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Winbond Electronics Corporation W63CH2MBVACE
- Part No.:
- W63CH2MBVACE
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 178-VFBGA
- Datasheet:
-
W63CH2MBVACE.pdf
- Description:
- IC DRAM 4GBIT PAR 178VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,385
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Product details
Overview
W63CH2MBV from Winbond is a 4Gb (512MB) LPDDR3 SDRAM with x32 data bus, 1.2V VDDQ supply, and 8-bank architecture, supporting up to 1066MHz data rate (533MHz clock) for mobile application processors in smartphones and tablets.
For engineers reviewing the W63CH2MBV datasheet, W63CH2MBV pinout, W63CH2MBV application, or W63CH2MBV equivalent, key selection criteria include LPDDR3-1066 timing compliance, HSUL_12 I/O interface, on-die termination (ODT), partial array self-refresh (PASR), and ZQ calibration support for signal integrity in high-density mobile memory subsystems.
Technical Context
This device implements a double-data-rate interface on both command/address (CA) and data (DQ/DQS) buses, with CA transferred on both CK edges using HSUL_12 signaling. It supports burst lengths of 8 and 16, auto-precharge, and programmable ODT configurations via MR11.
Power management includes deep power-down, self-refresh, and PASR modes enabled through mode registers MR16–MR17. Calibration features include DQ pattern A/B (MR32/MR40), CA training (MR41–MR42/MR48), and WR leveling (MR43–MR47), all coordinated with ZQ calibration (MR13).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4Gb (512MB), organized as 8 banks × 16,384 rows × 1,024 columns × 32 bits |
| Data Rate | 1066 MT/s (533MHz clock), compliant with JEDEC JESD209-3B LPDDR3 standard |
| VDDQ Supply | 1.2V ±3% (1.14V–1.30V), enabling low-power operation in battery-constrained devices |
| I/O Interface | HSUL_12 signaling for CA and DQ/DQS, reducing noise and improving timing margin at high speed |
| Burst Length | Configurable BL8 or BL16, supporting efficient sequential access for multimedia and OS workloads |
| Refresh Interval | 3.9μs at 85°C (tREFI), with temperature-compensated refresh (MR4) for thermal reliability |
| Operating Temp | -25°C to +85°C (commercial grade), validated for smartphone main memory use cases |
Pinout & Package
W63CH2MBV uses a 136-ball FBGA package (10mm × 12mm × 0.8mm, ball pitch 0.5mm) with HSUL_12-compatible ball assignment per JEDEC MO-229WAA.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | HSUL_12 differential pair; defines system timing reference for all CA and DQ operations |
| CA[9:0] | Command/Address bus | 10-bit multiplexed bus transferring commands, row/column addresses, and bank selects on both CK edges |
| DQ[31:0] | Data I/O | 32-bit bidirectional data bus with programmable drive strength and ODT control |
| DQS_t / DQS_c | Differential strobe | Source-synchronous read/write strobe pair aligned to DQ edges for timing capture |
| ODT | On-die termination enable | Dynamic ODT control via MR11; supports RTT_NOM, RTT_WR, and RTT_PARK configurations |
| ZQ | Calibration reference | External 240Ω ±1% resistor connection point for RONPU/RONPD and ODT impedance calibration |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces refresh current by masking inactive banks/segments (MR16–MR17), cutting IDD6 by up to 40% during light-load states |
| ZQ Calibration | Enables dynamic output driver and ODT impedance tuning against voltage/temperature drift, maintaining signal integrity across operating conditions |
| CA Training Mode | Compensates for CA bus skew via MR41–MR42/MR48, ensuring reliable command decoding at 533MHz clock rates |
| Write Leveling | Adjusts DQS-to-CK phase alignment (MR43–MR47) to meet tDQSS setup/hold windows under PCB trace length mismatch |
| Deep Power-Down | Enters ultra-low-current state (<10μA) with full context retention, enabling rapid wake-up without reinitialization |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary DRAM for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) executing Android OS and multitasking applications. IC Role / Device Role / Timing Role: High-bandwidth, low-latency main memory interfacing directly with CPU/GPU memory controllers via LPDDR3-1066 bus. Use Value: Enables 1066MT/s sustained bandwidth with PASR and deep power-down to extend battery life during background app execution and screen-off states. | Use Scenario: System memory in 7–10 inch tablets requiring higher capacity than smartphones while maintaining thermal envelope constraints. IC Role / Device Role / Timing Role: x32 LPDDR3 interface supporting dual-channel memory controllers for improved throughput in media-rich UI rendering. Use Value: Delivers 8.5GB/s peak bandwidth with HSUL_12 signaling and CA training to maintain signal integrity across longer PCB traces typical in tablet form factors. |
| Automotive Infotainment Head Unit | Industrial Human-Machine Interface (HMI) |
Use Scenario: Memory subsystem for QNX- or Android Automotive–based infotainment systems with real-time navigation, voice recognition, and video playback. IC Role / Device Role / Timing Role: Temperature-rated (–25°C to +85°C) LPDDR3 buffer for graphics and application processing cores. Use Value: Supports temperature-compensated refresh (MR4) and robust CA training to ensure reliable operation across vehicle cabin temperature swings. | Use Scenario: Embedded display controller memory in factory-floor HMIs requiring long-term availability and stable power behavior. IC Role / Device Role / Timing Role: Low-voltage (1.2V VDDQ), low-IDD6 memory supporting extended idle periods between operator interactions. Use Value: Reduces system standby power via deep power-down mode and PASR, meeting industrial energy-efficiency certifications without compromising boot-time latency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR3 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT52L256M32D1PF-107 | Same 4Gb x32 LPDDR3-1066 density and 136FBGA package; differs in VDDQ range (1.14–1.26V vs. 1.14–1.30V) and MR register mapping for PASR | Optimized for Micron's portfolio of automotive-grade LPDDR3; requires validation of MR16–MR17 bit definitions for PASR bank masking | Preferred when sourcing from Micron-authorized channels or when matching existing Micron-based BOMs |
| K4E6E304EC-EGCF | 4Gb x32 LPDDR3-1066 in 136FBGA; uses different ZQ calibration sequence timing and lacks MR48 CA training register | Targeted for Samsung Exynos platforms; CA training must be performed using MR41–MR42 only, limiting skew compensation depth | Recommended for designs already using Samsung memory controllers with proven CA training flow |
Compared with MT52L256M32D1PF-107 and K4E6E304EC-EGCF, the W63CH2MBV provides broader VDDQ tolerance, full MR41–MR48 CA training support, and identical PASR implementation per JEDEC JESD209-3B - making it suitable for flexible controller-agnostic LPDDR3 integration where calibration robustness and voltage margin are critical.
