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Winbond Electronics Corporation W66BL6NBUAHJ TR
- Part No.:
- W66BL6NBUAHJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BL6NBUAHJ TR.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,929
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Product details
Overview
W66BL6NBUAHJ TR from Winbond is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/VDDQ supply with 4266 Mbps data rate per pin (2133 MHz clock), supporting 16-bit x2-channel architecture and JEDEC-compliant low-power mobile memory interface for smartphone application processors.
For engineers reviewing the W66BL6NBUAHJ TR datasheet, W66BL6NBUAHJ TR pinout, W66BL6NBUAHJ TR application, or W66BL6NBUAHJ TR equivalent, key selection criteria include LPDDR4-4266 timing compliance, dual-die-package (DDP) configuration support, on-die termination for DQ/DQS/DMI, CA VREF and DQ VREF training capability, and thermal offset compensation for mobile SoC integration.
Technical Context
The W66BL6NBUAHJ TR implements JEDEC LPDDR4 standard JESD209-4B with 8-bank architecture, supports burst lengths of BL16 and BL32, and features programmable mode registers (MR0–MR40) for fine-grained control of read/write latencies, refresh modes (including TRR), and power-down entry/exit sequences.
It integrates command bus training, RD DQ calibration, DQS-DQ training, ZQ calibration, and temperature-sensor-assisted thermal offset correction to maintain signal integrity across voltage and temperature variations in high-speed mobile memory subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4 SDRAM – Low-power double-data-rate synchronous DRAM compliant with JESD209-4B. |
| Capacity | 2Gb (256Mb × 8 I/O × 2 channels) – Supports dual-channel 16-bit interface for bandwidth-critical mobile SoCs. |
| Data Rate | 4266 Mbps per pin – Enables 34.1 GB/s aggregate bandwidth in x16 configuration at 2133 MHz clock. |
| Supply Voltage | VDD/VDDQ = 1.1V ±0.07V – Matches LPDDR4 system-level power rails; VREFDQ and VREFCA internally generated and trainable. |
| Package | WFBGA-200, 10 mm × 12 mm × 0.65 mm – Standard footprint for mobile PCB stacking; ball pitch 0.65 mm. |
| Operating Temp | –25°C to +85°C (Case) – Qualified for consumer and industrial mobile applications with thermal sensor feedback. |
| Refresh Mode | Auto-refresh, self-refresh, and Target Row Refresh (TRR) – Reduces row hammer vulnerability and extends retention in low-power states. |
Pinout & Package
W66BL6NBUAHJ TR uses a 200-ball WFBGA package with 0.65 mm ball pitch, 10 mm × 12 mm body size, and standard LPDDR4 ball assignment for single-die-package (SDP) configuration. Ball map follows JEDEC-defined CA/DQ/DQS/CK/CK# layout optimized for signal integrity and routing density.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Power Supply | Separate 1.1V supplies for core logic (VDD) and I/O (VDDQ); decoupling required per JEDEC LPDDR4 layout guidelines. |
| CK, CK# | Differential Clock Input | LVDS-compatible differential clock pair; defines timing reference for all commands and data transfers. |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe for read/write data capture; supports WDQS control modes and DQS-DQ training. |
| CA[0:5] | Command/Address Bus | 6-bit multiplexed bus for mode register access, bank/row/column addressing, and command encoding (ACT, PRE, REF, etc.). |
| DQ[0:15] | Data I/O | 16-bit bidirectional data bus with on-die termination (ODT) configurable per rank; supports BL16/BL32 bursts. |
| RESET#, CKE | Control Signals | Asynchronous reset and clock enable; CKE gating controls power-down and self-refresh entry/exit. |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC LPDDR4-4266 Compliance | Fully conforms to JESD209-4B spec including tDQSCK, tRPRE, tWPST, and masked write timing constraints for BL16 operation. |
| On-Die Termination (ODT) | Configurable ODT for DQ/DQS/DMI and CA bus; reduces external termination components and improves signal fidelity at 2133 MHz. |
| VREF Training | Independent CA VREF and DQ VREF training via MRR/MRW; compensates for process/voltage/temperature drift in high-speed receivers. |
| Thermal Offset Compensation | Integrated temperature sensor feeds thermal offset correction into timing parameters (e.g., tRCD, tRP), maintaining timing margin over –25°C to +85°C. |
| Target Row Refresh (TRR) | Hardware-accelerated TRR mode mitigates row hammer effects without host software intervention; meets JEDEC reliability requirements. |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: High-bandwidth memory subsystem for Qualcomm Snapdragon or MediaTek Dimensity SoCs requiring LPDDR4-4266 performance and low standby power. IC Role / Device Role / Timing Role: Primary main memory device interfacing directly with SoC memory controller via dual 16-bit channels; handles ACT/READ/WRITE/PRE/REF commands with sub-15ns tRCD. Use Value: Delivers 34.1 GB/s peak bandwidth while maintaining 1.1V operation and self-refresh current < 50 µA at 25°C - critical for battery life in premium smartphones. | Use Scenario: Dual-rank LPDDR4 memory solution for Android tablets with display resolution ≥2K and multi-tasking OS demands. IC Role / Device Role / Timing Role: Second-rank memory component in DDP configuration; shares same WFBGA-200 footprint and ballout as primary rank for compact board layout. Use Value: Enables 4Gb total capacity using two W66BL6NBUAHJ TR devices in DDP topology without redesigning PCB stack-up or signal routing. |
| Automotive Infotainment System RAM | Industrial Edge AI Module Memory |
