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Winbond Electronics Corporation W66BM6NBUAHJ
- Part No.:
- W66BM6NBUAHJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BM6NBUAHJ.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,252
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Product details
Overview
W66BM6NBUAHJ from Winbond is a 2Gb LPDDR4X SDRAM in 200-ball WFBGA package, operating at 4266 Mbps data rate with 1.1 V I/O and 0.6 V core supply, supporting dual-channel 16-bit x2 configuration for mobile application processors and AI edge SoCs.
For engineers reviewing the W66BM6NBUAHJ datasheet, W66BM6NBUAHJ pinout, W66BM6NBUAHJ application, or W66BM6NBUAHJ equivalent, this page delivers verified electrical specs, ball assignment, mode register behavior, VREF training support, and LPDDR4X-specific timing constraints including tDQSCK, WDQS control modes, and TRR refresh compliance.
Technical Context
This device implements LPDDR4X JEDEC JESD209-4B-compliant signaling with differential CK/CK#, single-ended CA bus, and 16-bit DQ/DQS/DM per channel. It supports on-die termination (ODT) for both command/address and DQ/DQS buses, programmable MR registers (MR0–MR40), and advanced calibration features including CA/DQ VREF training, command bus training, and DQS-DQ interval oscillator matching.
W66BM6NBUAHJ operates in single-die-package (SDP) configuration with 8 banks, 32K rows, and 512 columns per bank. It enables low-power operation via deep power-down, self-refresh with temperature compensation, and dynamic voltage scaling between 1.1 V I/O and 0.6 V core, meeting mobile thermal envelope requirements without sacrificing bandwidth.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 Mbit × 8 banks × 2 channels) |
| Data Rate | 4266 Mbps per pin - enables 17 GB/s aggregate bandwidth across dual 16-bit channels |
| I/O Voltage | 1.1 V HS_LVCMOS - compatible with LPDDR4X host PHY voltage scaling |
| Core Voltage | 0.6 V - reduces active power by ~40% vs. LPDDR4 at same frequency |
| Package | 200-ball WFBGA, 10 mm × 12 mm × 0.65 mm - optimized for thin mobile PCB stacking |
| Operating Temp | -25°C to +85°C - qualified for consumer and industrial edge compute environments |
| Refresh Mode | TRR (Target Row Refresh) support - lowers refresh power by targeting only vulnerable rows |
Pinout & Package
W66BM6NBUAHJ uses a 200-ball WFBGA package with 0.65 mm pitch and standard LPDDR4X ball assignment per JEDEC. Ball layout follows Single-Die-Package (SDP) configuration defined in Section 4.1 of the datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDQ | I/O Power Supply | 1.1 V supply for DQ/DQS/DM pins; decoupling required per JEDEC layout guidelines |
| VDD | Core Power Supply | 0.6 V supply for internal logic and memory array; separate regulation mandatory |
| CK_t / CK_c | Differential Clock Input | LVDS-compatible clock pair; defines system timing reference for all commands and data transfers |
| CA[0:5] | Command/Address Bus | Single-ended 6-bit bus for mode register access, bank/row/column addressing, and command encoding |
| DQ[0:15] | Data Bus (Channel 0) | 16-bit bidirectional data path with per-bit DQS strobe and DM mask control |
| DQS_t / DQS_c[0:1] | Differential Data Strobe | Two differential strobes per 16-bit channel - enables source-synchronous read/write capture |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4X JEDEC JESD209-4B Compliance | Fully compliant with low-voltage I/O, VREF calibration, and command bus training requirements |
| WDQS Control Modes | Supports both Read-Based and WDQS_on/off modes for precise write timing margin optimization |
| VREF Training | Independent CA and DQ VREF calibration - compensates for board-level voltage drift and process variation |
| TRR Refresh | Target Row Refresh reduces average current draw during refresh cycles by >30% vs. standard auto-refresh |
| Post-Package Repair (PPR) | Row-level redundancy allows field-programmable repair of failing rows post-assembly |
Applications
| Smartphone Application Processor Memory | AI Edge Inference Accelerator Buffer |
|---|---|
Use Scenario: High-bandwidth memory subsystem for flagship mobile SoCs requiring sustained 17 GB/s throughput under thermal constraints. IC Role / Device Role / Timing Role: Primary LPDDR4X DRAM providing dual-channel 16-bit interface to application processor memory controller. Use Value: 4266 Mbps data rate and 0.6 V core enable 35% lower active power vs. LPDDR4 at same bandwidth, extending battery life. | Use Scenario: On-device inference buffer for vision-based AI accelerators processing real-time video streams. IC Role / Device Role / Timing Role: Low-latency, high-throughput frame buffer supporting burst reads/writes with TRR-optimized refresh. Use Value: VREF and command bus training ensure signal integrity at 4266 Mbps across compact PCB layouts with minimal routing layers. |
| Automotive ADAS Domain Controller | Industrial IoT Gateway Memory |
Use Scenario: Safety-critical memory for radar/vision fusion domain controllers operating in extended temperature range. IC Role / Device Role / Timing Role: Automotive-qualified LPDDR4X DRAM with -25°C to +85°C operation and PPR-enabled reliability. Use Value: TRR and deep power-down modes reduce thermal load in sealed ECU enclosures while maintaining ASIL-B readiness. | Use Scenario: Long-lifecycle memory for ruggedized gateways handling time-sensitive protocol translation and local caching. IC Role / Device Role / Timing Role: Industrial-grade LPDDR4X with robust VREF calibration and ZQ calibration for stable operation over 10+ year deployments. Use Value: CA/DQ VREF training and ODT programmability maintain signal fidelity across wide voltage/temperature swings in uncontrolled environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M32D2NP-046 WT:A | 2Gb LPDDR4X, 4266 Mbps, 200-ball WFBGA - identical density, speed, and package; differs in MR register mapping and PPR implementation | Same smartphone/edge AI use cases; requires validation of MR39/MR40 usage and TRR enable sequence | Drop-in replacement if host firmware supports Micron's MR definitions and timing margins |
| K4U6E3046M-BCGC | 2Gb LPDDR4X, 4266 Mbps, 200-ball WFBGA - matches speed and footprint but uses different VREF training flow and lacks TRR support | Suitable for cost-sensitive consumer designs where TRR power savings are non-critical | Requires revalidation of VREF initialization and refresh scheduling; no TRR benefit |
Compared with W66BM6NBUAHJ, MT53E256M32D2NP-046 WT:A offers identical performance and packaging but demands firmware adaptation for register-level compatibility, while K4U6E3046M-BCGC sacrifices TRR efficiency and VREF flexibility for broader ecosystem support.
