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Winbond Electronics Corporation W63AH6NBVACI TR
- Part No.:
- W63AH6NBVACI TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63AH6NBVACI TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,054
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Product details
Overview
W63AH6NBVACI TR from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x32 data bus width, 1.2V VDDQ supply, and 8-bank architecture supporting up to 1066 MT/s data rates. It operates across -40°C to +85°C industrial temperature range and implements on-die termination (ODT), partial array self-refresh (PASR), and CA training for high-speed mobile memory subsystems in application processors and SoCs.
For engineers reviewing the W63AH6NBVACI TR datasheet, W63AH6NBVACI TR pinout, W63AH6NBVACI TR application, or W63AH6NBVACI TR equivalent, key selection criteria include LPDDR3-1066 timing compliance, x32 interface support, industrial-grade thermal operation, and ZQ calibration capability for signal integrity in compact mobile and embedded designs.
Technical Context
This device implements JEDEC-standard LPDDR3 protocol with dual-edge command/address bus, 10-bit CA bus multiplexing, and HSUL_12 I/O interface. It supports burst lengths of 8 and 16, auto-precharge, and deep power-down modes with tCK = 1.875 ns (533 MHz clock).
Functional features include MRW-controlled ODT states, PASR bank/segment masking via MR16/MR17, CA training across MR41–MR42–MR48, and temperature-sensing via MR4 readback. Power management relies on CKE gating, self-refresh, and controlled power-off sequencing per JEDEC JESD209-3B.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB) organized as 8 banks × 16,384 rows × 1,024 columns × 32 bits |
| Data Bus Width | x32 - enables 64-byte cache line transfers per burst, reducing controller-to-memory transaction overhead |
| Max Data Rate | 1066 MT/s - supports LPDDR3-1066 timing mode with tCK = 1.875 ns minimum clock period |
| Supply Voltages | VDD1 = 1.7–1.95 V (core); VDD2/VDDCA/VDDQ = 1.14–1.30 V (I/O) - dual-rail low-power operation |
| Operating Temperature | -40°C to +85°C - qualified for industrial and automotive infotainment applications |
| Interface Standard | JEDEC LPDDR3 (JESD209-3B) compliant - ensures interoperability with ARM Cortex-A series SoCs and mobile APs |
| Power Management | Deep power-down, self-refresh, and partial array self-refresh (PASR) - reduces standby current to ≤15 µA in DPD mode |
Pinout & Package
W63AH6NBVACI TR uses a 134-ball FBGA package (10.5 mm × 13.0 mm × 0.8 mm height) with 0.5 mm ball pitch and RoHS-compliant matte tin finish. Ball assignment follows JEDEC-standard LPDDR3 layout with dedicated VDD/VSS groups, differential clocks (CK_t/CK_c), strobes (DQS_t/DQS_c), and CA bus (CA[9:0]).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | HSUL_12 differential pair referenced to VDDQ; defines all timing windows (tCK = 1.875 ns min) |
| DQS_t / DQS_c | Differential data strobe | Source-synchronous capture aid for DQ[31:0]; supports write leveling and read deskew |
| CA[9:0] | Multiplexed command/address bus | 10-bit double-data-rate bus carrying commands (ACT, PRE, REF), row/column addresses, and bank selects |
| DQ[31:0] | Data I/O lines | x32 bidirectional data bus using HSUL_12 drivers; supports burst lengths of 8 or 16 |
| DM[3:0] | Data mask inputs | Byte-level write masking for DQ[31:0] - each DM bit masks 8 consecutive DQ bits |
| CKE | Command clock enable | Asynchronous active-high input controlling entry/exit from power-down and self-refresh modes |
| ZQ | Calibration reference pin | Connects to 240 Ω ±1 % external resistor for RONPU/RONPD and ODT impedance calibration |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable ODT levels (Rtt_Nom = 34 Ω, 48 Ω, 60 Ω, 120 Ω, 240 Ω) via MR11 - eliminates external termination resistors and improves signal integrity |
| Partial Array Self-Refresh (PASR) | Configurable bank- or segment-level refresh via MR16/MR17 - cuts self-refresh current by up to 75% when only portions of memory are active |
| CA Training | Three-phase training sequence (MR41 → MR42 → MR48) - compensates for CA bus skew and ensures reliable command decoding at 533 MHz |
| ZQ Calibration | One-time or periodic calibration of output driver strength and ODT resistance using external 240 Ω resistor - maintains impedance accuracy over voltage/temperature |
| Temperature Sensor | Integrated sensor readable via MR4 - enables dynamic refresh rate adjustment (tREFI scaling) based on real-time die temperature |
Applications
| Smartphone Application Processor Memory | Automotive Infotainment System RAM |
|---|---|
Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) in flagship smartphones. IC Role / Device Role / Timing Role: LPDDR3-1066 x32 DRAM serving as primary working memory with burst-8 reads/writes synchronized to 533 MHz CK. Use Value: Enables 8.5 GB/s peak bandwidth while maintaining <15 µA deep power-down current for extended battery life during display-off states. |
Use Scenario: Graphics and OS memory buffer in head-unit systems requiring ASIL-B compatible components. IC Role / Device Role / Timing Role: Industrial-temperature LPDDR3 providing deterministic latency and ECC-capable controller interface for QNX/Linux-based HMI stacks. Use Value: -40°C to +85°C operation and PASR support reduce thermal throttling risk and extend refresh interval under sustained GPU load. |
| Industrial Tablet SoC Subsystem | Edge AI Accelerator Local Memory |
Use Scenario: High-reliability memory for ARM Cortex-A72/A76-based tablets deployed in factory automation environments. IC Role / Device Role / Timing Role: x32 LPDDR3 interface with CA training and ZQ calibration ensuring robust command timing across wide voltage (1.14–1.30 V) and temperature ranges. Use Value: CA training mitigates interconnect skew on 6-layer PCBs; PASR lowers average power by 40% during background telemetry polling cycles. |
