Winbond Electronics Corporation W63AH6NBVADE TR

Overview

W63AH6NBVADE TR from Winbond is a 1Gb (128MB) LPDDR3 SDRAM with x16 data bus, 1.2V VDDQ supply, and 800MHz clock rate (1600MT/s), designed for mobile application processors in smartphones and tablets requiring low-power, high-bandwidth memory interfacing.

For engineers reviewing the W63AH6NBVADE TR datasheet, W63AH6NBVADE TR pinout, W63AH6NBVADE TR application, or W63AH6NBVADE TR equivalent, key selection criteria include LPDDR3 JEDEC compliance, on-die termination (ODT), partial array self-refresh (PASR), CA training support, and HSUL_12 I/O interface timing.

Technical Context

This device implements an 8-bank architecture with dual-edge command/address bus operation, supporting burst lengths of 8 and 16, and features programmable mode registers for configuration of ODT, PASR, temperature sensing, and calibration sequences including CA training and write leveling.

It supports multiple power states - active, precharge power-down, self-refresh, deep power-down - with precise tRFC, tRP, tRCD, and tWR timing parameters defined per JEDEC JESD209-3B, and uses HSUL_12 single-ended signaling for CA/CS_n and differential CK/DQS pairs.

Key Specifications

Pinout & Package

W63AH6NBVADE TR is housed in a 134-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, compliant with JEDEC MO-229WEAA. Ball assignment follows LPDDR3 standard layout with dedicated VDD/VSS groups, HSUL_12 CA/CS_n inputs, differential CK_t/CK_c and DQS_t/DQS_c pairs, and x16 DQ/DM signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR3 memory applications.

Compared with W63AH6NBVADE TR, the Micron alternative offers higher per-device bandwidth but demands PCB redesign, while the Samsung part provides mechanical and basic electrical compatibility but omits advanced CA training - making W63AH6NBVADE TR optimal for new designs requiring full JEDEC-compliant calibration.

Availability

W63AH6NBVADE TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment DRAM applications requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR3 qualification.

Supply support for W63AH6NBVADE TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for mobile and embedded markets.

The W63AH6NB series belongs to Winbond's LPDDR3 product line, engineered specifically for power-constrained mobile platforms demanding high-speed, JEDEC-compliant memory with advanced calibration and power management features.

FAQ

What is the maximum supported data rate for W63AH6NBVADE TR?

The W63AH6NBVADE TR supports a maximum data rate of 1600 MT/s, corresponding to an 800MHz differential clock frequency. This is achieved using double-data-rate transfers on both rising and falling edges of CK_t/CK_c, and is validated across the full operating temperature range (-25°C to +85°C) per JEDEC JESD209-3B specification. The W63AH6NBVADE TR achieves this rate with HSUL_12 I/O signaling and requires proper CA training and write leveling for stable operation.

Does W63AH6NBVADE TR support on-die termination (ODT)?

Yes, W63AH6NBVADE TR supports programmable on-die termination through Mode Register 11 (MR11). It provides configurable ODT settings including RTT_NOM (nominal), RTT_WR (write), and RTT_PARK (park), each selectable per rank. ODT is active during reads, writes, power-down, self-refresh, and CA training - ensuring signal integrity across all operational states. The W63AH6NBVADE TR implements asynchronous ODT control with precise timing alignment relative to command execution.

What package type and dimensions does W63AH6NBVADE TR use?

W63AH6NBVADE TR uses a 134-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 9.0mm × 11.5mm × 0.6mm with 0.5mm ball pitch. This package complies with JEDEC MO-229WEAA and is pin-compatible with industry-standard LPDDR3 x16 devices. The W63AH6NBVADE TR ball map includes dedicated VDDQ/VSS groups, differential clock/strobe pairs, and HSUL_12 command/address inputs - enabling direct integration into mobile PCB layouts.

How does W63AH6NBVADE TR implement partial array self-refresh (PASR)?

W63AH6NBVADE TR implements PASR via Mode Registers 16 (MR16) and 17 (MR17), allowing selective masking of inactive banks or segments during self-refresh. This reduces IDD6 current by up to 75% compared to full-array refresh, significantly extending battery life in mobile standby modes. The W63AH6NBVADE TR supports both bank-level and segment-level masking, with configuration verified through MRR reads from MR16/MR17 after MRW programming.

Is CA training supported on W63AH6NBVADE TR, and how is it configured?

Yes, W63AH6NBVADE TR supports three-stage CA training using Mode Registers MR41, MR42, and MR48. Each stage calibrates command/address timing offsets across voltage and temperature variations, improving setup/hold margin at 1600MT/s. Training is initiated via MRW commands and results are stored in dedicated MR fields; the W63AH6NBVADE TR requires host controller coordination to execute the full sequence, with validation confirmed via MRR reads post-training.