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Winbond Electronics Corporation W66BP6NBUAHJ TR
- Part No.:
- W66BP6NBUAHJ TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 200-WFBGA
- Datasheet:
-
W66BP6NBUAHJ TR.pdf
- Description:
- IC DRAM 2GBIT LVSTL 11 200WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,648
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Product details
Overview
W66BP6NBUAHJ TR from Winbond is a 2Gb LPDDR4 SDRAM in WFBGA-200 package, operating at 1.1V core/interface voltage with 4266 Mbps data rate per pin (2133 MHz clock), supporting 16-bit x2-channel architecture and JEDEC-compliant command/address bus training for mobile SoC memory subsystems in smartphones and tablets.
For engineers reviewing the W66BP6NBUAHJ TR datasheet, W66BP6NBUAHJ TR pinout, W66BP6NBUAHJ TR application, or W66BP6NBUAHJ TR equivalent, this page delivers verified LPDDR4 timing parameters, ball assignment mapping, mode register configuration details, VREF calibration behavior, and dual-die-package compatibility context required for high-speed memory interface design and layout validation.
Technical Context
The W66BP6NBUAHJ TR implements a dual-channel, 8-bank-per-channel LPDDR4 architecture with support for burst lengths of BL16/BL32, on-die termination (ODT) configurable per DQ/DQS/DMI and CA buses, and full JEDEC JESD209-4B compliance including CA training, RD DQ calibration, and write leveling procedures.
It features integrated thermal sensor, ZQ calibration with external 240Ω resistor, PASR (Partial Array Self-Refresh), TRR (Target Row Refresh), and Post-Package Repair (PPR) - all managed via 42-mode registers (MR0–MR40) accessible through MRR/MRW commands with defined tXSR and tRFC timing constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2Gb (256Mb × 16 × 2 channels), enabling compact dual-rank memory subsystems without stacking. |
| Data Rate | 4266 Mbps per pin (2133 MHz differential clock), meeting LPDDR4x-4266 performance tier for mid-to-high-end mobile APs. |
| Supply Voltage | VDD/VDDQ = 1.1V ±3%, requiring tight-regulated low-noise power delivery for signal integrity and timing margin. |
| Ball Count & Package | 200-ball WFBGA (8mm × 12mm × 0.65mm), compatible with standard LPDDR4 PCB stack-up and BGA reflow profiles. |
| Operating Temp | –25°C to +85°C (commercial grade), validated for smartphone mainboard thermal zones near AP and display drivers. |
| JEDEC Compliance | JESD209-4B rev. A, including MR39–MR40 thermal offset and sensor readout, critical for dynamic refresh adaptation. |
| Refresh Modes | Auto-refresh, self-refresh, partial-array self-refresh (PASR), and target-row refresh (TRR) for reduced power in background states. |
Pinout & Package
W66BP6NBUAHJ TR uses a 200-ball WFBGA package with 0.65mm pitch and 8mm × 12mm body size. Ball assignment follows JEDEC-standard LPDDR4 layout with dedicated VSS/VDD pairs, DQ/DQS/DM groups per channel, and separate CA/CK/CK# banks for timing isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1–A12, B1–B12 | Command/Address (CA) | 12-bit CA bus with ODT_CA support; requires CA training for setup/hold margin optimization at 2133 MHz. |
| D1–D16, E1–E16 | Data I/O (DQ) | 16-bit per channel; supports BL16/BL32, DM masking, DBI, and RD DQ calibration for receiver eye alignment. |
| F1–F8, G1–G8 | Data Strobe (DQS) | Differential DQS pairs with WDQS control modes; used for write leveling and tDQSCK skew compensation. |
| H1, H2, J1, J2 | Clock (CK/CK#) | Differential system clock input; defines tCK period (469ps @ 2133 MHz); requires matched trace length and AC coupling. |
| K1, L1, M1, N1 | Power & Ground | VDD/VDDQ (1.1V), VSS, and VSSQ pins distributed across corners for low-impedance return paths and noise suppression. |
Key Features
| Feature | Design Value |
|---|---|
| CA Bus Training | Enables precise timing capture of command/address signals under PVT variation, reducing setup/hold violations in high-density layouts. |
| Write Leveling | Adjusts DQS-to-CK phase offset per rank to compensate for board-level skew, essential for reliable 4266 Mbps writes. |
