Winbond Electronics Corporation W63CH6MBVACE

Overview

W63CH6MBVACE from Winbond is a 4Gb (512MB) LPDDR3 SDRAM with x32 data bus, 1.2V VDDQ/VDDCA operation, and 8-bank architecture supporting up to 1066 MT/s data rates. It implements on-die termination (ODT), partial array self-refresh (PASR), CA training, and ZQ calibration for mobile SoC memory interfaces in smartphones and tablets.

For engineers reviewing the W63CH6MBVACE datasheet, W63CH6MBVACE pinout, W63CH6MBVACE application, or W63CH6MBVACE equivalent, key selection criteria include LPDDR3-1066 timing compliance, HSUL_12 I/O interface, 1.2V core/I/O voltage separation, and 176-ball FBGA package compatibility with mobile platform memory controllers.

Technical Context

This device operates as a double-data-rate synchronous DRAM with command/address bus multiplexed over 10 pins using both clock edges. It supports burst lengths of 8 and 16, auto-precharge, and programmable mode registers for configuration of ODT, PASR, temperature sensing, and calibration sequences.

Power management includes deep power-down, self-refresh, and partial array self-refresh modes with IDD6 current specified at 85°C. Timing compliance covers tCK(avg) = 0.938ns (1066 MT/s), tRCD/tRP = 13.5ns, and tRC = 48ns under standard operating conditions.

Key Specifications

Pinout & Package

W63CH6MBVACE is housed in a 176-ball Fine-Pitch Ball Grid Array (FBGA) package with 0.65 mm ball pitch, measuring 12.0 mm × 10.0 mm × 1.0 mm (max). The package complies with JEDEC MO-229 and supports automated optical inspection and reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR3 memory applications.

Compared with W63CH6MBVACE, MT52L256M32D1PF-107 offers simpler initialization but less thermal adaptability, while K4E6E304EC-EGCF delivers higher speed at the cost of increased timing sensitivity-making W63CH6MBVACE optimal for balanced power-performance trade-offs in mid-tier mobile designs.

Availability

W63CH6MBVACE is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and embedded automotive infotainment DRAM applications requiring stable component supply, long-term lifecycle support, and JEDEC LPDDR3-1066 compliance.

Supply support for W63CH6MBVACE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.

W63CH6MBVACE belongs to Winbond's LPDDR3 product line designed specifically for power-constrained mobile platforms requiring high bandwidth, low standby current, and robust JEDEC-compliant interface reliability.

FAQ

What is the ball count and package type of W63CH6MBVACE?

W63CH6MBVACE uses a 176-ball Fine-Pitch Ball Grid Array (FBGA) package with 0.65 mm pitch and 12.0 mm × 10.0 mm body size. This JEDEC MO-229-compliant package supports automated assembly and thermal performance suitable for mobile PCBs with tight spacing constraints. The ball map is fully documented in Section 4 ("Ball Assignment") of the official datasheet.

Does W63CH6MBVACE support on-die termination (ODT), and how is it configured?

Yes, W63CH6MBVACE supports programmable on-die termination with selectable RON values of 40 Ω, 60 Ω, and 120 Ω via Mode Register 11 (MR11). ODT is controlled per-bank and can be enabled during reads, writes, or power-down states. Configuration requires MRW command with MA[7:0] = 0BH and appropriate BA address selection.

What is the maximum supported data rate for W63CH6MBVACE, and what timing parameter defines it?

W63CH6MBVACE supports up to 1066 MT/s, defined by tCK(avg) = 0.938 ns - the average clock period between consecutive CK transitions. This value is validated under VDDQ = 1.2V, TA = 25°C, and includes jitter allowances per JEDEC JESD209-3 specification. AC timing parameters such as tRCD and tRP scale linearly with tCK.

How does W63CH6MBVACE implement partial array self-refresh (PASR)?

W63CH6MBVACE implements PASR through Mode Registers MR16 (bank mask) and MR17 (segment mask), allowing selective refresh of active memory regions only. This reduces IDD6 current during idle periods - e.g., display hold or background audio playback - without compromising data retention in used banks or segments.

Is CA training required for reliable operation of W63CH6MBVACE, and which registers control it?

Yes, CA training is mandatory for stable 1066 MT/s operation of W63CH6MBVACE due to timing skew across the 10-bit CA bus. Training is executed via MR41, MR42, and MR48 registers using MRW commands. The sequence calibrates CA setup/hold timing relative to CK and must be performed after power-up and before normal command issuance.