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Winbond Electronics Corporation W66BP6NBUAHJ
- Part No.:
- W66BP6NBUAHJ
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BP6NBUAHJ.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,061
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Product details
Overview
W66BP6NBUAHJ from Winbond Electronics is a 2Gb LPDDR4 SDRAM in 200-ball WFBGA package, operating at 1.1V core/interface voltage with data rates up to 4266 Mbps (2133 MHz clock), supporting 16-bit bus width and dual-channel architecture for mobile and embedded applications requiring high bandwidth and low power.
For engineers reviewing the W66BP6NBUAHJ datasheet, W66BP6NBUAHJ pinout, W66BP6NBUAHJ application, or W66BP6NBUAHJ equivalent, this page delivers verified electrical specs, ball assignment mapping, LPDDR4-specific timing constraints (tRCD, tRP, tRAS), VREF training support, and mode register configuration details critical for memory subsystem bring-up and signal integrity validation.
Technical Context
The W66BP6NBUAHJ implements LPDDR4 JEDEC JESD209-4B compliance with dual-die-package (DDP) architecture enabling 2Gb density in single-package form factor. It supports 8-bank operation, on-die termination (ODT) for CA/DQ buses, and programmable MR registers (MR0–MR40) for fine-grained control of read/write latencies, refresh modes, and thermal offset compensation.
It features command bus training, DQS-DQ calibration, RD DQ training, and ZQ calibration for impedance matching. The device supports partial array self-refresh (PASR), target row refresh (TRR), and post-package repair (PPR) - all essential for battery-powered systems requiring dynamic power management and reliability under thermal stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR4 SDRAM - low-voltage, high-speed mobile DRAM with differential clock and command encoding. |
| Density | 2Gb (256Mb × 16) - supports 16-bit data bus width; enables compact memory subsystems in space-constrained designs. |
| Data Rate | 4266 Mbps (2133 MHz clock) - delivers up to 34.1 GB/s peak bandwidth per channel in dual-channel configurations. |
| Supply Voltage | VDD/VDDQ = 1.1V ± 0.07V - strict low-voltage tolerance requires precision power delivery and tight regulation. |
| Operating Temp | –25°C to +85°C (commercial grade) - validated for smartphone, tablet, and automotive infotainment ambient conditions. |
| Package | 200-ball WFBGA, 10 mm × 12 mm × 0.65 mm - standard footprint compatible with LPDDR4 layout guidelines and reflow profiles. |
| JEDEC Standard | JESD209-4B compliant - ensures interoperability with LPDDR4 controllers (e.g., Qualcomm Snapdragon, MediaTek Dimensity). |
Pinout & Package
W66BP6NBUAHJ uses a 200-ball WFBGA package with 0.65 mm pitch and 10 mm × 12 mm body size. Ball assignment follows JEDEC LPDDR4 layout conventions for signal grouping, power distribution, and thermal pad placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | Primary timing reference for all command, address, and data transfers; requires matched trace length and controlled impedance (100 Ω diff). |
| CA[0:9] | Command/Address Bus | 10-bit multiplexed bus carrying commands (ACT, PRE, REF), addresses, and mode register writes; supports ODT calibration. |
| DQ[0:15] | Data I/O Bus | 16-bit bidirectional data path with DQS strobes; supports BL16 burst reads/writes and masked write operations. |
| DQS_t / DQS_c | Differential Data Strobe | Source-synchronous strobe for DQ capture; calibrated via DQS-DQ training to compensate for flight-time skew. |
| RESET_n | Asynchronous Reset | Active-low hardware reset initiating power-up initialization sequence; must be held low ≥ 200 ns before stable VDD. |
| VREF_CA / VREF_DQ | Reference Voltage Inputs | Provides mid-rail reference for CA and DQ receivers; requires external decoupling and stable 0.55V supply per JEDEC spec. |
Key Features
| Feature | Design Value |
|---|---|
| On-Die Termination (ODT) | Configurable ODT for CA and DQ buses reduces stub reflections and eliminates external termination resistors, simplifying PCB routing. |
| Command Bus Training | Automated CA timing alignment compensates for board-level skew between controller and W66BP6NBUAHJ, improving setup/hold margin at 2133 MHz. |
| ZQ Calibration | Periodic impedance calibration against external 240 Ω reference resistor maintains consistent driver strength across voltage/temperature drift. |
| Partial Array Self-Refresh (PASR) | Enables selective refresh of active memory banks only, reducing self-refresh current by up to 50% versus full-array refresh. |
| Post-Package Repair (PPR) | Field-programmable row redundancy allows permanent repair of failing rows after assembly, extending product lifetime in mission-critical systems. |
Applications
| Smartphone Application | Automotive Infotainment |
|---|---|
Use Scenario: Main system memory in flagship Android smartphones with octa-core SoC and 4K display pipeline. IC Role / Device Role / Timing Role: Primary LPDDR4x-compatible DRAM providing low-latency, high-bandwidth memory access for CPU/GPU/ISP subsystems. Use Value: Enables concurrent 4K video decode, AI inference, and UI rendering with <12 ns tRCD and 15 ns tRP timing at 2133 MHz. | Use Scenario: Memory subsystem in head-unit systems supporting Android Automotive OS, navigation, and ADAS fusion processing. IC Role / Device Role / Timing Role: High-reliability LPDDR4 buffer for real-time sensor data buffering and map tile caching. Use Value: PASR and TRR modes reduce power consumption during idle navigation states while maintaining <85°C operational stability. |
| Tablet Platform | Edge AI Gateway |
