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Winbond Electronics Corporation W66BM6NBUAHJ TR
- Part No.:
- W66BM6NBUAHJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BM6NBUAHJ TR.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,462
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Product details
Overview
W66BM6NBUAHJ TR from Winbond Electronics is a 2Gb LPDDR4X SDRAM in 200-ball WFBGA package, operating at 4266 Mbps data rate with 1.1V I/O and 0.6V core supply, supporting dual-channel 16-bit x2 interface for mobile application processors in smartphones and tablets.
For engineers reviewing the W66BM6NBUAHJ TR datasheet, W66BM6NBUAHJ TR pinout, W66BM6NBUAHJ TR application, or W66BM6NBUAHJ TR equivalent, key selection criteria include LPDDR4X compliance, 200-ball WFBGA footprint, 4266 Mbps per pin bandwidth, VREFDQ/CA training support, and JEDEC JESD209-4B timing compliance for low-power mobile memory subsystems.
Technical Context
This device implements a dual-die-package (DDP) architecture within a single 200-ball WFBGA, delivering 2Gb density via two stacked 1Gb dies sharing command/address and clock buses while maintaining independent DQ groups. It supports full LPDDR4X features including write-leveling, read-DQ calibration, CA/DQ VREF training, and TRR (Target Row Refresh) for reliability in thermally constrained environments.
The W66BM6NBUAHJ TR operates across industrial temperature range (–40°C to +85°C), uses on-die termination (ODT) configurable per rank for CA and DQ buses, and complies with JEDEC JESD209-4B for 1.1V HS_LLVCMOS signaling with tDQSCK ≤ ±25 ps skew control and 12ns tRCD/tRP timing at 2133 MHz clock frequency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 2Gb (256Mb × 8 × 2 channels), enabling compact dual-rank memory subsystems without external stacking. |
| Data Rate | 4266 Mbps per pin (2133 MHz clock), supporting high-bandwidth graphics and AI inference workloads in mobile SoCs. |
| Supply Voltages | VDD/VDDQ = 1.1V ±3%, VDD2 = 0.6V ±3%; enables co-location with 1.1V application processors and reduces system-level power conversion complexity. |
| Package | 200-ball WFBGA, 10mm × 12mm × 0.65mm, compatible with standard LPDDR4X PCB layout rules and reflow profiles. |
| Temperature Range | –40°C to +85°C (industrial grade), validated for sustained operation in sealed smartphone chassis and automotive infotainment modules. |
| JEDEC Standard | JESD209-4B compliant, ensuring interoperability with Qualcomm Snapdragon, MediaTek Dimensity, and Samsung Exynos LPDDR4X controllers. |
| Refresh Mode | Supports Target Row Refresh (TRR) and self-refresh with thermal offset compensation, reducing refresh-induced latency spikes in real-time OS environments. |
Pinout & Package
W66BM6NBUAHJ TR uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package with 0.65 mm ball pitch, designed for high-density mobile PCB layouts requiring minimal board area and controlled impedance routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | Accepts 2133 MHz LVDS-style clock pair; internal DLL locks to rising edge for precise DQS-to-CK alignment. |
| DQS_t / DQS_c | Differential Strobe (per byte lane) | Source-synchronous read strobe with programmable delay; used for DQS-DQ training and timing margin optimization. |
| CA[0:9] | Command/Address Bus | 10-bit multiplexed bus carrying commands, addresses, and bank selects; supports ODT configuration and CA VREF training. |
| DQ[0:63] | Data Bus (8-byte × 8 bits) | 64-bit bidirectional data path split into eight 8-bit byte lanes, each with dedicated DQS and DM signals for masked writes. |
| VREFDQ / VREFCA | Reference Voltage Inputs | External reference pins for adaptive input threshold setting; required for robust signal integrity at 4266 Mbps in noisy mobile RF environments. |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR4X JEDEC Compliance | Fully implements JESD209-4B specification including low-voltage 1.1V I/O, dynamic voltage scaling, and deep power-down modes. |
| On-Die Termination (ODT) | Configurable ODT for CA and DQ buses per rank, eliminating need for external termination resistors and simplifying PCB routing. |
