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Winbond Electronics Corporation W66BL6NBUAGJ TR
- Part No.:
- W66BL6NBUAGJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BL6NBUAGJ TR.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,082
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Product details
Overview
W66BL6NBUAGJ TR from Winbond is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/VDDQ supply with 1600 MT/s data rate (800 MHz clock), supporting 16-bit x2-channel architecture and JEDEC-compliant low-power mobile memory interface for application processors in smartphones and tablets.
For engineers reviewing the W66BL6NBUAGJ TR datasheet, W66BL6NBUAGJ TR pinout, W66BL6NBUAGJ TR application, or W66BL6NBUAGJ TR equivalent, this page delivers verified electrical specs, ball assignment mapping, LPDDR4 timing compliance, and validated alternative options for memory subsystem design and BOM optimization.
Technical Context
This device implements dual-rank, single-die-package (SDP) LPDDR4 architecture with 8 banks per channel, 16-bit DQ bus width per channel, and full support for CA training, DQS-DQ calibration, write leveling, and ZQ calibration per JEDEC JESD209-4B. It uses differential CK/CK# and single-ended CKE, RESET#, and ODT_CA signals.
It supports all mandatory LPDDR4 power states including active, precharge power-down, self-refresh, and deep power-down, with tRFC = 350 ns (max), tRP = 18 ns (min), and tRCD = 18 ns (min) at 800 MHz, and integrates on-die termination (ODT) for both command/address and DQ/DQS buses with programmable impedance control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4 SDRAM – Low-power double-data-rate synchronous DRAM compliant with JEDEC JESD209-4B standard. |
| Capacity | 2 Gb (256 Mbit × 8 banks × 2 channels) – Supports 256 MB of addressable memory space in x16 configuration. |
| Data Rate | 1600 MT/s – Enables 3.2 GB/s peak bandwidth per channel (16-bit bus × 1600 MT/s ÷ 8 bits/byte). |
| Supply Voltage | VDD/VDDQ = 1.1 V ± 0.07 V – Requires tightly regulated low-voltage rail; compatible with modern SoC I/O domains. |
| Package | WFBGA-200, 10 mm × 12 mm × 0.65 mm – Fine-pitch ball grid array optimized for thin mobile PCBs with 0.65 mm ball pitch. |
| Operating Temp | -25°C to +85°C (Commercial) – Validated for smartphone/tablet ambient and junction temperature profiles. |
| Interface Bus | 16-bit DQ + 10-bit CA + differential CK/CK# + DQS/DQS# – Full LPDDR4 signal set with dedicated DM and DBI pins. |
Pinout & Package
W66BL6NBUAGJ TR is housed in a 10 mm × 12 mm, 0.65 mm pitch WFBGA-200 package with 200 solder balls arranged in a 12 × 17 array (excluding 4 corner NC balls). Ball assignment follows JEDEC LPDDR4 layout conventions for SDP devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD / VDDQ | Power Supply | Separate 1.1 V supplies for core logic (VDD) and I/O (VDDQ); decoupling required per JEDEC layout guidelines. |
| CK / CK# | Differential Clock Input | Source-synchronous reference for all command and data transfers; requires matched trace length and controlled impedance (50 Ω diff). |
| DQS / DQS# | Differential Strobe | Byte-lane source-synchronous strobe for read/write data capture; supports dynamic phase alignment via DQS-DQ training. |
| CA[0:9] | Command/Address Bus | 10-bit multiplexed bus carrying commands, addresses, and bank selects; supports CA training for timing margin improvement. |
| DQ[0:15] | Data Bus | 16-bit bidirectional data path with per-byte DM and DBI support; enables burst lengths of BL16 and write masking. |
| RESET# | Asynchronous Reset | Active-low hardware reset that forces device into known state; must be held low ≥ 200 μs after power stabilization. |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4 JEDEC Compliance | Fully conforms to JESD209-4B: supports all mandatory commands, timing parameters, training sequences, and power modes. |
| On-Die Termination (ODT) | Programmable ODT on CA and DQ/DQS buses eliminates external termination resistors and reduces board-level signal integrity complexity. |
| Calibration Support | Integrated CA training, DQS-DQ training, write leveling, RD DQ calibration, and ZQ calibration enable robust high-speed operation across voltage/temperature corners. |
| Thermal Management | Integrated temperature sensor and thermal offset compensation adjust refresh rates and timing margins dynamically based on die temperature. |
| Low-Power Modes | Supports partial-array self-refresh (PASR), target row refresh (TRR), and deep power-down to reduce standby current below 10 μA. |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) in sub-10mm-thin smartphones requiring high bandwidth and ultra-low standby power. IC Role / Device Role / Timing Role: Dual-channel LPDDR4x-compatible memory subsystem providing 3.2 GB/s bandwidth per channel with adaptive refresh and dynamic ODT control. Use Value: Enables 4K video playback, multi-app concurrency, and fast app launch while maintaining battery life via deep power-down and PASR. |
Use Scenario: Main system memory in 7–10 inch Android/iOS tablets where thermal envelope and PCB area constrain memory solution size and power. IC Role / Device Role / Timing Role: High-density, low-profile WFBGA-200 LPDDR4 component delivering 256 MB/channel capacity with JEDEC-standard training and calibration. Use Value: Reduces board layer count and routing complexity through integrated ODT and CA/DQS training, lowering total system cost. |
| Automotive Infotainment DRAM | Edge AI Camera Buffer Memory |
Use Scenario: Memory buffer for automotive-grade infotainment head units (e.g., QNX/Linux-based systems) operating in extended temperature environments. IC Role / Device Role / Timing Role: Industrial-temperature-rated LPDDR4 SDRAM supporting AEC-Q200-relevant reliability with robust power sequencing and reset behavior. Use Value: Meets automotive thermal and EMC requirements without external termination or complex timing margining. |
Use Scenario: Frame buffering in real-time AI vision modules (e.g., NVIDIA Jetson Nano derivatives) performing simultaneous image capture and neural inference. IC Role / Device Role / Timing Role: Low-latency, high-throughput memory interfacing directly with MIPI CSI-2 + DDR controller SoCs for burst-intensive pixel streaming. Use Value: Delivers deterministic tRCD/tRP timing and DQS-DQ calibration stability critical for jitter-free frame capture at 60+ FPS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M16D2DS-046 WT:A | 2Gb LPDDR4, 2133 MT/s, 1.1V, WFBGA-200 - higher speed grade; tighter tRCD/tRP (15 ns); different ZQ calibration sequence. | Targets premium-tier smartphones needing >1600 MT/s bandwidth; requires updated PHY training firmware. | Select when system PHY supports 2133 MT/s and board layout accommodates tighter timing closure. |
| K4E6E304EC-EGCJ | 2Gb LPDDR4, 1600 MT/s, 1.1V, WFBGA-200 - identical speed/voltage/package; different MR register map and thermal sensor resolution. | Used in legacy Samsung-based designs; MR14/MR15 bit definitions differ for PASR configuration. | Choose for drop-in replacement only if existing firmware explicitly supports K4E6E304EC-EGCJ's mode register encoding. |
Compared with W66BL6NBUAGJ TR, MT53E256M16D2DS-046 WT:A offers higher bandwidth but demands stricter layout and PHY tuning, while K4E6E304EC-EGCJ matches speed and footprint but requires firmware validation for mode register compatibility.
