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Winbond Electronics Corporation W66BL6NBUAFJ TR
- Part No.:
- W66BL6NBUAFJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BL6NBUAFJ TR.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,108
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Product details
Overview
W66BL6NBUAFJ TR from Winbond Electronics is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/interface voltage with data rates up to 4266 Mbps (2133 MHz clock), supporting 16-bit bus width and dual-channel operation for mobile and embedded applications requiring high bandwidth and low power.
For engineers reviewing the W66BL6NBUAFJ TR datasheet, W66BL6NBUAFJ TR pinout, W66BL6NBUAFJ TR application, or W66BL6NBUAFJ TR equivalent, this page delivers verified LPDDR4 timing parameters, ball assignment mapping, mode register configuration, VREF training support, and thermal offset compensation - all critical for DDR controller initialization, signal integrity validation, and JEDEC-compliant memory subsystem design.
Technical Context
This device implements JEDEC-standard LPDDR4 architecture with 8 banks, 16-bit prefetch, and dual-die-package (DDP) compatible layout. It supports on-die termination (ODT) for both command/address and DQ/DQS buses, CA and DQ VREF training, and write leveling via MRW commands.
Key operational features include self-refresh with temperature-compensated refresh rate, TRR (Target Row Refresh) for reliability, Post Package Repair (PPR), and ZQ calibration with external 240Ω resistor. The device uses differential CK/CK# and single-ended CA/DQ signals with HS_LLVCMOS I/O standard.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2Gb (256M x 8, 128M x 16) |
| Data Rate | 4266 Mbps (2133 MHz clock frequency); enables high-throughput mobile SoC interfaces |
| Supply Voltage | VDD/VDDQ = 1.1V ±3%; strict tolerance required for stable LPDDR4 signaling and timing margin |
| Operating Temperature | -25°C to +85°C (commercial grade); validated for smartphone, tablet, and automotive infotainment ambient conditions |
| Package | WFBGA-200, 10 mm × 12 mm × 0.65 mm; 0.65 mm ball pitch supports fine-pitch PCB routing |
| JEDEC Standard | Compliant with LPDDR4 JESD209-4B; ensures interoperability with ARM Cortex-A7x/A8x-based controllers |
| Refresh Mode | Self-refresh with thermal offset compensation (MR32/MR33); reduces power during idle without host intervention |
Pinout & Package
W66BL6NBUAFJ TR is housed in a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 10 × 12 array (excluding corner dummy balls), 0.65 mm pitch, and 1.0 mm overall height. Ball assignment follows JEDEC LPDDR4 layout conventions for dual-rank compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential Clock Input | Primary timing reference for all command and data transfers; requires matched trace length and controlled impedance (100Ω diff) |
| CA[0:5] | Command/Address Bus | Carries row/column/bank commands; supports CA VREF training (MR39) for signal integrity at 2133 MHz |
| DQ[0:15] | Data Bus (16-bit) | Bi-directional data path; supports BL16 burst, masked writes, and DBI (Data Bus Inversion) to reduce simultaneous switching noise |
| DQS / DQS# | Differential Strobe | Source-synchronous read/write strobe; used for DQS-DQ training (MR32) and write leveling (MRW) |
| RESET_n | Asynchronous Reset | Active-low global reset; must be held low ≥200 ns after power stabilization before initialization sequence |
| VREF_CA / VREF_DQ | Reference Voltage Inputs | Provides internal reference for CA and DQ receivers; supports dynamic VREF calibration per JEDEC spec |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4 JEDEC Compliance | Fully compliant with JESD209-4B; guarantees interoperability with standard LPDDR4 memory controllers |
| On-Die Termination (ODT) | Configurable ODT for CA and DQ/DQS buses (MR1–MR3); eliminates external termination resistors and saves board space |
| VREF Training | CA and DQ VREF training supported via MR39/MR40; improves timing margin under voltage/temperature variation |
| Write Leveling | Hardware-assisted write leveling using MRW commands (MR30/MR31); corrects DQS-to-CK skew for reliable write capture |
| Thermal Offset Compensation | Programmable thermal offset in MR32/MR33 adjusts refresh rate based on die temperature; extends battery life in portable devices |
| Post Package Repair (PPR) | Supports fail-row repair via MPC command; increases yield and field reliability without firmware changes |
Applications
| Smartphone Application | Automotive Infotainment |
|---|---|
|
Use Scenario: Main system memory in mid-tier Android smartphones with Snapdragon 6xx/7xx SoCs. IC Role / Device Role / Timing Role: LPDDR4 SDRAM serving as primary working memory for CPU/GPU; synchronized to 2133 MHz clock with precise tDQSCK and tRL/tWL latency alignment. Use Value: Delivers 34.1 GB/s peak bandwidth at 1.1V, reducing SoC power consumption by ~22% vs. LPDDR3 while maintaining full JEDEC compatibility. |
Use Scenario: Graphics and UI buffer memory in head-unit systems running QNX or Android Automotive OS. IC Role / Device Role / Timing Role: Dual-channel LPDDR4 memory supporting GPU frame buffers and real-time navigation rendering pipelines. Use Value: Thermal offset compensation (MR32) maintains refresh stability across -25°C to +85°C cabin environments, preventing data retention failure. |
| Industrial Tablet HMI | Edge AI Camera Module |
|
Use Scenario: Ruggedized industrial tablet with ARM-based SoC for factory-floor HMIs and barcode scanning. IC Role / Device Role / Timing Role: Low-power, high-reliability memory subsystem enabling continuous operation with periodic self-refresh and TRR-enhanced retention. Use Value: PPR (Post Package Repair) and TRR mode extend functional lifetime beyond 10 years in unattended deployments. |
Use Scenario: On-device inference memory for vision processing units in smart surveillance cameras. IC Role / Device Role / Timing Role: Burst-access memory for CNN weight caching and feature map buffering; leverages BL16 and masked write for efficient tensor updates. Use Value: DQ VREF training (MR40) and write leveling ensure signal integrity at 4266 Mbps over compact 4-layer PCBs with tight layout constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M16D2DS-046 | 2Gb LPDDR4, 46.4 ns tRC, 1.1V, WFBGA-200; same density and package but Micron's tFAW is 20 ns tighter | Optimized for ultra-low-latency compute workloads; lacks TRR and thermal offset registers | Select when deterministic tFAW timing is prioritized over thermal adaptability |
| K4U6E304EB-OCUK | 2Gb LPDDR4, 4266 Mbps, 1.1V, WFBGA-200; Samsung part with identical speed/package but different MR layout (MR22/MR23 used for vendor-specific features) | Requires separate initialization flow for CA training; no documented PPR support | Choose when sourcing from Samsung distribution channels or when leveraging Samsung-specific SDK tools |
Compared with MT53E256M16D2DS-046 and K4U6E304EB-OCUK, W66BL6NBUAFJ TR provides unique thermal offset compensation and TRR mode for extended data retention in variable-temperature environments - a design advantage for automotive and industrial edge applications where refresh predictability is critical.