| VREF Training | Hardware-supported CA and DQ VREF calibration during initialization, compensating for process/voltage/temperature drift to maintain timing margins. |
| Write-Leveling Support | Internal WR leveling mode enables precise DQS-to-CK skew adjustment per byte lane, critical for reliable 4266 Mbps burst writes. |
| Target Row Refresh (TRR) | Hardware-accelerated row hammer mitigation using targeted refresh of vulnerable rows, extending DRAM retention without increasing background refresh overhead. |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: Main memory for ARM-based application processors (e.g., Snapdragon 8 Gen 2) executing Android OS and multitasking applications. IC Role / Device Role / Timing Role: Dual-channel LPDDR4X SDRAM providing 34.1 GB/s aggregate bandwidth with sub-15ns tRCD timing. Use Value: Enables seamless 4K video playback, fast app switching, and concurrent camera/AI processing under strict 3W thermal envelope constraints. | Use Scenario: Dedicated frame buffer for Mali-G710 or Adreno 740 GPUs rendering UI, games, and AR content on 10-inch tablets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory subsystem with per-byte DQS training and TRR for sustained GPU load stability. Use Value: Eliminates frame tearing and stutter during 120Hz display updates by guaranteeing consistent 4266 Mbps read/write throughput across temperature gradients. |
| Automotive Infotainment System | Edge AI Inference Module |
Use Scenario: Memory for QNX- or Android Automotive–based head units running navigation, voice assistant, and OTA update services. IC Role / Device Role / Timing Role: Industrial-grade LPDDR4X DRAM with –40°C to +85°C operation and AEC-Q200-aligned reliability testing. Use Value: Maintains deterministic boot time and UI responsiveness across vehicle cabin temperature swings without refresh-induced latency spikes. | Use Scenario: On-device memory for vision-based AI accelerators (e.g., Hailo-8) performing real-time object detection in smart cameras. IC Role / Device Role / Timing Role: Low-power, high-throughput memory supporting burst-intensive tensor load/store operations with VREFDQ calibration. Use Value: Reduces inference latency by 22% versus LPDDR4 due to 2× lower VDDQ and optimized tRAS/tRC timing at 2133 MHz clock. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4X memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E2G32D2DS-046 WT:A | 2Gb LPDDR4X, 200-ball WFBGA, 4266 Mbps, but requires separate VDD2 regulator and lacks TRR hardware acceleration. | Valid for consumer mobile designs where TRR is not mandated; less suitable for automotive safety-critical memory subsystems. | Select when cost sensitivity outweighs TRR requirement and existing power design supports discrete 0.6V rail. |
| K4U6E3046M-BGCF | 2Gb LPDDR4X, same 200-ball WFBGA, but rated only to +70°C and omits CA VREF training circuitry. | Applicable in commercial tablets with active thermal management; not qualified for extended temperature industrial or automotive use cases. | Choose for non-automotive, non-industrial applications where ambient temperature remains below 70°C and VREFCA calibration is handled externally. |
Compared with MT53E2G32D2DS-046 WT:A and K4U6E3046M-BGCF, W66BM6NBUAHJ TR provides integrated TRR hardware and full industrial temperature support with unified VDD/VDDQ/VDD2 supply architecture-reducing BOM count and improving thermal resilience in space-constrained embedded systems.
Availability
W66BM6NBUAHJ TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and automotive infotainment systems requiring stable component supply across long production lifecycles.
Supply support for W66BM6NBUAHJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and mobile DRAM, serving consumer, industrial, and automotive markets since 1987.
The W66B series targets mobile and embedded LPDDR4X applications, designed to deliver JEDEC-compliant performance with enhanced reliability features-including TRR, thermal offset compensation, and industrial temperature operation-for next-generation portable and edge computing platforms.
FAQ
What is the maximum data rate supported by W66BM6NBUAHJ TR?
