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Winbond Electronics Corporation W66BP6NBUAGJ
- Part No.:
- W66BP6NBUAGJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BP6NBUAGJ.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,755
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Product details
Overview
W66BP6NBUAGJ from Winbond Electronics is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/interface voltage with data rates up to 4266 Mbps (2133 MHz clock), supporting 16-bit x2-channel architecture and JEDEC-compliant low-power mobile memory applications in smartphones and tablets.
For engineers reviewing the W66BP6NBUAGJ datasheet, W66BP6NBUAGJ pinout, W66BP6NBUAGJ application, or W66BP6NBUAGJ equivalent, key selection factors include its dual-die-package-compatible ball assignment, MR register programmability for timing calibration (e.g., MR1–MR4 for drive strength and ODT), and support for CA/DQ training sequences required for high-speed signal integrity in compact mobile PCB layouts.
Technical Context
This device implements JEDEC LPDDR4 standard JESD209-4B with dual-channel 16-bit bus width, on-die termination (ODT) configurable per command/address and DQ/DQS buses, and multi-purpose command (MPC) support for ZQ calibration, read/write leveling, and thermal offset compensation.
It features programmable mode registers (MR0–MR40) governing tRCD/tRP/tRAS timing, burst length (BL16/BL32), partial array self-refresh (PASR), and frequency set point updates - all essential for dynamic power management and signal integrity tuning in battery-constrained SoC platforms.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 Mbit × 8 banks × 2 channels) |
| Data Rate | 4266 Mbps (2133 MHz differential clock) |
| Supply Voltage | 1.1 V core/VDDQ, compliant with LPDDR4 HS_LLVCMOS I/O standard |
| Burst Length | Configurable BL16 or BL32 for optimized bandwidth vs. latency trade-off |
| Operating Temperature | –25°C to +85°C (commercial grade), validated for mobile thermal profiles |
| Package | WFBGA-200 (8 mm × 11.5 mm × 0.65 mm), 0.5 mm ball pitch |
| Refresh Mode | Supports auto-refresh, self-refresh, and partial array self-refresh (PASR) to reduce active power |
Pinout & Package
W66BP6NBUAGJ uses a 200-ball WFBGA package with 0.5 mm pitch, designed for high-density mobile PCBs requiring fine-pitch BGA routing and controlled impedance trace design. Ball assignment follows JEDEC LPDDR4 layout conventions with dedicated VSS/VDD pairs, differential CK_t/CK_c, DQS_t/DQS_c groups, and CA bus with on-die termination enable.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD/VDDQ | Power supply | Dual 1.1 V supplies: VDD for core logic, VDDQ for I/O; decoupling critical for noise suppression at 2133 MHz |
| CK_t / CK_c | Differential clock input | Single-ended clock input referenced to VSS; differential pair enables jitter-tolerant timing recovery |
| DQS_t / DQS_c | Differential strobe | Source-synchronous strobe for DQ read/write capture; supports WDQS control modes for write masking |
| CA[0:10] | Command/Address bus | 11-bit multiplexed bus for mode register access, bank/row/column addressing, and command encoding |
| DQ[0:15] | Data bus (x16) | 16-bit bidirectional data path per channel; supports BL16/BL32 bursts with DM and DBI functions |
| RESET_n | Asynchronous reset | Active-low initialization signal; must be held stable during power ramp per JEDEC LPDDR4 power-up sequence |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Programmable ODT for CA and DQ/DQS buses reduces external termination components and improves signal integrity at 4266 Mbps |
| CA/DQ Training Support | Hardware-accelerated training sequences (MPC commands) for CA VREF, DQ VREF, RD DQ calibration, and DQS-DQ alignment |
| Partial Array Self-Refresh (PASR) | Configurable refresh of 1/2/4/8 banks only, reducing self-refresh current by up to 75% vs. full-array refresh |
| Write Leveling Mode | MRW-based write leveling procedure synchronizes DQS-to-CK skew across all DQ lanes for reliable write capture |
| Thermal Offset Compensation | Integrated temperature sensor feeds thermal offset correction into timing parameters (e.g., tRCD, tRP) to maintain margin over temperature |
Applications
| Smartphone Application | Tablet Platform |
|---|---|
|
Use Scenario: Main system memory in mid-tier Android smartphones with octa-core application processors and 4K display support. IC Role / Device Role / Timing Role: Dual-channel LPDDR4 interface providing 34.1 GB/s peak bandwidth to SoC memory controller with sub-15 ns tRCD timing. Use Value: Enables smooth multitasking and GPU-intensive UI rendering while maintaining <250 mW typical active power at 2133 MHz. |
Use Scenario: Primary memory in 10-inch Android tablets targeting 12-hour video playback and background app persistence. IC Role / Device Role / Timing Role: Low-voltage DRAM supporting deep power-down and PASR to extend battery life without compromising wake-from-sleep latency. Use Value: Reduces self-refresh current to 25 µA per bank via PASR configuration, cutting standby power by 60% vs. legacy LPDDR3. |
| Automotive Infotainment | Mobile Hotspot Gateway |
|
Use Scenario: Memory subsystem in AEC-Q200 qualified infotainment head units with real-time navigation and voice assistant processing. IC Role / Device Role / Timing Role: JEDEC-compliant LPDDR4 buffer for application processor and GPU, supporting ECC-capable memory controller interfaces. Use Value: Validated operation from –25°C to +85°C with thermal offset compensation ensures timing margin stability across vehicle cabin temperature swings. |
Use Scenario: High-throughput memory for 5G mobile hotspot gateways handling concurrent Wi-Fi 6, Bluetooth LE, and LTE/5G modem traffic. IC Role / Device Role / Timing Role: Dual-channel memory enabling simultaneous packet buffering, encryption/decryption, and firmware update staging. Use Value: BL32 burst mode increases effective throughput for large packet transfers, reducing CPU wait states by 35% vs. BL16 in TCP/IP stack operations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M32D2DS-046 | 4 Gb density, 4600 Mbps data rate, 200-ball WFBGA but different ball map (JEDEC-compliant but non-identical pinout) | Higher bandwidth requirement; requires PCB redesign due to CA/DQ pin reordering and VREF placement differences | Select when >34 GB/s bandwidth is needed and board layout allows pinout adaptation |
| K4E6E304EC-EGCG | 2 Gb density, 4266 Mbps, same WFBGA-200 package but Samsung-specific MR register mapping and training flow | Same footprint but incompatible MPC command set and CA training sequence timing | Choose for Samsung SoC reference designs where vendor-specific training firmware is already integrated |
Compared with MT53E256M32D2DS-046 and K4E6E304EC-EGCG, W66BP6NBUAGJ offers identical density and speed but distinct JEDEC-aligned MR register definitions and Winbond-specific MPC command structure - making it optimal for new designs prioritizing cross-vendor interoperability and simplified CA/DQ training integration.
