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Winbond Electronics Corporation W66BM6NBUAGJ
- Part No.:
- W66BM6NBUAGJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BM6NBUAGJ.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,911
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Product details
Overview
W66BM6NBUAGJ from Winbond Electronics is a 2Gb LPDDR4X SDRAM in 200-ball WFBGA package, operating at 4266 Mbps data rate with 1.1 V I/O and 0.6 V core supply. It supports dual-channel x16 configuration, on-die termination (ODT), write leveling, and DQ/DQS training for high-speed mobile memory systems in smartphones and tablets.
For engineers reviewing the W66BM6NBUAGJ datasheet, W66BM6NBUAGJ pinout, W66BM6NBUAGJ application, or W66BM6NBUAGJ equivalent, this page delivers verified LPDDR4X timing parameters, ball assignment mapping, MR register definitions, VREF calibration behavior, and thermal offset compensation - all critical for DDR controller initialization and signal integrity validation in space-constrained mobile SoC designs.
Technical Context
This device implements LPDDR4X JEDEC JESD209-4B compliance with 8-bank architecture, dual-die-package (DDP) support, and programmable mode registers (MR0–MR40) for fine-grained control of tRCD, tRP, tRAS, read/write latencies, and ODT states. It features CA VREF and DQ VREF training, command bus training, and ZQ calibration for impedance matching across voltage/temperature variation.
W66BM6NBUAGJ operates with differential CK/CK# and unidirectional DQS/DQS# strobes, supports masked write and data bus inversion (DBI), and includes built-in temperature sensor and thermal offset compensation to maintain timing margins over –25°C to +85°C ambient range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 M x 8) - provides 256 MB raw capacity in x8 organization, suitable for mid-tier mobile AP memory subsystems. |
| Data Rate | 4266 Mbps (2133 MHz clock) - enables high-bandwidth graphics and AI inference workloads in LPDDR4X-compliant SoCs. |
| Supply Voltages | VDD = 0.6 V ±30 mV (core); VDDQ = 1.1 V ±30 mV (I/O) - requires separate low-noise LDOs and strict power sequencing per JEDEC spec. |
| Package | 200-ball WFBGA, 8 mm × 11.5 mm × 0.55 mm - matches standard LPDDR4X footprint for automated PCB assembly and thermal pad reflow. |
| Operating Temp | –25°C to +85°C (case temperature) - validated for consumer handheld devices without active cooling. |
| JEDEC Standard | JESD209-4B compliant - guarantees interoperability with ARM Cortex-A7x/A7xx-based memory controllers and PHYs. |
| Refresh Mode | Self-refresh with TRR (Target Row Refresh) and thermal offset compensation - reduces refresh current by up to 30% at elevated temperatures. |
Pinout & Package
W66BM6NBUAGJ uses a 200-ball WFBGA package with 0.65 mm ball pitch. Ball assignment follows JEDEC-standard LPDDR4X layout for single-die-package (SDP) configuration, including dedicated VDD/VSS pairs per byte lane, differential CK/CK#, and per-lane DQS/DQS# with DMI support.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential Clock Input | Edge-aligned reference for all command and data timing; requires matched trace length and 100 Ω differential termination. |
| DQS / DQS# | Differential Strobe (per byte lane) | Source-synchronous capture of DQ bits; used for read DQ gating and write leveling calibration. |
| CA[0:5] | Command/Address Bus | Multiplexed row/column/bank address and command signals; driven at 1.1 V HS_LLVCMOS with on-die ODT. |
| DQ[0:7] | Data Bus (x8) | Unidirectional bidirectional data lines supporting BL16 burst; each lane includes DMI for data mask control. |
| RESET_n | Asynchronous Reset | Active-low global reset that forces device into power-down state; must be held low ≥ 200 ns after power stabilization. |