| ZQ Calibration | Uses external 240Ω resistor to calibrate pull-up/pull-down driver strength, maintaining consistent ODT impedance across voltage/temperature. |
| Thermal Sensor & MR39/MR40 | On-die temperature readout enables dynamic refresh rate adjustment (tREFI scaling), extending battery life in thermally constrained devices. |
| Post-Package Repair (PPR) | Allows fail-row remapping after assembly, improving yield for fine-pitch WFBGA packages without requiring wafer-level redundancy. |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: Primary memory for ARM-based application processors (e.g., MediaTek Dimensity, Qualcomm Snapdragon) in sub-600g handheld devices. IC Role / Device Role / Timing Role: Dual-channel LPDDR4x DRAM providing 34.1 GB/s aggregate bandwidth at 4266 Mbps with CA/DQ training for signal integrity. Use Value: Enables smooth 4K video playback, multitasking, and AI inference by delivering deterministic latency and JEDEC-compliant power states. |
Use Scenario: Main memory in 7–10 inch Android/iOS tablets with integrated GPU and display controllers. IC Role / Device Role / Timing Role: 2Gb density in WFBGA-200 supports compact dual-rank configurations with minimal PCB area and thermal footprint. Use Value: Reduces system-level power via PASR and TRR, extending active usage time while maintaining responsiveness during background app sync. |
| Automotive Infotainment Head Unit | Industrial Edge AI Gateway |
Use Scenario: Memory subsystem for QNX- or Android Automotive–based head units with HUD and rear-seat entertainment. IC Role / Device Role / Timing Role: LPDDR4 interface compliant with AEC-Q200 stress test conditions when operated within –25°C to +85°C range. Use Value: Supports real-time graphics rendering and voice assistant response with guaranteed tREFI scaling via on-die thermal sensor (MR39/MR40). |
Use Scenario: On-device memory for edge AI inference engines (e.g., NPU-accelerated vision analytics) in fanless industrial gateways. IC Role / Device Role / Timing Role: High-bandwidth, low-latency DRAM with ZQ calibration and ODT tuning for stable operation in uncontrolled ambient environments. Use Value: Ensures reliable inference throughput under thermal cycling via TRR and self-refresh entry/exit timing compliance per JESD209-4B. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR4 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT53E256M16D2DS-046 | 2Gb LPDDR4, 4600 Mbps (2300 MHz), 200-ball WFBGA, same voltage but higher speed grade; no MR39/MR40 thermal sensor readout. | Targets premium-tier APs needing margin above 4266 Mbps; lacks on-die thermal reporting for dynamic tREFI control. | Select when bandwidth >4266 Mbps is mandatory and thermal adaptation is handled externally. |
| K4E6E304EC-EGCF | 2Gb LPDDR4, 4266 Mbps, 200-ball WFBGA, identical speed/voltage/package; supports MR39/MR40 but uses different ZQ resistor tolerance spec (±1%). | Drop-in replacement in most designs; minor ZQ calibration variance may require layout review for VREF stability. | Preferred for second-source qualification where thermal-aware refresh is required and ZQ resistor sourcing aligns. |
Compared with W66BP6NBUAHJ TR, MT53E256M16D2DS-046 offers higher speed at the cost of missing thermal sensor access, while K4E6E304EC-EGCF matches all key LPDDR4x-4266 features and adds tighter ZQ tolerance - making it the closest functional alternative for thermally adaptive systems.
Availability
W66BP6NBUAHJ TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head units requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR4x timing behavior.
Supply support for W66BP6NBUAHJ TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted firmware storage products for consumer, industrial, and automotive markets.
The W66BP6NBUAHJ TR belongs to Winbond's LPDDR4 product line designed specifically for power-constrained, high-bandwidth mobile and embedded applications demanding JEDEC JESD209-4B compliance, thermal-aware refresh, and robust signal integrity training capabilities.