Use Scenario: Memory for QNX- or Android Automotive-based head units requiring AEC-Q200-aligned reliability and extended temperature operation. IC Role / Device Role / Timing Role: Non-volatile-cached DRAM buffer for GPU and DSP co-processors; supports TRR and thermal sensor reporting via MR39/MR40. Use Value: Validated for –25°C to +85°C case temperature with built-in thermal offset correction - eliminates need for external temperature compensation logic. | Use Scenario: On-device inference accelerator memory in fanless edge gateways running TensorFlow Lite or ONNX models. IC Role / Device Role / Timing Role: Low-latency, high-throughput memory for CNN weight loading and feature map buffering; leverages ZQ calibration and DQS-DQ training for stable 4266 Mbps operation under variable thermal load. Use Value: Maintains timing closure across 0–85°C ambient via real-time VREF and ODT adjustment - ensures deterministic inference latency in uncontrolled environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M32D2DS-053 WT:A | 2Gb LPDDR4, 4266 Mbps, 200-ball WFBGA, but requires separate VREF supply and lacks integrated thermal sensor. | No TRR support; relies on host-initiated refresh management; less suitable for automotive safety-critical contexts. | Prefer W66BL6NBUAHJ TR when thermal-aware refresh and autonomous TRR are required. |
| K4E6E304EC-EGCF | 2Gb LPDDR4, 4266 Mbps, 200-ball WFBGA, includes CA/DQ VREF training but no thermal offset register (MR39/MR40). | Supports standard LPDDR4 training but lacks temperature-compensated timing parameters - may require wider timing margins. | Choose W66BL6NBUAHJ TR for designs needing dynamic tRCD/tRP adjustment across temperature. |
Compared with MT53E256M32D2DS-053 WT:A and K4E6E304EC-EGCF, the W66BL6NBUAHJ TR uniquely integrates thermal offset compensation and JEDEC TRR hardware acceleration - enabling tighter timing margins and reduced host firmware complexity in thermally variable mobile and automotive systems.
Availability
W66BL6NBUAHJ TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment system RAM requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR4-4266 performance.
Supply support for W66BL6NBUAHJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, DDR SDRAM, and LPDDR products for mobile, automotive, and industrial markets.
The W66BL6NBUAHJ TR belongs to Winbond's LPDDR4 product line designed specifically for power-constrained, high-bandwidth mobile platforms requiring JEDEC-compliant low-voltage memory with advanced signal integrity and thermal management features.
FAQ
What is the maximum data rate supported by the W66BL6NBUAHJ TR?
The W66BL6NBUAHJ TR supports a maximum data rate of 4266 Mbps per pin, corresponding to a 2133 MHz differential clock frequency. This is validated under JEDEC LPDDR4-4266 conditions with tDQSCK ≤ ±25 ps and full VREF training enabled. The device achieves this rate using its 16-bit dual-channel interface and on-die termination calibrated via ZQ and DQ VREF training sequences.
Does the W66BL6NBUAHJ TR support dual-die-package (DDP) configuration?
Yes, the W66BL6NBUAHJ TR is specified for both single-die-package (SDP) and dual-die-package (DDP) configurations per the W66BL6NB datasheet. In DDP mode, two 2Gb dies share the same WFBGA-200 ballout and operate as independent ranks, enabling 4Gb total capacity without changing PCB layout or signal routing.
How does thermal offset compensation work in the W66BL6NBUAHJ TR?
The W66BL6NBUAHJ TR includes an integrated temperature sensor and thermal offset registers (MR39/MR40) that dynamically adjust internal timing parameters like tRCD and tRP based on real-time die temperature. This compensation maintains timing margin across –25°C to +85°C case temperature without requiring host-side recalibration or conservative worst-case timing design.
Is VREF supply required externally for the W66BL6NBUAHJ TR?
No, the W66BL6NBUAHJ TR generates internal VREFDQ and VREFCA references and supports full training via MRR/MRW commands. External VREF is not required, simplifying power delivery design. The device performs CA VREF and DQ VREF training during initialization to align receiver thresholds with actual signaling conditions.
What LPDDR4-specific training sequences does the W66BL6NBUAHJ TR support?
The W66BL6NBUAHJ TR supports command bus training, RD DQ calibration, DQS-DQ training, READ preamble training, and WDQS control mode calibration - all defined in JEDEC JESD209-4B. These sequences are executed via MPC and MRW commands and are essential for achieving stable 4266 Mbps operation across voltage and temperature corners.
W66BL6NBUAHJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BL6NBUAHJ TR FAQ
1.How can I place an order for W66BL6NBUAHJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BL6NBUAHJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BL6NBUAHJ TR reliable?
The price and inventory of W66BL6NBUAHJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BL6NBUAHJ TR is usually 5 days.
3.What payment methods are accepted for W66BL6NBUAHJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BL6NBUAHJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BL6NBUAHJ TR?
W66BL6NBUAHJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BL6NBUAHJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BL6NBUAHJ TR?
For technical support, including W66BL6NBUAHJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BL6NBUAHJ TR requirements.
6.How does Aetrix verify that W66BL6NBUAHJ TR is sourced from the original manufacturer or authorized distributors?
All W66BL6NBUAHJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BL6NBUAHJ TR meets industry standards.
7.What is the process for return or replacement of W66BL6NBUAHJ TR?
All W66BL6NBUAHJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66BL6NBUAHJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BL6NBUAHJ TR part is unused and in its original packaging.
Return procedure for W66BL6NBUAHJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BL6NBUAHJ TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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