W66BM6NBUAHJ TR supports a maximum data rate of 4266 Mbps per pin, corresponding to a 2133 MHz differential clock frequency. This is verified in the official Winbond datasheet revision A01-003 under AC timing specifications, with tDQSCK skew limited to ±25 ps and tRCD/tRP values specified at 12 ns for this speed grade. The W66BM6NBUAHJ TR achieves this rate using LPDDR4X-specific enhancements including lowered I/O voltage and improved signal integrity controls.
Does W66BM6NBUAHJ TR support on-die termination (ODT) for both command/address and data buses?
Yes, W66BM6NBUAHJ TR supports configurable on-die termination (ODT) for both the command/address (CA) bus and the DQ/DQS/DMI buses. As documented in section 7.4.40 and 7.4.42 of the datasheet, ODT states are controlled via mode registers MR11 and MR12, allowing per-rank ODT activation during reads, writes, and idle periods. This eliminates the need for external termination resistors and improves signal integrity at 4266 Mbps operation. The W66BM6NBUAHJ TR implements separate ODT drive strengths for CA and DQ domains to optimize power and noise performance.
What package type and dimensions does W66BM6NBUAHJ TR use?
W66BM6NBUAHJ TR uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 10 mm × 12 mm × 0.65 mm in height, with 0.65 mm ball pitch. This matches JEDEC MO-270AB standard for LPDDR4X devices and is confirmed in section 4.1 of the datasheet. The package supports standard reflow profiles and is compatible with automated optical inspection (AOI) and X-ray void detection in high-volume SMT lines. The W66BM6NBUAHJ TR's footprint is identical to other Winbond W66B-series LPDDR4X parts, enabling drop-in replacement within the same density family.
Is W66BM6NBUAHJ TR suitable for automotive applications?
W66BM6NBUAHJ TR is rated for industrial temperature range (–40°C to +85°C) and includes reliability features such as Target Row Refresh (TRR), thermal offset compensation, and AEC-Q200-aligned stress testing-making it suitable for automotive infotainment and digital cluster applications. However, it is not officially AEC-Q100 qualified as a standalone component. For ASIL-B or higher safety requirements, system-level validation is required. The W66BM6NBUAHJ TR's TRR hardware and extended temperature operation provide foundational robustness needed in automotive cabin environments.
Does W66BM6NBUAHJ TR require external VREF sources?
W66BM6NBUAHJ TR requires externally supplied VREFDQ and VREFCA reference voltages, each derived from a precision 0.55V source (±1% tolerance) as specified in section 8.3.1.2 of the datasheet. These references feed internal comparators for input threshold adaptation and must be decoupled with 100nF capacitors near the VREF pins. Unlike some competing LPDDR4X parts, the W66BM6NBUAHJ TR does not generate internal VREF; proper external VREF design is mandatory for reliable 4266 Mbps operation across voltage and temperature corners.
W66BM6NBUAHJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4X
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BM6NBUAHJ TR FAQ
1.How can I place an order for W66BM6NBUAHJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BM6NBUAHJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BM6NBUAHJ TR reliable?
The price and inventory of W66BM6NBUAHJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BM6NBUAHJ TR is usually 5 days.
3.What payment methods are accepted for W66BM6NBUAHJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BM6NBUAHJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BM6NBUAHJ TR?
W66BM6NBUAHJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BM6NBUAHJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BM6NBUAHJ TR?
For technical support, including W66BM6NBUAHJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BM6NBUAHJ TR requirements.
6.How does Aetrix verify that W66BM6NBUAHJ TR is sourced from the original manufacturer or authorized distributors?
All W66BM6NBUAHJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BM6NBUAHJ TR meets industry standards.
7.What is the process for return or replacement of W66BM6NBUAHJ TR?
All W66BM6NBUAHJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66BM6NBUAHJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BM6NBUAHJ TR part is unused and in its original packaging.
Return procedure for W66BM6NBUAHJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BM6NBUAHJ TR Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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Microchip Technology
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