Use Scenario: On-board memory for vision accelerators (e.g., NPU co-processors) requiring low-latency access to frame buffers and model weights. IC Role / Device Role / Timing Role: Low-jitter LPDDR3-1066 memory supporting tRCD/tRP = 13.5 ns and tRAS = 35 ns for predictable inference pipeline timing. Use Value: HSUL_12 I/O and differential DQS reduce timing uncertainty to <15 ps RMS jitter, enabling sub-100 ns read-to-use latency for real-time object detection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L1G32D2PF-107 WT:A | Same density (1Gb x32), but rated for -25°C to +85°C; uses different CA training flow and lacks MR4 temperature readback | Targeted at consumer tablets; not qualified for extended industrial temperature cycling | Select when cost sensitivity outweighs need for full industrial temp range and integrated thermal sensing |
| IS43TR16128C-125KBL | 1Gb x16 configuration only; supports LPDDR3-1200 (tCK = 1.667 ns); requires separate x2 stacking for x32 equivalent bandwidth | Requires board redesign for x32 interface; higher peak bandwidth but increased layout complexity and power | Choose only if system demands >9.6 GB/s bandwidth and can accommodate dual-die routing and thermal management |
Compared with MT52L1G32D2PF-107 WT:A and IS43TR16128C-125KBL, W63AH6NBVACI TR uniquely combines industrial temperature qualification, integrated temperature sensing, and native x32 interface in a single 134-ball FBGA - simplifying layout, reducing BOM count, and enabling adaptive power management without external sensors.
Availability
W63AH6NBVACI TR is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment systems, and industrial tablet SoC subsystems requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR3 interoperability.
Supply support for W63AH6NBVACI TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for mobile, automotive, and industrial markets.
W63AH6NBVACI TR belongs to Winbond's LPDDR3 product line designed specifically for power-constrained, high-bandwidth mobile and embedded applications where JEDEC compliance, thermal resilience, and advanced power management are critical.
FAQ
What is the maximum supported data rate for W63AH6NBVACI TR?
W63AH6NBVACI TR supports LPDDR3-1066 operation with a minimum clock period (tCK) of 1.875 ns, delivering a maximum data rate of 1066 MT/s. This is validated across the full industrial temperature range (-40°C to +85°C) and requires strict adherence to JEDEC JESD209-3B AC timing parameters including tRCD, tRP, and tRAS.
Does W63AH6NBVACI TR support on-die termination (ODT)?
Yes, W63AH6NBVACI TR supports programmable on-die termination via MR11, offering selectable Rtt_Nom values of 34 Ω, 48 Ω, 60 Ω, 120 Ω, and 240 Ω. This eliminates the need for external termination resistors on DQ and DQS lines and improves signal integrity in high-speed layouts.
How does W63AH6NBVACI TR implement partial array self-refresh (PASR)?
W63AH6NBVACI TR implements PASR through MR16 (bank mask) and MR17 (segment mask), allowing selective refresh of active memory regions only. This reduces self-refresh current significantly - down to ~25% of full-array refresh - while maintaining data retention in targeted banks or segments.
Is CA training required for reliable operation of W63AH6NBVACI TR?
Yes, CA training is mandatory for stable operation at 533 MHz. W63AH6NBVACI TR performs three-phase CA training using MR41, MR42, and MR48 to calibrate command/address timing margins and compensate for interconnect skew, ensuring robust command decoding in dense mobile PCB layouts.
What is the purpose of the ZQ pin on W63AH6NBVACI TR?
The ZQ pin on W63AH6NBVACI TR connects to an external 240 Ω ±1% precision resistor and serves as the reference for ZQ calibration. This process adjusts internal output driver (RONPU/RONPD) and ODT resistance values to maintain impedance accuracy across voltage and temperature variations, critical for signal integrity at 1066 MT/s.
W63AH6NBVACI TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 5.5 ns
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63AH6NBVACI TR FAQ
1.How can I place an order for W63AH6NBVACI TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W63AH6NBVACI TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63AH6NBVACI TR reliable?
The price and inventory of W63AH6NBVACI TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63AH6NBVACI TR is usually 5 days.
3.What payment methods are accepted for W63AH6NBVACI TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63AH6NBVACI TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63AH6NBVACI TR?
W63AH6NBVACI TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63AH6NBVACI TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63AH6NBVACI TR?
For technical support, including W63AH6NBVACI TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63AH6NBVACI TR requirements.
6.How does Aetrix verify that W63AH6NBVACI TR is sourced from the original manufacturer or authorized distributors?
All W63AH6NBVACI TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63AH6NBVACI TR meets industry standards.
7.What is the process for return or replacement of W63AH6NBVACI TR?
All W63AH6NBVACI TR units undergo pre-shipment inspection (PSI). If there is an issue with W63AH6NBVACI TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63AH6NBVACI TR part is unused and in its original packaging.
Return procedure for W63AH6NBVACI TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W63AH6NBVACI TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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