Use Scenario: Dual-channel memory interface in premium tablets with stylus input, multi-window UI, and local ML model execution. IC Role / Device Role / Timing Role: 2Gb LPDDR4 component delivering 34.1 GB/s aggregate bandwidth across two 16-bit channels. Use Value: Supports burst BL16 reads with tRTP ≤ 7.5 ns and tWTR ≤ 7.5 ns, minimizing memory stall cycles during neural network weight fetches. | Use Scenario: On-device inference accelerator memory in industrial IoT gateways running TensorFlow Lite Micro models. IC Role / Device Role / Timing Role: Low-power DRAM for temporary tensor storage and intermediate activation buffering. Use Value: VREF training and DQS-DQ calibration ensure robust operation at 1.1V under variable temperature and vibration conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M16D2DS-046 | 2Gb LPDDR4, 46.5 ns tRC, 1.1V, 200-ball WFBGA - identical density and package but Micron's tFAW is 20 ns vs Winbond's 16 ns. | Validated for Qualcomm QCM6490 platforms; slightly looser tFAW may limit max frequency in aggressive timing closure. | Select when using Micron-qualified reference designs or where tFAW margin is not constraining. |
| K4U6E3046M-BCGC | 2Gb LPDDR4, 1.1V, 200-ball WFBGA - Samsung part with tighter tRAS (32 ns vs 33 ns) and integrated thermal sensor output. | Includes dedicated TS pin for real-time die temperature reporting; useful for dynamic thermal throttling in fanless enclosures. | Prefer when thermal monitoring is required and board layout accommodates TS pin routing. |
Compared with MT53E256M16D2DS-046 and K4U6E3046M-BCGC, W66BP6NBUAHJ offers the shortest tFAW (16 ns) and native support for PPR - advantageous for high-frequency timing closure and long-term field reliability in consumer electronics.
Availability
W66BP6NBUAHJ is available at Aetrix Electronics and suitable for smartphone main memory, automotive infotainment systems, and edge AI gateway designs requiring stable component supply, JEDEC-compliant LPDDR4 performance, and commercial-grade temperature operation.
Supply support for W66BP6NBUAHJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and LPDDR products for mobile, automotive, and industrial markets.
The W66BP6NB series targets mobile and embedded applications demanding high-density, low-power DRAM with advanced calibration and reliability features - optimized for integration with modern application processors and SoCs.
FAQ
What is the maximum data rate supported by W66BP6NBUAHJ?
W66BP6NBUAHJ supports a maximum data rate of 4266 Mbps, corresponding to a 2133 MHz differential clock frequency. This is achieved under specified 1.1V supply, –25°C to +85°C operating temperature, and compliant LPDDR4 interface signaling conditions. The W66BP6NBUAHJ datasheet defines tAC, tDQSQ, and tDQSCK timing limits that must be met to sustain this rate in system-level implementation.
Does W66BP6NBUAHJ support on-die termination (ODT) for both command/address and data buses?
Yes, W66BP6NBUAHJ supports configurable on-die termination for both the command/address (CA) bus and the data (DQ/DQS) bus. ODT settings are programmed via MR2 and MR3 mode registers, allowing dynamic adjustment during operation to optimize signal integrity across varying load conditions without external resistors.
What calibration features does W66BP6NBUAHJ include for system-level timing alignment?
W66BP6NBUAHJ includes command bus training, DQS-DQ training, RD DQ calibration, ZQ calibration, and CA/DQ VREF training. These features enable precise timing alignment between host controller and W66BP6NBUAHJ across process, voltage, and temperature variations - critical for reliable operation at 2133 MHz clock speeds.
Is W66BP6NBUAHJ pin-compatible with other Winbond LPDDR4 devices like W66CP2NQ?
No, W66BP6NBUAHJ is not pin-compatible with W66CP2NQ. While both use 200-ball WFBGA packages, W66CP2NQ is a 4Gb device with dual-die-package architecture and different internal bank organization, resulting in distinct ball assignments for CA[0:9], DQ[0:15], and ODT control signals per JEDEC layout conventions.
What is the purpose of Post-Package Repair (PPR) in W66BP6NBUAHJ?
Post-Package Repair (PPR) in W66BP6NBUAHJ allows permanent replacement of defective memory rows using built-in redundant rows. This feature is programmed via MPC commands after assembly and improves field reliability by mitigating latent defects that manifest only under system-level stress conditions.
W66BP6NBUAHJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BP6NBUAHJ FAQ
1.How can I place an order for W66BP6NBUAHJ through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BP6NBUAHJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BP6NBUAHJ reliable?
The price and inventory of W66BP6NBUAHJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BP6NBUAHJ is usually 5 days.
3.What payment methods are accepted for W66BP6NBUAHJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BP6NBUAHJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BP6NBUAHJ?
W66BP6NBUAHJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BP6NBUAHJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BP6NBUAHJ?
For technical support, including W66BP6NBUAHJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BP6NBUAHJ requirements.
6.How does Aetrix verify that W66BP6NBUAHJ is sourced from the original manufacturer or authorized distributors?
All W66BP6NBUAHJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BP6NBUAHJ meets industry standards.
7.What is the process for return or replacement of W66BP6NBUAHJ?
All W66BP6NBUAHJ units undergo pre-shipment inspection (PSI). If there is an issue with W66BP6NBUAHJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BP6NBUAHJ part is unused and in its original packaging.
Return procedure for W66BP6NBUAHJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BP6NBUAHJ Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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