Availability
W63CH2MBV is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head unit designs requiring stable component supply and long-term lifecycle support.
Supply support for W63CH2MBV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The W63CH2MBV belongs to Winbond's LPDDR3 product line, designed specifically for power-constrained mobile and embedded systems requiring JEDEC-compliant high-speed DRAM with advanced power management and signal integrity features.
FAQ
What is the maximum data rate supported by the W63CH2MBV?
The W63CH2MBV supports a maximum data rate of 1066 MT/s (megatransfers per second), corresponding to a 533MHz clock frequency. This performance level complies fully with the JEDEC JESD209-3B LPDDR3 standard and is validated across the commercial temperature range (–25°C to +85°C). The W63CH2MBV achieves this rate using HSUL_12 I/O signaling and precise timing control via its mode register configuration.
Does the W63CH2MBV support on-die termination (ODT)?
Yes, the W63CH2MBV supports programmable on-die termination through MR11 (MA[7:0] = 0BH), allowing dynamic configuration of RTT_NOM, RTT_WR, and RTT_PARK values. ODT is active during read, write, power-down, self-refresh, deep power-down, and CA training operations. The W63CH2MBV's ODT levels are calibrated using the external ZQ resistor and can be adjusted in real time to match system impedance requirements.
How does the W63CH2MBV implement partial array self-refresh (PASR)?
The W63CH2MBV implements PASR via two dedicated mode registers: MR16 (MA[7:0] = 10H) for bank-level masking and MR17 (MA[7:0] = 11H) for segment-level masking. This allows selective refresh of only active memory regions, reducing IDD6 current by up to 40% compared to full-array self-refresh. The W63CH2MBV's PASR functionality is fully JEDEC-compliant and requires no external controller modification beyond MR write sequences.
What package type and dimensions does the W63CH2MBV use?
The W63CH2MBV uses a 136-ball fine-pitch ball grid array (FBGA) package conforming to JEDEC MO-229WAA, measuring 10mm × 12mm × 0.8mm with 0.5mm ball pitch. This package supports high-density mobile PCB layouts and is compatible with standard LPDDR3 layout guidelines for signal integrity and thermal management. The W63CH2MBV's ball assignment matches JEDEC LPDDR3 specification for CA, DQ, and power/ground pin placement.
Can the W63CH2MBV operate with a 1.25V VDDQ supply?
Yes, the W63CH2MBV supports VDDQ operation within 1.14V to 1.30V, making 1.25V a fully valid and commonly used supply voltage. This range ensures compatibility with typical PMIC outputs for LPDDR3 interfaces and accommodates voltage droop under transient load. All AC timing specifications, including tDS/tDH and tDQSS, are guaranteed across this entire VDDQ window, and the W63CH2MBV's ZQ calibration adapts automatically to maintain impedance accuracy at 1.25V.
W63CH2MBVACE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 178-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR3
- Memory Size:
- 4Gbit
- Memory Organization:
- 128M x 32
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 178-VFBGA (11x11.5)
W63CH2MBVACE FAQ
1.How can I place an order for W63CH2MBVACE through Aetrix?
Please submit a Request for Quotation (RFQ) for W63CH2MBVACE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W63CH2MBVACE reliable?
The price and inventory of W63CH2MBVACE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W63CH2MBVACE is usually 5 days.
3.What payment methods are accepted for W63CH2MBVACE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W63CH2MBVACE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W63CH2MBVACE?
W63CH2MBVACE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W63CH2MBVACE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W63CH2MBVACE?
For technical support, including W63CH2MBVACE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W63CH2MBVACE requirements.
6.How does Aetrix verify that W63CH2MBVACE is sourced from the original manufacturer or authorized distributors?
All W63CH2MBVACE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W63CH2MBVACE meets industry standards.
7.What is the process for return or replacement of W63CH2MBVACE?
All W63CH2MBVACE units undergo pre-shipment inspection (PSI). If there is an issue with W63CH2MBVACE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W63CH2MBVACE part is unused and in its original packaging.
Return procedure for W63CH2MBVACE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W63CH2MBVACE Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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