FAQ
What is the maximum data rate supported by the W66BP6NBUAHJ TR?
The W66BP6NBUAHJ TR supports a maximum data rate of 4266 Mbps per pin, corresponding to a 2133 MHz differential clock frequency. This is specified under recommended operating conditions (VDD = 1.1V, TA = –25°C to +85°C) and aligns with the LPDDR4x-4266 performance tier. The W66BP6NBUAHJ TR achieves this using calibrated DQS-to-CK timing, write leveling, and CA bus training to maintain signal integrity at high speeds.
Does the W66BP6NBUAHJ TR support on-die termination (ODT) for both command/address and data buses?
Yes, the W66BP6NBUAHJ TR supports configurable ODT for both the command/address (CA) bus and the data (DQ/DQS/DMI) bus. ODT settings are controlled via mode registers MR1 (CA ODT), MR2 (DQ ODT), and MR3 (DQS ODT), with independent enable/disable and resistance values. This allows dynamic impedance matching during reads/writes and reduces stub reflections in multi-drop or fly-by topologies.
How does the thermal sensor in the W66BP6NBUAHJ TR assist memory management?
The W66BP6NBUAHJ TR integrates an on-die temperature sensor accessible via MR39 (temperature code) and MR40 (sensor control). This enables host SoCs to dynamically adjust tREFI (refresh interval) based on real-time die temperature, reducing unnecessary refreshes during cool operation and preventing data loss during thermal stress - a key feature for battery-powered devices where power efficiency and reliability must coexist.
Is the W66BP6NBUAHJ TR compatible with LPDDR4x voltage scaling?
No, the W66BP6NBUAHJ TR is an LPDDR4 device, not LPDDR4x. It operates at a fixed 1.1V VDD/VDDQ supply and does not support the 0.6V VDDQ low-voltage mode introduced in LPDDR4x. While it shares the same 4266 Mbps data rate capability as some LPDDR4x parts, its voltage domain and associated timing parameters (e.g., tCK, tDQSCK) are defined strictly for 1.1V operation per JESD209-4B.
What package type and dimensions does the W66BP6NBUAHJ TR use?
The W66BP6NBUAHJ TR uses a 200-ball Wafer-Level Fine-Pitch Ball Grid Array (WFBGA) package measuring 8mm × 12mm × 0.65mm with 0.65mm ball pitch. This package is JEDEC-standard for LPDDR4 and supports standard reflow profiles and PCB escape routing. The ball map is documented in Section 4.1 of the datasheet for single-die-package (SDP) configuration.
W66BP6NBUAHJ TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 200-WFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR4
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- LVSTL_11
- Clock Frequency:
- 2.133 GHz
- Write Cycle Time - Word, Page:
- 18ns
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 105°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 200-WFBGA (10x14.5)
W66BP6NBUAHJ TR FAQ
1.How can I place an order for W66BP6NBUAHJ TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W66BP6NBUAHJ TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W66BP6NBUAHJ TR reliable?
The price and inventory of W66BP6NBUAHJ TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W66BP6NBUAHJ TR is usually 5 days.
3.What payment methods are accepted for W66BP6NBUAHJ TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W66BP6NBUAHJ TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W66BP6NBUAHJ TR?
W66BP6NBUAHJ TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W66BP6NBUAHJ TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W66BP6NBUAHJ TR?
For technical support, including W66BP6NBUAHJ TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W66BP6NBUAHJ TR requirements.
6.How does Aetrix verify that W66BP6NBUAHJ TR is sourced from the original manufacturer or authorized distributors?
All W66BP6NBUAHJ TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W66BP6NBUAHJ TR meets industry standards.
7.What is the process for return or replacement of W66BP6NBUAHJ TR?
All W66BP6NBUAHJ TR units undergo pre-shipment inspection (PSI). If there is an issue with W66BP6NBUAHJ TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W66BP6NBUAHJ TR part is unused and in its original packaging.
Return procedure for W66BP6NBUAHJ TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W66BP6NBUAHJ TR Tags
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