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Winbond Electronics Corporation W66BM6NBUAFJ TR
- Part No.:
- W66BM6NBUAFJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BM6NBUAFJ TR.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,720
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Product details
Overview
W66BM6NBUAFJ TR from Winbond is a 2Gb LPDDR4X SDRAM in 200-ball WFBGA package, operating at 4266 Mbps data rate with 1.1 V I/O and 0.6 V core supply, supporting dual-channel 16-bit x2 interface for mobile application processors in smartphones and tablets.
For engineers reviewing the W66BM6NBUAFJ TR datasheet, W66BM6NBUAFJ TR pinout, W66BM6NBUAFJ TR application, or W66BM6NBUAFJ TR equivalent, key selection criteria include LPDDR4X compliance, 200-ball WFBGA footprint, 4266 Mbps per pin, VREFDQ/CA training support, and dual-die-package (DDP) compatibility for memory expansion.
Technical Context
The W66BM6NBUAFJ TR implements LPDDR4X JEDEC JESD209-4B-compliant signaling with differential CK/CK#, single-ended CA bus, and 16-bit DQ/DQS/DM per channel. It supports on-die termination (ODT) for both command/address and DQ buses, programmable MR registers (MR0–MR40), and advanced calibration including DQS-DQ training, RD DQ calibration, and ZQ calibration.
It features dual-rank operation, auto-precharge, per-bank refresh, self-refresh with temperature-compensated refresh (TRR), and Post Package Repair (PPR) for fail-row redundancy. The device uses 8 banks with 4K rows per bank and supports burst lengths of BL16 and BL32 with read/write latencies configurable via mode registers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4X SDRAM - low-power double-data-rate interface with VDDQ=1.1 V and VDD=0.6 V for battery-constrained mobile SoC designs. |
| Capacity | 2 Gb (256 M x 8) - organized as two 128 M x 8 banks per channel, enabling 16-bit x2 dual-channel configuration. |
| Data Rate | 4266 Mbps per pin - supports high-bandwidth graphics and AI acceleration in application processors without increasing pin count. |
| Package | 200-ball WFBGA, 10 mm × 12 mm × 0.65 mm - compatible with standard LPDDR4X PCB stackups and reflow profiles. |
| Operating Temp | -25°C to +85°C - qualified for commercial and extended-temperature mobile and embedded applications. |
| JEDEC Standard | JESD209-4B compliant - ensures interoperability with LPDDR4X controllers from Qualcomm, MediaTek, and Samsung Exynos. |
| VREF Support | Separate VREFDQ and VREFCA - enables independent input threshold calibration for signal integrity across voltage and temperature corners. |
Pinout & Package
W66BM6NBUAFJ TR is housed in a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.65 mm ball pitch, 10 mm × 12 mm body size, and standard LPDDR4X ball assignment per Section 4.1 of the datasheet (Single-Die-Package layout).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | Primary timing reference for all command, address, and data transfers; requires matched trace length and controlled impedance (100 Ω diff). |
| CA[0:5] | Command/address bus | Single-ended 6-bit bus carrying commands (ACT, PRE, REF), addresses, and mode register writes; terminated with ODT_CA. |
| DQ[0:15] | Data I/O bus (x2 channels) | 16-bit bidirectional data path per channel; supports BL16/BL32 reads/writes with DQS strobe alignment. |
| DQS_t / DQS_c | Differential data strobe | Source-synchronous strobe for DQ capture; used in write leveling and DQS-DQ training for timing margin optimization. |
| RESET_n | Asynchronous reset input | Active-low hardware reset that initializes internal state machines and clears mode registers; must be held low ≥ 200 ns after power stabilization. |
| VREFDQ / VREFCA | Reference voltage inputs | Provides mid-point thresholds for DQ and CA receivers; each requires dedicated 0.5×VDDQ/0.5×VDDCA decoupling and low-noise routing. |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4X JEDEC JESD209-4B compliance | Ensures drop-in compatibility with industry-standard LPDDR4X memory controllers and validation toolchains. |
| Dual-rank, dual-channel 16-bit interface | Enables 32-bit effective data bus width without doubling package ball count-critical for space-constrained mobile PCBs. |
| On-die termination (ODT) for CA and DQ buses | Eliminates external termination resistors, reducing BOM cost and PCB area while improving signal integrity at 4266 Mbps. |
| VREFDQ/VREFCA independent calibration | Allows dynamic adjustment of input thresholds per rail, maintaining timing margins across voltage droop and temperature drift. |
| Post Package Repair (PPR) | Supports field-programmable row-level redundancy to improve yield and lifetime reliability without requiring wafer-level repair infrastructure. |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: High-performance mobile SoC (e.g., MediaTek Dimensity or Qualcomm Snapdragon) requiring low-power, high-bandwidth main memory for UI rendering and camera ISP buffering. IC Role / Device Role / Timing Role: Primary LPDDR4X DRAM providing 32 GB/s peak bandwidth to CPU/GPU/NPU subsystems via dual 16-bit channels. Use Value: Enables 4266 Mbps operation at 1.1 V I/O, reducing dynamic power by ~25% versus LPDDR4 at same data rate while maintaining full JEDEC compatibility. | Use Scenario: Mid-tier Android tablet platform integrating integrated graphics and multi-tasking OS with sustained memory bandwidth demand. IC Role / Device Role / Timing Role: Dual-rank LPDDR4X memory supporting simultaneous GPU texture fetches and application memory paging. Use Value: Delivers 2 Gb density in compact 200-ball WFBGA, allowing thinner PCB stackups and lower interconnect loss than discrete DDR packages. |
| Automotive Infotainment Head Unit | Edge AI Vision Module |