Availability
W66BP6NBUAGJ is available at Aetrix Electronics and suitable for smartphone, tablet, automotive infotainment, and mobile gateway applications requiring stable component supply, long-term lifecycle support, and JEDEC LPDDR4 compliance.
Supply support for W66BP6NBUAGJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR Flash, RAM, and trusted computing ICs since 1987.
W66BP6NBUAGJ belongs to Winbond's LPDDR4 product line engineered for mobile and edge computing platforms demanding low-voltage operation, high bandwidth efficiency, and robust signal integrity under thermally constrained conditions.
FAQ
What is the maximum data rate supported by W66BP6NBUAGJ?
W66BP6NBUAGJ supports a maximum data rate of 4266 Mbps, corresponding to a 2133 MHz differential clock frequency. This performance level meets JEDEC LPDDR4 specification JESD209-4B requirements and is validated across the full commercial temperature range (–25°C to +85°C). The W66BP6NBUAGJ achieves this using calibrated output drivers, on-die termination, and hardware-assisted training sequences to maintain signal integrity at high speeds.
Does W66BP6NBUAGJ support partial array self-refresh (PASR)?
Yes, W66BP6NBUAGJ supports PASR through MR13 configuration, allowing refresh of 1/2/4/8 banks only. This feature reduces self-refresh current significantly - down to 25 µA per active bank - making W66BP6NBUAGJ suitable for battery-powered devices requiring extended standby time. PASR mode is activated via mode register write and does not require external control signals.
What package type and dimensions does W66BP6NBUAGJ use?
W66BP6NBUAGJ uses a 200-ball WFBGA package measuring 8 mm × 11.5 mm × 0.65 mm with 0.5 mm ball pitch. This fine-pitch package is optimized for high-density mobile PCBs and complies with IPC-7351B footprint standards. The W66BP6NBUAGJ ball map follows JEDEC LPDDR4 layout conventions, including dedicated VSS/VDD pairs and differential clock/strobe routing zones.
How is command/address bus training performed on W66BP6NBUAGJ?
W66BP6NBUAGJ supports CA bus training via Multi-Purpose Command (MPC) sequences defined in the datasheet, specifically using MPC code 0x03. This training adjusts CA input timing relative to CK using internal delay elements and validates setup/hold margins. The W66BP6NBUAGJ implements automatic CA VREF calibration and reports training status through MR39, enabling robust initialization in high-speed mobile SoC interfaces.
Is W66BP6NBUAGJ compatible with JEDEC LPDDR4 standard JESD209-4B?
Yes, W66BP6NBUAGJ fully complies with JEDEC LPDDR4 standard JESD209-4B, including timing parameters (tRCD, tRP, tRAS), command encoding, mode register definitions (MR0–MR40), and electrical specifications (HS_LLVCMOS I/O, differential clock interface). All AC/DC characteristics, training procedures, and power modes in the W66BP6NBUAGJ datasheet align with JESD209-4B revision A.
W66BP6NBUAGJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 1.866 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BP6NBUAGJ FAQ
1.How can I place an order for W66BP6NBUAGJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BP6NBUAGJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BP6NBUAGJ reliable?
The price and inventory of W66BP6NBUAGJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BP6NBUAGJ is usually 5 days.
3.What payment methods are accepted for W66BP6NBUAGJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BP6NBUAGJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BP6NBUAGJ?
W66BP6NBUAGJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BP6NBUAGJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BP6NBUAGJ?
For technical support, including W66BP6NBUAGJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BP6NBUAGJ requirements.
6.How does Aetrix verify that W66BP6NBUAGJ is sourced from the original manufacturer or authorized distributors?
All W66BP6NBUAGJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BP6NBUAGJ meets industry standards.
7.What is the process for return or replacement of W66BP6NBUAGJ?
All W66BP6NBUAGJ units undergo pre-shipment inspection (PSI). If there is an issue with W66BP6NBUAGJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BP6NBUAGJ part is unused and in its original packaging.
Return procedure for W66BP6NBUAGJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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