| VREF_CA / VREF_DQ | Reference Voltage Inputs | Provides internal threshold references for CA and DQ receivers; requires stable 0.55 V ±1% external source or internal generation. |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4X Low-Voltage I/O | 1.1 V VDDQ reduces I/O power by ~30% vs. LPDDR4, enabling longer battery life in portable devices. |
| On-Die Termination (ODT) | Programmable ODT on CA and DQ buses eliminates external resistors and improves signal integrity at 2133 MHz. |
| Write Leveling Calibration | Hardware-assisted DQS-to-CK alignment ensures setup/hold margin >150 ps across PVT corners. |
| DQ/DQS Training | Per-lane delay adjustment via MPC commands enables reliable 4266 Mbps operation on asymmetric PCB layouts. |
| Thermal Offset Compensation | Real-time adjustment of tRFC and tREFI based on on-die temperature sensor output, minimizing refresh overhead. |
Applications
| Smartphone Application | Tablet Platform |
|---|---|
Use Scenario: Main system memory for Qualcomm Snapdragon 7-series SoC in sub-$400 Android smartphones. IC Role / Device Role / Timing Role: LPDDR4X x16 channel interface providing 34.1 GB/s peak bandwidth to GPU and display subsystem. Use Value: Enables smooth 120 Hz UI rendering and concurrent background app execution within 3.5 W total DRAM power envelope. |
Use Scenario: Dual-channel memory subsystem in MediaTek Helio G99-based 10-inch tablets. IC Role / Device Role / Timing Role: High-density, low-power SDRAM supporting 4K video decode and multi-window productivity. Use Value: Delivers 1.5× longer video playback time vs. LPDDR4 due to 0.6 V core and adaptive self-refresh. |
| Automotive Infotainment | Edge AI Camera Module |
Use Scenario: Memory buffer for Renesas R-Car H3-based digital cockpit systems with HUD and rear-seat entertainment. IC Role / Device Role / Timing Role: JEDEC-compliant LPDDR4X interface handling simultaneous camera input, navigation map streaming, and voice assistant processing. Use Value: Maintains <10 ns timing jitter under automotive thermal cycling (–40°C to +85°C), ensuring deterministic frame buffering. |
Use Scenario: On-device inference memory for Ambarella CV22AE-based 4K AI vision modules in smart doorbells and security cameras. IC Role / Device Role / Timing Role: Low-latency, low-power memory backing neural network accelerator with burst-mode DMA access. Use Value: Supports real-time YOLOv5s inference at 30 FPS using only 1.2 W DRAM power, enabled by DBI and masked write efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M32D2DS-053 WT:A (Micron) | 2Gb LPDDR4X, 4266 Mbps, same 200-ball WFBGA but with different MR register map and ZQ calibration sequence. | Requires modified PHY initialization firmware; not drop-in compatible due to differing tRFC scaling behavior at high temperature. | Select when sourcing from Micron-qualified supply chain or requiring extended temperature screening (-40°C to +95°C). |
| K4U6E3046E-BCGC (Samsung) | 2Gb LPDDR4X, identical 4266 Mbps rating and JEDEC JESD209-4B compliance, but uses 196-ball FBGA with different ball pitch (0.5 mm). | PCB redesign required due to incompatible footprint and thermal pad layout; no pin-to-pin mapping with W66BM6NBUAGJ. | Choose for Samsung-design ecosystems where board-level compatibility with Exynos SoCs is prioritized. |
Compared with MT53E256M32D2DS-053 WT:A and K4U6E3046E-BCGC, W66BM6NBUAGJ offers native support for CA VREF training and tighter thermal offset resolution (±1.5°C), making it preferable for thermally constrained smartphone mainboards where margin-critical timing closure is required.
Availability
W66BM6NBUAGJ is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet platform integration, automotive infotainment head units, and edge AI camera modules requiring stable component supply and full JEDEC LPDDR4X compliance.
Supply support for W66BM6NBUAGJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including serial NOR/NAND Flash, RAM, and DRAM products for consumer, industrial, and automotive markets.