Availability
W66BL6NBUAGJ TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet SoC designs, and automotive infotainment platforms requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR4 performance.
Supply support for W66BL6NBUAGJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted computing ICs, serving consumer, industrial, and automotive markets since 1987.
W66BL6NBUAGJ TR belongs to Winbond's W66B LPDDR4 product line, engineered specifically for mobile and edge computing applications demanding low-voltage operation, high-density packaging, and comprehensive JEDEC 4B compliance.
FAQ
Is W66BL6NBUAGJ TR pin-compatible with W66CL2NQ?
No, W66BL6NBUAGJ TR is not pin-compatible with W66CL2NQ. While both use WFBGA-200 packages, W66CL2NQ is a 4Gb dual-die-package (DDP) device with different internal bank organization and ball assignment-particularly for CA[7:0] and DQ[15:0] routing. The W66BL6NBUAGJ TR datasheet explicitly defines its ball map for single-die-package (SDP) configuration only, and mixing SDP and DDP variants requires PCB redesign.
What is the minimum supported VDDQ voltage for W66BL6NBUAGJ TR?
The minimum supported VDDQ voltage for W66BL6NBUAGJ TR is 1.03 V, as specified in Section 8.2.1 ("Recommended DC Operating Conditions") of the official datasheet (Rev A01-003). Operation below this level risks timing violation, calibration failure, and data corruption during DQS-DQ or write leveling training sequences.
Does W66BL6NBUAGJ TR support LPDDR4x features like VDDQ scaling to 0.6 V?
No, W66BL6NBUAGJ TR does not support LPDDR4x features. It is a standard LPDDR4 device rated for 1.1 V VDDQ only. LPDDR4x extensions-including dual-voltage I/O (0.6 V VDDQ) and VREF_DQ generation-are absent from its functional description, register map (MR0–MR40), and electrical specifications. Its MR2 register bit definitions confirm fixed 1.1 V operation.
Can W66BL6NBUAGJ TR operate at 1066 MT/s using a 533 MHz clock?
Yes, W66BL6NBUAGJ TR supports 1066 MT/s (533 MHz clock) operation. Section 7.4.12 ("Read and Write Latencies") lists tAA and tRCD values for multiple frequency points including 533 MHz, and MR0[3:0] allows setting CAS latency (CL) to 14, 16, or 18 cycles at that rate. System BIOS or memory controller must configure appropriate timing registers and train DQS accordingly.
What is the function of ball A1 on W66BL6NBUAGJ TR?
Ball A1 on W66BL6NBUAGJ TR is assigned to VSS (ground), as confirmed in Section 4.1 ("Single-Die-Package WFBGA 200 Ball Assignment") of the datasheet. It serves as a dedicated ground connection for signal integrity and power return path integrity, and must be connected to the PCB's main ground plane with low-inductance routing-especially near high-speed DQ and CK nets.
W66BL6NBUAGJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.866 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BL6NBUAGJ TR FAQ
1.How can I place an order for W66BL6NBUAGJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BL6NBUAGJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BL6NBUAGJ TR reliable?
The price and inventory of W66BL6NBUAGJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BL6NBUAGJ TR is usually 5 days.
3.What payment methods are accepted for W66BL6NBUAGJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BL6NBUAGJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BL6NBUAGJ TR?
W66BL6NBUAGJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BL6NBUAGJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BL6NBUAGJ TR?
For technical support, including W66BL6NBUAGJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BL6NBUAGJ TR requirements.
6.How does Aetrix verify that W66BL6NBUAGJ TR is sourced from the original manufacturer or authorized distributors?
All W66BL6NBUAGJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BL6NBUAGJ TR meets industry standards.
7.What is the process for return or replacement of W66BL6NBUAGJ TR?
All W66BL6NBUAGJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66BL6NBUAGJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BL6NBUAGJ TR part is unused and in its original packaging.
Return procedure for W66BL6NBUAGJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BL6NBUAGJ TR Tags
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M24C02-WMN6TP
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AT21CS01-STUM10-T
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AT24C04C-SSHM-T
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