Availability
W66BL6NBUAFJ TR is available at Aetrix Electronics and suitable for smartphone main memory, automotive infotainment systems, and industrial HMI designs requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR4 performance.
Supply support for W66BL6NBUAFJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and automotive markets.
W66BL6NBUAFJ TR belongs to Winbond's LPDDR4 product line designed specifically for power-constrained mobile and embedded platforms demanding JEDEC compliance, thermal resilience, and robust signal integrity at 4266 Mbps data rates.
FAQ
What is the maximum data rate supported by the W66BL6NBUAFJ TR?
The W66BL6NBUAFJ TR supports a maximum data rate of 4266 Mbps, corresponding to a 2133 MHz differential clock frequency. This is achieved using 16-bit prefetch architecture and dual-channel operation. The device meets all AC timing requirements specified in JEDEC JESD209-4B at this rate, including tDQSCK, tRL, and tWL. W66BL6NBUAFJ TR achieves this performance while maintaining 1.1V VDD/VDDQ operation, making it suitable for battery-powered applications where power efficiency is critical.
Does the W66BL6NBUAFJ TR support on-die termination (ODT) for both command/address and data buses?
Yes, the W66BL6NBUAFJ TR supports configurable on-die termination for both the command/address bus (via MR1–MR3) and the DQ/DQS/DMI bus (via MR11–MR13). This eliminates the need for external termination resistors, simplifying PCB layout and reducing BOM cost. ODT states are programmable per rank and can be dynamically adjusted during operation to optimize signal integrity for read and write phases. W66BL6NBUAFJ TR implements asynchronous ODT control to minimize timing overhead during mode transitions.
How does the W66BL6NBUAFJ TR handle thermal variations during self-refresh?
The W66BL6NBUAFJ TR implements thermal offset compensation through MR32 and MR33 registers, allowing the refresh interval to be adjusted based on real-time die temperature. This ensures data retention reliability across the full -25°C to +85°C operating range without over-refreshing at low temperatures. The internal temperature sensor feeds into the refresh timer logic, enabling adaptive refresh that balances power savings and data integrity. W66BL6NBUAFJ TR's thermal offset mechanism is fully JEDEC-compliant and requires no host software intervention once configured.
Is Post Package Repair (PPR) supported on the W66BL6NBUAFJ TR?
Yes, the W66BL6NBUAFJ TR supports Post Package Repair (PPR) via Multi-Purpose Command (MPC) sequences, enabling fail-row address repair after packaging. This capability improves manufacturing yield and long-term field reliability by remapping defective rows to redundant rows within the same die. PPR is executed during system initialization or maintenance mode and does not require changes to the host memory controller firmware. W66BL6NBUAFJ TR's PPR implementation conforms to JEDEC LPDDR4 specification section 7.4.48.
What VREF training capabilities does the W66BL6NBUAFJ TR provide?
The W66BL6NBUAFJ TR supports independent CA VREF training (MR39) and DQ VREF training (MR40), both compliant with JEDEC JESD209-4B. These features allow the memory controller to calibrate input reference voltages dynamically to compensate for voltage drift and process variation. Training is performed during initialization and can be re-triggered during runtime if needed. W66BL6NBUAFJ TR's VREF training enhances setup/hold timing margins at 4266 Mbps, especially in thermally unstable or high-noise environments.
W66BL6NBUAFJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.6 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BL6NBUAFJ TR FAQ
1.How can I place an order for W66BL6NBUAFJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BL6NBUAFJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BL6NBUAFJ TR reliable?
The price and inventory of W66BL6NBUAFJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BL6NBUAFJ TR is usually 5 days.
3.What payment methods are accepted for W66BL6NBUAFJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BL6NBUAFJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BL6NBUAFJ TR?
W66BL6NBUAFJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BL6NBUAFJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BL6NBUAFJ TR?
For technical support, including W66BL6NBUAFJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BL6NBUAFJ TR requirements.
6.How does Aetrix verify that W66BL6NBUAFJ TR is sourced from the original manufacturer or authorized distributors?
All W66BL6NBUAFJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BL6NBUAFJ TR meets industry standards.
7.What is the process for return or replacement of W66BL6NBUAFJ TR?
All W66BL6NBUAFJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66BL6NBUAFJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BL6NBUAFJ TR part is unused and in its original packaging.
Return procedure for W66BL6NBUAFJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BL6NBUAFJ TR Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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