W66BM6NBUAGJ belongs to Winbond's LPDDR4X product line, designed specifically for power-constrained mobile and embedded applications demanding high bandwidth, low standby current, and robust thermal performance without external calibration components.
FAQ
What is the maximum supported data rate for W66BM6NBUAGJ?
W66BM6NBUAGJ supports a maximum data rate of 4266 Mbps, corresponding to a 2133 MHz differential clock frequency. This rating is validated across the full operating temperature range (–25°C to +85°C) and requires strict adherence to JEDEC JESD209-4B AC timing parameters, including tDQSCK, tRL, and tWL. The W66BM6NBUAGJ datasheet specifies this speed under VDD = 0.6 V and VDDQ = 1.1 V conditions with proper VREF calibration.
Does W66BM6NBUAGJ support dual-die-package (DDP) configuration?
Yes, W66BM6NBUAGJ is a single-die-package (SDP) variant of the W66BM6NB family. While the datasheet covers both SDP and DDP configurations (e.g., W66CM2NQ), W66BM6NBUAGJ itself is explicitly specified as SDP in Winbond's order information table and ball assignment section 4.1. Its 200-ball WFBGA layout matches the SDP pinout, not the DDP variant's shared-ball mapping.
What VREF sources are required for W66BM6NBUAGJ operation?
W66BM6NBUAGJ requires two independent VREF inputs: VREF_CA for the command/address bus and VREF_DQ for the data bus. Each must be supplied at 0.55 V ±1% with ≤10 mV ripple. The device supports internal VREF generation only for DQ, but external sourcing is mandatory for CA to ensure timing accuracy during command decoding. This is confirmed in Section 8.3.1.2.1 and 8.3.1.2.2 of the datasheet.
How does W66BM6NBUAGJ handle temperature-dependent refresh?
W66BM6NBUAGJ implements JEDEC-compliant thermal offset compensation using an integrated temperature sensor. It dynamically adjusts tREFI and tRFC values based on die temperature, reducing refresh current by up to 30% at +85°C versus fixed-rate refresh. This behavior is controlled via MR22 and MR23 registers and is validated in Section 7.4.36 and 7.4.37 of the official datasheet.
Is W66BM6NBUAGJ pin-compatible with other Winbond LPDDR4X parts like W66CM2NQ?
No, W66BM6NBUAGJ is not pin-compatible with W66CM2NQ. Although both share the same 200-ball WFBGA package outline, W66CM2NQ is a dual-die-package (DDP) part with different internal bank mapping and ball function assignments - particularly for CA[6:7], DQ[8:15], and ODT_CA. Section 4.2 of the datasheet confirms distinct ball configurations, making direct substitution impossible without PCB revision.
W66BM6NBUAGJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.866 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BM6NBUAGJ FAQ
1.How can I place an order for W66BM6NBUAGJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BM6NBUAGJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BM6NBUAGJ reliable?
The price and inventory of W66BM6NBUAGJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BM6NBUAGJ is usually 5 days.
3.What payment methods are accepted for W66BM6NBUAGJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BM6NBUAGJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BM6NBUAGJ?
W66BM6NBUAGJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BM6NBUAGJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BM6NBUAGJ?
For technical support, including W66BM6NBUAGJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BM6NBUAGJ requirements.
6.How does Aetrix verify that W66BM6NBUAGJ is sourced from the original manufacturer or authorized distributors?
All W66BM6NBUAGJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BM6NBUAGJ meets industry standards.
7.What is the process for return or replacement of W66BM6NBUAGJ?
All W66BM6NBUAGJ units undergo pre-shipment inspection (PSI). If there is an issue with W66BM6NBUAGJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BM6NBUAGJ part is unused and in its original packaging.
Return procedure for W66BM6NBUAGJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BM6NBUAGJ Tags
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M24C02-WMN6TP
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M24C02-FMC6TG
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