Use Scenario: AEC-Q200-qualified infotainment system running Android Automotive OS with navigation, voice assistant, and video playback. IC Role / Device Role / Timing Role: LPDDR4X memory subsystem supporting real-time display compositing and audio DSP buffers under thermal and voltage variation. Use Value: -25°C to +85°C operating range and TRR-based temperature-adaptive refresh ensure stable operation across vehicle cabin environments. | Use Scenario: Compact vision processing module (e.g., for smart cameras or robotics) performing real-time object detection using CNN inference engines. IC Role / Device Role / Timing Role: Low-latency memory backing neural network weight caches and feature map buffers for edge accelerators. Use Value: DQS-DQ and RD DQ calibration features maintain timing closure at 4266 Mbps even with board-level skew and temperature gradients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M32D2DS-046 | 2Gb LPDDR4X, 4600 Mbps, 200-ball WFBGA, Micron - higher max data rate but tighter tDQSCK and setup/hold requirements. | Requires more aggressive PCB layout and controller tuning for 4600 Mbps; not validated for TRR or PPR in automotive use cases. | Select when maximum bandwidth is prioritized over calibration flexibility and field-repair capability. |
| K4U6E3046E-BCGC | 2Gb LPDDR4X, 4266 Mbps, 200-ball WFBGA, Samsung - identical speed and package, but lacks VREFCA training and MR39/MR40 thermal offset registers. | No independent VREFCA calibration; less robust under voltage droop on command bus; no built-in thermal sensor output register. | Select when cost is primary constraint and thermal-aware refresh or CA bus margining is not required. |
Compared with MT53E256M32D2DS-046 and K4U6E3046E-BCGC, the W66BM6NBUAFJ TR provides unique VREFCA training, TRR-mode refresh, and Post Package Repair-making it preferred for thermally variable or long-lifecycle embedded deployments where field reliability outweighs peak speed.
Availability
W66BM6NBUAFJ TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head units requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR4X sourcing.
Supply support for W66BM6NBUAFJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR Flash, RAM, and trusted firmware storage products for consumer, industrial, and automotive markets.
The W66B series targets mobile and embedded LPDDR4X applications, designed to deliver JEDEC-compliant performance with enhanced calibration, thermal management, and field-repair capabilities beyond baseline LPDDR4X specifications.
FAQ
What is the maximum data rate supported by the W66BM6NBUAFJ TR?
The W66BM6NBUAFJ TR supports a maximum data rate of 4266 Mbps per pin, compliant with JEDEC JESD209-4B LPDDR4X specification. This rate is achievable under specified AC operating conditions including VDDQ = 1.1 V ± 3%, VDD = 0.6 V ± 3%, and ambient temperature between –25°C and +85°C. The W66BM6NBUAFJ TR achieves this speed using differential CK/CK# and DQS/DQS# signaling with calibrated timing margins.
Does the W66BM6NBUAFJ TR support dual-die-package (DDP) configurations?
Yes, the W66BM6NBUAFJ TR is a single-die-package (SDP) variant within the W66BM6NB family, but it shares pinout, timing, and command compatibility with dual-die-package (DDP) counterparts like W66CM2NQ. Both SDP and DDP versions use identical 200-ball WFBGA footprints and support rank-level addressing, enabling seamless migration from 2Gb SDP to 4Gb DDP without PCB redesign.
What calibration features does the W66BM6NBUAFJ TR provide for signal integrity?
The W66BM6NBUAFJ TR includes DQS-DQ training, RD DQ calibration, CA VREF training, DQ VREF training, and ZQ calibration. These features allow the host controller to dynamically adjust strobe-to-data alignment, input threshold voltages, and output driver impedance across process, voltage, and temperature variations-ensuring reliable operation at 4266 Mbps without manual tuning.
Is the W66BM6NBUAFJ TR suitable for automotive applications?
Yes, the W66BM6NBUAFJ TR operates across –25°C to +85°C and supports Temperature-Compensated Refresh (TRR) and thermal offset registers (MR39/MR40), enabling adaptive refresh rates based on die temperature. While not AEC-Q200 certified out-of-box, its electrical and thermal behavior meets foundational requirements for infotainment and ADAS auxiliary memory subsystems when implemented with appropriate system-level qualification.
How does Post Package Repair (PPR) work in the W66BM6NBUAFJ TR?
Post Package Repair (PPR) in the W66BM6NBUAFJ TR allows field-programmable remapping of defective rows to redundant rows using MPC commands during initialization. The W66BM6NBUAFJ TR stores PPR information in non-volatile fuses, enabling permanent repair without requiring wafer-level redundancy or re-binning. This extends usable lifetime and improves yield in high-volume mobile manufacturing.
W66BM6NBUAFJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.6 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BM6NBUAFJ TR FAQ
1.How can I place an order for W66BM6NBUAFJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BM6NBUAFJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BM6NBUAFJ TR reliable?
The price and inventory of W66BM6NBUAFJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BM6NBUAFJ TR is usually 5 days.
3.What payment methods are accepted for W66BM6NBUAFJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BM6NBUAFJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BM6NBUAFJ TR?
W66BM6NBUAFJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BM6NBUAFJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BM6NBUAFJ TR?
For technical support, including W66BM6NBUAFJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BM6NBUAFJ TR requirements.
6.How does Aetrix verify that W66BM6NBUAFJ TR is sourced from the original manufacturer or authorized distributors?
All W66BM6NBUAFJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BM6NBUAFJ TR meets industry standards.
7.What is the process for return or replacement of W66BM6NBUAFJ TR?
All W66BM6NBUAFJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66BM6NBUAFJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BM6NBUAFJ TR part is unused and in its original packaging.
Return procedure for W66BM6NBUAFJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BM6NBUAFJ TR Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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