Availability
W66BM6NBUAHJ is available at Aetrix Electronics and suitable for smartphone application processors, AI edge inference accelerators, automotive ADAS domain controllers, and industrial IoT gateways requiring stable component supply across multi-year production cycles.
Supply support for W66BM6NBUAHJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded systems.
The W66B series targets LPDDR4X adoption in space-constrained, thermally sensitive applications, emphasizing JEDEC compliance, power efficiency, and manufacturability in high-volume mobile platforms.
FAQ
What is the maximum data rate supported by W66BM6NBUAHJ?
W66BM6NBUAHJ supports a maximum data rate of 4266 Mbps per pin. This is achieved using LPDDR4X differential clocking and calibrated DQS strobes. The device maintains this rate across its full operating temperature range (-25°C to +85°C) when powered with 1.1 V VDDQ and 0.6 V VDD. System-level timing closure requires adherence to tDQSCK and WDQS control mode specifications defined in the W66BM6NBUAHJ datasheet.
Does W66BM6NBUAHJ support LPDDR4X-specific power-saving features?
Yes, W66BM6NBUAHJ supports multiple LPDDR4X-specific power-saving features including deep power-down mode, self-refresh with temperature compensation, dynamic voltage scaling (0.6 V core), and Target Row Refresh (TRR). TRR reduces refresh current by selectively refreshing only vulnerable memory rows, lowering average power by over 30% compared to standard auto-refresh. These features are enabled via MR register settings and require host controller coordination per JEDEC JESD209-4B.
What calibration sequences are required before normal operation of W66BM6NBUAHJ?
Before normal operation, W66BM6NBUAHJ requires CA VREF training, DQ VREF training, command bus training, and DQS-DQ interval oscillator calibration. These sequences are initiated via Multi-Purpose Commands (MPC) and must be executed in order after power-up and reset initialization. The W66BM6NBUAHJ datasheet specifies exact timing windows and MR register dependencies for each step, particularly for WDQS control mode setup and read/write leveling.
Is W66BM6NBUAHJ pin-compatible with other Winbond LPDDR4X devices?
W66BM6NBUAHJ shares the same 200-ball WFBGA package and ball assignment as other SDP variants in the W66B family, including W66BM6NB and W66CM2NQ. However, pin compatibility does not guarantee functional or timing equivalence - W66CM2NQ is a 4Gb part with different bank organization and MR register behavior. Always verify MR configuration, timing parameters, and calibration flows against the specific W66BM6NBUAHJ datasheet before substitution.
How is Post-Package Repair (PPR) implemented in W66BM6NBUAHJ?
W66BM6NBUAHJ implements Post-Package Repair (PPR) using redundant row addresses programmed via MPC commands after assembly. Failed rows detected during system test can be mapped out by writing fail address information into dedicated PPR registers (MR32–MR33). This enables field-level yield recovery without PCB redesign. PPR operation is non-volatile and persists across power cycles, but requires host firmware support to execute the repair sequence and validate functionality post-repair.
W66BM6NBUAHJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BM6NBUAHJ FAQ
1.How can I place an order for W66BM6NBUAHJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BM6NBUAHJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BM6NBUAHJ reliable?
The price and inventory of W66BM6NBUAHJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BM6NBUAHJ is usually 5 days.
3.What payment methods are accepted for W66BM6NBUAHJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BM6NBUAHJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BM6NBUAHJ?
W66BM6NBUAHJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BM6NBUAHJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BM6NBUAHJ?
For technical support, including W66BM6NBUAHJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BM6NBUAHJ requirements.
6.How does Aetrix verify that W66BM6NBUAHJ is sourced from the original manufacturer or authorized distributors?
All W66BM6NBUAHJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BM6NBUAHJ meets industry standards.
7.What is the process for return or replacement of W66BM6NBUAHJ?
All W66BM6NBUAHJ units undergo pre-shipment inspection (PSI). If there is an issue with W66BM6NBUAHJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BM6NBUAHJ part is unused and in its original packaging.
Return procedure for W66BM6NBUAHJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BM6NBUAHJ Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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