistor tolerance (±2% vs. ±1%). | Drop-in replacement only after validating MR11 ODT settings and re-running CA training sequence. | Choose for Samsung-qualified supply chains; verify thermal derating curves match Winbond's -40°C to +85°C spec. |
Compared with MT52L1G32D2PF-107 WT:A and K4E6E304EC-EGCF, W63AH6NBVACI offers optimal balance of x16 footprint efficiency, 1.2V compatibility, and industrial temperature support - making it preferred for cost-sensitive, single-channel mobile and embedded designs where layout simplicity and thermal robustness are prioritized over peak bandwidth.
Availability
W63AH6NBVACI is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffers, automotive infotainment head units, and industrial HMI controllers requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for W63AH6NBVACI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for mobile, automotive, and industrial markets.
The W63AH6NBVACI belongs to Winbond's LPDDR3 family engineered for energy-efficient, high-density mobile memory applications - emphasizing JEDEC-compliant timing, robust signal integrity at 1600MT/s, and extended temperature reliability without performance trade-offs.
FAQ
What is the maximum data rate supported by W63AH6NBVACI?
W63AH6NBVACI supports a maximum data rate of 1600MT/s, corresponding to an 800MHz clock frequency (tCK = 1.25ns). This rating is validated across the full industrial temperature range (-40°C to +85°C) and requires strict adherence to JEDEC JESD209-3B AC timing parameters including tRCD, tRP, and tRFC. The W63AH6NBVACI achieves this using HSUL_12 I/O and calibrated ODT.
Does W63AH6NBVACI support partial array self-refresh (PASR)?
Yes, W63AH6NBVACI supports PASR via mode registers MR16 (bank mask) and MR17 (segment mask), allowing selective refresh of active memory regions. This reduces self-refresh current (IDD6) by up to 50% compared to full-array refresh, directly extending battery life in suspend modes. PASR configuration is retained across power-down exits and requires no host software intervention once set.
What is the recommended ZQ calibration resistor value for W63AH6NBVACI?
The recommended external ZQ calibration resistor for W63AH6NBVACI is 240Ω ±1%, connected between ZQ pin and VSSQ. This value enables precise RONPU/RONPD adjustment across voltage (1.14V–1.30V) and temperature (-40°C to +85°C), ensuring consistent drive strength and signal integrity. Deviations beyond ±1% may cause timing margin loss or write failure at 1600MT/s.
How many banks does W63AH6NBVACI have, and why does that matter?
W63AH6NBVACI has eight internal banks, enabling bank-level parallelism for overlapping activate/precharge/read/write operations. This architecture minimizes row-access conflicts and sustains high effective bandwidth - especially critical for GPU frame buffers and video decode engines where sequential access patterns dominate. Bank count is fixed and non-configurable in the W63AH6NBVACI.
Is W63AH6NBVACI pin-compatible with other Winbond LPDDR3 devices like W63AH2NBVACI?
No, W63AH6NBVACI is not pin-compatible with W63AH2NBVACI. Although both are 1Gb LPDDR3 devices in 136-ball FBGA packages, W63AH6NBVACI is x16-configured while W63AH2NBVACI is x32-configured - resulting in different DQ/DM ball assignments and incompatible CA bus loading. Board-level substitution requires redesign of memory interface routing and controller configuration.
W63AH6NBVACI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH6NBVACI FAQ
1.How can I place an order for W63AH6NBVACI through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH6NBVACI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH6NBVACI reliable?
The price and inventory of W63AH6NBVACI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH6NBVACI is usually 5 days.
3.What payment methods are accepted for W63AH6NBVACI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH6NBVACI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH6NBVACI?
W63AH6NBVACI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH6NBVACI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH6NBVACI?
For technical support, including W63AH6NBVACI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH6NBVACI requirements.
6.How does Aetrix verify that W63AH6NBVACI is sourced from the original manufacturer or authorized distributors?
All W63AH6NBVACI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH6NBVACI meets industry standards.
7.What is the process for return or replacement of W63AH6NBVACI?
All W63AH6NBVACI units undergo pre-shipment inspection (PSI). If there is an issue with W63AH6NBVACI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH6NBVACI part is unused and in its original packaging.
Return procedure for W63AH6NBVACI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W63AH6NBVACI Tags
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M24C02-WMN6TP
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